Author: claimsbot

1. A coil for magnetic stimulation of a target area, the coil positionable on a body part, the coil comprising:
a first base portion comprising at least two substantially parallel spaced apart first base portion members having a first base portion spacing distance between said at least two base portion members, said first base portion members for providing electrical current flow in a direction tangential to the target area, said first base portion positioned at a first level with respect to the target area;
a second base portion comprising at least two substantially parallel spaced apart second base portion members having a second base portion spacing distance between said at least two base portion members, said second base portion members for providing electrical current flow in a direction tangential to the target area, said base portion positioned substantially in the first level with respect to the target area, said second base portion positioned at a distance from said first base portion; and
a contacting return portion for carrying returning current in a direction opposite the direction of current flow of said first base portion and said second base portion, said contacting return portion in electrical communication with said first and second base portion members and positioned substantially in the first level and spaced at a distance from the target area, wherein said first level is configured for placement on a skull, said contacting return portion further comprising at least two substantially parallel spaced apart return portion members having a return portion spacing distance between said at least two return portion members.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A controller configured to control the programming of a data word into a programmable memory device, wherein the programmable memory device comprises a pin for a pulse width control signal configured to digitally control a default programming time interval for writing the data word into the programmable memory device and a pin for a data signal indicative of the data word which is to be programmed; wherein the controller is configured to
set digital control signals for programming the data word into the programmable memory device, wherein the digital control signals comprise the data signal and the pulse width control signal;
subsequent to setting the digital control signals, increase a device supply voltage for the programmable memory device from a default operation level to a programming level;
subsequent to a programming time interval, decrease the device supply voltage from the programming level to the default operation level; and
subsequent to decreasing the device supply voltage, reset the pulse width control signal.
2. The controller of claim 1, wherein the controller is further configured to
subsequent to decreasing the device supply voltage, modify the one or more digital control signals.
3. The controller of claim 2, wherein the controller is configured to maintain the digital control signals unchanged during the programming time interval.
4. The controller of claim 2, wherein the controller is configured to select the programming time interval, such that an electrical power provided to the programmable memory device within the programming time interval is sufficiently high for programming the code word.
5. The controller of claim 2, wherein the controller is configured to
select the programming time interval to be longer than the default programming time interval;
set the pulse width control signal prior to increasing the device supply voltage.
6. The controller of claim 1, wherein the digital control signals comprise
a data signal indicative of the data word which is to be programmed; and
an address signal indicative of a location within the programmable memory device which is to be programmed.
7. An integrated circuit comprising
a programmable memory device;
a controller confiqured to control the programming of a data word into the programming memory device, wherein the controller is configured to;
set one or more digital control signals for programming the data word into the programmable memory device;
subsequent to setting the one or more digital control signals, increase a device supply voltage for the programmable memory device from a default operation level to a programming level; and

a device supply voltage provisioning circuit configured to provide a device supply voltage for the programmable memory device at different voltage levels, wherein
the device supply voltage provisioning circuit comprises a voltage regulator configured to derive the device supply voltage from an integrated circuit (IC) supply voltage subject to a reference voltage; and
the controller is configured to set the reference voltage to the programming level

wherein the voltage regulator
comprises an operational amplifier configured to compare at an input of the operational amplifier a feedback voltage which is indicative of the device supply voltage to the reference voltage; and
comprises a pass device controlled by an output of the operational amplifier, wherein the pass device is arranged to couple the IC supply voltage to a device supply voltage pin of the programmable memory device via a variable on-resistance of the pass device wherein the on-resistance of the pass device is controlled by the output of the operational amplifier.
8. The integrated circuit of claim 7, wherein the voltage regulator
is a capacitor-less voltage regulator.
9. The integrated circuit of claim 8, wherein
the voltage regulator comprises an interruption switch configured to decouple the IC supply voltage from the device supply voltage pin; and
the controller is configured to control the interruption switch to decouple the IC supply voltage from the device supply voltage pin to decrease the device supply voltage.
10. The integrated circuit of claim 7, wherein
the device supply voltage provisioning circuit comprises default operation voltage provisioning means configured to provide a device supply voltage at a default operation level; and
the default operation voltage provisioning means are configured to derive the device supply voltage at the default operation level from a logic voltage regulator of the IC.
11. An integrated circuit comprising
a programmable memory device;
a controller configured to control the programming of a data word into a programmable memory device, wherein the controller is configured to
set one or more digital control signals for programming the data word into the programmable memory device;
subsequent to setting the one or more digital control signals, increase a device supply voltage for the programmable memory device from a default operation level to a programming level; and

