Author: claimsbot

What is claimed is:

1. A method for forming a ferroelectric capacitor in a semiconductor device, comprising the steps of:
forming a strontium-bismuth-tantalum oxide film on a semiconductor substrate, with a conductive film for a lower electrode having been formed on the semiconductor substrate (first step);
flowing an NH3 gas at a stabilizing step of a rapid thermal annealing so as to reduce organic materials bonded with metal elements of the strontium-bismuth-tantalum oxide film (second step);
flowing an oxide gas at a temperature of 450650 C. at an annealing step of the rapid thermal annealing so as to induce a perovskite nuclear formation in the strontium-bismuth-tantalum oxide film (third step); and
carrying out a furnace annealing so as to induce a grain growth in the strontium-bismuth-tantalum oxide film (fourth step).
2. The method as claimed in claim 1, wherein the second step is carried out at a temperature of 30045 C.
3. The method as claimed in claim 1, wherein the oxide gas is at least one selected from the group consisting of: O2, N2O, H2O, H2O2, and O3.
4. The method as claimed in claim 1, wherein the strontium-bismuth-tantalum oxide film is SrxBiyTa2O9 or SrxBiy(TaiNbj)2O9.
5. The method as claimed in claim 2, wherein the oxide gas is at least one selected from the group consisting of: O2, N2O, H2O, H2O2, and O3.
6. The method as claimed in claim 2, wherein the strontium-bismuth-tantalum oxide film is SrxBiyTa2O9 or SrxBiy(TaiNbj)2O9.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An assembly for aseptically storing a substance in a flexible pouch, dispensing multiple portions of stored substance therefrom, and maintaining substance remaining in the flexible pouch in an aseptic condition sealed with respect to ambient atmosphere, wherein the assembly is receivable within a relatively rigid housing and adapted to cooperate with a pump for pumping discrete portions of the substance from the flexible pouch and through a one-way valve to dispense the substance therefrom, the assembly comprising:
the flexible pouch defining therein a variable-volume storage chamber sealed with respect to the ambient atmosphere for aseptically storing therein multiple portions of the substance;
a one-way valve connectible in fluid communication with the substance from the variable-volume storage chamber and including a valve seat; and a valve portion overlying the valve seat, wherein the valve portion defines an interference fit with the valve seat, the valve portion and the valve seat define a normally closed valve opening therebetween, and the valve portion is movable between (i) a normally closed position with the valve portion engaging the valve seat, and (ii) an open position with at least a segment of the valve portion spaced away from the valve seat to allow passage of substance from the variable-volume storage chamber through the valve opening, wherein in the normally closed and open positions the one-way valve maintains the substance remaining in the variable-volume storage chamber in the aseptic condition and sealed with respect to the ambient atmosphere; and
a pump operatively coupled between the variable-volume storage chamber and the one-way valve, and a control unit electrically coupled to the pump to control operation of the pump and, in turn, control dispensing of substance within the variable-volume storage chamber, through the one-way valve, and out of the assembly.
2. An assembly as defined in claim 1, wherein the flexible pouch defines a sealed, empty, aseptic storage chamber adapted to receive therein a substance to be stored and dispensed therefrom.
3. An assembly as defined in claim 1, wherein the flexible pouch is aseptically filled with a substance that is at least one of a vaccine, medicine, pharmaceutical product, food and beverage.
4. An assembly as defined in claim 3, wherein the substance is selected from the group including a milk-based product, a non-acid product, a water-based product, milk, evaporated milk, condensed milk, cream, half-and-half, baby formula, growing up milk, yogurt, soup, ice cream, juice, syrup, coffee, condiments, ketchup, mustard, mayonnaise, and coffee aroma.
5. An assembly as defined in claim 1, further comprising a flexible tube coupled in fluid communication between the pouch and one-way valve.
