1460734537-7fcb625d-c19a-4459-9856-0c547ef24b9a

1. A method of providing a magnetic resonance spectral image (MRSI), comprising:
a) applying a magnetic resonance imaging excitation;
b) acquiring data, comprising:
applying an oscillating gradient in a first dimension, and
applying blips in at least a second dimension in a pseudo-random order to acquire pseudo-random temporally undersampled spectral data in at least two planes; and

c) using the pseudo-random order to reconstruct a magnetic resonance spectral image in at least two dimensions.
2. The method, as recited in claim 1, wherein the magnetic resonance spectral image is in three dimensions.
3. The method, as recited in claim 2, wherein the acquiring data uses flyback readouts.
4. The method, as recited in claim 3, wherein the applying pseudo-random blips applies blips in a third dimension to acquire temporally undersampled spectral data in at least four planes.
5. The method, as recited in claim 4, wherein the magnetic resonance spectral image in at least two dimensions is a hyperpolarized image.
6. The method of claim 5, wherein the magnetic resonance spectral image in at least two dimensions is a 13C 3D hyperpolarized image.
7. The method, as recited in claim 6, wherein sampling time is reduced by a factor of at least 2.
8. The method, as recited in claim 7, wherein the acquiring data uses a spin-echo sequence.
9. The method of claim 1 where the reconstruction uses the equation Minimize \u2225W g\u22251 s.t. \u2225Fkg\u2212y\u22252<\u03b5.
10. The method, as recited in claim 1, wherein the acquiring data uses flyback readouts.
11. The method, as recited in claim 1, wherein the applying pseudo-random blips applies blips in a third dimension to acquire temporally undersampled spectral data in at least four planes.
12. The method, as recited in claim 1, wherein the magnetic resonance spectral image in at least two dimensions is a hyperpolarized image.
13. The method of claim 1, wherein the magnetic resonance spectral image in at least two dimensions is a 13C 3D hyperpolarized image.
14. The method, as recited in claim 1, wherein sampling time is reduced by a factor of at least 2.
15. The method, as recited in claim 1, wherein the acquiring data uses a spin-echo sequence.
16. The method, as recited in claim 1, further comprising displaying the reconstructed image.
17. An apparatus for providing a magnetic resonance spectral imaging (MRSI), comprising:
a magnetic resonance imaging excitation and detection system; and
a controller electrically connected to the magnetic resonance imaging excitation and detection system, comprising:
a display;
at least one processor; and
computer readable media, comprising:
computer readable code for applying a magnetic resonance imaging excitation;
computer readable code for acquiring data, comprising:
computer readable code for applying an oscillating gradient in a first dimension, and
computer readable code for applying blips in at least a second dimension in a pseudo-random order to acquire pseudo-random temporally undersampled spectral data in at least two planes;

computer readable code for using the pseudo-random order to reconstruct a magnetic resonance spectral image in at least two dimensions; and
computer readable code for displaying the image on the display.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An information processing apparatus comprising:
a display configured to display a list of images representing contents; and
an input module configured to accept an operation for a display area where the display displays the list of images,
wherein the display comprises:
a first controller configured to update a display state of the list of images to collect a plurality of images of the contents comprising an identical attribute into a group image if the input module accepts a first operation for positions on the display area where images of contents comprising the identical attribute are displayed side-by-side, the group image allowing a user to identify that the contents comprising the identical attribute are grouped; and
a second controller configured to update the display state of the list of images to unfold the plurality of images of the contents collected into the group image and comprising the identical attribute if the input module accepts a second operation for a position on the display area where the group image is displayed.
2. The apparatus of claim 1, wherein the first controller is configured to decide a display position of the group image on the display area by evaluating the display state of the list of images after the plurality of images of the contents comprising the identical attribute are collected into the group image.
3. The apparatus of claim 2, wherein:
the list of images is scrollable in an arrangement direction of the images so that a first number of images are displayed on the display area; and
the first controller is configured to decide the display position of the group image so as not to form blank space at a first end portion on the display area in a state where an image is scrolled from a second end side of the display area.
