What is claimed is:
1. An apparatus for sputter deposition of a film layer onto a substrate comprising:
a vacuum chamber;
a substrate support disposed within said vacuum chamber,
a target disposed within said chamber; and
a coil disposed within said chamber and extending within a space defined between said target and substrate support, said coil having a sputtering surface and a coolant carrying channel defined within said coil, wherein at least a portion of said sputtering surface is non-circular in a plane orthogonal to a longitudinal tangential axis of the coil.
2. The apparatus of claim 1 wherein said coil sputtering surface is flat in said plane.
3. The apparatus of claim 1, wherein said coil comprises a first ribbon-shaped coil and a second tubular coil thermally coupled to said first coil.
4. The apparatus of claim 3, wherein said first ribbon-shaped coil and second tubular coil are each ring-shaped.
5. The apparatus of claim 4, wherein said first ribbon-shaped coil defines an outer surface and said second tubular coil is coupled to said outer surface of said first ribbon-shaped coil.
6. The apparatus of claim 4, wherein said first ribbon-shaped coil defines an inner surface and said second tubular coil is coupled to said inner surface of said ribbon-shaped coil.
7. The apparatus of claim 1, wherein said coil is comprised of the same material as said target.
8. The apparatus of claim 1, wherein said coil is adapted to radiate RF energy from said coil.
9. An apparatus for sputter deposition of a film layer onto a substrate comprising:
a vacuum chamber;
a substrate support disposed within said vacuum chamber;
a target disposed within said chamber;
a first coil disposed within said chamber and extending through a space defined between said target and substrate support; and
a second coil thermally coupled to said first coil.
10. The apparatus of claim 9, wherein said second coil defines a coolant carrying channel within said second coil.
11. The apparatus of claim 9, wherein both said first coil and said second coil are each ring-shaped.
12. The apparatus of claim 11, wherein said first coil defines an outer surface and second coil is coupled to said outer surface of said first coil.
13. The apparatus of claim 11, wherein said first coil defines an inner surface and second coil is coupled to said inner surface of the said first coil.
14. The apparatus of claim 9, wherein said first coil is adapted to radiate RF energy from said coil.
15. The apparatus of claim 9, wherein said first coil has width at least twice as wide as the width of said second coil.
16. An apparatus for sputter deposition of a film layer onto a substrate comprising:
a vacuum chamber;
a substrate support disposed within said vacuum chamber,
a target disposed within said chamber;
a coil disposed within said chamber and extending within a space defined between said target and substrate support, said coil having a coolant carrying channel within said coil; and
a first flange extending outward from a surface of said coil.
17. The apparatus of claim 16 further comprising a second flange extending outward from a surface of said coil.
18. The apparatus of claim 17 wherein said first and second flanges are separate and said coil is positioned between said first and second flanges.
19. The apparatus of claim 18 wherein said first and second flanges are welded to said coil.
20. An apparatus for energizing a plasma within a semiconductor fabrication system to sputter material onto a workpiece, the apparatus comprising:
a semiconductor fabrication chamber having a plasma generation area within said chamber;
a sputtering target carried within said chamber and made of a first material, said target being positioned to sputter said target material onto said workpiece; and
a first ring-shaped ribbon coil disposed within said chamber and extending through a space defined between said target and substrate support, wherein said first coil is positioned to couple energy into the plasma generation area and to sputter coil material onto said workpiece so that both coil material and target material are deposited on said workpiece to form a layer thereon; and
a second ring-shaped coil thermally coupled to said first coil, said second coil having a coolant carrying channel defined therein.
21. A method of depositing material onto a workpiece in a sputter deposition chamber, comprising:
sputtering target material onto said workpiece from a target positioned in said chamber; and
sputtering material onto said workpiece from a first coil; and
flowing a coolant through a second tubular-shaped coil thermally coupled to said first coil to cool said first coil.
22. The method of claim 21, wherein said sputtering surface is ribbon-shaped.
23. An antennae for a sputter deposition apparatus using RF energy, comprising:
a coil adapted to radiate said RF energy, said coil having a sputtering surface and a coolant carrying channel defined within said coil, wherein at least a portion of said sputtering surface is non-circular is a plane orthogonal to a longitudinal tangential axis of the coil.
24. The antennae of claim 23, wherein said sputtering surface is flat in said plane.
25. The antennae of claim 23, wherein said coil comprises a first ribbon-shaped coil and a second tubular coil thermally coupled to said first coil.
26. The antennae of claim 25, wherein said first ribbon-shaped coil and second tubular coil are each ring-shaped.
27. The antennae of claim 26, wherein said first ribbon-shaped coil defines an outer surface and said second tubular coil is coupled to said outer surface of said first ribbon-shaped coil.
