Author: claimsbot

1. An extension socket structure comprising:
an extension socket; and
a positioning sleeve having a first rim extending from a top end and a second rim extending from a bottom end thereof, the first rim having a slot disposed thereon, an opening being disposed on a front face of the positioning sleeve, and a plurality of positioning slots being disposed on a rear face of the positioning sleeve,
wherein the extension socket is inserted in the positioning sleeve for a socket panel on the extension socket to protrude from the opening of the positioning sleeve.
2. The extension socket structure of claim 1, wherein the positioning sleeve has a cone screwed to a bottom thereof, the cone being implemented for fixing the extension socket to a lawn, a ground or sand to provide outdoor use.
3. The extension socket structure of claim 1, wherein a wire of the extension socket is wound around the positioning sleeve and contained in the plurality of positioning slots, and a plug of the extension socket can be locked to the slot on the first rim of the top end of the positioning sleeve.
4. The extension socket structure of claim 1, wherein the extension socket has a positioning hole disposed near a top end of the rear face, and two parallelly-formed hollow rods extending from a topmost positioning slot of the positioning sleeve, with a cover plate covering two hollow rods, the cover plate being connected to a bolt, with a retaining plate extending from the bolt to divide the bolt into a first half and a second half, the first half of the bolt protruding through the positioning sleeve, the second half having a spring wrapped around the second half and protruded through the cover plate, when the extension socket combines with the positioning sleeve, the first half of the bolt joining with the positioning hole of the extension socket to fix the extension socket.
5. The extension socket structure of claim 1, wherein the positioning sleeve has an outlet joined to a bottom end of the opening of the front face, the outlet guiding a wire of the extension socket to extend out of the positioning sleeve.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for preparing a glyphosate herbicidal aqueous concentrate to improve the handling of the concentrate, the method comprising:
forming a mixture of at least two nitrogen bases,
forming a mixture of at least one further acid herbicide with glyphosate acid, and
reacting the mixture of the at least two bases with the mixture of glyphosate acid and at least one other acid herbicide to provide an aqueous mixture of herbicide salts,
wherein the concentration of glyphosate (based on glyphosate acid equivalent) is at least 200 gaeL, wherein the total acid herbicide salts, including glyphosate is at least 360 gaeL, at least two bases are selected from the group consisting of ammonia, C1 to C10 alkylamine, di-(C1 to C6 alkyl)amine, tri-(C1 to C6 alkyl)amine, C1 to C10 alkanolamine, C1 to C6 alkyl(C1 to C6 alkanol)amines and di-(C1 to C6 alkyl)C1 to C6 alkanolamines, and wherein the mole ratio of the at least two nitrogen bases:total acid herbicides is in the range of from 0.9:1 to 1.3:1.
2. The method according to claim 1, wherein the at least one acid herbicide is selected from the group consisting of dicamba, aminopyralid, clopyralid, picloram, 2,4-D, MCPA, 2,4-DB, mecoprop, mecoprop-P, glufosinate, diclofop and fluazifop.
3. The method according to claim 2, wherein the at least one acid herbicide is selected from the group consisting of dicamba, clopyralid, 2,4-D, MCPA and mecoprop.
4. The method according to claim 1, comprising forming a premix of bases by mixing the bases to form a homogeneous mixture and reacting the premix with mixture of glyphosate acid and at least one other acid herbicide in an aqueous reaction medium.
5. The method according to claim 1, wherein the concentration of acid herbicide salts, including glyphosate, is at least 450 gaeliter.
6. The method according to claim 1, wherein the concentration of the acid herbicide salts, including glyphosate, is at least 600 gae per liter.
7. The method according to claim 1, wherein the concentration of glyphosate salts is at least 360 gaeL.
8. The method according to claim 1, wherein the at least one other acid herbicide comprises 2,4-D present in an amount of at least 200 gL.
9. The method according to claim 1, wherein the mixture of bases include at least one nitrogen base other than ammonia and isopropylamine.
10. The method according to claim 1, wherein the nitrogen bases comprise at least two selected from the group consisting of ammonia, mono-(C1 to C10)alkyl amines, di-(C1 to C4)alkyl amines and tri-(C1 to C4 alkyl)amines.
