Author: claimsbot

1. A display device comprising:
a display cell;
a metal housing supporting the display cell from a rear side of the display device;
a light source attached to the housing, the light source being configured to emit light toward the display cell;
a reflecting member disposed between the display cell and the housing, the reflecting member being configured to reflect the light emitted from the light source toward the display cell; and
a power supply circuit board disposed between the reflecting member and the housing.
2. The display device according to claim 1, further comprising
an audio processing board for audio signal processing disposed between the reflecting member and the housing.
3. The display device according to claim 2, further comprising
a speaker electrically connected to the audio processing board, the speaker being disposed between the reflecting member and the housing.
4. The display device according to claim 1, further comprising
a video processing board for video signal processing disposed between the reflecting member and the housing.
5. The display device according to claim 4, further comprising
a relay board configured to relay video signals outputted from the video processing board to the display cell, the relay board being electrically connected to the video processing board and to the display cell, the relay board being disposed between the reflecting member and the housing.
6. The display device according to claim 1, further comprising
a plurality of studs disposed on the housing,
the power supply circuit board being fastened to the studs with a plurality of fastening members.
7. The display device according to claim 1, wherein
the power supply circuit board is attached to a lower part of the housing.
8. The display device according to claim 1, wherein
the power supply circuit board is fixedly attached to a rear face of the housing inside the housing.
9. The display device according to claim 1, wherein
the reflecting member is configured such that a distance between the reflecting member and a rear face of the housing increases as moving towards a lower end of the display device to define a housing space between the reflecting member and the housing, and
the power supply circuit board is disposed within the housing space inside the housing.
10. The display device according to claim 9, further comprising
a speaker at least partially disposed within the housing space inside the housing.
11. The display device according to claim 1, wherein
the reflecting member has a bottom portion that is disposed on a rear face of the housing, and
the power supply circuit board is disposed on a front side of the display device relative to the bottom portion of the reflecting member.
12. The display device according to claim 1, wherein
the housing has a wiring hole for wiring of the power supply circuit board.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising:
a first die having a surface that includes a passivation surface, a bond pad surface, and a conductive die receiving surface, wherein the conductive die receiving surface has an electrically conductive surface area that is larger than a footprint of a second die electrically coupled thereto.
2. The device of claim 1, wherein the electrically conductive surface area is at least 10,000 square microns.
3. The device of claim 1, where the first die is integrated into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.
4. The device of claim 1, wherein the electrically conductive surface area is configured to supply a system ground.
5. A system comprising:
a first die having a surface that includes a passivation surface, a bond pad surface, and a conductive stacked die receiving surface, wherein the conductive stacked die receiving surface has an electrically conductive surface area that is larger than a footprint of a second die electrically coupled thereto.
6. The system of claim 5, wherein the conductive stacked die receiving surface is an electrically conductive layer.
7. The system of claim 5, where the first die is integrated into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.
8. The system of claim 5, wherein the electrically conductive surface area is larger than the footprint of the second die when the second die is in direct contact with the conductive die receiving area.
9. The system of claim 5, wherein the conductive stacked die receiving surface has a substantially square shape with sides approximately 100 microns in length, and wherein each side of the second die is less than 100 microns in length.
10. A device comprising:
a first die having a surface that includes a passivation surface, a bond pad surface, and a conductive die receiving surface, wherein the conductive die receiving surface has an electrically conductive surface area that is larger than a footprint of a second die electrically coupled thereto.
11. The device of claim 10, further comprising a plurality of conductive die receiving surfaces each having a conductive area of at least 10,000 square microns.
12. The device of claim 10, wherein the conductive bond pad surface has an area less than 10,000 square microns.
13. The device of claim 10, wherein the first die is one of a complementary metal-on-silicon (CMOS) device, a Silicon on insulator (SOI) device, a bulk semiconductor device, a Silicon Germanium device, and a Gallium Arsenide device, and wherein the second die is a different type of device than the first die.
14. The device of claim 10, wherein the first die has a first yield rate and the second die has a second yield rate.
15. The device of claim 10, where the first die is integrated into another device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.
16. The device of claim 10, wherein the electrically conductive surface area is configured to supply a system ground.
17. The system of claim 10, wherein at least one wire bond electrically couples the bond pad surface to an electrical contact on a surface of the second die, wherein the surface of the second die opposes the conductive die receiving surface.
18. A package that includes a plurality of semiconductor devices, the package comprising:
a first die having a surface that includes a passivation surface, a bond pad surface, a first conductive die receiving surface, wherein the first conductive die receiving surface has an electrically conductive surface area that is larger than a footprint of a second die electrically coupled thereto, and a second conductive die receiving surface, wherein the second conductive die receiving surface has a second electrically conductive surface area that is larger than a footprint of a third die electrically coupled thereto.
19. The package of claim 18, wherein the first die includes power management circuitry and the second die includes data processing circuitry.
