Author: claimsbot

1. A method of representing a digital pathology image programmed in a controller in a device comprising:
a. implementing stain separation to separate a stain including at least one color component; and
b. resampling the at least one color component based on importance.
2. The method of claim 1 further comprising applying a linear transform to the at least one resampled color component.
3. The method of claim 1 further comprising image coding and combining the coded image and stain vector information to generate a compressed image.
4. The method of claim 3 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
5. The method of claim 1 wherein stain separation separates the stain including at least two color components.
6. The method of claim 1 wherein resampling comprises reducing a number of bits used to represent a sample value.
7. The method of claim 1 wherein the device is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
8. A method of encoding a digital pathology image programmed in a controller in a device comprising:
a. implementing stain separation to separate a stain including at least two color components;
b. resampling the at least two color components based on importance;
c. applying a linear transform to the at least two resampled color components resulting in transformed data;
d. encoding the transformed data into encoded data; and
e. combining the encoded data and stain vector information to generate a compressed image.
9. The method of claim 8 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
10. The method of claim 8 wherein resampling comprises reducing a number of bits used to represent a sample value.
11. The method of claim 8 wherein the device is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
12. A method of decreasing computational complexity of processing a digital pathology image by using stain separation programmed in a controller in a device comprising:
a. implementing stain separation to separate a stain into color components;
b. implementing importance weighting for determining a weighting for each of the color components to produce a single color component;
c. processing the single color component; and
d. aggregating an output using the processed single color component and additional information.
13. The method of claim 12 wherein processing comprises implementing extended depth of field.
14. The method of claim 12 wherein the additional information comprises original RGB information.
15. The method of claim 12 wherein the additional information comprises the color components.
16. An apparatus for encoding a digital pathology image programmed in a controller in a device comprising:
a. a stain separation module for separating stain components;
b. a resampling module for resampling the stain components based on importance;
c. a transform module for applying a linear transform to the resampled stain components resulting in transformed data;
d. an encoding module for encoding the transformed data; and
e. a combining module for combining the encoded image and stain vector information to generate a compressed image.
17. The apparatus of claim 16 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
18. The apparatus of claim 16 wherein resampling comprises reducing a number of bits used to represent a sample value.
19. The apparatus of claim 16 wherein the apparatus is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.
20. An apparatus comprising:
a. a memory for storing an application, the application for:
i. implementing stain separation to separate a stain including at least one color component; and
ii. resampling the at least one color component based on importance; and

