claimsbot – Page 18922 – All The Claims

1460740440-0913fc74-1680-4d33-9c77-198f4bab9c17

1. A dual-panel display system comprising:
a backlight;
a first image-generating panel;
a second contrast-improving panel;
a control module for selecting a codeword (CW) pair for driving said first image-generating panel and said second contrast-improving panel respectively according to input image data; and
further wherein said control module is capable of selecting the CW pair to improve final image rendering presented to a viewer.
2. The display according to claim 1, wherein the first image-generating panel comprises a monochrome LCD panel.
3. The display according to claim 2, wherein the second contrast-improving panel comprises a chromatic LCD panel.
4. The display according to claim 3, wherein said control module is capable of selecting a first CW for driving said first image-generating panel from among a set of possible CW pairs that satisfy a desired luminance setting according to input image data.
5. The display according to claim 4, wherein said first CW for driving said first image-generating panel is substantially the minimum CW value among the set of possible CW pairs that satisfy a desired luminance setting according to input image data.
6. The display according to claim 4 wherein said first CW for driving said first image-generating panel is substantially the CW for minimum Just Noticeable Difference (JND) steps among the set of possible CW pairs that satisfy a desired luminance setting according to input image data.
7. The display according to claim 4 wherein said control module is capable of:
selecting a first minimum CW for driving said first image-generating panel that is substantially the minimum CW value among the set of possible CW pairs that satisfy a desired luminance setting according to input image data;
selecting a first minimum JND CW for driving said first image-generating panel is substantially the CW for minimum JND steps among the set of possible CW pairs that satisfy a desired luminance setting according to input image data; and
combining minimum CW image data and minimum JND CW image data according to said first minimum CW image data and said first minimum JND CW image data to select a final first CW for driving said first image-generating panel.
8. The display according to claim 7 wherein said control module is capable of filtering said CW image data by spreading the energy of said CW image data while substantially maintaining the peak energy of the CW image data.
9. The display according to claim 8 wherein said spreading of energy comprises dilating and filtering of said CW image data.
10. The display according to claim 9 wherein said control module is capable of selecting a second CW to drive said second contrast-improving panel according to said first CW selected to drive said first image-generating panel.
11. The display according to claim 10 wherein said second CW is selected among a set of possible second CWs to improve final image rendering presented to a viewer.
12. In a dual-panel display system, said dual-panel display system comprising: a backlight, a first image-generating panel, a second contrast-improving panel, a method for selecting a codeword (CW) pair for driving said first image-generating panel and said second contrast-improving panel respectively according to input image data; the steps of said method comprising:
inputting image data to be rendered by said dual-panel display system;
finding a first CW for driving said first image-generating panel based upon input image data; and
finding a second CW for driving said second contrast-improving panel, said first CW and said second CW comprising the CW pair, and wherein the CW pair improves final image rendering according to a desired metric.
13. The method of claim 12 wherein the step of finding a first CW for driving said first image further comprises:
extracting the maximum color component value from the input image data; and
finding a first CW for said first image-generating panel that meets the maximum color component value extracted from the input image data.
14. The method of claim 13 wherein the step of finding a first CW for said first image-generating panel that meets the maximum color component value extracted from the input image data further comprises:
finding the set of possible CW pairs of first CWs and second CWs; and
selecting the first CW that is substantially minimum among the set of possible CW pairs.
15. The method of claim 13 wherein the step of finding a first CW for said first image-generating panel that meets the maximum color component value extracted from the input image data further comprises:
finding the set of possible CW pairs of first CWs and second CWs; and
selecting the first CW that substantially minimizes the JND steps among the set of possible CW pairs.
16. The method of claim 12 wherein the step of finding a first CW for driving said first image generating panel further comprises:
extracting the maximum color component value from the input image data; and
finding the CW for said first image-generating panel that meets the maximum color component value extracted from the input image data and substantially minimizes the JND steps.
17. The method of claim 16 wherein the step of finding the CW for said first image-generating panel that meets the maximum color component value extracted from the input image data and substantially minimizes the JND steps further comprises:
finding the set of possible CW pairs of first CWs and second CWs; and
selecting from the set of possible CW pairs the first CW that substantially minimizes the JND steps.