4. The apparatus of claim 2, wherein the first controller is configured to decide the display position of the group image so as not to form blank space between a start image and a second end of the display area or between a last image and a first end of the display area.
5. The apparatus of claim 4, wherein the first controller is configured to decide the display position of the group image so as not to form blank space between the start image and the second end of the display area when a number of images after the plurality of images of the contents collected into the group image and comprising the identical attribute is less than the number of images that are allowed to be displayed on the display area.
6. The apparatus of claim 1, wherein:
the contents comprise e-books; and
the first controller and the second controller are configured to determine that e-books comprising identical title information in metadata of the e-books are the contents comprising the identical attribute.
7. The apparatus of claim 6, wherein the group image comprises an image representing a state where the e-books comprising the identical title information are folded in an order of dates of issue to display an e-book comprising a latest date of issue information in the metadata or an e-book comprising an oldest date of issue information at a top position, a cover of the e-book comprising the latest date of issue information or the e-book comprising the oldest date of issue information displayed.
8. The apparatus of claim 7, wherein the group image is selected from an image representing a folded state in descending order of date of issue information and an image representing a folded state in ascending order of date of issue information based on an order of arrangement when the e-books comprising the identical title information are unfolded and displayed in a list.
9. The apparatus of claim 1, wherein the display further comprises a resume module configured to display the list of images so that an image of a content most recently used during a previous active period is displayed at a first position on the display area at a power ON timing.
10. The apparatus of claim 1, wherein:
the input module comprises a touch panel on a display surface of a display device;
the first operation comprises a pinch-in operation for bringing two contact points closer to each other on the touch panel; and
the second operation comprises a pinch-out operation for separating two contact points away from each other on the touch panel.
11. A method of controlling display for an information processing apparatus, the method comprising:
displaying a list of images representing contents;
accepting an operation for a display area where the list of images is displayed;
updating a display state of the list of images to collect a plurality of images of the contents comprising an identical attribute into a group image when a first operation for positions on the display area where images of contents comprising the identical attribute are displayed side-by-side is accepted, the group image allowing a user to identify that the contents comprising the identical attribute are grouped; and
updating the display state of the list of images to unfold the plurality of images of the contents collected into the group image and comprising the identical attribute if a second operation for a position on the display area where the group image is displayed is accepted.
12. A computer-readable, non-transitory storage medium having stored thereon a computer program executable by a computer, the computer program controlling the computer to function as:
a display configured to display a list of images representing contents; and
an input module configured to accept an operation for a display area where the display displays the list of images,
wherein the display comprises:
a first controller configured to update a display state of the list of images to collect a plurality of images of the contents comprising an identical attribute into a group image when the input module accepts a first operation for positions on the display area where images of contents comprising the identical attribute are displayed side-by-side, the group image allowing a user to identify that the contents comprising the identical attribute are grouped; and
a second controller configured to update the display state of the list of images to unfold the plurality of images of the contents collected into the group image and comprising the identical attribute if the input module accepts a second operation for a position on the display area where the group image is displayed.

1460734530-bc65ac6b-6f0f-43c3-96a5-2cecbb94faeb

1. A wafer box conveyer comprising:
a chassis comprising a frame and a plurality of wheels mounted under the frame;
a transverse moving mechanism, movably connected to the frame;
a longitudinal moving mechanism, movably connected to the transverse moving mechanism, wherein a moving direction of the longitudinal moving mechanism is perpendicular to that of the transverse moving mechanism;
a loading mechanism comprising at least one tray for a wafer box; and
a shock reduction mechanism disposed between the at least one tray and the frame for absorbing a load of the tray.
2. The wafer box conveyer of claim 1, further comprising a positioning mechanism wherein the positioning mechanism comprises a base, a pedal operator, a clipping block and a link, the base is fixed to a front side of the frame, and the clipping block is in the internal part of base and connects the pedal operator through the link.
