claimsbot – Page 19855 – All The Claims

1460725425-3e38e365-04b4-48aa-bdda-21fa61808cdb

1. A children’s ride-on vehicle, comprising:
a primary vehicle, comprising:
a primary vehicle body having a frame, wherein the primary vehicle body is a reduced-scale body sized for use by a child;
a seat assembly supported on the body and including a seat adapted to receive at least one child;
a plurality of wheels rotatably coupled to the primary vehicle body and including at least one driven wheel, at least one steerable wheel adapted to be selectively steered by a child seated on the seat, and at least one non-driven and non-steerable wheel adapted to travel within a range of positions relative to the frame responsive to external forces imparted to the wheel;
a drive assembly having a motor assembly adapted to drive rotation of the driven wheels and a battery assembly adapted to power the motor assembly; and
a steering assembly including a steering mechanism coupled to the at least one steerable wheel; and

a sidecar coupled to the primary vehicle, the sidecar comprising:
a sidecar body having a frame and a passenger region, wherein the sidecar body is a reduced-scale body sized for use by a child;
at least one seat in the passenger region, wherein the at least one seat is sized for a child; and
at least one wheel rotatably coupled to the sidecar body.
2. The children’s ride-on vehicle of claim 1, further comprising a support bracket interconnecting the primary vehicle body and the sidecar body.
3. The children’s ride-on vehicle of claim 2, wherein the support bracket interconnects the primary vehicle body and the sidecar body forward of the at least one wheel of the sidecar.
4. The children’s ride-on vehicle of claim 1, wherein the sidecar is not removably coupled to the primary vehicle.
5. The children’s ride-on vehicle of claim 1, wherein the sidecar is removably coupled to the primary vehicle.
6. The children’s ride-on vehicle of claim 1, further comprising a coupling structure that couples the sidecar to the primary vehicle and which is adapted to permit selective and repeated interconnection and disconnection of the primary vehicle and the sidecar.
7. The children’s ride-on vehicle of claim 6, wherein the coupling structure includes a latch.
8. The children’s ride-on vehicle of claim 6, wherein the coupling structure includes a hitch.
9. The children’s ride-on vehicle of claim 6, wherein the coupling structure includes at least one fastening device in the form of a hook, pin, clamp, or bolt.
10. The children’s ride-on vehicle of claim 1, wherein the passenger region of the sidecar includes a cavity sized for a child’s legs when the child is sitting on the seat of the sidecar.
11. The children’s ride-on vehicle of claim 1, wherein the body of the sidecar is at least substantially formed from molded plastic.
12. The children’s ride-on vehicle of claim 1, wherein the at least one wheel of the sidecar includes at least one driven wheel, and further wherein the sidecar further comprises a motor assembly adapted to drive the rotation of the at least one driven wheel of the sidecar.
13. The children’s ride-on vehicle of claim 1, wherein the at least one wheel of the sidecar includes at least one driven wheel, and further wherein the drive assembly of the primary vehicle is adapted to drive the rotation of the at least one driven wheel of the sidecar.
14. The children’s ride-on vehicle of claim 1, wherein the at least one wheel of the sidecar includes at least one wheel that is mounted on a common axle with at least one of the plurality of wheels of the primary vehicle.
15. The children’s ride-on vehicle of claim 1, wherein the at least one non-driven and non-steerable wheel is coupled to the frame generally rearward of the at least one driven wheel and the at least one steerable wheel.
16. The children’s ride-on vehicle of claim 15, wherein the at least one non-driven and non-steerable wheel is a non-loadbearing wheel.
17. The children’s ride-on vehicle of claim 15, wherein the frame includes a track that defines upper and lower limits within which the at least one non-driven and non-steerable wheel is adapted to travel as external forces are imparted to the at least one non-driven and non-steerable wheel.