18. The method of claim 12 wherein said method further comprises the steps of:
finding the minimum CW image data;
finding the minimum JND CW image data; and
combining the minimum CW image data and the minimum JND CW image data to select a first CW.
19. The method of claim 18 wherein said step of combining the minimum CW image and the minimum JND CW image to select a final first CW image further comprises:
filtering the minimum CW image data and the minimum JND CW image data with a narrow filter to create a first intermediate CW image data;
filtering the minimum CW image data and the minimum JND CW image data with a wide filter to create a second intermediate CW image data;
mixing said first intermediate CW image data and said second intermediate CW image data to create a third CW image data.
20. The method of claim 19 wherein the step of mixing said first intermediate CW image data and said second intermediate CW image data to create a third CW data image further comprises:
creating said third CW image data such that said third CW image data comprises energy spread out while substantially maintaining the peak energy derivable from the input image data.
21. The method of claim 12 wherein said method further comprises the steps of:
finding said second CW such that the selected CW pair substantially minimizes JND steps.
22. The method of claim 12 wherein said method further comprises the steps of:
finding said second CW such that the selected CW pair substantially minimizes contouring in said final image presented to a viewer.
23. The method of claim 12 wherein said method further comprises the steps of:
finding said second CW such that the selected CW pair substantially minimizes parallax in said final image presented to a viewer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A display device comprising:
a capacitor comprising:
a first electrode; and
a second electrode;

a thin film transistor comprising:
an island-like semiconductor film;
a gate insulating film in contact with the island-like semiconductor film;
a gate electrode in contact with the gate insulating film;

a first nitride insulating film covering the thin film transistor;
a photosensitive organic resin film over and in contact with the first nitride insulating film, the photosensitive organic resin film having a first opening portion and a second opening portion;
a second nitride insulating film over and in contact with the photosensitive organic resin film, the second nitride insulating film having a third opening portion and a fourth opening portion overlapped with the first opening portion; and
a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,
wherein the capacitor comprises a part of the first nitride insulating film and a part of the second nitride insulating film which are overlapped with the first electrode and the second electrode in the second opening portion,
wherein the first electrode is formed from a same layer as the gate electrode, and
wherein the second electrode is formed from a same layer as the third electrode.
2. The display device according to claim 1, wherein the third electrode is a pixel electrode comprising an oxide conductive film.
3. The display device according to claim 1, wherein the first opening portion and the second opening portion are formed by exposure and development.
4. The display device according to claim 1, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
5. The display device according to claim 1, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.
6. An electronics employing the display device according to claim 1, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.
7. A display device comprising:
a capacitor comprising:
a first electrode; and
a second electrode;

a first nitride insulating film covering the thin film transistor;
a resin film over and in contact with the first nitride insulating film, the resin film having a first opening portion and a second opening portion;
a second nitride insulating film over and in contact with the resin film, wherein a part of the first nitride insulating film is in contact with a part of the second nitride insulating film in a bottom portion of the first opening portion, and wherein the second nitride insulating film has a third opening portion and a fourth opening portion overlapped with the first opening portion; and
a third electrode over the second nitride insulating film, the third electrode is electrically connected to the island-like semiconductor film,
wherein the capacitor comprises at least one of a part of the first nitride insulating film and a part of the second nitride insulating film which is overlapped with the first electrode and the second electrode in the second opening portion,
wherein the first electrode is formed from a same layer as the gate electrode,
wherein the second electrode is formed from a same layer as the third electrode,
wherein a section of an edge portion of the first opening portion curves, and
wherein a section of an edge portion of the second opening portion curves.
14. The display device according to claim 13, wherein the third electrode is a pixel electrode comprising an oxide conductive film.
15. The display device according to claim 13, wherein the first opening portion and the second opening portion are formed by exposure and development.
16. The display device according to claim 13, wherein each of the first nitride insulating film and the second nitride insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
17. The display device according to claim 13, wherein the second nitride insulating film is a silicon nitride film formed by a sputtering method using a high frequency discharge.
18. An electronics employing the display device according to claim 13, wherein the electronics is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproducing apparatus, a laptop computer, a game machine, a portable information terminal, an image reproducing apparatus, a television, and a cellular phone.
19. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
an inorganic insulating film over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening so as to expose a portion of a top surface of the inorganic insulating film around the first opening; and
a pixel electrode over the organic resin film,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening and the second opening.
20. The semiconductor device according to claim 19, wherein the inorganic insulating film comprises silicon and nitrogen.
21. The semiconductor device according to claim 19, wherein the curved inner wall surface includes a convex surface.
22. The semiconductor device according to claim 19, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
23. The semiconductor device according to claim 19, wherein a curvature radius of the curved inner wall surface is continuously changed.
24. The semiconductor device according to claim 19, wherein the electrode comprises metal.
25. The semiconductor device according to claim 19, wherein a diameter of the second opening is larger than a diameter of the first opening.
26. The semiconductor device according to claim 19, wherein the semiconductor layer comprises silicon.
27. The semiconductor device according to claim 19, wherein the inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
28. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening;
a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and
a pixel electrode over the second inorganic insulating film,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening.
29. The semiconductor device according to claim 28,
wherein the first inorganic insulating film is a silicon nitride film, and
wherein the second inorganic insulating film is a silicon nitride film.
30. The semiconductor device according to claim 28, wherein the curved inner wall surface includes a convex surface.
31. The semiconductor device according to claim 28, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
32. The semiconductor device according to claim 28, wherein a curvature radius of the curved inner wall surface is continuously changed.
33. The semiconductor device according to claim 28, wherein the electrode comprises metal.
34. The semiconductor device according to claim 28, wherein the semiconductor layer comprises silicon.
35. The semiconductor device according to claim 28, wherein the first inorganic insulating film comprises silicon and nitrogen.
36. The semiconductor device according to claim 28, wherein the first inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
37. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening;
a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and
a pixel electrode over the second inorganic insulating film,
wherein the second inorganic insulating film is in contact with the first inorganic insulating film in the second opening,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening.
38. The semiconductor device according to claim 37,
wherein the first inorganic insulating film is a silicon nitride film, and
wherein the second inorganic insulating film is a silicon nitride film.
39. The semiconductor device according to claim 37, wherein the curved inner wall surface includes a convex surface.
40. The semiconductor device according to claim 37, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
41. The semiconductor device according to claim 37, wherein a curvature radius of the curved inner wall surface is continuously changed.
42. The semiconductor device according to claim 37, wherein the electrode comprises metal.
43. The semiconductor device according to claim 37, wherein a diameter of the second opening is larger than a diameter of the first opening.
44. The semiconductor device according to claim 37, wherein the semiconductor layer comprises silicon.
45. The semiconductor device according to claim 37, wherein the first inorganic insulating film comprises silicon and nitrogen.
46. The semiconductor device according to claim 37, wherein the first inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.
47. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a semiconductor layer including a channel region over the gate electrode with the gate insulating film therebetween;
an electrode over and in contact with the semiconductor layer;
a first inorganic insulating film over the electrode, the first inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the first inorganic insulating film, the organic resin film including a second opening, wherein the second opening is overlapped with the first opening to expose a portion of a top surface of the first inorganic insulating film around the first opening;
a second inorganic insulating film comprising silicon and nitrogen over the organic resin film, the second inorganic insulating film including a third opening, wherein the third opening is overlapped with the first opening and the second opening; and
a pixel electrode over the second inorganic insulating film,
wherein a diameter of the second opening is larger than a diameter of the first opening,
wherein the organic resin film has a curved inner wall surface in the second opening, and
wherein the pixel electrode is electrically connected to the electrode through the first opening, the second opening, and the third opening.
48. The semiconductor device according to claim 47,
wherein the first inorganic insulating film is a silicon nitride film, and
wherein the second inorganic insulating film is a silicon nitride film.
49. The semiconductor device according to claim 47, wherein the curved inner wall surface includes a convex surface.
50. The semiconductor device according to claim 47, wherein a curvature radius of the curved inner wall surface is 3 \u03bcm to 30 \u03bcm.
51. The semiconductor device according to claim 47, wherein a curvature radius of the curved inner wall surface is continuously changed.
