What is claimed as new and desired to be protected by Letters Patent is set forth in the appended claims:
1. A device for producing a mixture from chemically reactive plastic components and permeated with reinforcement fibers, comprising:
a mixing head having a mixing chamber receiving chemically reactive plastic components for producing a plastic mixture;
an outlet tube disposed downstream of the mixing chamber for receiving the plastic mixture;
a cleaning piston reversibly displaceable in the outlet tube and having a central channel;
a conveying unit for feeding a strand of natural fibers to the cutting arrangement; and
a cutting arrangement including an outer tube defining an axis and terminating in an outlet port, an inner guide tube receiving the strand of natural fibers and surrounded by the outer tube at formation of a gas supply channel of ring-shaped cross section for conduction of compressed gas, the inner tube and the outer tube so configured as to form a ring nozzle, with the outer tube extending beyond a lower end of the inner tube for guiding the strand of natural fiber downstream of the ring nozzle, and a cutting mechanism having at least one knife element extending transversely to the axis of the outer tube and in shearing contact with an end surface of the outer tube pass when passing by the outlet port, and an exit tube arranged downstream of the knife element in communication with the central channel of the cleaning piston.
2. The device of claim 1, wherein the mixing head includes a housing and a tube which is securely fixed to the housing, said tube traversing the central channel of the cleaning piston and communicating with the exit tube.
3. The device of claim 2, wherein the tube is securely fixed to the exit tube.
4. The device of claim 1, wherein the knife element includes a knife disk which is driven about an axis in parallel relationship to the axis of the outer tube and has at least one kidney-shaped through-opening having at least one rounded area forming a cutting edge.
5. The device of claim 4, wherein the cutting arrangement includes a cutting drum and a retainer ring for replaceably securing the knife element to the cutting drum, said cutting drum having a central opening expanding conically upwards to the through-opening of the knife disk and tapering downwards to an opening terminating in the exit tube.
6. The device of claim 5, wherein the cutting arrangement has a housing and a drive mechanism supported by the housing and including a toothed belt in driving relationship with the cutting drum, said cutting drum supported in the housing which has a cutout for passage of the tooth belt.
7. In combination:
a cutting arrangement for guiding a fiber strand and cutting pieces from the fiber strand;
a mixing head receiving the fiber pieces from the cutting arrangement and combining the fiber pieces with a mixture from chemically reactive plastic components,
wherein the cutting arrangement includes an outer tube defining an axis and terminating in an outlet port, an inner guide tube receiving the fiber strand and surrounded by the outer tube at formation of a gas supply channel of ring-shaped cross section for conduction of compressed gas, the inner tube and the outer tube so configured as to form a ring nozzle, with the outer tube extending beyond a lower end of the inner tube for guiding the fiber strand downstream of the ring nozzle, and a cutting mechanism having at least one knife element extending transversely to the axis of the outer tube and in shearing contact with an end surface of the outer tube pass when passing by the outlet port.
8. The combination of claim 7, wherein the mixing head includes a housing and a tube which is securely fixed to the housing, said tube received in the cleaning piston and communicating with the exit tube.
9. The device of claim 8, wherein the tube of the mixing head is securely fixed to the exit tube.
10. The device of claim 1, wherein the knife element includes a knife disk which is driven about an axis in parallel relationship to the axis of the outer tube and has at least one kidney-shaped through-opening having at least one rounded area forming a cutting edge.
11. The device of claim 10, wherein the cutting arrangement includes a cutting drum and a retainer ring for replaceably securing the knife element to the cutting drum, said cutting drum having a central opening expanding conically upwards to the through-opening of the knife disk and tapering downwards to an opening which terminates in the exit tube.
12. The device of claim 11, wherein the cutting arrangement has a housing and a drive mechanism supported by the housing and including a toothed belt in driving relationship with the cutting drum, said cutting drum supported in the housing which has a cutout for passage of the tooth belt.
13. A cutting device for attachment to a mixing head of a polyurethane apparatus, said cutting device comprising:
an inner tube and an outer tube defining an axis;
means for conducting a stream of compressed gas through a channel between the inner and outer tubes and into an interior of the outer tube thereby applying a vacuum in the inner tube for drawing a fiber strand and aligning the fiber strand in a straight configuration; and
a cutting mechanism having at least one knife element extending adjacent a lower end of the outer tube transversely to the axis so as to be in shearing contact with an end surface of the outer tube as the knife element passes by.
