1.-4. (canceled)
5. A gusseted bag comprised of a flexible, multi-layer film having an inner layer that is fusible, the gusseted bag comprising:
a bottom end that is closed before or after filling with bulk material;
a top end with a closure device;
bag walls forming a front wall of the gusseted bag and a rear wall of the gusseted bag;
gussets inserted at opposed sides between the bag walls and extending from the bottom end to the top end and ending at a spacing below upper edges of the bag walls so that a top area free of the gussets is provided;
wherein the bag walls are fused with the gussets and, in the top area free of the gussets, the bag walls are mutually fused with one another along edges of the bag walls;
wherein upper end areas of the gussets have top edges and are folded over toward one of the bag walls at a folding line and form folded-over end areas, wherein the folding line is oriented in a direction toward the bottom end at a slant inwardly and downwardly;
wherein the folded-over end areas have an inner side that is fused by a first welding seam to an inner side of a neighboring gusset half of the gussets, respectively;
wherein the folded-over end areas have an outer side that is areally fused by a second welding seam to a neighboring bag wall, respectively;
wherein an area of the neighboring gusset half adjoining the folded-over end areas is areally fused by a third welding seam to a neighboring bag wall, respectively;
wherein the first, second, and third welding seams form a fused connection that includes the top edges so that the top edges are closed.
6. The gusseted bag according to claim 5, wherein the end areas are folded over toward the rear wall.
7. The gusseted bag according to claim 5, wherein the closure device is a reclosable closure device that extends at a spacing above the folded-over end areas across an entire bag width of the gusseted bag.
8. The gusseted bag according to claim 7, wherein the reclosable closure device is a three-layer closure strip having outer layers fused to an inner side of the bag walls and having a central layer that is separable by cohesion fracture in two partial layers, wherein the two partial layers, when being placed against one another, are returned into a state of adhesive connection.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device with a silicon semiconductor body (1) having a first surface (2) and a second surface (3) facing away from the first, provided with a field effect transistor (4) comprising a source (5), a drain (6), an interposed channel (7), and a first gate (8) arranged opposite the channel (7) on the first surface (2), said gate (8) having a dimension (9) along said first surface (2), and provided with a second gate (10) provided on the second surface (3) opposite the first gate (8), characterized in that the semiconductor body (1) has a recess (11) with a depth (12) in the second surface (3), which recess (11) is concentric with a substantially perpendicular projection of the first gate (8), and in which recess (11) the second gate (10) is present.
2. A semiconductor device as claimed in claim 1, characterized in that the second gate (10) has a dimension (13) along the second surface (3), averaged over the depth (12) of the recess (11), which corresponds substantially to at most the dimension (9) of the first gate (8).
3. A semiconductor device as claimed in claim 1 or 2, characterized in that the recess (11) is substantially entirely filled by the second gate (10).
4. A semiconductor device as claimed in claim 1 or 2, characterized in that a gate dielectric (14) is present between the first gate (8) and the first surface (2).
5. A semiconductor device as claimed in claim 1 or 2, characterized in that a gate dielectric (15) is present between the second gate (10) and the second surface (3).
6. A semiconductor device as claimed in claim 1, characterized in that a substrate (16) lies against the first gate (8) and the first surface (2) of the semiconductor body (1).
7. A method of manufacturing a semiconductor device with a silicon semiconductor body (1) having a first surface (2) and a second surface (3) facing away from the first, and provided with a field effect transistor (4) comprising a source (5), a drain (6), an interposed channel (7), and a first gate (8) provided on the first surface (3) opposite the channel (7), and a second gate (10) of a second gate material provided on the second surface (3) opposite the channel, characterized in that the semiconductor body (1) with the first gate (8) on the first surface (2) and a silicon oxide layer (17) on the second surface (3) is implanted with dopant ions in a direction substantially perpendicular to the first surface (2) and through the first surface (2) so as to form an implanted region (18) behind the first gate (8) in the silicon semiconductor body (1) and an implanted zone (19) in the silicon oxide layer (17) around said region (18), whereupon silicon oxide is formed by dopant-enhanced oxidation in the implanted region (18) and the silicon oxide in said region and the silicon oxide layer (17) are removed, such that a recess (11) is created in the second surface (3) at the area of said region (18), and the second gate material (20) is provided in the recess (11), from which material the second gate (10) is formed.
8. A method as claimed in claim 7, characterized in that a gate dielectric (15) is provided in the recess (11) before the second gate material (20) is provided.