52. The semiconductor device according to claim 47, wherein the electrode comprises metal.
53. The semiconductor device according to claim 47, wherein the semiconductor layer comprises silicon.
54. The semiconductor device according to claim 47, wherein the first inorganic insulating film comprises silicon and nitrogen.
55. The semiconductor device according to claim 47, wherein the first inorganic insulating film is one selected from the group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, and an aluminum oxynitride film.

1460740432-10be0876-743d-42d4-bf7b-66bfd331a68e

1. A method of setting a Media Access Control (MAC) packet header when a MAC packet is transmitted in a mobile communication system, the method comprising the steps of:
setting a Length (LEN) unit of the MAC packet header to 1 byte when a Transport Block (TB) size is less than or equal to a first predetermined threshold value; and
setting the LEN unit to 2 bytes when the TB size is greater than the first predetermined threshold value and is less than or equal to a second predetermined threshold value.
2. The method as claimed in claim 1, further comprising setting the LEN unit to 4 bytes when the TB size is greater than the second predetermined threshold value.
3. The method as claimed in claim 2, further comprising generating a TB with a size set in a LEN field by padding the TB with zeros (0) when the TB size is greater than the first predetermined threshold value and is different from the size set in the LEN field.
4. The method as claimed in claim 2, further comprising transmitting information on the TB size over a control channel.
5. The method as claimed in claim 1, further comprising generating a TB with a size set in a LEN field by padding the TB with zeros (0) when the TB size is greater than the first predetermined threshold value and is different from the size set in the LEN field.
6. The method as claimed in claim 1, further comprising transmitting information on the TB size over a control channel.
7. A method of interpreting a Media Access Control (MAC) packet header when a MAC packet is received in a mobile communication system where size information of a Transport Block (TB) transmitted over a traffic channel is provided over a control channel, the method comprising the steps of:
receiving the size information of the TB over the control channel;
interpreting a LEN field of the MAC packet header at face value when the received size information is less than or equal to a first predetermined threshold value; and
interpreting the LEN field of the MAC packet header as indicating a size that is as twice as large as a LEN field value when the received size information is greater than the first predetermined threshold value and is less than or equal to a second predetermined threshold value.
8. The method as claimed in claim 7, further comprising interpreting the LEN field of the MAC packet header as indicating a size that is four times as large as the LEN field value when the received size information is greater than the second predetermined threshold value.
9. An apparatus for setting a Media Access Control (MAC) packet header when a MAC packet is transmitted in a mobile communication system, the apparatus comprising:
at least one Radio Link Control (RLC) transmission unit for splitting application data received from an upper layer into transport data blocks with a size transmittable over a traffic channel, and outputting the split data blocks;
a data construction unit for generating a Transport Block (TB) to be transmitted over the traffic channel by joining the transport data blocks;
a control unit for setting a LEN unit of a header of the TB to 1 byte when a TB size is less than or equal to a first predetermined threshold value, and setting the LEN unit of the header of the TB to 2 bytes when the TB size is greater than the first predetermined threshold value and is less than or equal to a second predetermined threshold value; and
a header insertion unit for inserting the header, the LEN unit of which has been set.
10. The apparatus as claimed in claim 9, wherein the control unit sets the LEN unit to 4 bytes when the TB size is greater than the second predetermined threshold value.
11. The apparatus as claimed in claim 10, wherein the data construction unit generates the TB with a size set in a LEN field included in the header of the TB by padding the TB with zeros (0) when the TB size is greater than the first predetermined threshold value and is different from the size set in the LEN field.
12. The apparatus as claimed in claim 10, further comprising a control channel transmission unit for transmitting size information of the TB over a control channel.
13. The apparatus as claimed in claim 9, wherein the data construction unit generates the TB with a size set in a LEN field included in the header of the TB by padding the TB with zeros (0) when the TB size is greater than the first predetermined threshold value and is different from the size set in the LEN field.
14. The apparatus as claimed in claim 9, further comprising a control channel transmission unit for transmitting size information of the TB over a control channel.
15. The apparatus as claimed in claim 9, further comprising a Hybrid Automatic Retransmission Request (HARQ) control unit for controlling HARQ of transmitted data.