14. The cutting device of claim 13, wherein the knife element includes a knife disk which rotates about an axis in parallel relationship to the outer tube and has at least one kidney-shaped through-opening having at least one rounded area forming a cutting edge for cutting the fiber strand as it passes the knife disk.
15. The cutting device of claim 14, wherein the cutting arrangement includes a cutting drum and a retainer ring for replaceably securing the knife element to the cutting drum, said cutting drum having a central opening expanding conically upwards to the through-opening of the knife disk and tapering downwards to an opening terminating in the exit tube.
16. The cutting device of claim 15, wherein the cutting arrangement has a housing and a drive mechanism supported by the housing and including a toothed belt in driving relationship with the cutting drum, said cutting drum supported in the housing which has a cutout for passage of the tooth belt.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A memory cell transistor of a DRAM device, comprising:
a gate stack pattern formed on a semiconductor substrate;
a DC node and a BC node formed substantially under lateral sides of the gate stack pattern in the semiconductor substrate, the DC node and the BC node being electrically connected to a bit line and a storage electrode of a capacitor, respectively;
a first sourcedrain junction region formed under the DC node and a second sourcedrain junction region formed under the BC node,
wherein the first sourcedrain junction region has a profile which is different from that of the second sourcedrain junction region, and wherein the first sourcedrain junction region and second sourcedrain junction region are formed with a same first impurity, and wherein the sourcedrain junction regions comprise sourcedrain ion injection regions and plug ion injection regions formed under the DC node and the BC node; and
a compensation ion injection region formed in the plug ion injection region under the DC node, wherein the compensation ion injection region is formed with a second impurity.
2. The memory cell transistor of claim 1, wherein a depth of the second sourcedrain junction region electrically connected to the BC node is deeper than a depth of the first sourcedrain junction region electrically connected to the DC node.
3. The memory cell transistor of claim 1, wherein the first impurity is phosphorous.
4. The memory cell transistor of claim 1, further comprising spacers on both lateral sides of the gate stack pattern.
5. The memory cell transistor of claim 1, wherein the second impurity is boron.
6. A memory cell transistor of a DRAM device, comprising:
a gate stack pattern formed on a semiconductor substrate;
a DC node and a BC node formed substantially under lateral sides of the gate stack pattern and substantially in a surface of the semiconductor substrate, the DC node and the BC node being electrically connected to a bit line and a storage electrode of a capacitor, respectively;
sourcedrain junction regions comprising sourcedrain ion injection regions and plug ion injection regions formed under the DC node and the BC node, the plug ion injection regions being formed deeper than the sourcedrain ion injection regions,
wherein profiles of the sourcedrain junction regions are different, and wherein the ion injection regions and the plug ion injection regions are formed with a same first impurity; and
a compensation ion injection region formed in the plug ion injection region under the DC node, wherein the compensation ion injection region is formed using a second impurity.
7. The memory cell transistor of claim 6, wherein a depth of the sourcedrain junction region electrically connected to the BC node is deeper than a depth of the sourcedrain junction region electrically connected to the DC node.
8. The memory cell transistor of claim 6, wherein the first impurity is phosphorous.
9. The memory cell transistor of claim 6, further comprising spacers on both lateral sides of the gate stack pattern.
10. The memory cell transistor of claim 6, wherein the plug ion injection region formed under the BC node is formed deeper than the plug ion injection region formed under the DC node.
11. The memory cell transistor of claim 6, wherein the second impurity is boron.
12. The memory cell transistor of claim 6, wherein the first impurity is phosphorous and the second impurity is boron.
13. A memory cell transistor of a DRAM device, comprising:
a gate stack pattern formed on a semiconductor substrate;
a DC node and a BC node formed substantially under lateral sides of the gate stack pattern in the semiconductor substrate, the DC node and the BC node being electrically connected to a bit line and a storage electrode of a capacitor, respectively;
a first sourcedrain junction region formed under the DC node and a second sourcedrain junction region formed under the BC node, wherein the sourcedrain junction regions comprise sourcedrain ion injection regions and plug ion injection regions, wherein the first and second sourcedrain junction regions are formed of a first impurity; and
a compensation ion injection region formed in the plug ion injection region under the DC node, wherein the compensation ion injection region is formed of a second impurity.
14. The memory cell transistor of claim 13, wherein the first impurity is phosphorus and the second impurity is boron.
15. The memory cell transistor of claim 13, wherein the plug ion injection region formed under the BC node is formed deeper than the plug ion injection region formed under the DC node.
16. The memory cell transistor of claim 13, wherein a depth of the second sourcedrain junction region is deeper than a depth of the first sourcedrain junction region.