Author: claimsbot

1. A multimedia content delivery method, the method comprising:
communicating with a user of a second telephone, associated with a first customer premise device capable of outputting images to a display unit which is part of said customer premise device or coupled to said customer premise device, via a first telephone; and
using an application on said first telephone to send a first invite signal to a server, while said first telephone is in communication with said second telephone, said first invite signal including a telephone number of the second telephone or a user identifier identifying a user of said second telephone, said first invite signal causing said server to send a second invite signal to said first customer premise device, while the communication between said first telephone and said second telephone is ongoing, to trigger presentation, by said first customer premise device, of a prompt on the display unit inviting said user of said second telephone to receive one or more images captured by said first telephone.
2. The method of claim 1, further comprising:
communicating at least one of said one or more images for delivery to the first customer premise device which is used to display said one or more images; and
wherein communicating with the user of the second telephone includes providing audio captured by said first telephone to said second telephone which is used to output audio from said first telephone while said first customer premise device outputs said at least one of said one or more images for display.
3. The method of claim 2, wherein said first customer premise device is a set top box, the method further comprising:
prior to communicating at least one of said one or more images, receiving an invitation response; and
wherein said step of communicating at least one of said one or more images from said first telephone for delivery to said set top box is performed when said invitation response indicates acceptance of said invitation.
4. The method of claim 3,
wherein receiving an invitation response includes receiving an IP address corresponding to said set top box; and
wherein communicating at least one of said one or more images includes transmitting a packet including at least some image data representing at least a portion of said one or more images, said packet including said IP address as a destination address.
5. The method of claim 4, wherein said IP address corresponding to said set top box is one of: i) an IP address of said set top box or ii) an IP address of a cable modem located at the customer premise of said user at which said second telephone is located and which is coupled to said set top box.
6. The method of claim 1, wherein said first customer premise device is a set top box, the method further comprising:
sending both audio and video, to be delivered to said set top box, from said first telephone after communication between the first telephone and the second telephone terminated.
7. A mobile communication device, comprising:
a wireless transmitter for transmitting signals;
a communication module for communicating with a user of a telephone associated with a set top box; and
an application for sending a first invite signal to a server while said mobile communication device is in communication with said telephone, said first invite signal including a telephone number of the telephone or a user identifier identifying a user of said telephone, said first invite signal causing said server to send a second invite signal to said set top box, while the communication between said mobile communication device and said telephone is ongoing, and to trigger presentation of a prompt on a display unit by said set top box inviting said user of said telephone to receive one more images captured by said mobile communication device.
8. The mobile communications device of claim 7, wherein said communications module is configured to send both audio and video content from said mobile communications device to be delivered to said set top box.
9. The mobile communications device of claim 7, further comprising:
a receiver module for receiving a response to said first invite signal; and
wherein said communications module communicates at least one of said one or more images from said mobile communications device for delivery to said set top box, when said response indicates acceptance of an invitation to receive said one or more images.
10. The mobile communications device of claim 9,
wherein said receiver module also receives an IP address corresponding to said set top box in response to said first invite signal; and
wherein said communications module controls said transmitter to transmit a packet including at least some image data representing at least a portion of said one or more images, said packet including said IP address as a destination address.
11. A method of operating a network headend including a first server to support delivery of images from telephones, the method comprising:
operating the first server to receive a first invite signal from a first telephone while said first telephone is in communication with a user of a second telephone associated with a set top box, said first invite signal including a telephone number of the second telephone or a user identifier identifying a user of said second telephone, said first invite signal causing said server to send a second invite signal to invite said user to receive via the set top box at least one image from said first telephone;
identifying, at the first server, said set top box associated with said second telephone and corresponding to said user, said identifying being in response to receiving said first invite signal; and
sending said second invite signal from the first server to said set top box while the communication between said first telephone and said second telephone is ongoing.
12. The method of claim 11, further comprising:
receiving a response to said second invite signal from said set top box corresponding to said user; and
communicating said response to the first telephone.
13. The method of claim 12, wherein identifying said set top box includes:
using at least one of said telephone number and said user identifier included in said first invite signal to identify said set top box.
14. The method of claim 12, wherein communicating the response to the first telephone includes:
communicating an IP address corresponding to the set top box to the first telephone.
15. The method of claim 11, further comprising:
operating a video on demand server to establish a video on demand session with the set top box; and
communicating at least some image content received from said first telephone to said set top box via said video on demand server.
16. The method of claim 15, wherein said video on demand server delivers image content obtained from said first telephone for display while audio is communicated from said first telephone to said second telephone.
17. A system which supports delivery of images from telephones, the systems comprising:
a first server, said first server including:
a module for receiving a first invite signal from a first telephone while said first telephone is in communication with a second telephone associated with a set top box, said first invite signal including a telephone number of the second telephone or a user identifier identifying a user of said second telephone, said first invite signal causing said server to send a second invite signal to invite said user to receive via the set to box at least one image from said first telephone;
a module for identifying said set top box associated with said second telephone and corresponding to said user in response to receiving said first invite signal; and
a communication module for sending said second invite signal to said set top box while the communication between said first telephone and said second telephone is ongoing.