3. The wafer box conveyer of claim 1, wherein the frame comprises at least one post, at least one horizontal rod and at least one crossed rod, each of the horizontal rods is connected between every two adjacent posts, and the crossed rods are crosswise located between two opposite rods.
4. The wafer box conveyer of claim 3, wherein the wheels are separately mounted on ends of the posts.
5. The wafer box conveyer of claim 4, wherein each the post is provided with at least one set of grips, each set of grips 13 is on the different side of the frame.
6. The wafer box conveyer of claim 1, wherein the transverse moving mechanism comprises at least one pair of first rails and at least one pair of first guiding seats slidably connected to the at least one pair of first rails.
7. The wafer box conveyer of claim 6, wherein the transverse moving mechanism comprises a pair of vertical plates and a moving seat, the vertical plates are fixed to the frame for being mounted by the at least one pair of first rails, the moving seat connects the at least one pair of first guiding seat to allow the moving seat to horizontally move on the frame.
8. The wafer box conveyer of claim 7, wherein the longitudinal moving mechanism comprises a pair of second rails fixed on the moving seat and a second guiding seat slidably connected to the second rails.
9. The wafer box conveyer of claim 8, wherein the longitudinal moving mechanism comprises an arm assembly and the arm assembly is fixed on the second guiding seat to move vertically.
10. The wafer box conveyer of claim 9, wherein the arm assembly comprises a connecting rod and a pair of arms separately mounted at two ends of the connecting rod, and the connecting rod is fixed at the second guiding seat.
11. The wafer box conveyer of claim 8, further comprising an elevator, wherein the elevator comprises a rotating rod, a cam, and a passive element, the rotating rod is pivotally connected on the transverse moving mechanism, the cam is connected to the rotating rod, the cam is formed with an arcked trough, two ends of the passive element are fixed to the second guiding seat and a protrusion respectively, and the protrusion is inserted in and confined to the arcked trough.
12. The wafer box conveyer of claim 11, wherein the elevator further comprises a pneumatic cylinder and a controller, one end of the pneumatic cylinder is fixed to the moving seat 24 and the other end is connected to the second guiding seat, and the controller is mounted on the rotating rod for controlling the pneumatic cylinder.
13. The wafer box conveyer of claim 11, further comprising a locking mechanism, wherein the locking mechanism comprises a stem, a cord and a stopper, the stem is fixed to the rotating rod, the cord connects the stem and stopper, and the stopper is equipped corresponding to the at least one pair of the first rails for limiting the moving seat.
14. The wafer box conveyer of claim 1, wherein the shock reduction mechanism comprises at least one supporting plate and shock absorbers, the at least one supporting plate is disposed between the horizontal rods and vertical plates, and the shock absorbers are fixed on the at least one supporting plates and correspond to the at least one tray.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising:
a substrate;
a semiconductor multi-layered structure formed on the substrate, the multi-layered structure comprising an emitter layer, a base layer and a collector layer composed of a group III-V n-type compound semiconductor, the base layer lying between the emitter layer and the collector layer;
a quantum dot barrier layer lying between the emitter layer and the base layer;
a collector electrode, a base electrode and an emitter electrode respectively connected to the collector layer, base layer and emitter layer;
wherein the quantum dot barrier layer comprising a plurality of quantum dots and first and second barrier layers sandwiching the quantum dots from the emitter layer side and the base layer side, respectively, and the first and second barrier layers being composed of a semiconductor having a band gap greater than that of the semiconductor composing the quantum dots;
each of the quantum dots having a convex portion that is convex to the base layer; and
a base layer side interface in the second barrier layer, a collector layer side interface in the base layer, and an emitter layer side interface in the base layer each having curvatures that are convex to the collector layer so as to correspond to the convex portions of the quantum dots.
2. A semiconductor device according to claim 1, wherein the quantum dot is formed in a cone-like shape that is convex to the base layer.
3. A semiconductor device according to claim 2, wherein the outer diameter of the bottom surface of each quantum dot is not less than 2 nm and not more than 30 nm, and the height of the quantum dot is not less than 2 nm and not more than 10 nm.
