1460723292-167c5284-f282-4f81-ac86-bfa9e8300f29

That which is claimed is:

1. A voltage regulator comprising a regulation MOS transistor with low serial resistance, one of whose terminals receives a supply voltage while its other terminal is connected to the output of the regulator, and an amplifier whose output drives the gate of the transistor as a function of the difference between a reference voltage and a feedback voltage, the regulator comprising:
a switch having one of its terminals connected to the gate of the regulation transistor while its other terminal is taken to a potential for turning the regulation transistor off, and means to control the switch, monitoring the output of the regulator, laid out to close the switch when the output voltage of the regulator is higher than a first threshold that is higher than the nominal value of the output voltage.
2. A regulator according to claim 1, wherein the switch control means are laid out in order to compare the output voltage of the regulator or a voltage proportional to the output voltage with the reference voltage.
3. A regulator according to claim 2, wherein the switch control means comprise a comparator whose output delivers a signal for closing the switch, the comparator receiving the reference voltage at one input and the output voltage or a voltage proportional to the output voltage at another input.
4. A regulator according to claim 3, wherein the comparator has a switch-over hysteresis chosen so that the switch is reopened when the output voltage becomes lower than a second threshold that is lower than the first threshold and higher than the nominal value of the output voltage.
5. A regulator according to one of the claims 1 to 4, wherein the regulation transistor is a PMOS transistor and the turning-off potential is the supply voltage.
6. A regulator according to claim 5, wherein the amplifier comprises an output stage comprising a gate resistor with a value that is too great for the current flowing through the gate resistor to be capable, on its own, of swiftly turning off the regulation transistor when the supply voltage increases rapidly.
7. A regulator according to claim 6, wherein the switch is a PMOS transistor having a drain-source resistance in the on state that is far lower than the gate resistance of the output stage of the amplifier.
8. A mobile telephone comprising a battery and radio circuits powered by the battery by means of a voltage regulator according to one of the claims 1 to 7.
9. A method to prevent or limit the appearance of overshooting at the output of a voltage regulator when the supply voltage of the regulator increases rapidly, the regulator comprising a regulation MOS transistor with high gate capacitance, the gate of which is driven by an amplifier delivering a current which, by itself, is insufficient to swiftly turn off the regulation transistor, the method comprising a step in which there is provided a switch connected between the gate of the regulation transistor and a potential for turning off the regulation transistor, and a step in which the switch is closed when the output voltage of the regulator becomes higher than a first threshold higher than the nominal value of the output voltage, so as to temporarily help the amplifier turn off the regulation transistor.
10. A method according to claim 9, comprising a step in which the switch is reopened when the output voltage of the regulator becomes smaller than a second threshold that is between the nominal value of the output voltage and the first threshold.
11. A method according to one of the claims 9 and 10, in which the switch is driven by a comparator receiving, at input, a reference voltage from the regulator and a voltage proportional to the output voltage of the regulator.
12. A method according to one of the claims 9 to 11, wherein the regulation transistor is a PMOS transistor and the turning-off potential is the supply voltage.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A camera system, comprising:
an imaging optical system configured to form an optical image of a subject;
an imaging component configured to convert the optical image into an image signal and to cyclically acquire images of the subject based on a photography condition;
a display component having first and second display regions that allow a plurality of the images acquired by the imaging component to be displayed side by side;
a condition input component with which the photography condition can be inputted;
a condition adjustment component configured to adjust the photography condition to a preset first photography condition in a first cyclical period and to adjust a second photography condition inputted to the condition input component at a different timing from the timing at which the photography condition is adjusted to the first photography condition; and
a display control component configured to control the display component to cyclically display at least part of a first image cyclically acquired in the first cyclical period by the imaging component under the first photography condition as a reference image in the first display region and to cyclically display at least part of a second image cyclically acquired by the imaging component at a different timing from that of the first image as a comparative image in the second display region,
wherein the condition adjustment component is configured to adjust the photography condition to the first photography condition in the first cyclical period and the photography condition to the second photography condition in a second cyclical period that is the same as the first cyclical period, and
wherein the display control component is arranged to continue to display the most recent reference image on the display component until a newer reference image is acquired.
2. The camera system according to claim 1, wherein
the display control component is arranged to continue to display the most recent comparative image on the display component until a newer comparative image is acquired.
3. The camera system according to claim 2, wherein
the display control component is arranged to enlarge the reference image in the first display region more than another portion of the first image.
4. The camera system according to claim 3, wherein
the display control component is arranged to enlarge the comparative image in the second display region more than another portion of the second image.
5. The camera system according to claim 4, wherein
the reference image and the comparative image are in a relationship of linear symmetry based on the center lines of the images acquired by the imaging component.
6. The camera system according to claim 1, wherein
the display control component is arranged to continue to display the most recent reference image on the display component until a newer reference image is acquired.
7. The camera system according to claim 6, wherein
the display control component is arranged to continue to display the most recent comparative image on the display component until a newer comparative image is acquired.