b. a processing component coupled to the memory, the processing component configured for processing the application.
21. The apparatus of claim 20 wherein the application is further for applying a linear transform to the at least one resampled color component.
22. The apparatus of claim 20 wherein the application is further for image coding and combining the coded image and stain vector information to generate a compressed image.
23. The apparatus of claim 22 wherein image coding comprises compression based on quantization of discrete cosine transform or discrete wavelet transform coefficients.
24. The apparatus of claim 20 wherein stain separation separates the stain including at least two color components.
25. The apparatus of claim 20 wherein resampling comprises reducing a number of bits used to represent a sample value.
26. The apparatus of claim 20 wherein the apparatus comprises a camera.
27. A method of generating a digital pathology image programmed in a controller in a device comprising:
a. decoding an image resulting in transformed color components;
b. applying an inverse linear transform to the transformed color components resulting in resampled color components;
c. resampling the resampled color components resulting in stain color components; and
d. combining the stain color components and additional information to generate the digital pathology image.
28. The method of claim 27 wherein the additional information comprises stain vector information.
29. The method of claim 27 wherein the device is selected from the group consisting of a personal computer, a laptop computer, a computer workstation, a server, a mainframe computer, a handheld computer, a personal digital assistant, a cellularmobile telephone, a smart appliance, a gaming console, a digital camera, a digital camcorder, a camera phone, an iPod\xaeiPhoneiPad, a video player, a DVD writerplayer, a Blu-ray\xae writerplayer, a television, a home entertainment system and a scanner.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A phase change memory cell, comprising:
an interlayer insulating layer formed on a semiconductor substrate;
a first electrode and a second electrode disposed on the interlayer insulating layer;
a phase change material layer disposed between the first and second electrodes, the phase change material layer being one of an undoped GeBiTe layer having a composition ratio within a range surrounded by four points (A1(Ge21.43, Bi16.67, Te61.9), A2(Ge44.51, Bi0.35, Te55.14), A3(Ge59.33, Bi0.5, Te40.17) and A4(Ge38.71, Bi16.13, Te45.16)) represented by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi) and tellurium (Te), a doped GeBiTe layer containing an impurity and having a composition ratio within a range surrounded by four points (D1(Ge10, Bi20, Te70), D2(Ge30, Bi0, Te70), D3(Ge70, Bi0, Te30) and D4(Ge50, Bi20, Te30)) represented by coordinates on the triangular composition diagram, and a doped GeTe layer containing an impurity and having a composition ratio corresponding to coordinates on a straight line between the points D2 and D3; and
a bit line disposed on the interlayer insulating layer and electrically connected to the second electrode.
2. The phase change memory cell according to claim 1, further comprising:
a cell switching device formed on the semiconductor substrate and electrically connected to the first electrode.
3. The phase change memory cell according to claim 2, wherein the cell switching device is a metal oxide semiconductor (MOS) transistor including a source region and a drain region formed in the semiconductor substrate as well as a word line disposed over a channel region between the source region and the drain region, and the first electrode is electrically connected to one of the source and drain regions.
4. The phase change memory cell according to claim 2, wherein the cell switching device is a cell diode.
5. The phase change memory cell according to claim 4, wherein the cell diode is a vertical cell diode having an second conductivity-type semiconductor and a first conductivity-type semiconductor which are sequentially stacked in the interlayer insulating layer, and the first conductivity-type semiconductor is electrically connected to the first electrode.
6. The phase change memory cell according to claim 5, further comprising:
a word line electrically connected to the second conductivity-type semiconductor of the cell diode.
7. The phase change memory cell according to claim 1, wherein the first electrode is a titanium nitride layer (TiN) or a titanium aluminum nitride layer (TiAlN).
8. The phase change memory cell according to claim 1, wherein the second electrode is a titanium nitride layer (TiN).
9. The phase change memory cell according to claim 1, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by four points (B1(Ge30.77, Bi15.38, Te53.85), B2(Ge48.7, Bi1.0, Te50.3), B3(Ge59.3, Bi0.5, Te40.2) and B4(Ge38.7, Bi16.1, Te45.2)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
10. The phase change memory cell according to claim 1, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by six points (C1(Ge33.33, Bi13.34, Te53.33), C2(Ge48.7, B1.0, Te50.3), C3(Ge54.43, Bi0.47, Te45.1), C4(Ge59.3, Bi0.5, Te40.2), C5(Ge47.1, Bi9.8, Te43.1) and C6(Ge44, Bi9, Te47)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
11. The phase change memory cell according to claim 1, wherein the impurity comprises at least one element selected from the group consisting of nitrogen (N), carbon (C), selenium (Se), indium (In), oxygen (O), gallium (Ga), silicon (Si), stannum (Sn), plumbum (Pb), phosphorus (P), arsenic (As), antimony (Sb) and sulfur (S).
12. The phase change memory cell according to claim 11, wherein content of the impurity is within the range of 0.01 atomic % to 20 atomic %.
13. A phase change memory device, comprising:
a semiconductor substrate having a cell array area and a peripheral circuit area;
an interlayer insulating layer formed on the semiconductor substrate;
a first electrode and a second electrode disposed on the interlayer insulating layer in the cell array area;
a phase change material layer disposed between the first and second electrodes, the phase change material layer being one of an undoped GeBiTe layer having a composition ratio within a range surrounded by four points (A1(Ge21.43, Bi16.67, Te61.9), A2(Ge44.51, Bi0.35, Te55.14), A3(Ge59.33, Bi0.5, Te40.17) and A4(Ge38.71, Bi16.13, Te45.16)) represented by coordinates on a triangular composition diagram having vertices of germanium (Ge), bismuth (Bi) and tellurium (Te), a doped GeBiTe layer containing an impurity and having a composition ratio within a range surrounded by four points (D1(Ge10, Bi20, Te70), D2(Ge30, Bi0, Te70), D3(Ge70, Bi0, Te30) and D4(Ge50, Bi20, Te30)) represented by coordinates on the triangular composition diagram, and a doped GeTe layer containing an impurity and having a composition ratio corresponding to coordinates on a straight line between the points D2 and D3; and
a bit line disposed on the interlayer insulating layer and electrically connected to the second electrode.
14. The phase change memory device according to claim 13, further comprising:
a cell switching device formed on the semiconductor substrate in the cell array area and electrically connected to the first electrode.
15. The phase change memory device according to claim 14, wherein the cell switching device is a metal oxide semiconductor (MOS) transistor having a source region and a drain region formed in the semiconductor substrate as well as a word line disposed over a channel region between the source region and the drain region, and the first electrode is electrically connected to one of the source and drain regions.
16. The phase change memory device according to claim 14, wherein the cell switching device is a cell diode.
17. The phase change memory device according to claim 16, wherein the cell diode is a vertical cell diode having an second conductivity-type semiconductor and a first conductivity-type semiconductor which are sequentially stacked on the interlayer insulating layer, and the first conductivity-type semiconductor is electrically connected to the first electrode.
18. The phase change memory device according to claim 17, further comprising:
a word line electrically connected to the second conductivity-type semiconductor of the cell diode.
19. The phase change memory device according to claim 13, wherein the first electrode is a titanium nitride layer (TiN) or a titanium aluminum nitride layer (TiAlN).
20. The phase change memory device according to claim 13, wherein the second electrode is a titanium nitride layer (TiN).
21. The phase change memory device according to claim 13, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by four points (B1(Ge30.77, Bi15.38, Te53.95), B2(Ge48.7, Bi1.0, Te50.3), B3(Ge59.3, Bi0.5, Te40.2) and B4(Ge38.7, Bi16.1, Te45.2)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
22. The phase change memory device according to claim 13, wherein the undoped GeBiTe layer or the doped GeBiTe layer has a composition ratio within a range surrounded by six points (C1(Ge33.33, Bi13.34, Te53.33), C2(Ge48.7, Bi1.0, Te50.3), C3(Ge54.43, Bi0.47, Te45.1), C4(Ge59.3, Bi0.5, Te40.2), C5(Ge47.1, Bi9.8, Te43.1) and C6(Ge44, Bi9, Te47)) represented by coordinates on a triangular composition diagram having vertices of Ge, Bi and Te.
23. The phase change memory device according to claim 13, wherein the impurity comprises at least one element selected from the group consisting of nitrogen (N), carbon (C), selenium (Se), indium (In), oxygen (O), gallium (Ga), silicon (Si), stannum (Sn), plumbum (Pb), phosphorus (P), arsenic (As), antimony (Sb) and sulfur (S).
24. The phase change memory device according to claim 23, wherein content of the impurity is within the range of 0.01 atomic % to 20 atomic %.
25.-43. (canceled)

