1. A method of forming a bonded semiconductor structure, comprising:
providing a first semiconductor structure comprising at least one device structure;
bonding a second semiconductor structure to the first semiconductor structure at a temperature or temperatures below about 400\xb0 C.;
forming at least one through wafer interconnect through the second semiconductor structure and into the first semiconductor structure to the at least one device structure; and
bonding the second semiconductor structure on a side thereof opposite the first semiconductor structure to a third semiconductor structure.
2. The method of claim 1, wherein bonding the second semiconductor structure to the first semiconductor structure comprises:
bonding a relatively thicker semiconductor structure to the first semiconductor structure; and
thinning the relatively thicker semiconductor structure to form the second semiconductor structure, the second semiconductor structure comprising a relatively thinner portion of the relatively thicker semiconductor structure remaining bonded to the first semiconductor structure.
3. The method of claim 2, wherein thinning the relatively thicker semiconductor structure to form the second semiconductor structure comprises:
implanting ions into the relatively thicker semiconductor structure along an ion implant plane; and
fracturing the relatively thicker semiconductor structure along the ion implant plane.
4. The method of claim 3, wherein implanting ions into the relatively thicker semiconductor structure comprises implanting ions into the relatively thicker semiconductor structure prior to bonding the relatively thicker semiconductor structure to the first semiconductor structure.
5. The method of claim 3, wherein fracturing the relatively thicker semiconductor structure along the ion implant plane comprises fracturing the relatively thicker semiconductor structure along the ion implant plane after bonding the relatively thicker semiconductor structure to the first semiconductor structure.
6. The method of claim 5, wherein fracturing the relatively thicker semiconductor structure along the ion implant plane comprises heating the relatively thicker semiconductor structure to a temperature or temperatures below about 400\xb0 C. to cause the relatively thicker semiconductor structure to fracture along the ion implant plane.
7. The method of claim 1, further comprising selecting the second semiconductor structure to be at least substantially comprised of silicon.
8. The method of claim 7, further comprising selecting the second semiconductor structure to be at least substantially comprised of single crystal silicon.
9. The method of claim 1, further comprising forming the at least one through wafer interconnect through the second semiconductor structure and into the first semiconductor structure to the at least one device structure at a temperature or temperatures below about 400\xb0 C.
10. The method of claim 1, further comprising forming at least one heat management structure in the second semiconductor structure.
11. The method of claim 10, wherein forming at least one heat management structure comprises forming at least one dummy metal pad, electrically isolated from the at least one device structure in the first semiconductor structure.
12. The method of claim 10, further comprising tailoring a coefficient of thermal expansion of the second semiconductor structure by varying at least one of a size, a number, a composition, a location, and a shape of the at least one heat management structure.
13. The method of claim 12, further comprising tailoring the coefficient of thermal expansion of the second semiconductor structure such that a ratio of the coefficient of thermal expansion of the second semiconductor structure to a coefficient of thermal expansion of the first semiconductor structure is between 0.67 and 1.5.
14. The method of claim 13, further comprising tailoring the coefficient of thermal expansion of the second semiconductor structure such that the ratio is between 0.9 and 1.1.
15. The method of claim 14, further comprising tailoring the coefficient of thermal expansion of the second semiconductor structure to be at least substantially equal to a coefficient of thermal expansion of the first semiconductor structure.
16. The method of claim 1, further comprising bonding the second semiconductor structure to the third semiconductor structure at a temperature or temperatures below about 400\xb0 C.
17. The method of claim 1, further comprising forming additional device structures on the second semiconductor structure after bonding the second semiconductor structure to the first semiconductor structure and prior to bonding the second semiconductor structure to the third semiconductor structure.
18. A method of forming a bonded semiconductor structure, comprising:
providing a first semiconductor structure comprising at least one device structure;
implanting ions into a second semiconductor structure and forming an ion implant plane within the second semiconductor structure
bonding the second semiconductor structure to the first semiconductor structure;
fracturing the second semiconductor structure along the ion implant plane, a portion of the second semiconductor structure remaining bonded to the first semiconductor structure;
forming at least one through wafer interconnect through the portion of the second semiconductor structure remaining bonded to the first semiconductor structure, into the first semiconductor structure, and to the at least one device structure; and
bonding the second semiconductor structure on a side thereof opposite the first semiconductor structure to a third semiconductor structure.
19. The method of claim 18, further comprising bonding the second semiconductor structure to the first semiconductor structure at a temperature or temperatures below about 400\xb0 C.
20. The method of claim 18, wherein fracturing the second semiconductor structure along the ion implant plane comprises heating the second semiconductor structure to a temperature or temperatures below about 400\xb0 C. to cause the second semiconductor structure to fracture along the ion implant plane.
21. The method of claim 18, further comprising forming the at least one through wafer interconnect at a temperature or temperatures below about 400\xb0 C.
22. The method of claim 18, further comprising forming at least one heat management structure comprising a dummy metal structure in the second semiconductor structure.
23. The method of claim 18, further comprising bonding the second semiconductor structure to the third semiconductor structure at a temperature or temperatures below about 400\xb0 C.
24. The method of claim 18, further comprising forming additional device structures on the second semiconductor structure after bonding the second semiconductor structure to the first semiconductor structure and prior to bonding the second semiconductor structure to the third semiconductor structure.
