Author: claimsbot

1. A magnetic field generation apparatus, comprising:
two or more main magnetic pole portions configured to generate a main magnetic field;
one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field; and
a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions.
2. The magnetic field generation apparatus according to claim 1, wherein:
the two or more main magnetic pole portions each include a plurality of second divisional magnets obtained by a division; and
the yoke portion includes two or more second yokes opposing the plurality of second divisional magnets in correspondence with the two or more main magnetic pole portions.
3. The magnetic field generation apparatus according to claim 2, further comprising
a generation portion that is a generation position of the main magnetic field,
wherein:
the two or more main magnetic pole portions include a first main magnetic pole portion having an N pole on the generation portion side and a second main magnetic pole portion having an S pole on the generation portion side;
the one or more secondary magnetic pole portions include a first secondary magnetic pole portion that is provided in the vicinity of the second main magnetic pole portion between the first main magnetic pole portion and the second main magnetic pole portion and has an N pole on the generation portion side and a second secondary magnetic pole portion that is provided in the vicinity of the first main magnetic pole portion between the first main magnetic pole portion and the second main magnetic pole portion and has an S pole on the generation portion side;
the one or more first yokes are provided between the plurality of first divisional magnets and the generation portion; and
the two or more second yokes are provided between the plurality of second divisional magnets and the generation portion.
4. The magnetic field generation apparatus according to claim 3, wherein:
the generation portion includes a generation surface whose side where a magnetic field is generated is a front surface and the other side is a back surface;
the first main magnetic pole portion is arranged annularly on the back surface side of an edge portion of the generation surface;
the second main magnetic pole portion is arranged linearly on the back surface side of a center portion of the generation surface;
the first secondary magnetic pole portion is arranged annularly while surrounding the second main magnetic pole portion; and
the second secondary magnetic pole portion is arranged linearly on an inner side of the first main magnetic pole portion.
5. The magnetic field generation apparatus according to claim 1, further comprising
a holding portion configured to movably hold the plurality of first divisional magnets.
6. A sputtering apparatus, comprising:
a vacuum chamber;
a substrate support portion provided inside the vacuum chamber;
a target opposing the substrate support portion;
a magnetic field generation portion including
two or more main magnetic pole portions that generate a main magnetic field on a front surface of the target,
one or more secondary magnetic pole portions including a plurality of first divisional magnets obtained by a division, that generate a secondary magnetic field for adjusting the generated main magnetic field, and
a yoke portion including one or more first yokes opposing the plurality of first divisional magnets in correspondence with the one or more secondary magnetic pole portions; and

a potential application portion configured to apply a negative potential to the target.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A transistor comprising:
an InSb alloy film formed on an oxide film formed on a monocrystalline silicon substrate;
a gate dielectric layer formed on said InSb alloy film wherein said gate dielectric is a high dielectric constant film;
a metal gate electrode formed on said gate dielectric layer; and
a source region and a drain region formed on opposite sides of said gate electrode adjacent to said InSb alloy film and on said oxide film, said source and drain regions formed from a metal film.
2. The transistor of claim 1 wherein said metal film is selected from a material which can form a Schottky barrier with said InSb alloy.
3. The transistor of claim 1 wherein said metal film is selected from the group consisting of titanium nitride, tantalum nitride and hafnium nitride.
4. A transistor comprising:
an InSb alloy film formed on an oxide film formed on a monocrystalline silicon substrate;
a gate dielectric layer formed on said InSb alloy film wherein said gate dielectric is a high dielectric constant film;
a metal gate electrode formed on said gate dielectric layer; and
a source region and a drain region formed on opposite sides of said gate electrode adjacent to said InSb alloy film and on said oxide film, said source and drain region formed from a semiconductor film having a wide bandgap.
5. The transistor of claim 4 wherein said semiconductor film is selected from the group consisting of InP, GaSb, GaP, and GaAs.
6. The transistor of claim 4 wherein said gate dielectric is selected from the group consisting of PZT, BST, tantalum pentaoxide, hafnium oxide, zirconium oxide and a aluminum oxide.

