Author: claimsbot

1. A method for telescoping a main boom including a telescopic boom, which is guyed via a spatial boom guying, the method comprising:
limiting the main boom in its lateral deflection when erected by tensioning the spatial guying during telescoping operation to ensure a sufficient guying force into the telescopic boom.
2. The method according to claim 1, wherein the main boom is guyed during the telescoping operation, and where in a retracted condition the telescopic boom is guyed by the spatial guying, and wherein during the telescoping operation a dimension of the spatial guying is varied synchronously with the telescoping of the boom.
3. The method according to claim 2, wherein the synchronization between the telescoping operation and the variation of the spatial guying is executed by a crane controller.
4. The method according to claim 3, wherein the crane controller detects a current length of the telescopic boom and from the same determines a necessary dimensional change in rope length of the guying.
5. The method according to claim 4, wherein the crane controller actuates a drive of the spatial guying andor actuates the telescoping drive in dependence on the determined dimensional change.
6. The method according to claim 1, wherein the telescopic guying is slightly pretensioned in a retracted condition and during the telescoping operation a guy length is varied such that with a laterally unloaded boom only small forces act on a push-out mechanism.
7. The method according to claim 1, wherein a deviation of the boom is monitored during the telescoping operation and a guying force introduced into the telescopic boom is adapted, wherein the guying force is non-linearly increased with increasing deviation of the telescopic boom.
8. The method according to claim 7, wherein an actual dimension of the guying is monitored by the crane controller.
9. A crane, comprising:
a telescopable main boom;
a spatial guying; and
a crane controller including non-transitory chip medium with instructions which, when executed by a processor, determine a necessary guy dimension of the spatial guying in dependence on a current main boom length during telescoping operation for ensuring a sufficient guying force into the telescopic boom, and adjust an actuator in response to the determined necessary guy dimension.
10. The crane according to claim 9, wherein the actuator adjusts the spatial guying in dependence on the determined guy dimension.
11. The crane according to claim 9, wherein the crane includes a monitor detecting the main boom length, wherein measurement data is transmitted to the crane controller via a bus system andor a wireless system.
12. The crane according to claim 9, wherein the crane includes a monitor detecting a length of the guy stranding, wherein measurement data is transmitted to the crane controller via a bus system andor a wireless system.
13. The crane according to claim 9, wherein the spatial guying for the main boom includes two guy supports mounted on a telescopic section of the main boom with one guy winch each; and on a tip of the main boom, deflection pulleys are arranged for a guy rope.
14. The crane according to claim 13, wherein a plurality of winch drives are provided per guy winch.
15. The crane according to claim 14, wherein at least one guy winch includes a mechanical lock.
16. A method for telescoping a boom that is guyed via a spatial boom guying, the method comprising:
controlling lateral deflection of the main boom during telescoping operation by adjusting a length of the spatial guying in response to boom length, while maintaining at least some tension in the spatial guying.
17. The method according to claim 16, wherein the telescoping operation occurs while the boom is positioned at its steepest condition, and wherein the adjusting includes adjusting the length of the spatial guying in response to the boom length, and in response to a lateral deviation of the boom from a luffing plane.
18. The method according to claim 16, wherein a tension force in the spatial guying is increased with respect to increasing lateral deviation.
19. The method of claim 16, wherein the spatial boom guying includes at least two guys forming a Y-shaped guying system, with each of the at least two guys including individual drives that are controlled responsive to a comparison of respective lengths of the at least two guys.
20. The method of claim 16, further comprising monitoring safety of the crane in response to the length of the spatial guying.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A drug delivery device for administering a low dose of a medicament, comprising:
a housing;
a drug reservoir disposed in said housing containing a medicament;
a needle connected to said drug reservoir; and
a pressure applying member movably connected to said housing and movable between first and second positions, said pressure applying member not applying pressure to said drug reservoir in said first position and applying pressure to said drug reservoir in said second position to dispense said medicament stored in said drug reservoir.
2. The drug delivery device according to claim 1, wherein
said drug reservoir has a volume of between 1 and 15 units inclusive.
3. The drug delivery device according to claim 1, wherein
said medicament is insulin.
4. The drug delivery device according to claim 1, wherein
said pressure applying member moves in a direction substantially perpendicular to a longitudinal axis of said needle.
5. The drug delivery device according to claim 1, wherein
said pressure applying member moves in a direction substantially parallel to a longitudinal axis of said needle.
6. The drug delivery device according to claim 1, wherein
a hinge connects said pressure applying member to said housing.
7. The drug delivery device according to claim 1, wherein
said pressure applying member comprises a plunger.
8. The drug delivery device according to claim 1, wherein
said pressure applying member includes first and second legs and said drug reservoir being disposed between said first and second legs.