11. The method according to claim 1, wherein the nitrogen bases comprise at least two selected from the group consisting of ammonia, methylamine, dimethylamine, diethylamine, isopropylamine, diisopropylamine, triethylamine and triisopropylamine.
12. The method according to claim 1, wherein the mixture of bases includes at least three nitrogen bases.
13. The method according to claim 1, wherein the reaction between the glyphosate acid and nitrogen bases is carried out at a temperature in the range of from 5\xb0 C. to 90\xb0 C.
14. The method according to claim 1, further comprising addition of a surfactant.
15. The method according to claim 14, wherein the concentration of the surfactant is in the range of from 0.1 to 20% by weight of the aqueous glyphosate concentrate composition.
16. The method according to claim 14, wherein the surfactant comprises one or more selected from the group consisting of quaternary ammonium surfactant; etheramine surfactants; alkylether and amine surfactant combinations; acetylenic diol and alkyl(poly)glycoside surfactant combinations; lipophilic fatty amine ethoxylate surfactants; alkoxylated amine surfactants; betaine surfactants; alkyl polyglycoside agents; secondary or tertiary alcohol surfactants; silicone copolymer wetting agents and trialkylamine oxide or quaternary amine or trialkylbetaine surfactant combinations; sorbitan fatty acid ester and amine, quaternary ammonium or alkylglycoside surfactant combinations; surfactants derived from alkanethiols; polyoxyalkylene trisiloxane surfactants; super-wetting agents selected from silicone-based and fluorocarbon-based surfactants; supra-molecular aggregates comprising one or more amphiphilic salts having a glyphosate anion and cation derived by protonation of secondary or tertiary oily amines; alkoxylated primary alcohol surfactants; alkyl polysaccharide derivates; alkyl polyglycoside and ethoxylated alcohol combinations; alkylglucosides; surfactants comprising polyhydroxyhydrocarbyl and amine functionality; alkylglycoside and alkoxylated alkylamine surfactant combinations; alkyldiamine tetraalkoxylate surfactants; succinic acid derivatives; alkoxylated amido amines; sugar glycerides; diamine surfactants; widely-bridged alcohol polyethoxylates; water-soluble long-chain hydrocarbyl dimethylamine oxides and quaternary ammonium halide combinations; hydroxyalkylammonium adjuvants; polyether diamine surfactants; cationic, anionic, nonionic or zwitterionic silicone adjuvants; organosilicone surfactants and diphenyl oxide sulfonate surfactant combinations; ether phosphate adjuvants; phosphorous surfactant adjuvants; polyglycerol and polyglycerol derivatives; C8-C22 sarcosinate or sarcosinate salts; ethoxylated vegetable oils; polyethoxylated dialkylamine surfactants; C10-C18 alkylpolyglycol ether sulfates; Sucrose & Sorbital Surfactants; Sorbitan Esters; Ethoxylated Saccahrose Esters; Coco Amido Propyl Dimethylamine Akyldimethylamines; Phosphated Esters Tallow Amine Surfactants; Trisiloxanes; TEA and MDEA Esterquats; Dimethylethanolamine based Esterquats; Alkyl Polysaccharide; Glucosides; Alkyl Polypentosides (APP); Polyglycerines; Etheramine Alkoxylates; Sorbitan Monolaurate; Pine Terpinic compounds; Cocoamine ethoxylates; Acrylates & Latex compounds; (Ethoxylated) Oleyl Alcohols; Alkylamine Alkoxylates; Etheramine AlkoxylatesAlkyl Etheramine; Quaternary Ammonium SaltsAmmonium Quaternary Derivatives; Quat Amines; Amine Oxides; Dialkoxylates Amines; Alkyl Alkoxylated Phosphates; Aminated Alkoxylated Alcohols; Dialkoxylated Amines; Carboxylates; Alkylethersulfates; Disodium sulfosuccinatesSuccinates; Polyether Amines; Cocoamidopropyl betaines and salts of fatty acids.