18. A children’s ride-on vehicle, comprising:
a primary vehicle, comprising:
a primary vehicle body having a frame, wherein the primary vehicle body is a reduced-scale body sized for use by a child;
a seat assembly supported on the body and including a seat adapted to receive at least one child;
a plurality of wheels rotatably coupled to the primary vehicle body and including at least one driven wheel and at least one steerable wheel adapted to be selectively steered by a child seated on the seat;
a drive assembly having a motor assembly adapted to drive rotation of the driven wheels and a battery assembly adapted to power the motor assembly; and
a steering assembly including a steering mechanism coupled to the at least one steerable wheel, wherein the steering mechanism includes at least one handgrip adapted to be grasped by a child operating the vehicle and at least one switch positioned for actuation by a child sitting on the seat and holding onto the handgrip with at least one of the child’s hands without requiring the child to release the handgrip, wherein the at least one handgrip is selectively rotatable within a range of positions that include an unactuated position, in which the switch is not actuated, and an actuated position, in which the switch is actuated, wherein in the unactuated position, the drive assembly is adapted to drive the primary vehicle’s at least one driven wheel at a first speed, and in the actuated position, the drive assembly is adapted to selectively drive the primary vehicle’s at least one driven wheel at a second speed that is greater than the first speed; and

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. Electric candle (1), having a candle body (2) and at least two lighting means (8, 20) disposed in the candle body (2),
wherein
it has a candle wick (4) made of a transparent or translucent material, and the candle body (2) represents a casing, wherein the interior of the candle (1) is configured as a cavity (7) in which the lighting means (8, 20) are disposed.
2. Candle according to claim 1,
wherein
the material is glass-fiber-reinforced plastic.
3. Candle according to claim 1,
wherein
the candle body (2) is formed, at least in part, from wax andor a translucent material,
4. Candle according to claim 1,
wherein
the candle wick (4) is enclosed in a flame-shaped structure (5) that is formed from a transparent or at least translucent material.
5. Candle according to claim 1,
wherein
the lighting means (8, 20) are disposed below the candle wick (4).
6. Candle according to claim 1,
wherein
the lighting means (8, 20) are a light-emitting diode.
7. Candle according to claim 1,
wherein
the candle wick (4) projects into an upper face-side end (3) of the candle body (2).
8. Candle according to claim 1,
wherein
the candle wick (4) is disposed on the upper face-side end (3) of the candle body (2).
9. Candle according to claim 1,
wherein
the candle wick (4) is provided with a dark casing.
10. Candle according to claim 1,
wherein
the lighting means (8, 20) are situated on or under an intermediate plane (12) that runs parallel to the lower face-side (13) of the candle body (2) and carries at least one of the lighting means (8, 20).
11. Candle according to claim 1,
wherein
there is a circuit in the cavity (7).
12. Candle according to claim 11,
wherein
the circuit is formed from the lighting means (8, 20), the power supply (14), as well as a switch (15).
13. Candle according to claim 4,
wherein
the candle wick (4) is fastened onto a crosspiece (17), the two end sides of which is connected with the edge of an opening (18), and which does not completely cover the opening (18).
14. Candle according to claim 4,
wherein
there is an opening (18) on the underside of the flame-shaped structure (5).

1460725417-27376ead-75c2-4251-9f38-b60e7048b2c1

1. A method of manufacturing a catalytic converter a catalyst whose outer peripheral surface is wrapped with a mat, and an outer cylindrical housing which includes at least a reduced-diameter portion to support therein the catalyst and the mat, the method comprising the steps of:
providing a pressing device, and thereby press-fitting the catalyst and the mat into the outer cylindrical housing along a longitudinal direction of the outer cylindrical housing;
a detecting step of detecting a longitudinal pressing force at a time when at least a portion of the catalyst is within an enlarged-diameter portion of the outer cylindrical housing while the pressing device is pressing the catalyst and the mat in the longitudinal direction into the outer cylindrical housing;
a determining step of determining a diameter reduction of the outer cylindrical housing, by which a clearance value between the outer cylindrical housing and the catalyst is set to a desired target value, as a function of the longitudinal pressing force detected by the detecting step; and
a swaging step of reducing a diameter of the outer cylindrical housing based on the diameter reduction calculated by the determining step.
2. The method as claimed in claim 1, wherein the outer cylindrical housing is swaged in the swaging step after the catalyst is press-fitted into the outer cylindrical housing.