9. The drug delivery device according to claim 1, wherein
a safety shield covers said needle.
10. The drug delivery device according to claim 9, wherein
a spring member is disposed between said safety shield and said housing such that said safety shield is movable between positions covering and exposing said needle.
11. The drug delivery device according to claim 1, wherein
a dose wheel including a plurality of said drug reservoirs and a plurality of said needles is rotatably disposed in said housing.
12. The drug delivery device according to claim 11, wherein
said dose wheel is replaceable with a new dose wheel.
13. The drug delivery device according to claim 12, wherein
said pressure applying member is actuated by a cam member.
14. A drug delivery device for administering a low dose of a medicament, comprising:
a rigid member;
a first flexible portion connected to said rigid member;
a drug reservoir containing a medicament disposed in said first flexible portion;
a second flexible portion connected to said rigid member; and
a needle connected to said drug reservoir,
wherein a first pressure is applied to said second flexible portion to create a vacuum before contacting said second flexible portion with a patient’s skin, and a second pressure is applied to said first flexible portion to dispense said medicament after contacting said second flexible portion with the patient’s skin and releasing the first pressure on said second flexible portion.
15. The drug delivery device according to claim 14, wherein
a projection is disposed within said second flexible portion and receives said needle.
16. The drug delivery device according to claim 15, wherein
a first end of said second flexible portion extends beyond a second end of said projection.
17. A method of administering a low dose of insulin, comprising the steps of:
penetrating an injection site with a needle of a drug delivery device pre-filled with a low dose of insulin; and
applying pressure to the pre-filled drug delivery device to administer the insulin dose to simulate a first-phase insulin response of a pancreas.
18. The method of administering a first-phase insulin dose according to claim 17, wherein
the administered first-phase insulin dose is between 1 and 15 units, inclusive.
19. The method of administering a first-phase insulin dose according to claim 17, wherein
the pressure is applied by a pressure applying member connected to the drug delivery device.
20. The method of administering a first-phase insulin dose according to claim 17, wherein
the first-phase insulin dose is administered no more than five minutes prior to a meal.

1. A level shift circuit comprising:
a CMOS inverter circuit that receives an input pulse signal having a crest value of a first potential;
a latch circuit that operates on a power supply of a second potential which is higher than the first potential, the latch circuit having one end thereof connected to an output end of the CMOS inverter circuit and outputting from the other end thereof an output pulse signal having a crest value of the second potential and a same phase as the input pulse signal; and
a power supply circuit that supplies a power supply of not less than the first potential and less than the second potential to the CMOS inverter circuit;
wherein the power supply circuit functions to limit the power supply when the input pulse signal assumes at least a ground level,
wherein the power supply circuit includes a reverse current blocking circuit that operates to block current from flowing from a power supply terminal of the CMOS inverter circuit to a power supply side of the CMOS inverter circuit when the input pulse signal assumes the ground level.
2. The level shift circuit according to claim 1, wherein
the reverse current blocking circuit comprises:
a blocking MOS transistor inserted between the power supply side of the CMOS inverter circuit and the power supply terminal of the CMOS inverter circuit and having a same conductivity type as an MOS transistor that is present on the power supply side of the CMOS inverter circuit; and
a blocking inverter circuit with an input end thereof connected to the output end of the latch circuit and an output end thereof connected to a gate of the blocking MOS transistor.
3. The level shift circuit according to claim 2, wherein
the level shift circuit comprises two resistance elements connected in series between the power supply of the second potential and the ground, and the power supply is effected to the CMOS inverter circuit from a connecting point between the two resistance elements through the blocking MOS transistor.
4. A level shift circuit comprising:
a CMOS inverter circuit that receives an input pulse signal having a crest value of a first potential;
a latch circuit that operates on a power supply of a second potential which is higher than the first potential, the latch circuit having one end thereof connected to an output end of the CMOS inverter circuit and outputting from the other end thereof an output pulse signal having a crest value of the second potential and a same phase as the input pulse signal; and
a power supply circuit that supplies a power supply of not less than the first potential and less than the second potential to the CMOS inverter circuit;
wherein the power supply circuit functions to limit the power supply when the input pulse signal assumes at least a ground level,
wherein the latch circuit comprises:
an output stage inverter circuit having an input end and an output end, the input end being the one end of the latch circuit and the output end being the other end of the latch circuit; and
a latch-stage MOS transistor with a source thereof connected to the power supply of the second potential, a drain thereof connected to the one end of the latch circuit, and a gate thereof connected to the other end of the latch circuit, the latch-stage MOS transistor having a same conductivity type as an MOS transistor that is present on a power supply side of the CMOS inverter circuit,
wherein
the latch circuit further comprises:
a through-current preventing MOS transistor with a gate thereof connected to an input end of the CMOS inverter circuit, a drain thereof connected to the one end of the latch circuit, and a source thereof connected to the drain of the latch-stage MOS transistor, the through-current preventing MOS transistor having a same conductivity type as the latch-stage MOS transistor; and
the drain of the latch-stage MOS transistor is connected to the source of the through-current preventing MOS transistor instead of being connected to the one end of the latch circuit.