1. A solid-state semiconductor light emitting device comprising:
a heat sink having a receiving cup that projects from a center of said heat sink for receiving a chip; and
a leadframe, in which two holders having two top sides on two top portions thereof are opposite to one another and a holder having holes is mounted between said two top sides, wherein said holder having said holes is connected to one of said two opposite holders, and a plastic material is applied to mold said three holders into a connection base for receiving said receiving cup of said heat sink;
thereby said chip is connected to said leadframe via a metal wire and a resin or silicone are applied to cover all of them so as to form said solid-state semiconductor light emitting device that has good heat-dissipating efficacy and can enhance connection stability.
2. The solid-state semiconductor light emitting device of claim 1, wherein a plurality of through holes are mounted on said connection base for exposing said three holders.
3. The solid-state semiconductor light emitting device of claim 1, wherein a protrusion is mounted on said bottom surface of said heat sink.
4. The solid-state semiconductor light emitting device of claim 3, wherein said protrusion is in the form of radiation.
5. The solid-state semiconductor light emitting device of claim 3, wherein said protrusion is arranged in the form of homocentric circles.
6. The solid-state semiconductor light emitting device of claim 1, wherein said holder having said holes is connected to one of said two opposite holders in a random position.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for automatically determining the best effective reconstruction gap in a CT apparatus, wherein the CT apparatus comprises a detector comprising a plurality of modules with physical gaps between the plurality of modules, the method comprising:
scanning a phantom to collect image data of the phantom;
obtaining a plurality of images by using a plurality of different gap values to reconstruct image of the phantom, wherein each of the plurality of images is respectively associated with a gap value of the different gap values;
selecting the best image from the plurality of images; and
automatically determining the gap value associated with the best image, and saving the determined gap value as the best effective reconstruction gap.
2. The method according to claim 1, wherein selecting the best image from the plurality of images comprises manually selecting the best image by a user based on visual evaluation of a band artifact in each of the plurality of images.
3. The method according to claim 1, wherein selecting the best image from the plurality of images comprises automatically selecting the best image by the CT apparatus based on calculation of a band artifact parameter in each of the plurality of images.
4. The method according to claim 3, wherein the calculation of the band artifact parameter in each of the plurality of images comprises:
estimating a location and a width of the band artifact in the image based on the location and the size of the physical gap, and based on the geometry of the CT apparatus;
determining locations of a band artifact region of interest, a first neighbor region of interest, and a second neighbor region of interest based on the estimated location and the estimated width of the band artifact;
averaging CT values of all pixels within the first neighboring region of interest and the second neighboring region of interest to obtain a background CT value;
averaging CT values of all pixels within the band artifact region of interest to obtain a band artifact CT value; and
calculating an absolute value of a difference between the background CT value and the band artifact CT value to obtain the band artifact parameter.
5. The method according to claim 3, wherein the calculation of the band artifact parameter in each of the plurality of images comprises:
estimating a location and a width of the band artifact in the image based on the location and the size of the physical gap and based on the geometry of the CT apparatus;
determining locations of a band artifact region of interest, a first neighbor region of interest, and a second neighbor region of interest based on the estimated location and the estimated width of the band artifact;
averaging CT values of all pixels within the first neighbor region of interest and the second neighbor region of interest to obtain a background CT value;
sorting CT values of all pixels within the band artifact of interest in descending order as 1st pixel up to Nth pixel, where N is the total number of pixels within the band artifact region of interest;
averaging the CT values of all pixels within the band artifact region of interest to obtain a band artifact region of interest CT value;
comparing the background CT value and the band artifact region of interest CT value;
determining that the band artifact parameter is equal to zero if the background CT value is equal to the band artifact region of interest CT value, and comparing the background CT value with the 1st pixel and the Nth pixel if the background CT value is not equal to the band artifact region of interest CT value;
determining the band artifact region of interest CT value as a band artifact CT value if a condition that the background CT value is larger than the 1st pixel or is less than the Nth pixel is satisfied, or if the condition is not satisfied, sequentially fetching M pixels, starting from the Nth pixel if the background CT value is less than the band artifact region of interest CT value, or sequentially fetching M pixel, starting from the 1st pixel if the background CT value is larger than the band artifact region of interest CT value, until a mean value of CT values of the M pixels is equal to the background CT value, where 1\u2266M<N, and then calculating a mean value of CT values of remaining (N\u2212M) pixels within the band artifact region of interest as the band artifact CT value; and
calculating an absolute value of a difference between the background CT value and the band artifact CT value to obtain the band artifact parameter.