6. An assembly as defined in claim 5, wherein the flexible tube is connected to the flexible pouch and one-way valve by at least one of (i) a fitting mounted on at least one of the flexible pouch and one-way valve that frictionally engages a respective end of the tube to form a hermetic seal therebetween, (ii) a heat seal, (iii) a weld, and (iv) an adhesive.
7. An assembly as defined in claim 1, wherein the pouch is formed of a plastic laminate including an oxygenwater barrier and an approved food contact layer.
8. An assembly as defined in claim 1, in combination with a dispenser comprising a relatively rigid container receiving therein the flexible pouch, and a surface for supporting and positioning the one-way valve for dispensing substances therefrom and into another container.
9. An assembly and dispenser as defined in claim 8, wherein the dispenser includes at least one pouch, and the at least one pouch includes at least one of coffee, coffee concentrate, milk, milk-based product, half-and-half, and creamer.
10. An assembly and dispenser as defined in claim 9, wherein the dispenser includes at least one additional pouch containing coffee aroma.
11. An assembly as defined in claim 1, further comprising a relatively rigid container receiving therein the flexible pouch.
12. An assembly as defined in claim 11, wherein the relatively rigid container is made of either cardboard or plastic.
13. An assembly as defined in claim 1, wherein the pump comprises a peristaltic pump.
14. An assembly as defined in claim 5, wherein the pump comprises a peristaltic pump that engages an external portion of the flexible tube to pump substance therethrough.
15. An assembly as defined in claim 1, wherein at least one of (i) the valve portion and valve seat define a decreasing degree of interference therebetween in a direction from an upstream end toward a downstream end of the valve opening, (ii) the valve portion defines a decreasing radial thickness when moving in a direction from an upstream end toward a downstream end of the valve opening, and (iii) the valve portion and valve seat define a configuration such that the energy required to open respective segments in the valve portion progressively decreases in a direction from an upstream end toward a downstream end of the valve opening.
16. An assembly as defined in claim 1, further comprising a penetrable and resealable portion, wherein the penetrable and resealable portion is (i) penetrable with a filling or injection member for introducing the substance therethrough and into the variable volume storage chamber, and (ii) resealable to reseal a resultant penetrated region of the penetrable and resealable portion, and in turn, seal the substance in the variable-volume storage chamber with respect to the ambient atmosphere.
17. An assembly as defined in claim 16, wherein the penetrable and resealable portion is thermally resealable by applying at least one of laser radiation and thermal energy thereto.
18. An assembly for aseptically storing a substance in a flexible pouch, dispensing multiple portions of stored substance therefrom, and maintaining substance remaining in the flexible pouch in an aseptic condition sealed with respect to ambient atmosphere, wherein the assembly is receivable within a relatively rigid housing and adapted to cooperate with a pump for pumping discrete portions of the substance from the flexible pouch and through a one-way valve to dispense the substance therefrom, the assembly comprising:
first means defining therein a flexible, variable-volume storage chamber sealed with respect to the ambient atmosphere for aseptically storing therein multiple portions of the substance;
second means for allowing substance from the variable-volume storage chamber to be dispensed therethrough, and for maintaining the substance remaining in the variable-volume storage chamber in an aseptic condition and sealed with respect to the ambient atmosphere during and after dispensing of substance therethrough; wherein the second means includes third means for forming a valve seat, and fourth means mounted on the third means, and including an elastic, portion overlying the third means defining an interference fit with the third means, and defining between the third and fourth means, a normally closed, valve opening, and for moving between (i) a normally closed position with the fourth means engaging the third means, and (ii) an open position with at least a segment of the fourth means spaced away from the third means to allow passage of substance from the variable-volume storage chamber through the valve opening, and for maintaining the substance remaining in the variable-volume storage chamber in the aseptic condition and sealed with respect to the ambient atmosphere in the normally closed and open positions; and
a pump operatively coupled between the variable-volume storage chamber and the second means, and a control unit electrically coupled to the pump to control operation of the pump and, in turn, control dispensing of substance within the variable-volume storage chamber, through the second means, and out of the assembly.