1. A sensor comprising:
a fluidic conduit for conveying a fluid, wherein the fluidic conduit comprises a first region;
a first waveguide resonator, wherein the first waveguide resonator is optically resonant for a first spectral component when the fluid in the first region has a first refractive index, and wherein the first waveguide resonator is optically resonant for a second spectral component when the fluid in the first region has a second refractive index;
a first bus waveguide and a second bus waveguide, wherein the first waveguide resonator comprises the first bus waveguide and the second bus waveguide; and
an input port, wherein the input port, first bus waveguide and second bus waveguide are optically coupled;
wherein the first waveguide resonator is dimensioned and arranged to return the first spectral component to the input port when the fluid in the first region has the first index of refraction.
2. The sensor of claim 1 wherein the first waveguide resonator comprises a disc resonator.
3. The sensor of claim 1 wherein the first waveguide resonator comprises a ring resonator.
4. The sensor of claim 1 further comprising:
an output port;
wherein the input port distributes the first spectral component into a first light signal in the first bus waveguide and a second light signal in the second bus waveguide;
wherein the output port combines the first light signal and the second light signal; and
wherein the first waveguide resonator interposes the input port and the output port.
5. The sensor of claim 1 further comprising a second waveguide resonator, wherein the fluidic conduit comprises a second region and the second waveguide resonator and the fluidic conduit are optically coupled at the second region;
wherein the second waveguide resonator is optically resonant for the first spectral component when the fluid in the second region has the first refractive index, and wherein the second waveguide resonator is optically resonant for the second spectral component when the fluid in the second region has the second refractive index.
6. A sensor for detecting the presence of an analyte in a fluid comprising:
a fluidic conduit for providing the fluid at a first region;
a first waveguide resonator, wherein the first waveguide resonator and the fluid are optically coupled at the first region, and wherein the first waveguide resonator is dimensioned and arranged to receive a first light signal and provide a second light signal that is based on the first light signal, and further wherein the second light signal has a first intensity when the fluid is analyte-free and a second intensity when the fluid comprises the analyte;
a first bus waveguide and a second bus waveguide, wherein the first waveguide resonator comprises the first bus waveguide and the second bus waveguide; and
an input port, wherein the input port, first bus waveguide, and second bus waveguide are optically coupled, and wherein the first waveguide resonator is dimensioned and arranged to reflect a first spectral component to the input port when the fluid in the first region is analyte-free and a second spectral component to the input port when the fluid in the first region comprises the analyte.
7. The sensor of claim 6 wherein the first waveguide resonator comprises a closed-loop waveguide that comprises a waveguide core having an inner core of stoichiometric silicon oxide (SiO2), an outer core of stoichiometric silicon nitride (Si3N4), and a cladding that comprises the fluid in the first region.
8. The sensor of claim 6 further comprising:
a source for providing the first light signal to the first waveguide resonator; and
a photodetector, wherein the photodetector receives the second light signal from the first waveguide resonator, and wherein the photodetector provides a first electrical signal that is based on the second light signal.
9. The sensor of claim 6 further comprising:
a second waveguide resonator, wherein the second waveguide resonator comprises a second bus waveguide;
wherein the fluidic conduit comprises a second region, and wherein the second waveguide resonator and the fluid are optically coupled at the second region, and further wherein the second waveguide resonator is dimensioned and arranged to receive a third light signal and provide a fourth light signal that is based on the third light signal, and further wherein the fourth light signal has a third intensity when the fluid is analyte-free and a fourth intensity when the fluid comprises the analyte.
10. A method for detecting an analyte in a fluid comprising:
receiving a first light signal at a first waveguide resonator, wherein the first waveguide resonator and the fluid are optically coupled at a first region of a fluidic conduit;
receiving a second light signal from the first waveguide resonator, wherein the second light signal has a first intensity when the fluid in the first region is analyte-free and a second intensity when the fluid in the first region comprises an analyte;
adding a sample to the fluid at a first time, wherein the sample is added at a second region of the fluidic conduit, and wherein the sample comprises the analyte;
inducing a flow of the fluid from the second region to the first region; and
computing a first time differential between the first time and a second time, wherein the second time is based on a change in the intensity of the second signal.