3. The method as claimed in claim 2, wherein the press-fitting of the catalyst is carried out using a funnel-shaped enlarged diameter member, and wherein the detection of the pressing force by the detecting step is carried out by detecting a pressing force upon press-fitting the catalyst into the reduced-diameter portion.
4. The method as claimed in claim 3, wherein the enlarged diameter member comprises an inclined portion, and the reduced-diameter portion includes a cylindrical portion having a straight inner surface which continuously extends from the inclined portion, and wherein the detection of the pressing force by the detecting step is carried out at a position just before a rear end portion of the mat enters from the inclined portion into the cylindrical portion as viewed in a press-fitting direction of the catalyst.
5. The method as claimed in claim 4, wherein the cylindrical portion is formed to have a length such that at least an entire length of the catalyst is received therein.
6. The method as claimed in claim 4, wherein the press-fitting direction of the catalyst is the longitudinal direction.
7. The method as claimed in claim 2, wherein the detection of the pressing force by the detecting step is carried out by detecting a pressing force of the catalyst after the catalyst is press-fitted into the outer cylindrical housing.
8. The method as claimed in claim 2, further comprising a pre-swaging step for providing a reduced diameter portion on the outer cylindrical housing by a swaging process, in which swaging is performed with a smaller diameter reduction than the diameter reduction in the swaging step, and for providing an inclined stepped portion between this reduced diameter portion and a non-swaged portion, and wherein the detection of the pressing force by the detecting step is carried out at a position just before a rear end portion of the mat enters from the stepped portion into the reduced diameter portion as viewed in a press-fitting direction of the catalyst.
9. The method as claimed in claim 2, further comprising a press-fitting step for temporarily stopping a press-fitting operation after the catalyst is entirely press-fitted inside the outer cylindrical housing, and a re-press-fitting step for restarting the press-fitting operation temporarily stopped by the press-fitting step and re-press-fitting the catalyst, and wherein the detection of the pressing force by the detecting step is carried out in the re-press-fitting step.
10. The method as claimed in claim 2, wherein the calculation of the diameter reduction by the calculating step is carried out based on data which are previously set in accordance with kinds of mats, catalysts, and outer cylindrical housings.
11. The method as claimed in claim 2, wherein the calculation of the diameter reduction by the calculating step is carried out based on a peak value of the pressing force detected by the detecting step at a predetermined insertion position.
12. The method as claimed in claim 2, wherein a sheet made of polypropylene or polyethylene terephthalate is attached to an outer surface of the mat.
13. The method as claimed in claim 1, wherein the catalyst is press-fitted into the outer cylindrical housing after the outer cylindrical housing is swaged.
14. The method as claimed in claim 1, further comprising:
controlling a plurality of the catalytic converters for checking on acceptancerejection of each catalytic converter, by including in the determining step; and
pressing the catalyst in the swaged outer cylindrical housing to determine whether or not the catalyst is supported by a predetermined packing density.
15. The method as claimed in claim 14, wherein the determining step is carried out after the catalyst is press-fitted into the outer cylindrical housing.
16. The method as claimed in claim 14, wherein the determination step is carried out after the outer cylindrical housing is swaged and in the process of press-fitting the catalyst into the outer cylindrical housing.
17. The method as claimed in claim 14, wherein a sheet made of polypropylene or polyethylene terephthalate is attached to an outer surface of the mat.
18. The method as claimed in claim 1, wherein the longitudinal direction is substantially parallel to an axis of the outer cylindrical housing.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A manufacturing method of a vertical channel transistor array, comprising:
providing a semiconductor substrate;
forming a plurality of first trenches in the semiconductor substrate, wherein the first trenches are arranged in parallel and extended along a column direction;
forming a plurality of embedded bit lines at bottoms of the first trenches;
forming a plurality of bit line contacts, each of the bit line contacts being formed on a side surface of one of the embedded bit lines, wherein the embedded bit lines are electrically connected to the semiconductor substrate through the bit line contacts;
forming a plurality of second trenches in the semiconductor substrate, wherein the second trenches are arranged in parallel and extended along a row direction, and the semiconductor substrate is divided into a plurality of semiconductor pillars by the first trenches and the second trenches;
forming a gate dielectric layer on surfaces of the semiconductor pillars;
forming a plurality of embedded word lines at bottoms of the second trenches; and
forming a current leakage isolation structure in the semiconductor substrate to prevent current leakage between adjacent bit line contacts, wherein the current leakage isolation structure is disposed at terminals of the embedded bit lines.