19. An assembly as defined in claim 18, wherein the variable-volume storage chamber contains a milk-based product, and the second means is for substantially preventing micro-organisms from entering into the variable-volume storage chamber and for permitting the milk-based product to be stored and dispensed without refrigeration.
20. An assembly as defined in claim 18, wherein the first means is a flexible pouch, the second means is one-way valve, the third means is a valve body, and the fourth means is a flexible valve cover.
21. A method for storing substance and dispensing multiple portions of stored substance, comprising the following steps:
(1) providing an assembly comprising (i) a storage chamber, (ii) a one-way valve connectible in fluid communication with substance from the storage chamber and including a valve seat and a valve portion overlying the valve seat, wherein the valve portion defines an interference fit with the valve seat, the valve portion and the valve seat define a normally closed valve opening therebetween, and the valve portion is movable relative to the valve seat between a normally closed position with the valve portion engaging the valve seat, and an open position with at least a segment of the valve portion spaced away from the valve seat to allow passage of substance from the storage chamber through the valve opening, and (iii) a pump operatively coupled between the storage chamber and the one-way valve, and a control unit electrically coupled to the pump to control operation of the pump and, in turn, control dispensing of the substance within the storage chamber, through the one-way valve, and out of the assembly;
(2) storing multiple portions of the substance in the storage chamber in an aseptic condition;
(3) actuating the control unit and pump and in turn, dispensing the substance from the storage chamber through the one-way valve and out of the assembly; and
(4) maintaining the substance in the storage chamber in the aseptic condition during the shelf life and dispensing of the substance through the one-way valve.
22. A method as defined in claim 21, wherein
the storage chamber comprises a hermetically sealed variable volume-storage chamber;
the storing step further comprises storing the substance in the variable storage chamber at least one of (i) in a substantially airless condition, (ii) preservative-free, and (iii) at ambient temperature; and
the maintaining step further comprises maintaining the substance in the variable-volume storage chamber at least one of (i) in a substantially airless condition, (ii) preservative-free, and (iii) at ambient temperature during the shelf life and dispensing of the substance through the one-way valve.
23. A method as defined in claim 21, wherein at least one of (i) the valve portion and valve seat define a decreasing degree of interference therebetween in a direction from an upstream end toward a downstream end of the valve opening, (ii) the valve portion defines a decreasing radial thickness when moving in a direction from an upstream end toward a downstream end of the valve opening, and (iii) the valve portion and valve seat define a configuration such that the energy required to open respective segments in the valve portion progressively decreases in a direction from an upstream end toward a downstream end of the valve opening.
24. A method as defined in claim 21, further comprising the step of aseptically filling the storage chamber with at least one of a vaccine, medicine, pharmaceutical product, food and beverage.
25. A method as defined in claim 24, wherein the filling step comprises filling the storage chamber with at least one of a milk-based product, a baby formula, and a water-based product.
26. A method as defined in claim 24, wherein the assembly further comprises a penetrable and resealable portion; and
the step of aseptically filling the storage chamber comprises:
penetrating the penetrable and resealable portion with a filling or injection member;
introducing the substance through the filling or injection member and into the storage chamber;
withdrawing the filling or injection member from the penetrable and resealable portion; and
hermetically resealing the penetrable and resealable portion.
27. A method as defined in claim 26, wherein the resealing step comprises applying either thermal energy or laser radiation and thereby thermally resealing the penetrable and resealable portion.
28. A method as defined in claim 21, wherein the pump comprises a peristaltic pump, the assembly further comprises a flexible tube coupled in fluid communication between the pouch and one-way valve, and the dispensing step includes engaging with the peristaltic pump an external portion of the flexible tube and pumping the substance therethrough.

1. A nitride read only memory cell comprising:
a silicon-germanium layer comprising a pair of sourcedrain regions;
a strained silicon layer overlying the silicon-germanium layer;
a nitride layer overlying the strained silicon layer; and
a control gate overlying the nitride layer.