8. The camera system according to claim 7, wherein
the display control component is arranged to enlarge the reference image in the first display region more than another portion of the first image.
9. The camera system according to claim 8, wherein
the display control component is arranged to enlarge the comparative image in the second display region more than another portion of the second image.
10. The camera system according to claim 9, wherein
the reference image and the comparative image are in a relationship of linear symmetry based on the center lines of the images acquired by the imaging component.
11. The camera system according to claim 1, wherein
the display control component is arranged to enlarge the reference image in the first display region more than another portion of the first image.
12. The camera system according to claim 11, wherein
the display control component is arranged to enlarge the comparative image in the second display region more than another portion of the second image.
13. The camera system according to claim 12, wherein
the reference image and the comparative image are in a relationship of linear symmetry based on the center lines of the images acquired by the imaging component.
14. The camera system according to claim 1, wherein
the reference image and the comparative image are in a relationship of linear symmetry based on the center lines of the images acquired by the imaging component.

1460723284-c6147220-02dc-47c4-a0f7-714798deb337

1. An apparatus adapted to clean a semiconductor device manufacturing component comprising:
an ozone module adapted to:
obtain Ozone;
combine the Ozone with a fluid to generate ozonated fluid; and
deliver the ozonated fluid to the semiconductor device manufacturing component so as to clean the semiconductor device manufacturing component.
2. The apparatus of claim 1, wherein the ozone module is portable.
3. The apparatus of claim 1, wherein the ozone module includes:
an ozone generator adapted to generate Ozone from an Oxygen source;
a valve adapted to combine the Ozone from the ozone generator and the fluid to form the ozonated fluid;
a retention tank adapted to store the ozonated fluid; and
a pump adapted to pump ozonated fluid from the retention tank to the semiconductor device manufacturing component so as to clean the semiconductor device manufacturing component.
4. The apparatus of claim 3, further comprising a cabinet that surrounds the ozone generator, valve, retention tank and pump so as to form a portable ozone module.
5. The apparatus of claim 4 wherein the cabinet is a double-walled cabinet.
6. The apparatus of claim 3, wherein the ozone module further comprises a controller adapted to:
monitor one or more of a state of the pump, a level of exhaust flow from the ozone module, a level of ozone inside the ozone module, a level of ozone outside the ozone module and a level of ozonated fluid flow rate; and
limit operation of the ozone module if the pump is not functioning properly or any monitored level is outside a predetermined range.
7. The apparatus of claim 3, wherein the ozone module further comprises a controller adapted to:
monitor one or more of a state of the pump, a level of exhaust flow from the ozone module, a level of ozone inside the ozone module, a level of ozone outside the ozone module and a level of ozonated fluid flow rate; and
generate an alarm if the pump is not functioning properly or any monitored level is outside a predetermined range.
8. The apparatus of claim 1, wherein the ozonated fluid comprises de-ionized water.
9. The apparatus of claim 8, wherein the de-ionized water is supplied from the semiconductor device manufacturing component.
10. The apparatus of claim 1, wherein the ozonated fluid comprises Hydrogen Peroxide.
11. The apparatus of claim 1, wherein the Ozone is combined with the fluid in a tank.
12. The apparatus of claim 1, wherein the Ozone is combined with the fluid in a valve.
13. The apparatus of claim 1, wherein the ozone module is adapted to remove bacteria from the semiconductor device manufacturing component.
14. The apparatus of claim 1, wherein the ozone module is adapted to heat the ozonated fluid before supplying the ozonated fluid to the semiconductor device manufacturing component.
15. The apparatus of claim 1, wherein the ozone module is adapted to flush the semiconductor device manufacturing component with a cleaning solution at least one of before and after supplying the ozonated fluid to the semiconductor device manufacturing component.
16. The apparatus of claim 15, wherein the cleaning solution comprises Hydrogen Peroxide.
17. The apparatus of claim 16, wherein the ozone module is adapted to purge the semiconductor device manufacturing component with a gas after flushing the semiconductor device manufacturing component.
18. The apparatus of claim 17, wherein the gas comprises Nitrogen.
19. The apparatus of claim 1, wherein the ozone module is adapted to recirculate ozonated fluid used to clean the semiconductor device manufacturing component.
20. The apparatus of claim 3, further comprising one or more filters adapted to selectively filter the ozonated fluid.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method for preventing dopant leaching from a doped structural film during fabrication of a microelectromechanical system, the method comprising:
producing a microstructure that includes the doped structural film, sacrificial material, and metallic material by a combination of techniques selected from the group consisting of deposition, patterning, and etching;
dissolving the sacrificial material with a release solution, the release solution comprising a substance destructive to the sacrificial material and acting as an electrolyte to form a galvanic cell with the doped structural film and metallic material acting as electrodes; and
suppressing effects of the galvanic cell by including a nonionic detergent mixed in the release solution.