1. A method for establishing queue priorities for selecting one queue from at least two queues each containing items to be serviced, said method comprising the steps of:
(a) determining for each queue a metric by estimating the aggregate waiting time associated with all of the items in the respective queue, and
(b) using the estimated aggregate waiting time to form a priority metric.
2. The method according to claim 1, wherein each queue is dedicated for a respective Quality of Service (QoS) and step (b) includes:
i) combining the estimated aggregate waiting time with a parameter determined by the QoS for which the queue is dedicated.
3. The method according to claim 1 or 2, wherein at least one of said queues is served by a multi-item server adapted to service, concurrently or serially, a batch containing more than one item and the priority metric is calculated only at the beginning or end of each batch.
4. The method according to any one of the preceding claims, wherein an inter-arrival time t of items at each of said queues is assumed to be locally stationary in order to facilitate the calculation of the aggregate waiting time.
5. The method according to claim 4, wherein the aggregate waiting time is calculated as:
6
EAWT
(

t
+
1

)
=
n
(

n
+
1

)
(

n
+
k

)
(

n
+
k
+
1

)
EAWT
(
t
)
where:
nthe number of items in the queue,
kthe number of items in the queue which depart during a time slot, and
ttime, counted in time-slots (i.e. a time-slot’s index).
6. The method according to claim 5, further including the steps of assuming that n>>k>>1 and calculating:
7
(
S
n
S

n
+
k
)
–
1
1
+
2

k

n
where:
SnSnkthe ratio between the EAWT at the end of the time-slot to the EAWT at the beginning of the time slot;
thereby allowing simple computation the EAWT at the end of a time slot from its value at the beginning of the time slot.
7. The method according to any one the preceding claims, further including:
applying a companding function to the value obtained as queue priority, in order to limit the dynamic range of the priority values generated.
8. Use of the method according to any one the preceding claims for establishing queue priorities in a communication network switch.
9. An apparatus for establishing queue priorities for selecting one queue from at least two queues each containing items to be serviced, said apparatus comprising:
a computer for determining for each queue an estimated aggregate waiting time (EAWT) associated with all of the items in the respective queue, and using the estimated aggregate waiting time to form a priority metric.
10. The apparatus according to claim 9, wherein each queue is dedicated for a respective Quality of Service (QoS) and the computer is adapted to combine the estimated aggregate waiting time with a parameter determined by the QoS for which the queue is dedicated.
11. The apparatus according to claim 9 or 10, wherein at least one of said queues is served by a multi-item server adapted to service, concurrently or serially, a batch containing more than one item and the priority metric is calculated only at the beginning or end of each batch.
12. The apparatus according to any one of claims 9 to 11, wherein an inter-arrival time t of items at each of said queues is assumed to be locally stationary.
13. The apparatus according to claim 12, wherein the computer calculates the aggregate waiting time as:
8
EAWT
(