2. The cell of claim 1 wherein, during operation of the cell, a channel forms in the strained silicon layer between the pair of sourcedrain regions and a first charge storage region of the nitride layer establishes a virtual sourcedrain region in the channel, the virtual sourcedrain region having a lower threshold voltage than a remaining portion of the channel.
3. The cell of claim 2 wherein at least a portion of the channel is in a vertical configuration.
4. The cell of claim 2 wherein the channel is in a planar configuration.
5. The cell of claim 1 and further including a substrate bias connection that is capable of applying a bias to the substrate.
6. The cell of claim 5 wherein the substrate bias is in a range of \u22121V to \u22122V.
7. The cell of claim 3 wherein the vertical channel configuration is two-dimensional.
8. The cell of claim 2 wherein the virtual sourcedrain region is established in response to an absence of electrons on a portion of the nitride layer.
9. The cell of claim 1 wherein the substrate is a p-type silicon material and the sourcedrain regions are an n-type silicon material.
10. The cell of claim 1 wherein the nitride layer is isolated from the strained silicon layer by a first oxide dielectric material and from the control gate by a second oxide dielectric material.
11. The cell of claim 1 wherein the strained silicon layer is formed by one of ultra-high vacuum chemical vapor deposition, ion implantation, micromechanical strain, or mechanical strain.
12. The cell of claim 1 wherein the strained silicon layer is due to a lattice mismatch between the silicon and the silicon-germanium layer with a larger lattice spacing.
13. The cell of claim 1 wherein ballistic direct injection is used to program the cell.
14. The cell of claim 1 wherein the nitride layer is part of a composite gate dielectric layer that is a composite oxide-nitride-oxide layer wherein the nitride is a charge trapping layer.
15. The cell of claim 14 wherein the gate dielectric is a composite oxide-nitride nanolaminate gate insulator.
16. The cell of claim 3 wherein the channel is less than 50 nm in length.
17. The cell of claim 3 wherein the channel is less than 100 nm in length.
18. A nitride read only memory cell comprising:
a silicon-germanium layer comprising a pair of sourcedrain regions;
a strained silicon layer formed overlying the silicon-germanium layer;
a split gate nitride layer comprising a pair of charge storage regions; and
a control gate formed overlying the nitride layer and comprising a depression formed between the pair of charge storage regions that splits the nitride layer such that the pair charge storage regions are electrically isolated from each other.
19. The cell of claim 18 wherein, during operation of the cell, a virtual sourcedrain region is established in a channel in the strained silicon layer between the pair of sourcedrain regions in response to a drain voltage being applied to a first sourcedrain region adjacent the virtual sourcedrain region.
20. The cell of claim 19 wherein the virtual sourcedrain region is established in response to a first charge storage region on the split gate nitride layer, the virtual sourcedrain region having a lower threshold voltage than a remaining portion of the channel.
21. The cell of claim 18 wherein the split gate nitride layer is part of an oxide-nitride-oxide layer.
22. The cell of claim 19 wherein the virtual sourcedrain region is established in response to a positive charge on the first charge storage region.
23. The cell of claim 18 wherein the silicon-germanium layer is formed on a silicon substrate.
24. The cell of claim 18 wherein the strained silicon layer is formed by one of ultra-high vacuum chemical vapor deposition, ion implantation, micromechanical strain, or mechanical strain.
25. A nitride read only memory cell comprising:
a pillar in a silicon-germanium layer, the pillar being defined by a plurality of trenches;
a pair of sourcedrain regions, each sourcedrain region located under a different trench;
a strained silicon layer formed overlying the silicon-germanium layer at the top of each pillar;
a pair of vertical nitride charge storage regions that are separated by the pillar; and
a control gate formed overlying the pair of vertical charge storage regions and the pillar.
26. The cell of claim 25 wherein, during operation of the cell, the pair of sourcedrain regions are linked by a two-dimensional channel that follows a surface of the pillar.
