1. A multilayered semiconductor device, comprising:
a first semiconductor package, comprising:
a first semiconductor element; and
a first wiring board having the first semiconductor element mounted on one surface thereof and having a plurality of connection pads for electric connection to an outside formed on another surface thereof;
a second semiconductor package, comprising:
a second semiconductor element;
a second wiring board having the second semiconductor element mounted on one surface thereof; and
a first encapsulating resin for encapsulating the second semiconductor element therein; and
a plate member disposed between the first semiconductor package and the second semiconductor package,
wherein:
the first semiconductor package, the plate member, and the second semiconductor package are stacked in this order;
the first wiring board and the second wiring board are electrically connected to each other via a metal wire through one of a notch and an opening formed in the plate member; and
the first semiconductor element, the second semiconductor package, and the metal wire are encapsulated in a second encapsulating resin.
2. The multilayered semiconductor device according to claim 1, wherein a linear expansion coefficient of the plate member is larger than linear expansion coefficients of the first encapsulating resin and the second encapsulating resin.
3. The multilayered semiconductor device according to claim 2, wherein an area of the plate member is smaller than an area of the first wiring board seen from a direction perpendicular to a surface of the first wiring board, and the notch is formed by a plate body disposed within a region of the first wiring board and a protruding piece which protrudes from the plate body to a location of a connection pad disposed in a corner of the first wiring board among the plurality of connection pads.
4. The multilayered semiconductor device according to claim 3, wherein an area of the second wiring board is smaller than the area of the first wiring board and the second wiring board is disposed within the region of the first wiring board seen from the direction perpendicular to the surface of the first wiring board, and an area of the plate body is equal to or smaller than the area of the second wiring board and the plate body is disposed within a region of the second wiring board seen from the direction perpendicular to the surface of the first wiring board.
5. The multilayered semiconductor device according to claim 3, wherein the protruding piece includes a tip portion and a coupling portion, the tip portion being formed so as to cover a contour of a corner pad seen from the direction perpendicular to the surface of the first wiring board, the coupling portion coupling the plate body and tip portion and having a width smaller than a width of the tip portion.
6. The multilayered semiconductor device according to claim 3, wherein the protruding piece is formed so as to be thicker than the plate body.
7. The multilayered semiconductor device according to claim 1, wherein one surface of the plate member is bonded to the first semiconductor element by a bonding member, and another surface of the plate member is bonded to the first encapsulating resin of the second semiconductor package.
8. A printed circuit board, comprising:
a printed wiring board; and
the multilayered semiconductor device according to claim 1 mounted on the printed wiring board.
9. A method of manufacturing a multilayered semiconductor device, the multilayered semiconductor device comprising:
a first semiconductor package, the first semiconductor package comprising:
a first semiconductor element; and
a first wiring board having the first semiconductor element mounted on one surface thereof and having a plurality of connection pads formed on another surface thereof, the plurality of connection pads being formed of a conductor electrically connected to a printed wiring board; and
a second semiconductor package, the second semiconductor package comprising:
a second semiconductor element;
a second wiring board having the second semiconductor element mounted on one surface thereof; and
a first encapsulating resin for encapsulating the second semiconductor element therein,
the method comprising:
a step of arranging a plurality of first semiconductor packages;
a step of disposing a plurality of plate members on the plurality of first semiconductor packages, each plate member having a linear expansion coefficient that is larger than a linear expansion coefficient of the first encapsulating resin and having one of a notch and an opening formed therein;
a first fixing step of fixing the plurality of plate members to the plurality of first semiconductor packages, respectively;
a step of supplying a plurality of second semiconductor packages onto the plurality of plate members;
a second fixing step of fixing the plurality of second semiconductor packages to the plurality of plate members, respectively;
a step of electrically connecting each of a plurality of first wiring boards and each of a plurality of second wiring boards via the notch or the opening by using metal wires;
a step of collectively encapsulating a plurality of first semiconductor elements, the metal wires, and the plurality of second semiconductor packages in a second encapsulating resin, the second encapsulating resin having a linear expansion coefficient smaller than the linear expansion coefficient of the plurality of plate members; and
a step of dividing a plurality of multilayered semiconductor devices by cutting the second encapsulating resin.
10. The method of manufacturing a multilayered semiconductor device according to claim 9, wherein:
an area of each plate member is smaller than an area of the first wiring board seen from a direction perpendicular to a surface of the first wiring board;
each notch is formed by a plate body disposed within a region of the first wiring board and a protruding piece that protrudes from the plate body to a location of a connection pad disposed in a corner of the first wiring board among the plurality of connection pads;
the first fixing step includes fixing the plurality of first semiconductor packages to the plurality of plate bodies of the plurality of plate members, respectively; and
the second fixing step includes fixing the plurality of second semiconductor packages to the plurality of plate bodies of the plurality of plate members, respectively.
11. The method of manufacturing a multilayered semiconductor device according to claim 9, wherein, for each plane member, one surface of the plate member is bonded to the first semiconductor element by a bonding member, and another surface of the plate member is bonded to the first encapsulating resin of the second semiconductor package.
12. The method of manufacturing a multilayered semiconductor device according to claim 9, wherein:
the first fixing step includes supplying a sheet-like plate material in which the plurality of plate members are coupled onto the plurality of first semiconductor packages that have undergone a test; and
the step of dividing includes cutting the sheet-like plate material together with the second encapsulating resin.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for producing a \u03c9-alkyl halide nitrile or \u03c9-halogen carboxylic acid, comprising:
a) reacting a malonic acid diester or cyanoacetic acid ester with a \u03b1,\u03c9-dihalogen alkane, wherein:
i) the two halogen atoms in said \u03b1,\u03c9-dihalogen alkane are separated by a chain of at least 3 carbon atoms;
ii) the reaction is carried out in the presence of one or more alkali carbonates or alkaline earth carbonates and a phase transfer catalyst with the constant removal of water formed during the reaction; and
iii) said one or more alkali carbonates or alkaline earth carbonates are, when added together, present in a molar ratio to the malonic acid diesters or cyanoacetic acid esters of greater than 0.6:1; and
b) saponifying and decarboxylating reaction products produced in step a).
2. The process of claim 1, wherein the saponification and decarboxylation are performed by adding a catalyst acid without the addition of a solvent.
3. The process of claim 1, wherein the reaction between said malonic acid diester or cyanoacetic acid ester and said \u03b1,\u03c9-dihalogen alkane takes place in a polar aprotic solvent and wherein said one or more alkali carbonates or alkaline earth carbonates are present in a molar ratio to the malonic acid diesters or cyanoacetic acid esters of greater than 1:1.
4. The process of claim 3, wherein said polar aprotic solvent is selected from the group consisting of: DMF, DMSO, dimethylacetamide or N-methylpyrrolidone.
5. The process of any one of claims 1\u20134, wherein said the malonic acid diesters or cyanoacetic acid esters, said \u03b1,\u03c9-dihalogen alkane, and said one or more alkali carbonates or alkaline earth carbonates are added in a ratio of 1:2.0\u20135.0:1.0\u20132.0.
6. The process of any one of claims 1\u20134, wherein a cyclic hydrocarbon or an aromatic hydrocarbon is used as an entrainer to remove reaction water.
7. The process of any one of claims 1\u20134, wherein a quaternary ammonium salt is used as said phase transfer catalyst.