a device supply voltage provisioning circuit configured to provide a device supply voltage for the programmable memory device at different voltage levels;
wherein
the device supply voltage provisioning circuit comprises a voltage regulator configured to derive the device supply voltage from an integrated circuit (IC) supply voltage, subject to a reference voltage;
the controller is configured to set the reference voltage to the programming level;
the device supply voltage provisioning circuit comprises default operation voltage provisioning means configured to provide a device supply voltage at a default operation level;
the default operation voltage provisioning means are configured to derive the device supply voltage at the default operation level from a logic voltage regulator of the IC;

the default operation voltage provisioning means comprise a resistor for coupling a device supply voltage pin of the programmable memory device with the logic voltage regulator;
the default operation voltage provisioning means comprise a bypass switch in parallel to the resistor, configured to bypass the resistor; and
the controller is configured to control the bypass switch to bypass the resistor for providing the device supply voltage at default operation level.
12. The integrated circuit of claim 10, wherein the controller is configured to control the device supply voltage provisioning circuit such that
a device supply voltage at the default operation level is generated using the default operation voltage provisioning means; and
a device supply voltage at the programming level is generated using the voltage regulator.
13. A method for controlling programming of a data word into a programmable memory device, wherein the method comprises
setting one or more digital control signals for programming the data word into the programmable memory device, wherein the one or more digital control signals comprise a pulse width control signal to digitally control a default programming time interval for programming the data word, wherein the programming time interval is selected such that an electrical power provided to the programmable memory device within the programming time interval is sufficiently high for programming the data word;
subsequent to setting the one or more digital control signals, increasing a device supply voltage for the programmable memory device from a default operation level to a programming level;
subsequent to a programming time interval, decreasing the device supply voltage from the programming level to the default operation level; and
subsequent to decreasing the device supply voltage, modifying the one or more digital control signals.
14. The method for controlling programming of a data word into a programmable memory device of claim 13, wherein the controller
selects the programming time interval to be longer than the default programming time interval;
sets the pulse width control signal prior to increasing the device supply voltage.
15. The method for controlling programming of a data word into a programmable memory device of claim 13, wherein the digital control signals comprise
a data signal indicative of the code word which is to be programmed; and
an address signal indicative of a location within the programmable memory device which is to be programmed.

We claim:

