1460742155-d9606fe4-d427-4ae4-a419-5899c289cc4b

1. A buffer circuit of a semiconductor apparatus, comprising:
a sensing circuit configured to sense input signals according to a data strobe signal, generate latch control signals, provide the latch control signals at nodes, and remove parasitic components of the nodes in response to a clock signal; and
a latch circuit configured to generate and latch output data in response to the latch control signals.
2. The buffer circuit according to claim 1, wherein the sensing circuit is configured to remove the parasitic components of the nodes in response to the clock signal, during an activation mode of the semiconductor apparatus.
3. The buffer circuit according to claim 1, wherein the sensing circuit comprises:
a sensing unit configured to sense a voltage level difference of differential input signals and generate the latch control signals, during an activation period of the data strobe signal;
an activation unit configured to activate a current path of the sensing unit in response to the data strobe signal; and
a compensation unit configured to serve as a negative impedance component in response to the clock signal and remove the parasitic components of the nodes.
4. The buffer circuit according to claim 3, wherein the compensation unit comprises:
a capacitor configured to be applied with the clock signal as a body bias.
5. A buffer circuit of a semiconductor apparatus, comprising:
a sensing unit configured to electrically couple with a power supply terminal, sense a voltage level difference of differential input signals during an activation period of a data strobe signal, generate latch control signals, and provide the latch control signals at nodes;
an activation unit configured to electrically couple with a ground terminal, and activate a current path of the sensing unit in response to the data strobe signal;
an input unit configured to electrically couple with the activation unit, and receive the differential input signals; and
a compensation unit electrically coupled with the sensing unit and the input unit, and configured to remove parasitic components of the nodes in response to a clock signal.
6. The buffer circuit according to claim 5, wherein the compensation unit is configured to serve as a negative impedance component in response to the clock signal and remove the parasitic components of the nodes.
7. The buffer circuit according to claim 5, wherein the compensation unit is configured to operate as a capacitor for a predetermined time in response to the clock signal as a body bias.
8. A buffer circuit of a semiconductor apparatus, comprising:
a sensing unit configured to sense a voltage level difference of differential input signals during an activation period of a data strobe signal, generate and provide a first differential latch control signal at a first node, and generate and provide a second differential latch control signal at a second node;
an activation unit configured to activate a current path of the sensing unit in response to the data strobe signal; and
a capacitor electrically coupled with the first node and the second node, and configured to remove parasitic components of the first and second nodes in response to a clock signal.
9. The buffer circuit according to claim 8, wherein the capacitor comprises a transistor having a gate which is electrically coupled with the first node and a source and a drain which are electrically coupled with the second node, and applied with the clock signal as a body bias.
10. A buffer circuit of a semiconductor apparatus, comprising:
a sensing circuit configured to sense input signals, generate output signals, provide the output signals at nodes, and remove parasitic components of the nodes; and
a latch circuit configured to generate and latch output data in response to the output signals of the sensing circuit.
11. The buffer circuit according to claim 10, wherein the sensing circuit senses the input signals in response to a data strobe signal.
12. The buffer circuit according to claim 10, wherein the parasitic components of the nodes are removed in response to a clock signal.
13. The buffer circuit according to claim 10, wherein the output signals include latch control signals.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An airbag tat is deployed and inflated to protect an occupant in a front passenger seat of a vehicle, the airbag comprising a fabric forming the airbag, wherein the fabric has first and second sides extending along the sides of the vehicle and opposite to each other in a lateral direction of the vehicle, wherein the fabric has a single vent hole formed only in the first side and a single vent hole formed only in the second side for discharging some gas introduced into the airbag to the outside, and wherein each vent hole is located at a position where the vent hole is unlikely to be blocked by the occupant or members forming the vehicle when the airbag, when inflated, protects the occupant, and wherein the opening area of the single vent hole in the first side is greater than the opening area of the single vent hole in the second side.
2. The airbag according to claim 1, wherein, when the airbag is expanded, the first side is located closer to a center of the vehicle in the lateral direction of the vehicle than the second side.
3. The airbag according to claim 1, wherein a diameter of the vent hole in the first side is in a range between 60 mm and 90 mm, inclusive.