5. A level shift circuit comprising:
a CMOS inverter circuit that receives an input pulse signal swinging between a first potential and a second potential;
a power supply circuit that is connected between a first power supply and a power supply terminal of the CMOS inverter circuit;
a latch circuit that operates on a second power supply of a third potential which is higher than the first potential, the latch circuit outputting an output pulse signal in response to an output signal of the CMOS inverter circuit, the output pulse signal having a same phase as the input pulse signal and swinging between the second potential and the third potential;
wherein a potential of the first power supply is lower than the third potential, the power supply circuit supplies the first power supply to the CMOS inverter circuit in response to the output pulse signal.
6. The level shift circuit according to claim 5, wherein the power supply circuit includes a first transistor connected between the first power supply and the power supply terminal of the CMOS inverter circuit, the first transistor becomes non-conductive when a potential of output pulse signal is the second potential.
7. The level shift circuit according to claim 5, wherein the latch circuit comprises:
an output stage inverter receiving the output signal of the CMOS inverter circuit and outputting the output pulse signal;
first and second transistor connected in series between the second power supply and an input terminal of the output stage inverter, the first transistor having a gate connected to an output terminal of the output stage inverter, the second transistor having a gate connected to an input terminal of the CMOS inverter circuit.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method to detect gases, liquids or particles, the method comprising:
providing a sensor, the sensor comprising
a substrate,
at least one recessed region on the substrate,
nanopillars defined in the at least one recessed region,
metallic bulbs on a top end of the nanopillars;

inserting the sensor in an environment; and
illuminating, by a laser, the metallic bulbs on the top end of the nanopillars, thereby detecting presence or absence of a target gas, liquid or particle.
2. The method of claim 1, wherein the sensor further comprises a functionalizing agent on the metallic bulbs on the top end of the nanopillars.
3. The method of claim 1, wherein the sensor further comprises a polymer layer on a top surface of the at least one recessed region in between the nanopillars.
4. The method of claim 1, wherein a distance between the metallic bulbs is between 5 and 50 nanometers.
5. The method of claim 1, wherein the substrate comprises mesas having a height higher than the at least one recessed region on the substrate, and a height of the nanopillars is equal or less than the height of the mesas.
6. The method of claim 1, wherein the at least one recessed region is an array of recessed regions.
7. The method of claim 1, wherein a distance between the metallic bulbs allows electrical insulation between the metallic bulbs.
8. The method of claim 1, wherein the substrate is silicon, the nanopillars are silicon dioxide and the metallic layer is gold.
9. The method of claim 1, further comprising choosing the metallic layer and a thickness of the metallic layer based on the target gas, liquid or particle.
10. The method of claim 9, wherein the substrate is silicon, the nanopillars are silicon dioxide and the metallic layer is gold, copper, aluminum, platinum, nickel or silver.
11. The method of claim 8, wherein the target gas, liquid or particle is hydrogen sulfide.
12. The method of claim 1, further comprising an optical fiber attached to one end of the at least one recessed region, wherein an opposite wall of the at least one recessed region comprises a metallic layer, thereby acting as a reflector for the optical fiber, the optical fiber being configured to shine a laser light on the metallic bulbs and collect a signal reflected from the metallic bulbs.
13. The method of claim 1, further comprising choosing a gap between the metallic bulbs based on a desired resonant wavelength.
14. The method of claim 13, wherein the desired resonant wavelength is 488, 514, 633, 790 or 1050 nm.
15. A method comprising:
providing a sensor, the sensor comprising
a substrate,
at least one recessed region on the substrate,
nanopillars defined in the at least one recessed region, the nanopillars having gaps between each other,
metallic bulbs on a top end of the nanopillars,
a microfluidic chamber around the at least one recessed region;

inserting a solution in the microfluidic chamber, the solution having a concentration of target molecules;
illuminating, by a laser, the metallic bulbs on the top end of the nanopillars;
concentrating, by the illuminating, the target molecules close to the gaps between the metallic bulbs;
removing part of the solution from the microfluidic chamber; and
turning off the laser, thereby allowing the target molecules to diffuse within a remaining part of the solution within the microfluidic chamber, and thereby increasing the concentration of target molecules.