2. The method recited in claim 1 wherein the release solution comprises an acid.
3. The method recited in claim 2 wherein the acid is HF.
4. The method recited in claim 1 wherein the doped structural film comprises a doped semiconductor.
5. The method recited in claim 4 wherein the doped structural film comprises doped silicon.
6. The method recited in claim 5 wherein the doped structural film comprises doped polysilicon.
7. The method recited in claim 1 wherein the sacrificial material comprises an oxide.
8. The method recited in claim 7 wherein the oxide is a silicon oxide.
9. The method recited in claim 7 wherein the oxide comprises alumina.
10. The method recited in claim 1 wherein the sacrificial material comprises a nitride.
11. The method recited in claim 10 therein the nitride is a silicon nitride.
12. The method recited in claim 7 wherein the sacrificial material comprises photoresist.
13. The method recited in claim 1 wherein the metallic material comprises gold.
14. The method recited in claim 1 wherein the metallic material comprises aluminum.
15. The method recited in claim 1 wherein the metallic material comprises copper.
16. The method recited in claim 1 wherein the metallic material comprises platinum.
17. The method recited in claim 1 wherein the metallic material comprises nickel
18. The method recited in claim 1 wherein the nonionic detergent comprises an alkyl group and a polyether-linked hydroxy group commonly linked to an aryl group.
19. The method recited in claim 18 wherein the nonionic detergent comprises a Triton X detergent.
20. The method recited in claim 18 wherein the nonionic detergent comprises Triton X-100.
21. The method recited in claim 20 wherein the Triton X-100 is included in the release solution with a concentration approximately between 0.01 and 0.1 vol. %.
22. The method recited in claim 1 wherein the nonionic detergent comprises Igepal CA-630.
23. The method recited in claim 1 wherein the nonionic detergent comprises Nonidet P-40.
24. The method recited in claim 1 wherein the nonionic detergent comprises a hydrophilic moiety and a hydrophobic moiety commonly linked to an aryl group.
25. The method recited in claim 1 wherein the microelectromechanical system is surface micromachined.
26. The method recited in claim 1 wherein the microelectromechanical system comprises part of a mirror array for use in a wavelength router.
27. A microelectromechanical system made according to the method recited in claim 1.
28. A method for preventing dopant leaching from a doped polysilicon structural film during fabrication of a surface micromachined mirror array having a plurality of moveable reflective surfaces for use in a wavelength router, the method comprising:
producing a mirror microstructure that includes the doped polysilicon, sacrificial silicon oxide material, and gold by a combination of techniques selected from the group consisting of deposition, pattering, and etching;
dissolving the silicon oxide material with a release solution, the release solution comprising HF and acting as an electrolyte forming a galvanic cell with the doped polysilicon structural film and gold acting as electrodes; and
suppressing effects of the galvanic cell by including a nonionic detergent mixed in the release solution.
29. The method recited in claim 28 wherein the nonionic detergent comprises an alkyl group and a polyether-linked hydroxy group commonly linked to an aryl group.
30. The method recited in claim 29 wherein the nonionic detergent comprises a Triton X detergent.
31. The method recited in claim 29 wherein the nonionic detergent comprises Triton X-100.
32. The method recited in claim 28 wherein the nonionic detergent comprises a hydrophilic moiety and a hydrophobic moiety commonly linked to an aryl group.
33. A surface micromachined mirror array made according to the method recited in claim 28.
34. A method for fabricating a routing mechanism for use in a wavelength router of the type configured to receive, at an input port, light having a plurality of spectral bands and to direct subsets of the spectral bands to respective ones of a plurality of output ports by providing optical paths in a free-space optical train disposed between the input ports and the output ports and by providing the routing mechanism to direct a given spectral band to different output ports depending on a state of a dynamically configurable routing unit in the routing mechanism, the method comprising:
forming a plurality of such dynamically configurable routing units on a doped structural film with sacrificial material and metallic material by a combination of techniques selected from the group consisting of deposition, patterning, and etching;
dissolving the sacrificial material with a release solution, the release solution comprising a substance destructive to the sacrificial material and acting as an electrolyte forming a galvanic cell with the doped structural film and metallic material acting as electrodes; and
suppressing the effects of the galvanic cell by including a nonionic detergent mixed in the release solution,
whereby dopant leaching from the doped structural film due to the effects of the galvanic cell is suppressed.
35. The method recited in claim 34 wherein the nonionic detergent comprises an alkyl group and a polyether-linked hydroxy group commonly linked to an aryl group.
36. The method recited in claim 35 wherein the nonionic detergent comprises a Triton X detergent.
37. The method recited in claim 35 wherein the nonionic detergent comprises Triton X-100.
38. The method recited in claim 34 wherein the nonionic detergent comprises a hydrophilic moiety and a hydrophobic moiety commonly linked to an aryl group.
39. The method recited in claim 34 wherein the release solution comprises HF, the doped structural film comprises doped polysilicon, the sacrificial material comprises a silicon oxide, the metallic material comprises gold, and the nonionic detergent comprises Triton X-100.
40. A routing mechanism made according to the method recited in claim 39.
41. A routing mechanism made according to the method recited in claim 34.
42. A wavelength router comprising a routing mechanism made according to the method recited in claim 34.