t
+
1

)
=
n
(

n
+
1

)
(

n
+
k

)
(

n
+
k
+
1

)
EAWT
(
t
)
where:
nthe number of items in the queue,
kthe numbers of items in the queue which depart during a time slot, and
ttime, counted in time-slots (i.e. a time-slot’s index).
14. The apparatus according to claim 13, where it is assumed that n>>k>>1 and the computer is adapted to calculate:
9
(
S
n
S

n
+
k
)
–
1
1
+
2

k

n
where:
SnSnkthe ratio between the EAWT at the end of the time-slot to the EAWT at the beginning of the time slot;
thereby allowing simple computation the EAWT at the end of a time slot from its value at the beginning of the time slot.
15. The apparatus according to any one claims 9 to 14, wherein the computer is further adapted to apply a companding function to the value obtained to limit a dynamic range of the priority values generated.
16. A program storage device readable by machine, tangibly embodying a program of instructions executable by the machine to perform method steps for establishing a queue priority for selecting one queue from at least two queues each containing items to be serviced, said method comprising the steps of:
(a) determining for each queue an estimated aggregate waiting time (EAWT) associated with all of the items in the respective queue, and
(b) using the estimated aggregate waiting time to form a priority metric.
17. A computer program product comprising a computer useable medium having computer readable program code embodied therein for establishing a queue priority for selecting one queue from at least two queues each containing items to be serviced, said computer program product comprising:
computer readable program code for causing the computer to determine for each queue an estimated aggregate waiting time (EAWT) associated with all of the items in the respective queue, and
computer readable program code for causing the computer to use the estimated aggregate waiting time to form a priority metric.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An anti-reflection structure comprising:
a surface with an uneven structure that is composed of a transparent body and includes protrusions, the width between the tops of any pair of the adjacent protrusions being equal to or shorter than visible light wavelengths,
the anti-reflection structure comprising a first region including a surface with the uneven structure, and a second region including a surface with a structure that is composed of a transparent body, the structure being different from the uneven structure in the first region,
the second region in a plan view having a shape that forms at least one selected from the group consisting of characters, symbols, and graphics.
2. The anti-reflection structure according to claim 1,
wherein the second region is intended to be used to enhance visibility for calling attention.
3. The anti-reflection structure according to claim 1,
wherein the second region is used as a logo andor an advertisement.
4. The anti-reflection structure according to claim 1,
wherein the anti-reflection structure is an anti-reflection film that is composed of a transparent resin.
5. The anti-reflection structure according to claim 4,
wherein the structure in the second region is an uneven structure including protrusions, the width between the tops of any pair of the adjacent protrusions being equal to or shorter than visible light wavelengths.
6. The anti-reflection structure according to claim 5,
wherein a protrusion of the uneven structure in the second region is different in height from a protrusion of the uneven structure in the first region.
7. The anti-reflection structure according to claim 5,
wherein the uneven structure in the second region is different in shape from the uneven structure in the first region.
8. The anti-reflection structure according to claim 1,
wherein the structure in the second region is not an uneven structure including protrusions, the width between the tops of any pair of the adjacent protrusions being equal to or shorter than visible light wavelengths.
9-11. (canceled)
12. An imprint mold comprising:
a surface with an uneven structure including protrusions, the width between the tops of any pair of the adjacent protrusions being equal to or shorter than visible light wavelengths,
the imprint mold comprising a first region including a surface with the uneven structure and a second region including a surface with a structure that is different from the uneven structure in the first region,
the second region in a plan view having a shape that forms at least one selected from the group consisting of characters, symbols, and graphics.
13-16. (canceled)
17. A display device comprising:
on a display surface, a transparent body including a surface with an uneven structure including protrusions, the width between the tops of any pair of the adjacent protrusions being equal to or shorter than visible light wavelengths,
the transparent body including a first region including a surface with the uneven structure and a second region including a surface with a structure that is different from the uneven structure in the first region,
the second region in a plan view having a shape that forms at least one selected from the group consisting of characters, symbols, and graphics.
18. The display device according to claim 17,
wherein the uneven structure in the first region and the structure in the second region are composed of a transparent resin.
19. The display device according to claim 17,
wherein the display device is a liquid crystal display device, a plasma display panel, or an organic electroluminescence display.
20. The display device according to claim 17,
wherein the second region is used as a logo andor an advertisement when the display device is in an undisplayed state.