18. The system of claim 17, wherein said first server further comprises:
a module for receiving a response to said second invite signal from said set top box corresponding to said user; and
wherein said communication module is configured to communicate said response to the first telephone.
19. The system of claim 17, further comprising:
a video on demand server to establish a video on demand session with the set top box; and
wherein said first server communicates at least some image content received from said first telephone to said set top box via said video on demand server.
20. The system of claim 19, wherein said video on demand server delivers image content obtained from said first telephone for display while audio is communicated from said first telephone to said second telephone.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A storage device comprising:
a first electrode;
a second electrode facing the first electrode;
an inter-electrode material layer provided between the first electrode and the second electrode; and
a voltage application unit applying a predetermined voltage to the first and the second electrodes; wherein
an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and
the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
2. The storage device according to claim 1, wherein
the oxidation-reduction active material exists inside or at a surface or in a vicinity of the surface, the surface being of the second electrode at a side to the inter-electrode material layer.
3. The storage device according to claim 1, wherein
the oxidation-reduction active material layer consists of at least one component selected from a group consisting of nickel (Ni), cobalt (Co), chromium (Cr), titanium (Ti), tantalum (Ta), iron (Fe), aluminum (Al), vanadium (Va), a reductant (HxWO3) of tungsten oxide (WO3), and an oxide of vanadium (V).
4. The storage device according to claim 1, wherein
the inter-electrode material layer has a property such that a resistance thereof decreases at a predetermined threshold voltage or above if a readout voltage is applied to the first and the second electrodes, and
the threshold voltage changes in response to the application of a writing or an erasing voltage to the first and the second electrodes.
5. The storage device according to claim 1, wherein
the inter-electrode material layer has, as a matrix material, an amorphous thin film containing at least one element selected from a group consisting of oxygen (O), sulfur (S), selenium (Se) and tellurium (Te) (chalcogenide material), and at least one element selected from a group consisting of germanium (Ge), silicon (Si), antimony (Sb) and indium (Ir).
6. The storage device according to claim 5, wherein
silver (Ag) or copper (Cu) containing an oxidation-reduction seed is added to the inter-electrode material layer.
7. The storage device according to claim 6, wherein
the oxidation-reduction seed is silver (Ag) or copper (Cu).
8. The storage device according to claim 5, wherein
the first electrode contains the oxidation-reduction seed, and
the second electrode contains the oxidation-reduction active material.
9. The storage device according to claim 1, wherein
no electrode reaction inhibition layer exists at an interface between the second electrode and the inter-electrode material layer before the application of the voltage to the first and the second electrodes, and
the electrode reaction inhibition layer is formed over an entire region of the interface between the second electrode and the inter-electrode material layer after the application of the voltage to the first and the second electrodes.
10. The storage device according to claim 1, wherein
the electrode reaction inhibition layer with an opening is formed at an interface between the second electrode and the inter-electrode material layer before the application of the voltage to the first and the second electrodes, and
the electrode reaction inhibition layer is formed over an entire region of the interface between the second electrode and the inter-electrode material layer after the application of the voltage to the first and the second electrodes.
11. The storage device according to claim 1, wherein
the inter-electrode material layer is formed with a semiconductor with one conductive type, and forms a Schottky diode in conjunction with the second electrode.
12. The storage device according to claim 1, further comprising:
an active element controlling electrical access to the storage element.
13. The storage device according to claim 1, wherein
the storage device is provided with data writing and readout functions.
14. The storage device according to claim 1, wherein
the storage device is provided with an erasure function of written-data in addition to data writing and readout functions.
15. The storage device according to claim 1, wherein
the electrode reaction inhibition layer is formed by an oxidation of a surface of the second electrode by applying a positive potential than that of the first electrode to the second electrode with the voltage application unit,
whereby performing a writing or an erasing of data by decreasing a magnitude of current flowing between the first electrode and the second electrode than that of a current flowing prior to the application of the voltage.
16. The storage device according to claim 13, wherein
the electrode reaction inhibition layer is erased by a reduction of the surface of the second electrode by applying a negative potential than that of the first electrode to the second electrode with the voltage application unit,
whereby performing an erasing or a writing of data by increasing the magnitude of current flowing between the first electrode and the second electrode than that of the current flowing prior to the application of the voltage.
17. The storage device according to claim 1, wherein
the inter-electrode material layer is caused to make a transition to a high resistance state at least before a next readout, and after a writing of data by making a transition of the inter-electrode material layer between the first and the second electrodes from the high resistance state to a low resistance state with the voltage application unit, or, after a readout of data by the application of a voltage equal to or above a threshold value to the first and the second electrodes.