27. The cell of claim 26 wherein, during operation of the cell, a first nitride charge storage region establishes a virtual sourcedrain region in the channel adjacent to the first nitride charge storage region, the virtual sourcedrain region having a lower threshold voltage than a remaining portion of the channel
28. The cell of claim 25 wherein the pair of vertical nitride charge storage regions form a split nitride layer.
29. The cell of claim 25 wherein a depression of the control gate is formed in the trench to separate a first flash memory cell from a second flash memory cell.
30. The cell of claim 25 and further including an insulator layer under the silicon-germanium layer to form a silicon-on-insulator structure.
31. The cell of claim 25 wherein the sourcedrain regions link a plurality of flash memory cells in a virtual ground array configuration.
32. The cell of claim 25 wherein the nitride read only memory cell is a NAND flash memory cell.
33. The cell of claim 25 wherein the nitride read only memory cell is a NOR flash memory cell.
34. The cell of claim 25 wherein the cell is programmable by ballistic direct injection.
35. The cell of claim 26 wherein the channel is less than 50 nm in length.
36. The cell of claim 26 wherein the channel is less than 100 nm in length.
37. The cell of claim 25 wherein the control gate is separated from the pair of vertical charge storage regions and the pillar by an oxide dielectric material.
38. A nitride read only memory cell array comprising:
a plurality of flash memory cells coupled together through wordlines and bitlines, each cell comprising:
a silicon-germanium layer comprising a pair of sourcedrain regions;
a strained silicon layer formed overlying the silicon-germanium layer;
a nitride floating gate layer, comprising a plurality of charge storage areas, formed overlying the strained silicon layer; and
a control gate formed overlying the nitride floating gate layer.
39. The array of claim 38 wherein, during operation of each cell, the pair of source drain regions are linked by a channel in the strained silicon layer.
40. The array of claim 39 wherein, during operation of each cell, a first charge storage area establishes a virtual sourcedrain region in the channel, the virtual sourcedrain region having a lower threshold voltage than a remaining portion of the channel
41. The array of claim 38 wherein the plurality of memory cells are configured in a NAND-type architecture.
42. The array of claim 38 wherein the plurality of flash memory cells are configured in a NOR-type architecture.
43. An electronic system comprising:
a processor that generates memory control signals; and
a flash memory cell array coupled to the processor and comprising a plurality of flash memory cells coupled together through wordlines and bitlines, each cell comprising:
a silicon-germanium layer comprising a pair of sourcedrain regions;
a strained silicon layer formed overlying the silicon-germanium layer, the pair of sourcedrain regions being linked by a channel in the strained silicon layer during operation of the cell;
a nitride floating gate layer, comprising a plurality of charge storage areas, formed overlying the strained silicon layer, wherein during operation of the cell a first charge storage region of the nitride floating gate layer establishes a virtual sourcedrain region in the channel, the virtual sourcedrain region having a lower threshold voltage than a remaining portion of the channel; and
a control gate formed overlying the nitride floating gate layer.
44. A method for writing to a nitride read only memory cell comprising at least one nitride charge storage region located between a substrate having two sourcedrain regions and a control gate, the two sourcedrain regions located in a silicon-germanium layer and linked by a channel a strained silicon layer on the silicon-germanium layer, the method comprising:
creating a positive charge on the floating gate;
grounding a first sourcedrain region;
applying a gate voltage to the control gate; and
applying a drain voltage to the second sourcedrain region such that ballistic direct injection occurs in a virtual sourcedrain region of the channel adjacent a first charge storage region of the at least one nitride charge storage region.