4. The airbag according to claim 1, wherein a diameter of the vent hole in the second side is less than 60 mm.
5. An airbag tat is deployed and inflated to protect an occupant in a front passenger scat of a vehicle, the airbag comprising a fabric forming the airbag, wherein the fabric has first and second sides extending along the sides of the vehicle and opposite to each other in a lateral direction of the vehicle, wherein the fabric has a plurality of vent holes formed only in the first and second sides for discharging some gas introduced into the airbag to the outside, at least two of the vent holes being formed in the first side and only one of the vent holes being formed in the second side, and wherein each vent hole is located at a position where, when the airbag is inflated, the vent hole is unlikely to be blocked by the occupant or members forming the vehicle, and wherein the total opening area of the at least two vent holes in the first side is greater than the opening area of the one vent hole in the second side.
6. The airbag according to claim 5, wherein, when the airbag is expanded, the first side is located closer to a center of the vehicle in the lateral direction of the vehicle than the second side.
7. An airbag that is deployed and inflated to protect an occupant in a front passenger seat of a vehicle, the air bag comprising:
a fabric forming the airbag, wherein the fabric has first and second sides extending along the sides of to vehicle and opposite to each other in a lateral direction of the vehicle, wherein the fabric has at least two vent holes, formed only in the first and second sides, for discharging some of gas introduced into the airbag to the outside, each vent hole being formed in different one of the first and second sides, wherein each vent hole is located at a position where the vent hole is unlikely to be blocked by the occupant or members forming the vehicle when the inflated airbag protects the occupant, and wherein the vent holes are designed such that the total amount of gas discharged from the vent hole in the first side is greater than the total amount of gas discharged from the vent hole in the second side.
8. The airbag according to claim 7, wherein, when the airbag is expanded, the first side is located closer to a center of the vehicle in the lateral direction of the vehicle than the second side.
9. An airbag that is deployed and inflated to protect an occupant in a front passenger seat of a vehicle, the airbag comprising a fabric forming the airbag, wherein the fabric has first and second side surfaces extending along the sides of the vehicle and facing in the opposite directions with respect to a lateral direction of the vehicle, wherein, when the airbag is expanded, the first side surface is located closer to a center of the vehicle in the lateral direction of the vehicle than the second side surface, wherein the fabric has at least one vent hole formed only in the first side surface and at least one vent hole formed only in the second side surface for discharging some of gas introduced into the airbag to the outside, and wherein each vent hole is located at a position where the vent hole is unlikely to be blocked by the occupant or members forming the vehicle when the airing, when inflated, protects the occupant, wherein the at least one vent hole in the first side surface and the at least one vent hole in the second side surface are oriented in opposite directions, and wherein the total opening area of the at least one vent hole in the first side surface is greater than the total opening area of the at least one vent hole in the second side surface.

1460742143-3bba1815-ff5e-46a3-a69d-2421f67a707a

1. A universal-joint shaft arrangement for prop shafts suitable for the transfer of torque having at least one spider, said shaft arrangement comprising:
at least one link yoke;
pins arranged around a center point and extending from a base body in pairs around a common axis, whereby the axes cross at the center point of the spider at a right angle;
each pin having a surface arranged concentrically around the respective pin axis and forming a contact surface or a surface for supporting rolling elements of a roller bearing;
a transition area between the surface forming a contact surface or supporting a contact surface and the base body;
a functional surface formed on sides of the base body facing the respective pin and attached to each pin for supporting at least one seal element by forming a sealing surface of a seal pairing;
the functional surface running perpendicular to a plane which is defined by the pin axis of the respective pin and the pin arranged next to it in the circumferential direction;
the functional surface extending from the transition area at least into an area in the radial direction around the pin axis having a radius which is at least 1.5 times the respective pin radius;
at least one centering surface arranged perpendicular to the respective functional surface for the immobilization of a seal holder carrying a sealing device and attached to each functional surface;
a bearing assembly of each pin comprising at least one radial bearing and one axial bearing mounted in the area of a respective pin root;
the bearing assembly sealed by means of the respective seal which is mounted in the seal holder;
the seal forming the seal pairing with the side of the base body associated with the respective pin;
the seal holder being attached to the spider.
2. The universal joint shaft in accordance with claim 1 wherein the functional surfaces on the spider are planar.
3. The universal joint shaft in accordance with claim 2 wherein the functional surface on the spider extends over the entire respective side formed by the base body.
4. The universal joint shaft in accordance with claim 2 wherein the functional surface on the spider is annular in the radial direction around the pin axis of the respective pin.
5. The universal joint shaft in accordance with claim 2 wherein the base body is shaped by a cube.
6. The universal joint shaft in accordance with claim 1 wherein the functional surfaces on the spider extend over the entire side formed by the base body.