28. The antennae of claim 26, wherein said first ribbon-shaped coil defines an inner surface and said second tubular coil is coupled to said inner surface of said ribbon-shaped coil.
29. The antennae of claim 23, wherein said coil is comprised of a sputter deposition material selected from the group of titanium, tantalum, copper and aluminum.
30. An antennae for an apparatus for sputter deposition of a film layer onto a substrate comprising:
a first coil; and
a second tubular-shaped coil thermally coupled to said first coil.
31. The antennae of claim 30, wherein said second coil defines a coolant carrying channel within said second coil.
32. The antennae of claim 30, wherein both said first coil and said second tubular-shaped coil are each ring-shaped.
33. The antennae of claim 30, wherein said first coil is a ribbon-shaped coil which defines an outer surface and said second tubular coil is coupled to said outer surface of said first ribbon-shaped coil.
34. The antennae of claim 30, wherein said first coil is a ribbon-shaped coil which defines an inner surface and said second tubular coil is coupled to said inner surface of the said ribbon-shaped coil.
35. The antennae of claim 30, wherein said first coil has width at least twice as wide as the width of said second tubular-shaped coil.
36. An antennae for an apparatus for sputter deposition of a film layer onto a substrate comprising:
a tubular-shaped coil; and
a first flange extending outward from a surface of said tubular-shaped coil.
37. The apparatus of claim 36 further comprising a second flange extending outward from a surface of said coil.
38. The apparatus of claim 37 wherein said first and second flanges are separate and said coil is positioned between said first and second flanges.
39. The apparatus of claim 38 wherein said first and second flanges are welded to said coil.
40. The antennae of claim 36, wherein said tubular-shaped coil defines a coolant carrying channel within said coil.
41. An antennae for energizing a plasma within a semiconductor fabrication system to sputter material onto a workpiece, the antennae comprising:
a first ring-shaped ribbon coil adapted to sputter coil material onto said workpiece; and
a second tubular ring-shaped coil thermally coupled to said first coil, said tubular-shaped coil having a coolant carrying channel defined therein.
42. A method of depositing material on a workpiece in a sputter deposition chamber, comprising:
sputtering target material onto said workpiece from a target positioned in said chamber;
sputtering coil material onto said workpiece from a coil disposed within the chamber and extending within a space defined between said target and substrate support, said coil having a sputtering surface and a coolant carrying channel defined within said coil, wherein at least a portion of said sputtering surface is non-circular is a plane orthogonal to a longitudinal tangential axis of the coil; and
flowing a coolant fluid through said coolant carrying channel.
43. The method of claim 40, further comprising passing RF current through said coil to energize a plasma in said chamber.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for reducing titanium dioxide buildup in equipment used for the production of titanium dioxide, comprising the steps of:
calcining a blend of anatase and rutile titanium dioxides to produce a scour medium;
and introducing the scour medium into the equipment used for the production of titanium dioxide.
2. The method of claim 1, wherein the calcining step takes place at a temperature greater than about 1025\xb0 C.
3. The method of claim 1, wherein the blend is calcined to a crush strength between about 15 percent and about 30 percent.
4. The method of claim 1, wherein the blend is calcined to a density of from about 1.55 gcm3 to about 1.71 gcm3.
5. The method of claim 1, wherein the calcined blend is introduced into an oxidation reactor.
6. The method of claim 1, wherein the calcined blend is introduced into a cooling conduit.
7. The method of claim 1, wherein the blend is at least about 10 percent anatase by weight.
8. The method of claim 1, wherein the blend is at least about 50 percent anatase by weight.
9. The method of claim 1, wherein the blend is at least about 75 percent anatase by weight.
10. The method of claim 1, wherein the blend is at least about 90 percent anatase by Case No. weight.
11. The method of claim 1, wherein the proportions of the anatase and rutile titanium dioxides in the blend are selected and calcinations conditions employed to effect at least that degree of conversion of the anatase titanium dioxide in the blend which enables an anatase content of less than about 1 percent by weight of the combined produced titanium dioxide and spent scouring medium, when the scour medium is used to an extent whereby it comprises from about 2 to about 10 percent of the mass flow through the production equipment for producing said titanium dioxide.
12. The method of claim 11, wherein the anatase content of the produced titanium dioxide and spent scouring medium is maintained at less than about 0.5 percent by weight.
13. The method of claim 11, wherein the anatase content of the produced titanium dioxide and spent scouring medium is maintained at less than about 0.2 percent by weight.