1. A delivery comprising sheet brakes and sheet supports constructed of modules including respectively identical carrier modules and braking modules with operationally revolving braking elements, said braking modules being selectively connectable to said carrier modules, and support modules selectively connectable to said carrier modules.
2. The delivery according to claim 1, including a guide common to said carrier modules.
3. The delivery according to claim 2, including servodrives for moving said carrier modules along said guide.
4. The delivery according to claim 1, including a drive shaft common to said sheet brakes.
5. The delivery according to claim 4, wherein a respective sheet brake includes a gear mechanism for operatively connecting said braking element to said drive shaft, said gear mechanism being constructed so that it can slide in longitudinal direction of said drive shaft.
6. The delivery according to claim 5, wherein said gear mechanism is integrated into said braking module.
7. The delivery according to claim 5, including a coupling for disengaging the operative connection between said drive shaft and said braking element.
8. The delivery according to claim 7, wherein said coupling is constructed as a claw coupling, and has axially sprung claws.
9. The delivery according to claim 7, wherein said gear mechanism is integrated into said carrier module.
10. The delivery according to claim 7, including a guide common to said carrier modules, one of said carrier modules being separably composed of a basic module movable along said common guide and a gear mechanism module comprising said gear mechanism, one module of said braking modules and said support modules being selectively detachably connectable to said gear mechanism module.
11. The delivery according to claim 1, including lockable plug-in connections for assembling respective modules for forming one of said sheet brakes and said sheet supports.
12. The delivery according to claim 1, including a first suction duct provided in said braking module, and a second suction duct provided in a module for carrying said braking module, said second suction duct being connectable to a suction line, and being closable, said second suction duct communicating with said first suction duct, in a completed state of said sheet brake.
13. The delivery according to claim 12, including a suction line detachably connected to said suction duct and to a machine-side blind plug, to which said suction line is pluggable after the connection thereof to said suction duct has been detached.
14. The delivery according to claim 1, including a latch bringable into and out of engagement with said drive shaft and, when engaged therewith, securing it against axial displacement, an end of said drive shaft being exposable when said latch is disengaged from said drive shaft.
15. The delivery according to claim 1, wherein one of said support modules comprises a tail wheel device.
16. The delivery according to claim 1, wherein at least one of said supporting modules serves for applying blast air locally to an underside of a respective sheet.
17. A sheet-processing machine having a delivery comprising sheet brakes and sheet supports constructed of modules including respectively identical carrier modules and braking modules with operationally revolving braking elements, said braking modules being selectively connectable to said carrier modules, and support modules selectively connectable to said carrier modules.
18. A rotary printing machine having a delivery comprising sheet brakes and sheet supports constructed of modules including respectively identical carrier modules and braking modules with operationally revolving braking elements, said braking modules being selectively connectable to said carrier modules, and support modules selectively connectable to said carrier modules.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A growth confinement structure for forming crystalline germanium material comprising:
a substrate;
a lower growth confinement layer selected from the group consisting of silicon dioxide, silicon nitride, aluminum oxide, and hafnium oxide, disposed on a surface of the substrate;
an upper growth confinement layer selected from the group consisting of silicon dioxide, silicon nitride, aluminum oxide, and hafnium oxide, disposed above and vertically separated from the lower growth confinement layer;
a planar lateral growth channel, between the upper and lower growth confinement layers, having a channel height that is the vertical separation between the upper and lower growth confinement layers along the lateral growth channel;
a germanium material growth seed of amorphous silicon that is not from the substrate, the growth seed being disposed at a site adjacent to the lateral growth channel and not present on the upper and lower growth confinement layers in the lateral growth channel, wherein the upper growth confinement layer and the lower growth confinement layer each prohibits crystalline germanium material nucleation on the upper and lower growth confinement layers during exposure to GeH4 gas, for crystalline germanium material growth initiation in the lateral growth channel only at the growth seed site;
crystalline germanium material filling the lateral growth channel; and
a growth channel outlet for providing formed crystalline germanium material from the lateral growth channel.
2. The growth confinement structure of claim 1 further comprising crystalline germanium material outside of the growth channel and adjacent to the growth channel outlet on the lower growth confinement layer.
3. The growth confinement structure of claim 1 further comprising first and second growth confinement sidewalls, of a sidewall material selected from the group consisting of silicon dioxide, silicon nitride, aluminum oxide, and hafnium oxide, and each of the first and second growth confinement sidewalls extending from the growth seed to the growth channel outlet.
4. The growth confinement structure of claim 1 wherein the channel height is equal to a distance between first and second growth confinement sidewalls, of a sidewall material selected from the group consisting of silicon dioxide, silicon nitride, aluminum oxide, and hafnium oxide, and each of the first and second growth confinement sidewalls extending from the growth seed to the growth channel outlet.
5. The growth confinement structure of claim 1 wherein the growth channel includes at least one corner at a point along a path of the lateral growth channel.
6. The growth confinement structure of claim 1 wherein the substrate comprises a material selected from the group consisting of silicon, quartz, and alumina.
7. The growth confinement structure of claim 1 wherein the channel height is substantially equal to a height of the growth seed.
8. The growth confinement structure of claim 1 wherein the crystalline germanium material filling the lateral growth channel comprises germanium doped with a dopant selected from the group consisting of carbon and tin.
9. The growth confinement structure of claim 1 wherein the crystalline germanium material filling the lateral growth channel comprises single germanium crystals having a (110) orientation.
10. The growth confinement structure of claim 1 wherein the crystalline germanium at the growth channel outlet is monocrystalline germanium.