Author: claimsbot

What is claimed is:

1. An inductance integrated in a monolithic circuit, including a conductive spiral having an internal end connected to a connection track, the spiral and the connection track belonging to a same metallization level, wherein the connection between the internal end of the spiral and the connection track is formed by a connecting track belonging to a metallization level higher than the metallization level of the spiral, the monolithic circuit including at least three metallization levels, the spiral and the connecting track belonging to an intermediate metallization level between two metallization levels.
2. The inductance of claim 1, wherein the monolithic circuit includes a ground plane surrounding the spiral and the connection track and which is formed in the same metallization level.
3. The inductance of claim 1, wherein the connection track connects the spiral to a passive component integrated to the monolithic circuit.
4. The inductance of claim 1, wherein the connection track connects the spiral to a pad accessible from the outside of the monolithic circuit.
5. The inductance of claim 1, wherein the spiral and the connection track are covered with an insulating layer on which is formed the connecting track, the connecting track being connected to the spiral and to the connection track by two vias crossing the insulating layer.
6. The inductance of claim 1, wherein the spiral and the connection track are covered with an insulating layer on which is formed the connecting track, the insulating layer including two openings in which extend the two ends of the connecting track to respectively connect to the spiral and to the connection track.
7. The inductance of claim 1, wherein the substrate is glass.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An angle measurement system comprising:
a magnet coupled to a rotating member and adapted to provide a magnetic field which rotates with the rotating member about a rotational axis of the rotating member;
an integrated circuit angle sensor disposed within the magnetic field at a radially off-center position from the rotational axis and including:
first and second bridges of magneto resistive elements configured to respectively provide first and second signals representative of substantially orthogonal first and second directional components of the magnetic field and together representative of an angular position of the rotating member; and
a set of adjustment parameters for adjusting attributes of the first and second signals having values selected to minimize errors in the first and second signals.
2. The angle measurement system of claim 1, wherein the magnet comprises a ring magnet coupled about the rotating member at a position along shaft away from ends of the shaft.
3. The angle measurement system of claim 1, wherein the set of adjustment parameters have values selected to minimize errors in the first and second signals caused by non-uniformity of the magnetic field at the radially off-center position.
4. The angle measurement system of claim 1, wherein the set of adjustment parameters includes a first and a second amplitude parameter and a first and a second offset parameter for respectively adjusting an amplitude and an offset of the first and second signals.
5. The angle measurement system of claim 4, wherein the magnetoresistive elements comprise anisotropic magnetoresistive elements.
6. The angle measurement system of claim 4, wherein the set of adjustment parameters includes an offset parameter for one of the first and second signals to adjust a phase of the one of the first and second signals.
7. The angle measurement system of claim 6, wherein the magnetoresistive elements comprise giant magnetoresistive elements.
8. The angle measurement system of claim 1, wherein the first and second bridges are positioned adjacent to one another along a radius extending from the rotational axis and proximate to and in parallel with a surface of the magnet.
9. The angle measurement system of claim 1, wherein the integrated circuit is positioned at a radial distance from the axis of rotation which substantially minimizes variations in a magnitude of a position vector obtained from the first and second signals.
10. An integrated circuit for measuring an angular position of a rotating magnet field at a radially off-center position from an axis of rotation of the magnetic field, the integrated circuit comprising:
a first set of magnetoresistive elements and an associated first plurality of switches which can be operated to selectively interconnect different subsets of the first set of magnetoresistive elements to form a first sensing bridge at different positions within the integrated circuit, the first sensing bridge configured to provide a first signal representative of a first directional component of the magnetic field; and
a second set of magnetoresistive elements and an associated second plurality of switches which can be operated to selectively interconnect different subsets of the second set of magnetoresistive elements to form a second sensing bridge at different positions within the integrated circuit, the second sensing bridge configured to provide a second signal representative of a second directional component of the magnetic field;
wherein switches of the first and second pluralities of switches are operated such that the resulting first and second bridges are at positions within the integrated circuit that minimize errors in the first and second signals resulting from non-uniformity of the magnetic field at the radially off-center position.
11. The integrated circuit of claim 10, wherein the first and second bridges are at positions within the integrated circuit which substantially minimize magnitude variations of a vector based on the first and second signals.
12. The integrated circuit of claim 10, wherein the first and second bridges are adjacent to one another with the magnetic field along a radius extending from the rotational axis.
13. The integrated circuit of claim 10, wherein the first and second sets of magnetoresistive elements comprise giant magnetoresistive elements.
14. The integrated circuit of claim 10, wherein the first and second sets of magnetoresistive elements comprise anisotropic magnetoresistive elements.
15. A method for off-center measurement of an angular position of a rotating shaft, comprising:
providing a magnetic field which rotates with the shaft about an axis of rotation;
positioning an integrated circuit having first and second magnetoresistive sensing bridges within the magnetic field at a radially off-center position from the axis of rotation, the first and second magnetoresistive sensing bridges respectively providing first and second signals representative of first and second magnetic field directions, the integrated circuit having a set of adjustment parameters for modifying attributes of the first and second signals;
modifying values of the set of adjustment parameters until errors in the first and second signals are substantially minimized; and
determining an angular position of the shaft based on the first and second signals.
16. The method of claim 15, wherein the set of adjustment parameters includes a first and a second amplitude parameter and a first and a second offset parameter for respectively adjusting an amplitude and an offset of the first and second signals.
17. The method of claim 16, wherein the first and second magnetoresistive sensing bridges comprise anisotropic magnetoresistive elements.
18. The method of claim 16, wherein the set of adjustment parameters further includes an offset parameter to adjust a phase of one of the first and second signals, and wherein the first and second magnetoresistive sensing bridges comprise giant magnetoresistive elements.
19. The method of claim 15, including adjusting the radially off-center position until variations in a magnitude of a vector obtained from the first and second signals resulting from the non-uniformity of the magnetic field at the radially off-center position are substantially minimized.
20. The method of claim 15, wherein providing a magnetic field includes mounting a ring magnet about the rotating shaft away from ends of the shaft.
21. A method of calibrating an integrated circuit magnetoresistive angle sensor for measuring an angular position of a rotating shaft, the method comprising:
temporarily coupling a discrete angle sensor to the rotating shaft;
providing a test signal representative of the angular position of the rotating shaft via the discrete angle sensor;
positioning the integrated circuit in a magnetic field rotating with the rotating shaft at a radially off-center location from a rotational axis of the rotating shaft, the integrated circuit including a first and a second magnetoresistive sensing bridge respectively providing first and second signals representative of orthogonal first and second directional components of the magnetic field, and including a set of adjustment parameters for modifying attributes of the first and second signals;
determining a measured angular position of the rotating shaft from the first and second signals;
adjusting values of the set of parameters to modify attributes of the first and second signals until an error between the angular position provide by the test signal and the measured angular position from the integrated circuit is substantially minimized.
22. The method of claim 21, including adjusting values of the set of parameters to compensate for errors in the measured angular position resulting from non-uniformity of the magnetic field at the off-center position.
23. The method of claim 21, including:
determining a magnitude of a vector based on the first and second signals; and
adjusting the radial position of the integrated circuit until variations in the magnitude of the vector are substantially minimized.
24. The method of claim 23, wherein the integrated circuit includes a first set of magnetoresistive elements and an associated first plurality of switches which can be operated to selectively interconnect different subsets of the first set of magnetoresistive elements to form the first magnetoresistive sensing bridge at different positions within the integrated circuit, and a second set of magnetoresistive elements and an associated second plurality of switches which can be operated to selectively interconnect different subsets of the second set of magnetoresistive elements to form the second magnetoresistive sensing bridge at different positions within the integrated circuit, and wherein adjusting the radial position includes operating the first and second pluralities of switches such that the resulting first and second magnetoresistive sensing bridges are at positions within the integrated circuit that the variations in the magnitude of the vector are substantially minimized.
25. The method of claim 23, wherein the first and second magnetoresistive sensing bridges comprise giant magnetoresistive sensing elements.
26. The method of claim 23, wherein the first and second magnetoresistive sensing bridges comprise anisotropic magnetoresistive sensing elements.