20. The package of claim 18, wherein the third die includes communication circuitry.
21. The package of claim 18, further comprising a fourth die coupled to the second die.
22. The package of claim 18, wherein the first die includes power management circuitry and the second die includes display circuitry.
23. The package of claim 18, wherein the package is integrated into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.
24. A system comprising:
a flip chip mounted device including a first die coupled to a second die; and
a third die coupled to the second die, the third die having a surface that includes a passivation surface, a bond pad surface, and a conductive die receiving surface, wherein the conductive die receiving surface has an electrically conductive surface area that is larger than a footprint of a fourth die.
25. The system of claim 24, wherein the second die has a surface that contacts at least a portion of a second conductive stacked die receiving area of the third die.
26. The system of claim 24, wherein the first flip chip mounted device is integrated into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location, data unit, and a computer.
27. A semiconductor device comprising:
first die means having a surface that includes a passivation surface, a bond pad surface, and a conductive die receiving surface, wherein the conductive die receiving surface has an electrically conductive surface area that is larger than a footprint of second die means electrically coupled thereto wherein the conductive die receiving surface is larger than the bond pad surface.
28. The device of claim 27, wherein the electrically conductive surface area is at least 10,000 square microns.
29. The device of claim 27, further comprising a second conductive die receiving surface having a second electrically conductive surface area of at least 10,000 square microns.
30. The device of claim 29, wherein the second electrically conductive surface area is larger than a footprint of third die means to be electrically coupled thereto.
31. The device of claim 30, wherein the third die means includes communication circuitry.
32. The device of claim 30, further comprising fourth die means coupled to the second die means.
33. The device of claim 27, wherein the second die means is electrically connected to the first die means.
34. The device of claim 27, wherein the first die means is one of a complementary metal-on-silicon (CMOS) device, a Silicon on insulator (SOI) device, a bulk semiconductor device, a Silicon Germanium device, and a Gallium Arsenide device, and wherein the second die means is a different type of device than the first die means.
35. The device of claim 34, wherein the first die means is a CMOS type of device and the second die means is a non-CMOS type of device.
36. The device of claim 27, wherein the first die means has a first yield rate and the second die means has a second yield rate.
37. The device of claim 27, wherein the first die means includes power management circuitry and the second die means includes data processing circuitry.
38. The device of claim 27, wherein the first die means includes power management circuitry and the second die means includes display circuitry.
39. The device of claim 27, wherein the device is integrated into a device selected from the group consisting of a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.

1. A radiation curable adhesive composition comprising
a) 30 to 90 parts by weight silicone polymer
b) 10 to 70 parts by weight silicate tackifier
c) 0.1 to 5 parts by weight halomethyl-1,3,5-triazine.
2. The radiation curable composition of claim 1 wherein the halomethyl-1,3,5-triazine is of the formula:
wherein
A is a mono-, di-, or trihalomethyl,
B is A, \u2014N(R1)2, \u2014OR1, R1, L-Rsensitizer or L-RPI, where R1 is alkyl or aryl;
Z is a conjugated chromophore, L-Rsensitizer or L-RPI,
L is a covalent bond or a (hetero)hydrocarbyl linking group;
where Rsensitizer is a sensitizer moiety capable of absorbing actinic radiation, and
RPI is a photoinitiator moiety that is capable of initiating free radical or ionic chain polymerization upon exposure to actinic radiation.
3. The radiation curable composition of claim 2 wherein A and B are trichloromethyl.
4. The radiation curable composition of claim 2 wherein Z is an aryl group.
5. The radiation curable composition of claim 4 wherein Z is
wherein
each R8 is independently H, alkyl, or alkoxy and 1-3 of said R8 groups are H.
6. The radiation curable composition of claim 2 wherein Z is
where each R9 is independently H, alkyl, or alkoxy.
7. The radiation curable composition of claim 2 wherein Z is L-Rsensitizer, wherein
L represents a (hetero)hydrocarbyl group linking the sensitizer moiety to the triazine nucleus, provided that the chromophore of said triazine nucleus is not attached to the chromophore of said Rsensitizer sensitizer moiety either directly by a covalent bond or by a conjugated linkage;
Rsensitizer represents a cyanine group, a carbocyanine group, a styryl group, an acridine group, a polycyclic aromatic hydrocarbon group, a polyarylamine group, or an amino-substituted chalcone group.
8. The radiation curable composition of claim 2 wherein Z is L-RPI, wherein
L represents a (hetero)hydrocarbyl group linking the sensitizer moiety to the triazine nucleus,
RPI represents a hydrogen-abstraction type photoinitiator group.