11. The method of claim 10 further comprising providing the first waveguide resonator, wherein the first waveguide resonator is dimensioned and arranged to be optically resonant at a first wavelength when the fluid in the first region is analyte-free and optically resonant at a second wavelength when the fluid in the first region comprises an analyte.
12. The method of claim 11 further comprising:
computing a difference between the first wavelength and the second wavelength; and
computing a concentration of analyte in the fluid at the first region based on the difference between the first wavelength and the second wavelength.
13. The method of claim 10 further comprising determining a property of the analyte based on (1) the time differential and (2) the separation between the second region and the first region.
14. The method of claim 10 further comprising:
transmitting a third light signal to a second waveguide resonator, wherein the second waveguide resonator and the fluid are optically coupled at a third region of the fluidic conduit;
receiving a fourth light signal from the second waveguide resonator, wherein the fourth light signal has a third intensity when the fluid in the third region is analyte-free and a fourth intensity when the fluid in the third region comprises an analyte.
15. The method of claim 14 further comprising:
inducing a flow of the sample from the first region to the third region;
computing a second time differential between the second time and a third time, and wherein the third time is based on a change of the intensity of the fourth signal; and
determining a property of the analyte based on (1) the second time differential and (2) a separation between the first region and the third region.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of operation in a storage device that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device, the method comprising:
for a first word line of a respective block of the multiple blocks, the first word line having a first vertical position relative to the substrate of the storage device, performing operations including:
determining a first error correction coding (ECC) strength for the first word line according to the first vertical position of the first word line relative to the substrate of the storage device;
writing data to the first word line according to the first ECC strength;
in response to detecting a first trigger condition as to the first word line, adjusting the first ECC strength corresponding to the first word line; and
after adjusting the first ECC strength corresponding to the first word line, writing data to the first word line according to the adjusted first ECC strength.
2. The method of claim 1, further comprising:
after adjusting the first ECC strength corresponding to the first word line, detecting a second trigger condition as to the first word line, wherein the second trigger condition is different from the first trigger condition; and
in response to detecting the second trigger condition as to the first word line, adjusting the adjusted first ECC strength corresponding to the first word line.
3. The method of claim 2, further comprising:
after adjusting the adjusted first ECC strength corresponding to the first word line, detecting a predefined retirement condition as to the first word line; and
in response to detecting the predefined retirement condition as to the first word line, retiring the first word line, wherein subsequent data is not written to the first word line.
4. The method of claim 1, further comprising:
for a second word line of the first block of the multiple blocks, the second word line having a second vertical position, distinct from the first vertical position, relative to the substrate of the storage device, performing operations including:
determining a second error correction coding (ECC) strength for the second word line according to the second vertical position of the second word line relative to the substrate of the storage device, wherein the second ECC strength error is distinct from the first ECC strength; and
writing data to the second word line according to the second ECC strength.
5. The method of claim 4, wherein the second vertical position is closer to the substrate of the storage device than the first vertical position, and the second ECC encoding strength for the second word line is greater than the first ECC encoding strength for the first word line.
6. The method of claim 1, further comprising:
maintaining one or more status metrics for each of the plurality of word lines corresponding to the respective block.
7. The method of claim 6, further comprising:
in accordance with a determination that one of the one or more status metrics for the first word line satisfies one or more predefined criteria, detecting the first trigger condition as to the first word line.
8. The method of claim 1, further comprising:
receiving a command as to the first word line; and
in response to receiving the command, detecting the first trigger condition as to the first word line.
9. The method of claim 1, wherein the plurality of word lines include a set of word lines at each vertical position of X distinct vertical positions relative to the substrate of the storage device, wherein X is an integer greater than two.