4. A semiconductor device according to claim 1, wherein the thickness of the quantum dot barrier layer is not less than 1.5 nm and not more than 10 nm.
5. A semiconductor device according to claim 1, wherein the emitter layer, base layer and collector layer are layered in this order on the substrate.
6. A semiconductor device according to claim 1, wherein the distance h1 from a flat portion of the base layer side interface to the top of the curvatures in the second barrier layer, and the distance h2 from a flat portion of the collector layer side interface to the top of the curvature in the base layer satisfy the formula {fraction (15)}\u2266h2h1\u22661.
7. A semiconductor device according to claim 1, wherein the in-plane density of quantum dots is not less than 1010cm2 and not more than 1012cm2.
8. A semiconductor device according to claim 1, wherein the base electrode is formed on the base layer, which is exposed by removing a portion of the collector layer, and
a high-resistance region is formed between the base layer and the emitter layer at the portion corresponding to the base electrode.
9. A method for fabricating a semiconductor device comprising the steps of:
an emitter layer formation step for forming an emitter layer composed of a group III-V n-type compound semiconductor on a substrate;
a step for forming a first barrier layer on the emitter layer;
a quantum dot formation step for forming a plurality of quantum dots on the first barrier layer, each quantum dot having a convex portion with an upward convex orientation on the upper surface of the quantum dot;
a barrier layer formation step for forming a second barrier layer over the quantum dots, the second barrier layer covering the quantum dots and having curvatures with an upward convex orientation on the upper surface of the second barrier layer so as to correspond to the shape of the convex portions of the quantum dots;
a base layer formation step for forming a base layer composed of a group III-V n-type compound semiconductor on the second barrier layer, the base layer having curvatures with an upward convex orientation on upper surface of the base layer so as to correspond to the shape of the convex portions of the quantum dots;
a collector layer formation step for forming a collector layer composed of a group III-V n-type compound semiconductor on the base layer; and
an electrode formation step for forming an emitter electrode, a base electrode and a collector electrode connected to the emitter layer, the base layer and the collector layer, respectively.
10. A method for fabricating a semiconductor device according to claim 9, wherein the quantum dots are formed in an S-K mode.
11. A method for fabricating a semiconductor device according to claim 10, wherein the quantum dots are formed by irradiation with a molecular beam.
12. A method for fabricating a semiconductor device according to claim 9, which further comprises, prior to the electrode formation step:
a step for exposing a portion of the base layer by removing the collector layer above the base layer; and
a step for forming a high-resistance region between the exposed portion of the base layer and the emitter layer by implanting ions into the exposed base layer.
13. A method for fabricating a semiconductor device according to claim 9, which further comprises, prior to the electrode formation step:
a step for forming a stepped shape between the emitter layer and the base layer, by removing the base layer and the collector layer above the emitter layer to expose a portion of the emitter layer and removing the collector layer above the base layer in the portion adjacent to the exposed portion of the emitter layer to expose a portion of the base layer; and
a step for oxidizing a portion of the exposed semiconductor layers in the stepped shape section by supplying water vapor.
14. A method for fabricating a semiconductor device according to claim 13, wherein the first and the second barrier layers contain Al, and these barrier layers are oxidized by the water vapor.
15. A method for fabricating a semiconductor device according to claim 9, wherein the quantum dots are formed into a cone-like shape with their tips convex to the base layer.
16. A method for fabricating a semiconductor device according to claim 15, wherein the outer diameter of the bottom surface of each quantum dot is not less than 2 nm and not more than 30 nm, and the height of each quantum dot is not less than 2 nm and not more than 10 nm.
17. A method for fabricating a semiconductor device according to claim 9, wherein the distance h1 from a flat portion of the base layer side interface to the top of the curvatures in the second barrier layer, and the distance h2 from a flat portion of the collector layer side interface to the top of the curvatures in the base layer satisfy the formula {fraction (15)}\u2266h2h1\u22661.
18. A method for fabricating a semiconductor device according to claim 9, wherein the in-plane density of the quantum dots is not less than 1010cm2 and not more than 1012cm2.