Author: claimsbot

1. A method for measuring a two-dimensional distribution of ionizing radiation doses with high spatial resolution comprising exposing a radiation sensitive film to a pattern of ionizing radiation that is to be measured to produce a measurement film and exposing one or more radiation sensitive films to known calibrated doses of said ionizing radiation to produce one or more scaling films, simultaneously scanning said measurement film and said scaling film(s) together with an unexposed radiation sensitive film in a multiplicity of measurement channels to produce a digital image, measuring those areas of the digital image corresponding to said unexposed film and said scaling film(s) in said measurement channels, converting said digital image to a map of dose values based on a previously determined mathematical relationship between measured scanner response values for the film in said measurement channels and radiation dose and subsequently adjusting all the dose values corresponding to said digital image using a mathematical function so that the dose values in the areas of said digital image representative of said unexposed film and said scaling films are equal to the calibrated dose values to which they were exposed, wherein all of the radiation sensitive films are the same type of film wherein at least one scaling film is exposed to a radiation dose greater than the highest dose in the measurement film.
2. The method of claim 1 wherein the previously determined mathematical relationship is established by exposing at least one radiation sensitive film to a plurality of known calibrated doses of the ionizing radiation to form a calibration film, scanning said exposed film together with an unexposed radiation sensitive film on an optical scanner having a multiplicity of color measurement channels to produce a calibration digital image, measuring, in a multiplicity of color channels, those areas of the calibration digital image corresponding to the exposed and unexposed film and associating the measured responses in said areas of the calibration digital image to said known ionizing radiation doses to establish the relationship between the measured response values and the ionizing radiation doses, wherein all of the radiation sensitive films are the same type of film.
3. The method of claim 1 wherein the radiation sensitive films are radiochromic films.
4. The method of claim 3 wherein the radiochromic film contains a diacetylene.
5. The method of claim 1 wherein the number of scaling films is one.
6. The method of claim 1 wherein the number of scaling films is two.
7. The method of claim 1 wherein the number of scaling films and calibrated scaling doses is one.
8. The method of claim 1 wherein the number of scaling films and calibrated scaling doses is two.
9. The method of claim 1 wherein the radiation sensitive film has a spatial resolution of at least 1 mm.
10. The method of claim 9 wherein the spatial resolution of the radiation sensitive film is at least 0.1 mm.
11. The method of claim 10 wherein the spatial resolution of the radiation sensitive film is at least 0.01 mm.
12. The method of claim 11 wherein the spatial resolution of the radiation sensitive film is at least 0.001 mm.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An on-chip voltage conversion apparatus for integrated circuits, comprising:
a first capacitor;
a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain;
a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain;
a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and
a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
2. The apparatus of claim 1, wherein the first capacitor comprises a deep trench capacitor.
3. The apparatus of claim 1, wherein the first and second NFET and PFET devices are formed on a silicon-on-insulator (SOI) substrate.
4. The apparatus of claim 1, wherein actuating signals to the first and second NFET and PFET devices are applied so as to charge and discharge the first capacitor between a first magnitude corresponding to the voltage difference across the first voltage domain and a second magnitude corresponding to the voltage difference across the second voltage domain.
5. The apparatus of claim 1, wherein for a down-conversion mode operation, the high side voltage rail of the second voltage domain, V2, is an input voltage and the high side voltage rail of the first voltage domain, V1, is an output voltage, such that V2>2*V1.
6. The apparatus of claim 1, wherein for an up-conversion mode operation, the high side voltage rail of the first voltage domain, V1, is an input voltage and the high side voltage rail of the second voltage domain, V2, is an output voltage, such that V2<2*V1.
7. The apparatus of claim 4, wherein the actuating signals to the first and second NFET and PFET devices are applied in a manner so as to prevent simultaneous conduction of any NFET device and any PFET device.
8. The apparatus of claim 4, wherein an output current is proportional to a switching frequency of the actuating signals.
9. The apparatus of claim 1, wherein:
gate terminals of the first NFET and PFET devices operate entirely within the first voltage domain; and
gate terminals of the second NFET and PFET devices operate entirely within the second voltage domain.
10. The apparatus of claim 1, further comprising:
one or more additional capacitors in series with the first capacitor;
one or more pairs of additional NFET and PFET devices associated with one or more additional voltage domains for each one or more additional capacitors so as to define a voltage converter that nominally converts a voltage level of N voltage units to a voltage level of M voltage units and vice versa;
wherein N represents the total number of pairs of NFET and PFET devices, N\u22121 represents the total number of capacitors, and 1\u2266M\u2266N\u22121.
