What is claimed is:
1. An image display device comprising:
a display unit composed of plural pixels each having a light emitting means;
a signal line for inputting an analog display signal to the pixels;
a light emitting drive means or driving the light emitting means based on the analog display signal inputted to the pixels through the signal line; and
a light emitting control switch means for controlling a light-on or a light-off of the light emitting means during image-displaying,
wherein the light emitting means in each pixel connected to one end of the light emitting drive means.
2. An image display device as claimed in claim 1, wherein the light emitting control switch means is provided between the light emitting drive means and the light emitting means.
3. An image display device as claimed in claim 1, wherein the light emitting means is an organic light emitting diode.
4. An image display device as claimed in claim 1, wherein the light emitting drive means and the light emitting control switch means are polycrystalline silicon thin film transistors provided on a transparent substrate.
5. An image display device as claimed in claim 1, wherein the light emitting control switch means in each pixel is constructed to turn ON or OFF simultaneously.
6. An image display device as claimed in claim 5, wherein the light emitting control switch means is constructed to turn ON when the analog display signal is inputted to the pixels.
7. An image display device as claimed in claim 1, wherein the light emitting control switch means is constructed to turn ON when the analog display signal is inputted to the pixels and to turn OFF after a predetermined light-on time period.
8. An image display device comprising:
a display unit composed of plural pixels each having a light emitting means;
a signal line for inputting an analog display signal to the pixels; and
a light emitting drive means for driving the light emitting means based on the analog display signal inputted to the pixels through the signal line, wherein
the light emitting drive means provided for each of the pixels is a field effect transistor,
the signal line is connected to a gate of the field effect transistor through at least one capacitance means,
one of a source or a drain of the field effect transistor is connected to a power supply means, the other of the source and the drain is connected to the light emitting means, and at least one of the source and the drain is connected via a first switch to the power supply means or the light emitting means, and
the field effect transistor is constructed to apply one of the analog display signal and a virtually triangular pulse signal to the gate thereof through the capacitance means.
9. An image display device as claimed in claim 8, wherein the light emitting means is an organic light emitting diode.
10. An image display device as claimed in claim 8, wherein the light emitting drive means and the light emitting control switch means are polycrystalline silicon thin film transistors provided on a transparent substrate.
11. An image display device as claimed in claim 8, wherein a second switch is provided between the gate and the drain of the field effect transistor, while the first switch is provided between the drain and the light emitting means.
12. An image display device as claimed in claim 11, wherein the field effect transistor, the first switch, and the second switch are TFTs of the same conductivity type.
13. An image display device as claimed in claim 8, wherein both the analog display signal and the virtually triangular pulse signal are generated by a common DA converter.
14. An image display device as claimed in claim 13, wherein the DA converter is composed of polycrystalline silicon thin film transistors.
15. An image display device as claimed in claim 1, further comprising a display signal processing unit for storing at least one display signal taken externally to be processed to form an analog display signal.
16. An image display device as claimed in claim 1, wherein a time period ratio of the light-on and the light-off ranges from 1:9 to 9:1.
17. An image display device as claimed in claim 1, wherein a time period ratio of the light-on and the light-off is 1:1.
18. An image display device as claimed in claim 11, wherein the light-on and the light-off are alternated by alternating the first switch and the second switch.
19. An image display device as claimed in claim 11, wherein the first switch and the second switch are a drive switch and signal input switch.
20. An animation display device comprising:
an image display device including:
a display unit composed of plural pixels each having a light emitting means;
a signal line for inputting an analog display signal to the pixels;
a light emitting drive means or driving the light emitting means based on the analog display signal inputted to the pixels through the signal line; and
a light emitting control switch means for controlling a light-on or a light-off of the light emitting means during image-displaying, the light emitting means in each pixel connected to one end of the light emitting drive means;
an input interface circuit for receiving animated image data;
a microprocessor for decoding the animated image data;
a display panel controller incorporating a DA converter;
a triangular pulse generation circuit;
a first battery and a secondary battery; and
a frame memory.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A dielectric plate adapted to be provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process,
wherein a thickness H of said dielectric plate has a predetermined relationship with a wavelength of the microwave in said dielectric plate so that an amount of isolation of said dielectric plate due to transmission of the microwave is minimized, the wavelength being represented by 0n, where 0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of said dielectric plate represented by n1(t), where t is a specific dielectric rate of said dielectric plate in a vacuum.
2. The dielectric plate as claimed in claim 1, wherein the predetermined relationship between the thickness H and the wavelength of said dielectric plate is represented by 0.5<H<0.75.
3. The dielectric plate as claimed in claim 2, wherein the thickness H of said dielectric plate satisfies a relationship represented by 0.6H0.7.
4. The dielectric plate as claimed in claim 1, wherein the predetermined relationship between the thickness H and the wavelength of said dielectric plate is represented by 0.3<H<0.4.
5. The dielectric plate as claimed in claim 1, wherein the predetermined relationship between the thickness H and the wavelength of said dielectric plate is represented by one of the relationships (0.10.5N)H(0.20.5N) and (0.30.5N)H(0.40.5N), where N is an integer.
6. A plasma processing apparatus comprising:
a process chamber in which a plasma process is applied to an object to be processed;
a slot electrode having a plurality of slits guiding a microwave introduced into said process chamber so as to generate plasma in said process chamber; and
a dielectric plate provided between said slot electrode and said process chamber, wherein a thickness H of said dielectric plate has a predetermined relationship with a wavelength of the microwave in said dielectric plate so that an amount of isolation of said dielectric plate due to transmission of the microwave is minimized, the wavelength being represented by 0n, where 0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of said dielectric plate represented by n1(t), where t is a specific dielectric rate of said dielectric plate in a vacuum.
7. The plasma processing apparatus as claimed in claim 6, wherein the predetermined relationship between the thickness H and the wavelength of said dielectric plate is represented by 0.5<H<0.75.
8. The plasma processing apparatus as claimed in claim 7, wherein the thickness H of said dielectric plate satisfies a relationship represented by 0.6H0.7.
9. The plasma processing apparatus as claimed in claim 6, wherein the predetermined relationship between the thickness H and the wavelength of said dielectric plate is represented by 0.3<H<0.4.
10. The plasma processing apparatus as claimed in claim 6, wherein the predetermined relationship between the thickness H and the wavelength of said dielectric plate is represented by one of the relationships (0.10.5N)H(0.20.5N) and (0.30.5N)H(0.40.5N), where N is an integer.