7. The universal joint shaft in accordance with claim 6 wherein the functional surface on the spider is annular in the radial direction around the pin axis of the respective pin.
8. The universal joint shaft in accordance with claim 1 wherein the functional surfaces on the spider are annular in the radial direction around the pin axis of the respective pin.
9. The universal joint shaft in accordance with claim 1 wherein the base body is shaped like a cube.
10. The universal joint shaft in accordance with claim 9 wherein the centering surfaces attached to a functional surface are formed by the neighboring sides.
11. The universal joint shaft in accordance with claim 9 wherein the centering surfaces attached to a functional surface are arranged on the same side of the base body and the base body is provided with means for fastening the seal holder carrying the seal and which are at least partially arranged on the same side andor on the neighboring sides.
12. The universal joint shaft in accordance with claim 11 wherein the means are designed as threaded bore holes.
13. The universal joint shaft in accordance with claim 1 wherein the transition area is characterized by an increase in the diameter of the pin and a radius progression with a decreasing radius.
14. The universal joint shaft in accordance with claim 1 wherein the individual functional surface andor centering surface is ground.
15. The universal joint shaft in accordance with claim 1 characterized in that the individual functional surface andor centering surface is lathed.
16. The universal joint shaft in accordance with claim 1 wherein the surface forming a contact surface or indirectly supporting the contact surface is hardened.
17. The universal joint shaft in accordance with claim 16 wherein a hardness run-out extends into the transition area.
18. The universal joint shaft in accordance with claim 17 wherein the base body is shaped like a cube.
19. The universal joint shaft in accordance with claim 16 wherein carborizing hardening or inductive hardening are used as the hardening procedure.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An electrostatically-doped carbon nanotube device, comprising:
a carbon nanotube disposed on a substrate such that at least a portion of the carbon nanotube is free-standing, wherein said carbon nanotube has a first end and a second end;
a first metal contact disposed directly adjacent to the first end of the carbon nanotube;
a second metal contact disposed directly adjacent to the second end of the carbon nanotube, wherein said carbon nanotube is electrically coupled to the first and second metal contacts;
a first metal electrode disposed in the substrate adjacent to and at a distance from the first end of the carbon nanotube, wherein the first metal electrode is capacitively coupled to the first end of the carbon nanotube and is operable for receiving a first bias to electrostatically dope the first end of the carbon nanotube; and
a second metal electrode disposed in the substrate adjacent to and at a distance from the second end of the carbon nanotube, wherein the second metal electrode is capacitively coupled to the second end of the carbon nanotube and is operable for receiving a second bias to electrostatically dope the second end of the carbon nanotube.
2. The electrostatically-doped carbon nanotube device of claim 1, wherein said substrate comprises a trench.
3. The electrostatically-doped carbon nanotube device of claim 1, wherein the first metal electrode and the second metal electrode each comprises a metal selected from the group consisting of Mo, Ti, Pt, and Au.
4. The electrostatically-doped carbon nanotube device of claim 1, wherein the first bias is operable for making the first end of the carbon nanotube either a p-type semiconductor (hole majority carrier) or an n-type semiconductor (electron majority carrier).
5. The electrostatically-doped carbon nanotube device of claim 1, wherein the second bias is operable for making the second end of the carbon nanotube one of a p-type semiconductor (hole majority carrier) and an n-type semiconductor (electron majority carrier).
6. The electrostatically-doped carbon nanotube device of claim 1, wherein the carbon nanotube comprises a carbon nanotube selected from the group consisting of a single-walled carbon nanotube and a multi-walled carbon nanotube.
7. The electrostatically-doped carbon nanotube device of claim 1, wherein said substrate comprises a dielectric material.
8. The electrostatically-doped carbon nanotube device of claim 7, wherein the dielectric material comprises a dielectric material selected from the group consisting of SiO2, Si3N4, Al2O3, and ZrO2.
9. The electrostatically-doped carbon nanotube device of claim 1, further comprising a base material, said substrate being disposed on said base material.
10. The electrostatically-doped carbon nanotube device of claim 9, wherein said base material comprises a semiconductor material.
11. The electrostatically-doped carbon nanotube device of claim 9, wherein said base material comprises a metal material.
12. A photovoltaic device comprising the electrostatically-doped carbon nanotube device of claim 1.
13. A power device comprising the electrostatically-doped carbon nanotube device of claim 1.
14. A sensor comprising the electrostatically-doped carbon nanotube device of claim 1.