45. The method of claim 44 and further including applying a substrate bias to the substrate.
46. The method of claim 45 wherein the substrate bias is a negative voltage.
47. The method of claim 44 wherein creating the positive charge includes over-erasing the flash memory cell.
48. A method for writing to a nitride read only memory cell comprising a gate insulator layer having at least one charge storage region in a nitride layer located between oxide dielectric layers, a silicon-germanium layer having two sourcedrain regions and a control gate overlying the gate insulator layer, the two sourcedrain regions linked by a channel in a strained silicon layer overlying the silicon-germanium layer, the method comprising:
creating a positive charge on the floating gate;
grounding a first sourcedrain region;
applying a gate voltage to the control gate; and
applying a drain voltage to the second sourcedrain region such that the channel is pinched off a predetermined distance from the second sourcedrain region and adjacent to a first charge storage region of the nitride layer.
49. A nitride read only memory cell comprising:
a silicon-germanium layer comprising a pair of sourcedrain regions separated by a channel region that is less than 100 nm in length;
a strained silicon layer overlying the silicon-germanium layer;
a split gate nitride layer comprising a pair of charge storage regions; and
a control gate overlying the gate insulator layer and comprising a depression formed between the pair of charge storage regions that splits the nitride layer such that the charge storage regions are electrically isolated.
50. The cell of claim 49 wherein, during a programming operation of the cell, a channel and a virtual sourcedrain region form in the channel region, the virtual sourcedrain region forming in response to a charge on one of the pair of charge storage regions.
51. The cell of claim 49 wherein during a programming operation, ballistic direct injection is used.
52. A nitride read only memory cell comprising:
an insulator substrate comprising an oxide material;
a silicon-germanium layer overlying the insulator substrate, the silicon-germanium layer comprising a pair of sourcedrain regions separated by a channel region;
a strained silicon layer overlying the silicon-germanium layer;
a split gate oxide-nitride-oxide layer comprising a pair of charge storage regions; and
a control gate overlying the gate insulator layer and comprising a depression formed between the pair of charge storage regions that splits the nitride layer such that the charge storage regions are electrically isolated.
53. The cell of claim 52 wherein the channel region is less than 50 nm in length.
54. The cell of claim 52 wherein the oxide-nitride-oxide layer is 15 nm thick.
55. A method for manufacturing a nitride read only memory cell, the method comprising:
forming a silicon-germanium layer on a substrate, the silicon-germanium layer comprising a pair of sourcedrain regions;
forming a strained silicon layer overlying the silicon-germanium layer;
forming a nitride layer overlying the strained silicon layer; and
forming a control gate overlying the nitride layer.
56. The method of claim 55 wherein the substrate is an insulator material such that the silicon-germanium layer forms a silicon-on-insulator structure with the substrate.
57. The method of claim 55 wherein the control gate is comprised of a doped polysilicon material.
58. A method for manufacturing a split gate nitride read only memory cell, the method comprising:
forming a silicon-germanium layer on a substrate, the silicon-germanium layer comprising a pair of sourcedrain regions;
forming a strained silicon layer overlying the silicon-germanium layer;
forming a split gate nitride layer comprising a pair of charge storage regions; and
forming a control gate overlying the gate insulator layer and between the pair of charge storage regions that splits the nitride layer such that the charge storage regions are electrically isolated.
59. The method of claim 58 wherein the pair of sourcedrain regions are separated by less than 100 nm.
60. The method of claim 58 wherein the split gate nitride layer is approximately 5 nm thick and is part of an oxide-nitride-oxide structure.
61. A method for manufacturing a split gate nitride read only memory cell, the method comprising:
forming a silicon-germanium layer on a substrate, the silicon-germanium layer comprising a pair of sourcedrain regions;
forming a strained silicon layer overlying the silicon-germanium layer;
forming an oxide-nitride-oxide composite layer comprising a pair of charge storage regions; and
forming a control gate overlying the gate insulator layer.
62. The method of claim 61 wherein the control gate is formed such that it splits the oxide-nitride-oxide composite layer and electrically isolates the pair of charge storage regions.
63. The method of claim 61 wherein the oxide-nitride-oxide composite layer is formed in a thickness of approximately 15 nm.