9. The radiation curable composition of claim 1 wherein the silicone is of the formula:
wherein
R3 is each independently an alkyl, aryl or alkoxy group;
R4 is H, an alkyl, aryl, alkoxy group, or a functional group including epoxy, amine, hydroxy groups, or \u2014Si(R3)2R5;
R5 is H, an alkyl, aryl, alkoxy group, or a functional group including epoxy, amine, hydroxy groups, or \u2014Si(R3)2R5;
R6 is H, an alkyl, aryl, alkoxy group, or a functional group including epoxy, amine, hydroxy groups, or \u2014Si(R3)2R5;
y is 0 to 20; preferably 1-75; and
x is at least 10.
10. The radiation curable composition of claim 1 wherein the silicone is a poly(dialkylsiloxane).
11. The radiation curable composition of claim 1 wherein the silicone is a hydroxy-terminated poly(dialkylsiloxane).
12. The radiation curable composition of claim 1 wherein the silicone is an amine-terminated poly(dialkylsiloxane).
13. The radiation curable composition of claim 1 wherein the silicone has a kinematic viscosity of 30,000 to 20\xd7106 centistokes.
14. The radiation curable composition of claim 1, wherein the halomethyl-1,3,5-triazine is of the formula:
wherein each R8 is independently hydrogen, alkyl, or alkoxy; and 1-3 of the R8 groups are hydrogen.
15. The radiation curable composition of claim 1, wherein the halomethyl-1,3,5-triazine is of the formula:
wherein each R9 is independently hydrogen, alkyl, or alkoxy.
16. The radiation curable composition of claim 7, wherein the halomethyl-1,3,5-triazine is of the formula:
wherein
A is a mono-, di-, or trihalomethyl,
B is A, \u2014N(R1)2, \u2014OR1, R1, L-Rsensitizer or L-RPI, where R1 is alkyl or aryl;
L is a covalent bond or a (hetero)hydrocarbyl linking group, and
Rsensitizer is a sensitizer group, and
L represents a hetero)hydrocarbyl group linking the sensitizer moiety to the triazine ring.
17. The radiation curable composition of claim 1 wherein the silicone is of the formula:
wherein
each R7 is independently an alkyl, alkoxy, aryl, or functional groups, with the proviso that at least one R7 group is a functional group, and z is at least 10.
18. The radiation curable composition of claim 17 wherein at least one of the R7 groups are selected from the group consisting of a hydride group, an amine group, a hydroxy group, and an epoxy group and the remaining R7 groups are non-functional groups.
19. The radiation curable composition of claim 1 wherein said silicone is a poly(dialkylsiloxane).
20. The radiation curable composition of claim 17 wherein the silicone is selected from:
21. A cured adhesive coating comprising the radiation curable composition of claim 1 on a substrate.
22. The cured adhesive coating of claim 21 having a modulus less than 3\xd7106 dynescm at a frequency of 1 Hz.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of molding a golf ball core, the method comprising the steps of:
providing a continuous motion conveyor system;
providing a top mold half and a bottom mold half, each integral with and in continual motion with the conveyor system;
heating each mold half in a separate conveyor oven;
providing a heated prep and placing the prep into the bottom mold half;
assembling the mold halves together with the prep to form a single cavity mold;
compressing the prep by utilizing spring force and retainer plates of the single cavity mold to form a spherical golf ball core;
curing the core in a conveyor convection oven; and
disassembling the mold and automatically removing the cured core.
2. The method according to claim 1, wherein the heating in the conveyor oven is to a temperature of 350\xb0 F.
3. The method according to claim 1, wherein the curing in the convection oven is to a temperature of about 350\xb0 F.
4. The method according to claim 1, wherein the spring force compression in each single cell cavity mold is about 384 pounds.
5. The method according to claim 1, wherein the conveyor moves at a speed of about 200 cavity molds per minute.
6. The method according to claim 1, wherein the prep is prepared by mixing a thermoset polybutadiene, a trans-polyisoprene and a modified, non-ionic polyolefin compatible with the thermoset rubber materials.
7. The method according to claim 6, wherein the non-ionic polyolefin is a copolymer ethylene and an alkyl acrylate.
8. A method of using a single cavity mold to mold a golf ball core, the method comprising the steps of:
providing a continuous motion conveyor system;
providing the single cavity mold having a top mold half and a bottom mold half, each integral with and in continual motion with the conveyor system;
heating each mold half in a separate conveyor oven;
providing a heated prep and placing the prep into the bottom mold half;
assembling the mold halves together to form a single cavity mold containing the prep;
compressing the prep by utilizing spring force and retainer plates of the single cavity mold to form a spherical golf ball core;
curing the core in a conveyor convection oven; and
disassembling the mold and automatically removing the cured core.
9. The method according to claim 8, wherein the heating in the conveyor oven is to a temperature of 350\xb0 F.
10. The method according to claim 8, wherein the curing in the convection oven is to a temperature of about 350\xb0 F.
11. The method according to claim 8, wherein the spring force compression in each single cell cavity mold is about 384 pounds.