2. The manufacturing method of the vertical channel transistor array as claimed in claim 1, wherein the current leakage isolation structure is a shallow trench isolation structure.
3. The manufacturing method of the vertical channel transistor array as claimed in claim 1, wherein the step of forming the current leakage isolation structure is before the step of forming the first trenches in the semiconductor substrate.
4. The manufacturing method of the vertical channel transistor array as claimed in claim 2, wherein the shallow trench isolation structure comprises a plurality of shallow trench isolation blocks.
5. The manufacturing method of the vertical channel transistor array as claimed in claim 1, wherein the current leakage isolation structure is a doped region.
6. The manufacturing method of the vertical channel transistor array as claimed in claim 5, wherein a method of forming the doped region comprises ion implantation.
7. The manufacturing method of the vertical channel transistor array as claimed in claim 1, wherein the step of forming the current leakage isolation structure is after the step of forming embedded word lines in the semiconductor substrate.
8. The manufacturing method of the vertical channel transistor array as claimed in claim 1, further comprising forming a current leakage isolation doped region in the semiconductor substrate located below the embedded bit lines to prevent the adjacent bit line contacts from generating current leakage at bottoms of the embedded bit lines.
9. The manufacturing method of the vertical channel transistor array as claimed in claim 1, further comprising forming an insulating layer between each of the embedded bit lines and the semiconductor substrate.
10. The manufacturing method of the vertical channel transistor array as claimed in claim 9, the step of forming the embedded bit lines at the bottoms of the first trenches and the step of forming each of the bit line contacts at the one side of one of the embedded bit lines comprising:
forming the insulating layer on the semiconductor substrate;
forming a trench filling material layer in the first trenches, a first distance existing between a surface of the trench filling material layer and top surfaces of the first trenches;
forming a first liner layer on a surface of the insulating layer exposed by the trench filling material layer;
removing a portion of the trench filling material layer, such that a second distance exists between the surface of the trench filling material layer and the top surfaces of the first trenches, wherein the second distance is greater than the first distance;
forming a second liner layer on a surface of the first liner and the surface of the insulating layer exposed by the trench filling material layer;
removing the second liner layer located at a first side of each of the first trenches;
removing the insulating layer exposed by the first liner layer;
removing the remaining second liner layer;
sequentially forming a first barrier layer and a first conductive layer in each of the first trenches, each of the first trenches being filled with the first conductive layer;
removing a portion of the first conductive layer and a portion of the first barrier layer, so as to form the embedded bit lines at the bottoms of the first trenches; and
forming the bit line contacts at the sides of the embedded bit lines by causing a reaction between the first barrier layers and the semiconductor substrate.
11. The manufacturing method of the vertical channel transistor array as claimed in claim 1, the step of forming the embedded word lines at the bottoms of the second trenches comprising:
sequentially forming a second barrier layer and a second conductive layer in each of the second trenches;
removing a portion of the second barrier layer and a portion of the second conductive layer, such that a surface of the second conductive layer and the second barrier layer are lower than a surface of the semiconductor substrate;
forming a mask layer on side walls of each of the second trenches; and
removing the remaining second barrier layer and the remaining second conductive layer with use of the mask layer as a mask, so as to form the embedded word lines.
12. The manufacturing method of the vertical channel transistor array as claimed in claim 1, wherein the step of forming the current leakage isolation structure is after the step of forming embedded bit lines but before the step of forming embedded word lines in the semiconductor substrate.
13. The manufacturing method of the vertical channel transistor array as claimed in claim 1, wherein each of the bit line contacts being contacted with a side surface of the semiconductor pillar.