1. An optical glass, which comprises, denoted as weight percent,
2 to 37 percent of SiO2,
0 to 25 percent of B2O3,
0 to 10 percent of GeO2,
18 to 55 percent of a combined content of Li2O, Na2O, K2O, CaO, SrO, and BaO, 33.78 to 55 percent of a combined content of TiO2, Nb2O5, and WO3, and
0 to 15 percent of La2O3;
wherein the weight ratio of SiO2 content relative to a combined content of SiO2 and B2O3 (SiO2(SiO2+B2O3) ranges from 0.1 to 1;
a weight ratio of the Li2O content to a combined content of Li2O, Na2O, K2O, CaO, SrO, and BaO (Li2O(Li2O+Na2O+K2O+CaO+SrO+BaO) ranges from 0 to 0.4; and
a weight ratio of TiO2 content relative to a combined content of TiO2, Nb2O5, and WO3 (TiO2(TiO2+Nb2O5+WO3) ranges from 0.35 to 1;
a specific gravity being equal to or less than 4.3; and
which has a refractive index nd ranging from 1.87939 to 1.990 and an Abb\xe9 number \u03bdd ranging from 21 to 29.
2. The optical glass according to claim 1, wherein a difference (Tx\u2212Tg) between a peak crystallization temperature Tx and a glass transition temperature Tg is equal to or greater than 120\xb0 C.
3. The optical glass according to claim 1, which has a liquidus temperature LT of equal to or lower than 1,300\xb0 C.
4. The optical glass according to claim 1, which has an average coefficient of linear expansion \u03b1 at 100 to 300\xb0 C. of equal to or greater than 85\xd710\u22127\xb0 C.
5. The optical glass according to claim 1, wherein the content of La2O3 ranges from 0 to 11 weight percent.
6. An optical element, which is comprised of the optical glass according to claim 1.
7. A bonded optical element, wherein an optical element comprised of the optical glass according to claim 1 is bonded to an optical element comprised of fluorophosphate glass.
8. A press-molding glass material, which is comprised of the optical glass according to claim 1.
9. A method of manufacturing an optical element, which comprises:
preparing an optical element blank by press molding the press-molding glass material according to claim 8 in a heat-softened state; and
grinding and polishing the optical element blank that has been prepared to provide an optical element.
10. An optical glass, which comprises, denoted as weight percent,
2 to 37 percent of SiO2,
0 to 25 percent of B2O3,
0 to 10 percent of GeO2,
18 to 55 percent of a combined content of Li2O, Na2O, K2O, CaO, SrO, and BaO, and
27 to 55 percent of a combined content of TiO2, Nb2O5, and WO3; as well as comprises no La2O3;
wherein the weight ratio of SiO2 content relative to a combined content of SiO2 and B2O3 (SiO2(SiO2+B2O3) ranges from 0.1 to 1;
a weight ratio of the Li2O content to a combined content of Li2O, Na2O, K2O, CaO, SrO, and BaO (Li2O(Li2O+Na2O+K2O+CaO+SrO+BaO) ranges from 0 to 0.4; and
a weight ratio of TiO2 content relative to a combined content of TiO2, Nb2O5, and WO3 (TiO2(TiO2+Nb2O5+WO3) ranges from 0.35 to 1; and
which has a refractive index nd ranging from 1.860 to 1.990 and an Abb\xe9 number \u03bdd ranging from 21 to 29.
11. An optical element, which is comprised of the optical glass according to claim 10.
12. A bonded optical element, wherein an optical element comprised of the optical glass according to claim 10 is bonded to an optical element comprised of fluorophosphate glass.
13. A press-molding glass material, which is comprised of the optical glass according to claim 10.
14. A method of manufacturing an optical element, which comprises:
preparing an optical element blank by press molding the press-molding glass material according to claim 13 in a heat-softened state; and
grinding and polishing the optical element blank that has been prepared to provide an optical element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor package structure, comprising:
a substrate having an accommodating portion, a through hole, a first surface and a second surface opposite to the first surface, wherein the accommodating portion and the through hole are extended to the second surface from the first surface;
a sensing chip disposed in the accommodating portion, wherein the sensing chip has an active surface and a chip surface opposite to the active surface and comprises a pad located on the active surface;
a first patterned conductive layer formed on the first surface;
a hole conductive layer formed on the through hole and connected to the first patterned conductive layer;
a second patterned conductive layer formed on the second surface and connected to the hole conductive layer;
an electrical connection portion used for electrically connecting the pad and the first patterned conductive layer;
a die attach film (DAF) adhered to the chip surface; and
a dielectric layer covering the first patterned conductive layer, the sensing chip, the electrical connection portion, the second patterned conductive layer and the die attach film, wherein the dielectric layer has a first aperture and a second aperture, the first aperture exposes a part of the active surface, and the second aperture exposes a part of the second patterned conductive layer.