1. A photovoltaic article comprising a first photovoltaic cell having a photoelectrically active region which is located between a topside electrode and a backside electrode, and an electrical connector in contact with the backside electrode on the backside of the cell and is connected to the backside electrode by use of an electrically conductive adhesive or solder, wherein an electrically conductive patch is located over at least a portion of and in electrical contact with both the backside electrode and the connector.
2. The photovoltaic article of claim 1 further comprising an additional photovoltaic cell adjacent to the first photovoltaic cell where the additional photovoltaic cell has a photoelectrically active region which is located between a topside electrode and a backside electrode, wherein the electrical connector in contact with the backside of the first photovoltaic cell is in contact with an electrically conducting element of the second photovoltaic cell.
3. The article of claim 2 wherein the electrical connector in contact with the backside of the first photovoltaic cell is in contact with the topside electrode of the second photovoltaic cell.
4. The photovoltaic article of claim 3 wherein there are one or more additional photovoltaic cells each adjacent to another photovoltaic cell, each cell having a photoelectrically active region which is located between a topside electrode and a backside electrode and connecting each adjacent cell is one or more electrical connector in contact with the topside electrode of one cell and the backside electrode of the adjacent cell to form a series of interconnected cells, where at least a portion of the backside electrode and the electrical connector in contact with it are covered by a conductive patch.
5. The photovoltaic article of claim 1, wherein the conductive patch comprises one or more of conductive tape, electrically conductive adhesive or low melting metal or solder material.
6. The photovoltaic article of claim 5, wherein the conductive patch comprises a metallic or intermetallic composition with a melting temperature lower than about 300\xb0 C.
7. The photovoltaic article of claim 5, wherein the conductive patch comprises an electrically conductive epoxy adhesive.
8. The photovoltaic article of claim 6 wherein the conductive patch comprises indium.
9. The photovoltaic article of claim 1, wherein the electrical connectors are attached to the topside electrode andor the backside electrode using electrically conductive adhesive.
10. The photovoltaic article of claim 1, wherein the electrical connector comprises a wire mesh.
11. A photovoltaic article according to claim 1, further comprising
a backside support, a frontside transparent barrier material, and electrical connections to enable transfer of electricity generated in the photovoltaic cell to other electrical devices.
12. The article of claim 11 further comprising an encapsulant material between the backside support and the backside electrode and an encapsulant material between the topside electrode and the frontside transparent barrier.
13. The article of claim 11 wherein the frontside transparent barrier is flexible.
14. The article of claim 11 wherein the frontside transparent barrier is glass.
15. The photovoltaic article of claim 11 further comprising a polymeric frame around at least a portion of the stack comprising the backside support, photovoltaic cell and electrical connectors and frontside transparent barrier material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising:
a semiconductor layer comprising an element region and an insulating region; and
a semiconductor element formed in the element region,
wherein the insulating region comprises an insulating film formed in the semiconductor layer to define a void.
2. The semiconductor device of claim 1, further comprising a cover film disposed on the void.
3. The semiconductor device of claim 1, further comprising an electrode pad connected to the semiconductor element and disposed on the insulating region.
4. The semiconductor device of claim 1, further comprising an additional void defined by the insulating film.
5. The semiconductor device of claim 2, wherein the cover film comprises another insulating film or a metal film.
6. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor layer;
forming a trench in the semiconductor layer;
forming an insulating film in the trench so as not to fill the trench completely so that a void is formed in the trench;
forming a cover film on the trench; and
forming an semiconductor element in the semiconductor layer outside the trench.
7. The method of claim 6, wherein the insulating film is formed by thermally oxidizing the semiconductor layer.
8. The method of claim 6, further comprising forming an electrode pad on the insulating film so as to be connected to the semiconductor element.
9. The method of claim 6, wherein the cover film comprises another insulating film formed by a deposition method.
10. The method of claim 6, wherein the cover film comprises a metal film formed by a physical deposition method.
11. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor layer;
forming a plurality of trenches in the semiconductor layer;
thermally oxidizing inside walls of the trenches so as to grow an insulating film so that voids are formed in the trenches;
forming a cover film on the trenches; and
forming an semiconductor element in the semiconductor layer outside the trenches,
wherein the oxidation of the inside walls of the trenches is performed so that portions of the semiconductor layer between the trenches are completely oxidized.
12. The method of claim 11, further comprising forming an electrode pad on the trenches so as to be connected to the semiconductor element.
13. The method of claim 11, wherein the cover film comprises another insulating film formed by a deposition method.
14. The method of claim 11, wherein the cover film comprises a metal film formed by a physical deposition method.
15. The method of claim 11, wherein the trenches are formed so that a distance between neighboring edges of a pair of neighboring trenches is shorter than a width of the trenches at an opening thereof.
16. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor element formed on the substrate;
an electrode pad formed on the substrate and connected to the semiconductor element; and
an insulating region formed in the substrate under the electrode pad and comprising an insulating portion and an void portion defined by the insulating portion.