11. The apparatus of claim 10, wherein the pairs of NFET and PFET devices in each voltage domain are controlled in a manner so as to charge and discharge the associated capacitor between a first magnitude and a second magnitude, wherein for the Xth capacitor of the apparatus, the first magnitude corresponds to the voltage difference across the Xth voltage domain and the second magnitude corresponds to the voltage difference across the (X+1)th voltage domain.
12. The apparatus of claim 11, wherein the NFET and PFET devices are operated in a manner so as to prevent simultaneous conduction of any NFET device and any PFET device.
13. The apparatus of claim 10, wherein for a down-converter mode of operation, the converter serves an N-to-M down-converter.
14. The apparatus of claim 10, wherein for an up-converter mode of operation, the converter serves an M-to-N up-converter.
15. The apparatus of claim 10, wherein a first plurality of voltage levels are converted to a second plurality of voltage levels.
16. The apparatus of claim 1, wherein the first and second NFET and PFET devices are formed on bulk silicon substrates with triple well technology.
17. An on-chip voltage conversion system for integrated circuits, comprising:
a clock source having a plurality of clock phases;
a plurality of actuating signals corresponding to one of a plurality of phases; and
a plurality of voltage converters controlled by the actuating signals, with each voltage converter comprising:
a first capacitor;
a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain;
a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain;
a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and
a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
18. An on-chip voltage conversion system for integrated circuits, comprising:
a clock source having a plurality of clock phases;
a plurality of actuating signals corresponding to one of a plurality of phases; and
a plurality of voltage converters controlled by the actuating signals, with each voltage converter comprising:
a first capacitor;
a first pair of NFET and PFET devices associated with a first voltage domain, with a first NFET of the first pair configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of the first voltage domain, and a first PFET of the first pair configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain;
a second pair of NFET and PFET devices associated with a second voltage domain, with a second NFET of the second pair configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of the second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain, and a second PFET of the second voltage domain configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain; and
one or more additional capacitors in series with the first capacitor;
one or more additional pairs of NFET and PFET devices associated with one or more additional voltage domains for each one or more additional capacitors so as to define a multiple level converter that nominally converts a voltage level of N voltage units to a voltage level of M voltage units and vice versa;
wherein N represents the total number of pairs of switching devices, N\u22121 represents the total number of capacitors, and 1\u2266M\u2266N\u22121.
19. The system of claim 18, wherein actuating signals to the pairs of NFET and PFET devices in each voltage domain are applied so as to charge and discharge the associated capacitor between a first magnitude and a second magnitude, wherein for the Xth capacitor of the apparatus, the first magnitude corresponds to the voltage difference across the Xth voltage domain and the second magnitude corresponds to the voltage difference across the (X+1)th voltage domain.
20. The system of claim 19, wherein the actuating signals to the NFET and PFET devices in each pair are applied in a manner so as to prevent simultaneous conduction of the NFET and PFET devices.
21. A method of implementing on-chip voltage conversion for integrated circuits, the method comprising:
using a first NFET device to selectively couple a first electrode of a first capacitor to a low side voltage rail of a first voltage domain;
using a first PFET device to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain;
using a second NFET device to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and
using a second PFET device to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
22. The method of claim 21, wherein the first capacitor comprises a deep trench capacitor.
23. The method of claim 22, wherein the first and second NFET and PFET devices are formed on a silicon-on-insulator (SOI) substrate.
24. The method of claim 21, further comprising applying actuating signals to the first and second NFET and PFET devices so as to charge and discharge the first capacitor between a first magnitude corresponding to the voltage difference across the first voltage domain and a second magnitude corresponding to the voltage difference across the second voltage domain.
25. The method of claim 24, wherein for a down-conversion mode operation, the voltage of the second voltage domain, V2, is an input voltage and the voltage of the first voltage domain, V1, is an output voltage, such that V2>2*V1.
26. The method of claim 24, wherein for an up-conversion mode operation, the voltage of the first voltage domain, V1, is an input voltage and the voltage of the second voltage domain, V2, is an output voltage, such that V2<2*V1.

1. A counter-flow heat exchanger for a vehicle air conditioning system, comprising:
a first lateral tank having an inlet chamber and an outlet chamber, said first lateral tank including an inlet port fluidly connected to said inlet chamber and an outlet port fluidly connected to said outlet chamber, said outlet port positioned adjacent an uppermost portion of said first lateral tank for reducing air pockets;
a second lateral tank laterally spaced apart from said first lateral tank;
a first set of tubes fluidly connecting said inlet chamber of said first lateral tank to said second lateral tank; and
a second set of tubes fluidly connecting said second lateral tank to said outlet chamber of said first lateral tank,
wherein said first lateral tank includes a first face and a second, opposite face, spaced apart longitudinal, opposite sides extending between said first and second faces and spaced apart transverse, opposite sides extending between said first and second faces, said longitudinal sides include an upper longitudinal side and a lower longitudinal side, said outlet port positioned adjacent said upper longitudinal side, and said outlet chamber includes a first portion disposed adjacent and along said lower longitudinal side and a second portion angularly disposed relative to said first portion and disposed adjacent and along an upper one of said transverse sides and extending between said longitudinal sides.