6. The method according to claim 4, wherein the location of the physical gap is calculated based on serial numbers of detecting channels in the detector, while the size of the physical gap is actually measured.
7. The method according to claim 1, wherein the phantom is a water phantom.
8. The method according to claim 7, wherein the water phantom is small in size and is arranged in an off-centered manner.
9. The method according to claim 7, wherein the water phantom is small in size and is centrally arranged to cover only the physical gap of a center module in the detector.
10. The method according to claim 7, wherein the water phantom is large in size, and a large current of an X-ray source and a large slice thickness is employed when the water phantom is scanned.
11. The method according to claim 1, wherein the plurality of different gap values are entered manually by a user or set automatically by the CT apparatus.
12. The method according to claim 1, wherein a standard kernel function andor a sharp kernel function is employed during reconstructing an image of the phantom.
13. The method according to claim 12, wherein the sharp kernel function is a bone kernel function or an edge kernel function.
14. A method for removing a band artifact in a reconstructed image in a CT apparatus, the method comprising:
scanning an object to collect image data of an object;
reconstructing an image of the object based on the image data of the object by using the best effective reconstruction gap determined by the method according to claim 1.
15. A method for determining a band artifact parameter in a reconstructed image in a CT apparatus, comprising:
estimating location and width of a band artifact in an image based on location and size of individual physical gaps between a plurality of modules in a detector of the CT apparatus;
determining locations of a band artifact region of interest, a first neighbor region of interest and a second neighbor region of interest based on the estimated location and width of the band artifact;
averaging CT values of all pixels within the first neighbor region of interest and the second neighbor region of interest to obtain a background CT value;
sorting CT values of all pixels within the band artifact region of interest in descending order as 1st pixel up to Nth pixel, where N is the total number of pixels within the band artifact region of interest;
averaging the CT values of all pixels within the band artifact region of interest to obtain a band artifact region of interest CT value;
comparing the background CT value and the band artifact region of interest CT value;
determining that the band artifact parameter is equal to zero if the background CT value is equal to the band artifact region of interest CT value, and comparing the background CT value with the 1st pixel and the Nth pixel if the background CT value is not equal to the band artifact region of interest CT value;
determining the band artifact region of interest CT value as a band artifact CT value if a condition that the background CT value is larger than the 1st pixel or is less than the Nth pixel is satisfied, or if the condition is not satisfied, sequentially fetching M pixels, starting from the Nth pixel if the background CT value is less than the band artifact region of interest CT value, or sequentially fetching M pixel, starting from the 1st pixel if the background CT value is larger than the band artifact region of interest CT value, until a mean value of CT values of the M pixels is equal to the background CT value, where 1\u2266M<N, and then calculating a mean value of CT values of remaining (N\u2212M) pixels within the band artifact region of interest as the band artifact CT value; and
calculating an absolute value of a difference between the background CT value and the band artifact CT value to obtain the band artifact parameter.
16. The method according to claim 15, wherein the location of the physical gap is calculated based on serial numbers of detecting channels in the detector, while the size of the physical gap is actually measured.
17. A CT apparatus, comprising:
an X-ray source;
a collimator;
a detector comprising a plurality of modules with physical gaps between the plurality of modules;
a processor configured to determine the best effective reconstruction gap by processing a plurality of images, wherein each of the plurality of images is respectively associated with a gap value, receiving a selection of the best image from the plurality of images, and determining the gap value associated with the best image as the best effective reconstruction gap; and
an image reconstructor configured to reconstruct an image of a scanned object by using the best effective reconstruction gap.
18. The CT apparatus according to claim 17, wherein the plurality of modules in the detector are flat modules.