10. A storage system, comprising:
a storage device that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device; and
a memory controller with one or more processors and memory storing one or more programs to be executed by the one or more processors, the one or more programs comprising instructions for:
for a first word line of a respective block of the multiple blocks, the first word line having a first vertical position relative to the substrate of the storage device, performing operations including:
determining a first error correction coding (ECC) strength for the first word line according to the first vertical position of the first word line relative to the substrate of the storage device;
writing data to the first word line according to the first ECC strength;
in response to detecting a first trigger condition as to the first word line, adjusting the first ECC strength corresponding to the first word line; and
after adjusting the first ECC strength corresponding to the first word line, writing data to the first word line according to the adjusted first ECC strength.
11. The storage system of claim 10, wherein the one or more programs further comprise instructions for:
after adjusting the first ECC strength corresponding to the first word line, detecting a second trigger condition as to the first word line, wherein the second trigger condition is different from the first trigger condition; and
in response to detecting the second trigger condition as to the first word line, adjusting the adjusted first ECC strength corresponding to the first word line.
12. The storage system of claim 11, wherein the one or more programs further comprise instructions for:
after adjusting the adjusted first ECC strength corresponding to the first word line, detecting a predefined retirement condition as to the first word line; and
in response to detecting the predefined retirement condition as to the first word line, retiring the first word line, wherein subsequent data is not written to the first word line.
13. The storage system of claim 10, wherein the one or more programs further comprise instructions for:
for a second word line of the first block of the multiple blocks, the second word line having a second vertical position, distinct from the first vertical position, relative to the substrate of the storage device, performing operations including:
determining a second error correction coding (ECC) strength for the second word line according to the second vertical position of the second word line relative to the substrate of the storage device, wherein the second ECC strength error is distinct from the first ECC strength; and
writing data to the second word line according to the second ECC strength.
14. The storage system of claim 13, wherein the second vertical position is closer to the substrate of the storage device than the first vertical position, and the second ECC encoding strength for the second word line is greater than the first ECC encoding strength for the first word line.
15. The storage system of claim 10, wherein the one or more programs further comprise instructions for maintaining one or more status metrics for each of the plurality of word lines corresponding to the respective block.
16. The storage system of claim 15, wherein the one or more programs further comprise instructions for, in accordance with a determination that one of the one or more status metrics for the first word line satisfies one or more predefined criteria, detecting the first trigger condition as to the first word line.
17. The storage system of claim 15, wherein the one or more programs further comprise instructions for:
receiving a command as to the first word line; and
in response to receiving the command, detecting the first trigger condition as to the first word line.
18. The storage system of claim 10, wherein the plurality of word lines include a set of word lines at each vertical position of X distinct vertical positions relative to the substrate of the storage device, wherein X is an integer greater than two.
19. A non-transitory computer readable storage medium storing one or more programs, the one or more programs comprising instructions, which, when executed by a memory controller with one or more processors, cause the memory controller to perform operations comprising:
for a first word line of a respective block of a storage device communicatively coupled with the memory controller that includes a three-dimensional array of memory cells, including multiple blocks of memory cells, each block including a plurality of word lines arranged in different vertical positions relative to a substrate of the storage device, the first word line having a first vertical position relative to the substrate of the storage device, performing operations including:
determining a first error correction coding (ECC) strength for the first word line according to the first vertical position of the first word line relative to the substrate of the storage device;
writing data to the first word line according to the first ECC strength;
in response to detecting a first trigger condition as to the first word line, adjusting the first ECC strength corresponding to the first word line; and
after adjusting the first ECC strength corresponding to the first word line, writing data to the first word line according to the adjusted first ECC strength.
20. The non-transitory computer readable storage medium of claim 19, wherein the one or more programs further comprise instructions for:
after adjusting the first ECC strength corresponding to the first word line, detecting a second trigger condition as to the first word line, wherein the second trigger condition is different from the first trigger condition; and
in response to detecting the second trigger condition as to the first word line, adjusting the adjusted first ECC strength corresponding to the first word line.