2. The counter-flow heat exchanger of claim 1 wherein said first set of tubes and said second set of tubes extend generally horizontally between said first and second lateral tanks.
3. The counter-flow heat exchanger of claim 1 wherein said first lateral tank includes said first face to which said first and second sets of tubes are connected and said second, opposite face in which said inlet and outlet ports are defined.
4. The counter-flow heat exchanger of claim 1 wherein said inlet port is positioned adjacent said upper longitudinal side and said first set of inlet tubes are generally disposed adjacent and along said upper longitudinal side.
5. The counter-flow heat exchanger of claim 1 wherein said outlet chamber generally has an L-shape with said second portion forming a base of said L-shape and said first portion forming a height of said L-shape.
6. The counter-flow heat exchanger of claim 1 wherein said transverse sides include an upper transverse side and a lower transverse side, said outlet port positioned adjacent said upper transverse side.
7. The counter-flow heat exchanger of claim 1 wherein said outlet port is positioned adjacent an intersection between one of said longitudinal sides and one of said transverse sides.
8. The counter-flow heat exchanger of claim 7 wherein said lateral tanks are angularly oriented such that an intersection between said one of said longitudinal sides and said one of said transverse sides forms said uppermost portion of said first lateral tank.
9. The counter-flow heat exchanger of claim 1 further including a separator disposed in said first lateral tank to define, together with interior wall surfaces of said first lateral tank, said inlet chamber and said outlet chamber, said separator having a first section dividing said first lateral tank longitudinally between said inlet chamber and said outlet chamber and a second section angularly disposed relative to said first section.
10. The counter-flow heat exchanger of claim 9 wherein said separator generally has an L-shape with said second section forming a base of said L-shape and said first section forming a height of said L-shape.
11. The counter-flow heat exchanger of claim 10 wherein said inlet chamber is formed along and adjacent said upper longitudinal side of said first lateral tank and said L-shape of said separator positions a portion of said outlet chamber along said upper longitudinal side.
12. The counter-flow heat exchanger of claim 11 wherein said inlet port and said outlet port are defined on said second face of said first lateral tank facing away from said first and second sets of tubes, said inlet port and said outlet port both positioned on said second face adjacent said upper longitudinal side.
13. A heater core for a vehicle air conditioning system, comprising:
a pair of horizontally spaced apart tanks including an inletoutlet tank and a reversing tank, said inletoutlet tank having an inlet chamber and an outlet chamber disposed therein;
a first set of tubes extending between said pair of horizontally spaced apart tanks and defining a fluid path from said inlet chamber of said inletoutlet tank to said reversing tank; and
a second set of tubes extending between said pair of horizontally spaced part tanks and further defining said fluid path from said reversing tank to said outlet chamber of said inletoutlet tank, said outlet chamber having a first portion arranged at a higher elevation than said inlet chamber, and
a separator is disposed within said inletoutlet tank to separate said inletoutlet tank into said inlet chamber and said outlet chamber, said separator spanning between horizontally spaced apart first and second walls and shaped to position said inlet chamber directly above a second portion of said outlet chamber.
14. The heater core of claim 13 further including:
an inlet port defined through a wall of said inletoutlet tank to fluidly connect to said inlet chamber; and
an outlet port defined through a wall of said inletoutlet tank at a location of said portion of said outlet chamber arranged at said higher elevation to fluidly connect to said outlet chamber and thereby reduce the likelihood of air bubbles forming in said inletoutlet tank.
15. The heater core of claim 13 wherein said outlet chamber extends horizontally between said horizontally spaced apart walls, including a said first wall having a plurality of tube ports fluidly connected to said second set of tubes and a said second, opposite wall, said outlet chamber generally has an L-shape including a base portion and a height portion, said base portion includes said first portion of said outlet chamber arranged at said higher elevation and said height portion includes said second portion of said outlet chamber.
16. The heater core of claim 15 wherein said separator is L-shaped.
17. The heater core of claim 13 wherein said pair of horizontally spaced apart tanks are angularly disposed.
18. A vehicle heat exchanger with counter-flow, comprising:
an inletoutlet tank having an inlet port and an inlet chamber connected therewith, and further having an outlet port and an outlet chamber connected therewith;
a reversing tank laterally and horizontally spaced apart from said inletoutlet tank, said reversing tank having a reversing chamber;
tubes connecting said inlet chamber with said reversing chamber and connecting said reversing chamber with said outlet chamber; and
wherein said outlet chamber generally has an L-shape including a base portion and a height portion, said base portion forming an uppermost portion of said inletoutlet tank elevated above said inlet chamber, and said inlet chamber has a rectangular shape and is positioned directly above said height portion of said outlet chamber.