25. The method of claim 24, further comprising forming the additional device structures on the second semiconductor structure without exposing the first semiconductor structure and the second semiconductor structure to any temperature over about 400\xb0 C.
26. The method of claim 18, further comprising selecting the second semiconductor structure to be at least substantially comprised of silicon.
27. The method of claim 26, further comprising selecting the second semiconductor structure to be at least substantially comprised of single crystal silicon.
28. A bonded semiconductor structure, comprising:
a first semiconductor structure comprising at least one device structure;
a second semiconductor structure bonded to the first semiconductor structure, the second semiconductor structure comprising a portion of a fractured relatively thicker semiconductor structure; and
at least one through wafer interconnect extending through the second semiconductor structure, at least partially through the first semiconductor structure, and to the at least one device structure.
29. The semiconductor structure of claim 28, further comprising at least one heat management structure in the second semiconductor structure.
30. The semiconductor structure of claim 28, further comprising a third semiconductor structure bonded to the second semiconductor structure on a side thereof opposite the first semiconductor structure.
31. The semiconductor structure of claim 28, wherein the second semiconductor structure has a coefficient of thermal expansion at least substantially equal to a coefficient of thermal expansion of the first semiconductor structure.
32. The semiconductor structure of claim 28, wherein the second semiconductor structure is at least substantially comprised of silicon.
33. The semiconductor structure of claim 32, wherein the second semiconductor structure is at least substantially comprised of single crystal silicon.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A pumpdown sub comprising:
a body having an end that selectively couples to a downhole tool which is inserted into a downhole tubular;
a valve member that is selectively changeable from an open configuration in which the valve member lies in a plane substantially parallel with an axis of the downhole tubular, to a closed configuration in which the valve member lies in a plane substantially perpendicular with the axis of the downhole tubular and in which the outer diameter of the valve member is in close contact with the inner diameter of the downhole tubular; and
an actuator coupled with the valve member, so that when the actuator is activated, the valve member is moved between the open and the closed configurations.
2. The pumpdown sub of claim 1, wherein the valve member is planar and has an outer diameter that is substantially the same as an inner diameter of the downhole tubular.
3. The pumpdown sub of claim 2, wherein the actuator comprises a motor and an arm with an end connected to the motor and a distal end coupled with a planar surface of the valve member and which is offset from a middle of the valve member.
4. The pumpdown sub of claim 2, wherein the body comprises upper and lower portions, wherein semi-elliptically shaped basket elements connect the upper and lower portions,
5. The pumpdown sub of claim 4, further comprising a hinge pin that extends lengthwise through the valve member and has opposing ends anchored in the basket elements.
6. The pumpdown sub of claim 4, further comprising stop elements on the basket elements for stopping movement of the valve member.
7. The pumpdown sub of claim 2, wherein the arm is pivotingly coupled to the valve member.
8. The pumpdown sub of claim 4, wherein the basket elements extend radially outward from the body and contact the inner diameter of the downhole tubular.
9. The pumpdown sub of claim 1, wherein the valve member comprises upper and lower body portions that are hingedly affixed to one another along a path that intersects a middle area of the downhole tubular.
10. The pumpdown sub of claim 9 wherein the upper and lower body portions have a semi-circular outer periphery.
11. The pumpdown sub of claim 10, wherein the upper and lower body portions have a middle portion that resembles a half pipe, and have lateral portions that extend radially outward from sides of the middle portion towards the inner diameter of the downhole tubular.
12. The pumpdown sub of claim 9, further comprising a worm gear coupled with the actuator that selectively engages pinion gears that couple to the upper and lower members, so that when the actuator rotates the worm gear, the valve member changes between the open and closed configurations.
13. A pumpdown sub comprising:
a body that attaches to a downhole tool in a wellbore;
an open space in the body;
a hinge member projecting into the space; and
a valve member in the space that hingedly mounts on the hinge member and that is moveable from an open configuration where the valve member is oriented substantially parallel with an axis of the body, to a closed configuration where the valve member is oriented substantially perpendicular with the axis of the body.
14. The pumpdown sub of claim 13, further comprising elliptically shaped basket members that circumscribe the space and have ends secured to the body.
15. The pumpdown sub of claim 13, wherein the valve member is planar and has an outer diameter that is substantially the same as an inner diameter of the downhole tubular and wherein the actuator comprises a motor with an arm that couples with a planar surface of the valve member at a location offset from a middle of the valve member.
16. The pumpdown sub of claim 13, wherein the valve member comprises upper and lower body portions that are hingedly affixed to one another along a path that intersects a middle area of the downhole tubular, wherein the upper and lower body portions have a semi-circular outer periphery, and
wherein the upper and lower body portions comprise a middle portion that resembles a half pipe, and lateral portions that extend radially outward from sides of the middle portion towards the inner diameter of the downhole tubular.
17. A method of pumpdown operations in a wellbore comprising:
providing a downhole tool having a pumpdown valve that is changeable from an open configuration and substantially parallel with an axis of the wellbore, to a closed configuration and substantially perpendicular with the axis of the wellbore;
deploying the tool in the wellbore;
dropping the tool in the wellbore when the pumpdown valve is in the open configuration; and
pumping fluid into the wellbore to urge the tool deeper into the wellbore when the pumpdown valve is in the closed configuration.
18. The method of claim 17, further comprising pulling the tool upward within the wellbore when the pumpdown valve is in the open configuration.