2. The semiconductor package structure according to claim 1, wherein the electrical connection portion is extended from the first patterned conductive layer.
3. The semiconductor package structure according to claim 1, wherein the electrical connection portion is integrated with the first patterned conductive layer.
4. The semiconductor package structure according to claim 1, wherein the pad and the first patterned conductive layer are separated by a distance, the electrical connection portion is a wire, the dielectric layer covers a part of the first patterned conductive layer, and the semiconductor package structure further comprises:
an encapsulant enveloping the wire;
wherein, one end of the wire is connected to the pad, and the other end of the wire is connected to the other part of the first patterned conductive layer.
5. The semiconductor package structure according to claim 1, wherein a lateral side of the sensing chip and an inner side-wall of the accommodating portion are separated by a gap, and the semiconductor package structure further comprises:
an adhesive glue disposed in p the gap, wherein the adhesive glue connects the lateral side of the sensing chip to the inner side-wall of the accommodating portion for fixing the sensing chip on the accommodating portion.
6. The semiconductor package structure according to claim 5, wherein the adhesive glue is a thermal cure resin.
7. The semiconductor package structure according to claim 5, wherein the adhesive glue is a copper-containing adhesive glue.
8. The semiconductor package structure according to claim 1, wherein the pad has a pad surface, and the pad surface, the active surface and the first surface substantially face the same direction;
wherein, the pad surface and the first surface are substantially aligned.
9. The semiconductor package structure according to claim 1, wherein the pad is protruded from the active surface, the pad has a pad surface, and the pad surface, the active surface and the first surface substantially face the same direction;
wherein, the pad surface is protruded from the first surface.
10. The semiconductor package structure according to claim 1, further comprising:
an organic solderability preservative (OSP) film formed on the second patterned conductive layer.
11. The semiconductor package structure according to claim 1, wherein the substrate is a cupper-clad laminate.
12. A package method of a semiconductor package structure, wherein the method comprises:
providing a substrate, wherein the substrate has a first surface and a second surface;
forming an accommodating portion and a through hole on the substrate, wherein the accommodating portion and the through hole are extended to the second surface from the first surface;
disposing a sensing chip in the accommodating portion, wherein the sensing chip has an active surface and a chip surface opposite to the active surface, the sensing chip comprises a pad located on the active surface, and a die attach film is disposed on the chip surface;
forming a first patterned conductive layer on the first surface;
forming a hole conductive layer in the through hole, wherein the through hole is connected to the first patterned conductive layer;
forming a second patterned conductive layer on the second surface, wherein the second patterned conductive layer is connected to the hole conductive layer; and
forming an electrical connection portion between the pad and the first patterned conductive layer for electrically connecting the pad to the first patterned conductive layer;
forming a dielectric layer on the first patterned conductive layer, the sensing chip, the electrical connection portion, and the second patterned conductive layer, wherein the step of forming the dielectric layer comprises forming the dielectric layer on the die attach film; and
forming a first aperture and a second aperture on the dielectric layer, wherein the first aperture exposes a part of the active surface, and the second aperture exposes a part of the second patterned conductive layer.
13. The package method according to claim 12, wherein the electrical connection portion is extended from the first patterned conductive layer, and the step of forming the first patterned conductive layer and the step of forming the electrical connection portion are performed at the same time.
14. The package method according to claim 12, wherein the electrical connection portion is a wire,
the step of forming the dielectric layer on the first patterned conductive layer is forming the dielectric layer on a part of the first patterned conductive layer,
the step of forming the electrical connection portion comprises:
electrically connecting the other part of the first patterned conductive layer and the pad by the wire; and the package method further comprises:
enveloping the wire by an encapsulant.
15. The package method according to claim 12, wherein the accommodating portion exposes an opening on the first surface, and the step of disposing the sensing chip in the accommodating portion comprises:
disposing an adhesion film on the first surface, so that the adhesion film covers the aperture;
adhering the sensing chip on an adhesion surface of the adhesion film, wherein the active surface of the sensing chip faces the adhesion surface;
disposing an adhesive glue between a lateral side of the sensing chip and an inner side-wall of the accommodating portion for fixing the sensing chip on the accommodating portion; and
removing the adhesion film.