19. The vehicle heat exchanger of claim 18 wherein said tubes include:
a first set of tubes extending from and fluidly connecting said inlet chamber to said reversing chamber;
a second set of tubes extending from and fluidly connecting said reversing chamber to said outlet chamber;
a first fluid path defined by tubes of said first and second sets of tubes that are disposed along said base portion;

at least a second fluid path defined by tubes of said first set of tubes disposed adjacent said height portion and tubes of said second set of tubes connected to said height portion of said outlet chamber.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1-40. (canceled)
41. A system for use in a network device supporting advertising of multimedia information services, the system comprising:
at least one processor operably coupled to circuitry for communication via at least one wireless network, and operably coupled to circuitry for communication via a broadband network, the at least one processor arranged to, at least:
determine, via one or both of the at least one wireless network andor the broadband network, service information comprising availability of media-related services and a service advertisement of selectable services offered by the network device;
download, upgrade andor update operating code when a user device that supports services or features that are not presently supported by the network device gains access to the network device via the at least one wireless network; and
transmit the service information comprising the availability of media-related services and the service advertisement of the selectable services offered by the network device to the user device via the at least one wireless network.
42. The system according to claim 41, wherein the network device is a gateway device.
43. The system according to claim 41, wherein the user device is an access device.
44. The system according to claim 41, wherein the user device comprises a mobile multimedia handset.
45. The system according to claim 41, wherein multimedia information comprises one or more of streaming video, broadcast video, voice, digital data, text, digitized audio, digitized still images, digitized video, andor digitized music.
46. The system according to claim 41, wherein media-related services comprise one or more of accessing, recording, playing, exchanging, transmitting, receiving, converting, andor translating.
47. The system according to claim 41, wherein the network device is capable of downloading executable code for operating one or both of the network device andor the user device.
48. The system according to claim 41, wherein the circuitry for communication via at least one wireless network is compliant with the Bluetooth V1.2 or compatible personal area network (PAN) specification.
49. The system according to claim 41, wherein the broadband network comprises one or more of a digital subscriber line (DSL) network, a cable network, a satellite network, a cellular network, andor the Internet.
50. A method for use in operating a network device supporting advertising of multimedia information services, the method comprising:
determining, via one or both of at least one wireless network andor a broadband network, service information comprising availability of media-related services and a service advertisement of selectable services offered by the network device;
downloading, upgrading andor updating operating code when a user device that supports services or features that are not presently supported by the network device gains access to the network device via the at least one wireless network; and
transmitting the service information comprising the availability of media-related services and the service advertisement of the selectable services offered by the network device to the user device via the at least one wireless network.
51. The method according to claim 50, wherein the network device is a gateway device.
52. The method according to claim 50, wherein the user device comprises a mobile multimedia handset.
53. The method according to claim 50, wherein multimedia information comprises one or more of streaming video, broadcast video, voice, digital data, text, digitized audio, digitized still images, digitized video, andor digitized music.
54. The method according to claim 50, wherein media-related services comprise one or more of accessing, recording, playing, exchanging, transmitting, receiving, converting, andor translating.
55. The method according to claim 50, wherein the network device is capable of downloading executable code for operating one or both of the network device andor the user device.
56. The method according to claim 50, wherein the at least one wireless interface is compliant with one or more of the Institute of Electrical and Electronics Engineers (IEEE) 802.11a, 802.11b, 802.11g, andor 802.11n standards.
57. The method according to claim 50, wherein the broadband network comprises one or more of a digital subscriber line (DSL) network, a cable network, a satellite network, a cellular network, andor the Internet.
58. A non-transitory computer-readable medium having a plurality of code sections, each code section comprising a plurality of instructions executable by a processor for causing the processor to perform operations comprising:
determining, via one or both of at least one wireless network andor a broadband network, service information comprising availability of media-related services and a service advertisement of selectable services offered by the network device;
downloading, upgrading andor updating operating code when a user device that supports services or features that are not presently supported by the network device gains access to the network device via the at least one wireless network; and
transmitting the service information comprising the availability of media-related services and the service advertisement of the selectable services offered by the network device to the user device via the at least one wireless network.
59. The non-transitory computer-readable medium according to claim 58, wherein the network device is a set top box arranged to provide signals to a television.
60. The non-transitory computer-readable medium according to claim 58, wherein the user device comprises a mobile multimedia handset.