64. The method of claim 61 wherein the strained silicon layer comprises a channel region, between the pair of sourcedrain regions, in which a channel forms during a programming operation of the cell.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A multistage flow control device, comprising:
a tubular with a plurality of one or more openings;
a plurality of seats positioned at the tubular; and
a plurality of plugs being movable relative to the tubular between at least a first position sealingly engaged with one of the plurality of seats and a second position displaced from the one of the plurality of seats, each of the plurality of plugs being movable from the first position to the second position in response to a pressure differential applied thereacross achieving a threshold value with a first of the plurality of plugs moving at a first threshold value and a second of the plurality of plugs moving at a second threshold value.
2. The multistage flow control device of claim 1, further comprising a third of the plurality of plugs moving at a third threshold value.
3. The multistage flow control device of claim 1, further comprising a plurality of biasing members with each of the plurality of biasing members biasing one of the plurality of plugs toward the first position.
4. The multistage flow control device of claim 1, wherein flow through a first of the plurality of one or more openings is prevented by the first of the plurality of plugs being in the first position and flow through the first of the plurality of one or more openings is allowed when at least the first of the plurality plugs is in the second position.
5. The multistage flow control device of claim 4, wherein flow through a second of the plurality of one or more openings is prevented by the second of the plurality plugs being in the first position and flow through the second of the plurality of one or more openings is allowed when at least the first of the plurality plugs and the second of the plurality plugs are in the second position.
6. The multistage flow control device of claim 5, wherein flow through a first flow-path between the first of the plurality plugs and a first of the plurality of seats is flowable through either the first of the plurality of one or more openings or the second of the plurality of one or more openings when the first of the plurality plugs and the second of the plurality plugs are both in the second position.
7. The multistage flow control device of claim 1, wherein a stem of the first of the plurality plugs is locatable within a cavity when the firsts of the plurality plug is in the second position.
8. The multistage flow control device of claim 7, wherein the cavity is in the second of the plurality plugs.
9. The multistage flow control device of claim 7, wherein fluid is displaced from the cavity when the stem is located within the cavity.
10. The multistage flow control device of claim 9, wherein the stem and the cavity are sized to dampen movement of the stem into and out of the cavity by restricting fluid flow rates into and out of the cavity.
11. The multistage flow control device of claim 1, wherein flow area through each of the plurality of one or more openings of the multistage flow control device is controlled by the total area of flow of the plurality of one or more openings open to flow at a given pressure differential across the multistage flow control device.
12. A method of controlling flow of fluid through a tubular, comprising:
building pressure differential across a flow control device;
moving a first plug at a first threshold value of the pressure differential;
flowing fluid through a first one or more openings in the tubular;
increasing the pressure differential across the flow control device;
moving a second plug at a second threshold value of the pressure differential; and
flowing fluid through the first one or more openings and a second one or more openings in the tubular.
13. The method of controlling flow of fluid through a tubular of claim 12, further comprising:
increasing the pressure differential across the flow control device;
moving a third plug at a third threshold pressure value of the pressure differential; and
flowing fluid through the first one or more openings, the second one or more openings and a third one or more openings in the tubular.
14. The method of controlling flow of fluid through a tubular of claim 12, further comprising damping a rate of movement of the first plug.
15. The method of controlling flow of fluid through a tubular of claim 14, further comprising displacing fluid within a cavity with the moving of a stem of the first plug into the cavity.
16. The method of controlling flow of fluid through a tubular of claim 15, further comprising restricting a rate of flow of fluid from the cavity.
17. The method of controlling flow of fluid through a tubular of claim 14, further comprising biasing at least one of the first plug and the second plug in a direction against movement caused by the pressure differential reaching the first threshold value or the second threshold value.
18. The method of controlling flow of fluid through a tubular of claim 12, further comprising decreasing pressure differential across the flow control device and moving the first plug and the second plug back to their original positions.
19. The method of controlling flow of fluid through a tubular of claim 18, further comprising damping a rate of movement of the first plug back to its original position by restricting flow of fluid into a cavity in the second plug that a portion of the first plug evacuates as the first plug is moved back toward its original position.