16. An apparatus for interpreting a Media Access Control (MAC) packet header when a MAC packet is received in a mobile communication system where size information of a Transport Block (TB) transmitted over a traffic channel is provided over a control channel, the apparatus comprising:
a control channel processing unit for checking the size information of the TB, received over the control channel, to thereby detect a TB size, interpreting a LEN field of the MAC packet header at face value when the TB size is less than or equal to a first predetermined threshold value, and interpreting the LEN field of the MAC packet header as indicating a size that is twice as large as a LEN field value when the TB size is greater than the first predetermined threshold value and is equal to or less than a second predetermined threshold value;
a MAC packet header interpretation unit for interpreting the MAC packet header under the control of the control channel processing unit; and
a data separation unit for separately outputting transport data blocks of the MAC packet by using interpretation information forwarded from the MAC packet header interpretation unit.
17. The apparatus as claimed in claim 16, wherein the control channel processing unit controls the MAC packet header interpretation unit to interpret the LEN field of the MAC packet header as indicating a size that is four times as large as the LEN field value when the TB size is greater than the second predetermined threshold value.
18. The apparatus as claimed in claim 16, further comprising a Hybrid Automatic Retransmission Request (HARQ) control unit for detecting errors of the received MAC packet, and requesting HARQ when the errors are detected.
19. The apparatus as claimed in claim 16, further comprising at least a Radio Link Control (RLC) reception unit for processing the separated data blocks according to respective application data.
20. A method of setting a Media Access Control (MAC) packet header when a MAC packet is transmitted in a mobile communication system, the method comprising the steps of:
setting a length of a Length (LEN) field included in the MAC packet header according to a Transport Block (TB) size;
transmitting a control channel for informing a receiving side of the length of the LEN field included in the MAC packet header;
indicating the TB size by the set length of the LEN field to thereby configure the MAC packet; and
transmitting the MAC packet over a traffic channel.
21. The method as claimed in claim 20, further comprising informing the receiving side of a length of the MAC packet through the control channel.
22. The method as claimed in claim 20, further comprising generating a TB with a LEN field size by padding the TB with zeros (0) when the TB size is smaller than a LEN field value of the MAC packet header.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An image processing apparatus comprising:
an image forming unit configured to form an image;
an input unit configured to input, in response to detecting an abnormality in the formed image, a plurality of pieces of information about a feature of the formed image via an operation unit; and
a chart forming unit configured to form, by the image forming unit, a chart for determining an abnormality in an image, wherein the chart is decided according to a combination of the plurality of pieces of information input by the input unit via the operation unit.
2. The image processing apparatus according to claim 1, further comprising a determining unit configured to output a chart formed by the chart forming unit, and determine an abnormality in an image formed by the image forming unit, by using the output chart.
3. The image processing apparatus according to claim 1, further comprising a decision unit configured to decide an analysis process according to a combination of the plurality of pieces of information input by the input unit,
wherein the analysis process decided by the decision unit is executed on a chart formed by the chart forming unit.
4. The image processing apparatus according to claim 1, wherein a chart output from the chart forming unit is a chart selectively decided from a plurality of types of charts.
5. The image processing apparatus according to claim 3, wherein an analysis process decided by the decision unit is an analysis process selectively decided from a plurality of types of analysis processes.
6. The image processing apparatus according to claim 2, wherein the determining unit determines an abnormality in an image formed by the image forming unit, by using a feature amount acquired from a reading result of a chart output from the chart forming unit.
7. The image processing apparatus according to claim 2, further comprising a unit configured to determine whether a correction process for correcting an abnormality in an image that is determined by the determining unit is executable,
wherein in a case where it is determined that the correction process is executable, the correction process for correcting the abnormality of the image that is determined by the determining unit is executed.
8. The image processing apparatus according to claim 7, wherein in a case where the correction process is executable, a user is prompted to execute a correction function.
9. A method for controlling an image processing apparatus including an image forming unit configured to form an image, the method comprising:
inputting, in response to detecting an abnormality in the formed image, a plurality of pieces of information about a feature of the formed image via an operation unit; and
forming, by the image forming unit, a chart for determining an abnormality in an image, wherein the chart is decided according to a combination of the plurality of pieces of information input by the inputting via the operation unit.
10. A non-transitory computer readable storage medium storing a program for causing a computer to perform the method according to claim 9.