What is claimed is:

1. A circuit design method for designing an integrated circuit device including conductive members with a multilayered structure connected to a gate insulating film of a transistor element, said method comprising the steps of:
calculating damage to said gate insulating film for each of a plurality of antenna units of said conductive members; and
if a cumulative sum of the calculated damage is greater than or equal to a predetermined value, changing the design of an integrated circuit device such the cumulative sum of the calculated damage becomes less than said predetermined amount.
2. A circuit design method for designing an integrated circuit device including conductive members with a multilayered structure connected to a gate insulating film of a transistor element, said method comprising the steps of:
calculating an antenna ratio Ri, for 1in, for each of n antenna units of said conductive members from an antenna size Mi, for 1in, for each of the n antenna units of said conductive members and an actual area of Sj of said gate insulating film from the equation:
RiMiSj
calculating individual damage Di , for 1in, for each of the n antenna units of said conductive members with respect to said actual area Sj of said gate insulating film from a maximum permissible antenna ratio Rmi, for 1in, for each of the n antenna units of said conductive members with respect to said actual area Sj of said gate insulating film from the equation:
Dif(RiRmi)
where f( ) is a predetermined function calculating a damage total amount DD1D2 . . . Dn acting on said gate insulating film from the preceding calculating results;
if said damage total amount D is greater than or equal to 1, changing the design of an integrated circuit device such the damage total amount D becomes less than 1.
3. A circuit design method according to claim 2, wherein said Di(RiRmi) is calculated from the equation:
Di(RiRmi)a
where a is a constant larger than 0.
4. A circuit design method according to claim 3, wherein said constant a satisfies the relationship:
0.5a1.8.
5. A circuit design method according to claim 2, further comprising the step of calculating the maximum permissible antenna ratio Rmi for each of the n antenna units of said conductive member for the actual area Sj of said gate insulating film when a maximum permissible antenna size M0i is defined for each of the n antenna units of said conductive members with respect to a reference area S0 of said gate insulating film from the equation:
Rmi(M0iS0)(S0Sj)b
where b is a predetermined constant.
6. A circuit design method according to claim 2, further comprising the step of calculating the maximum permissible antenna ratio Rmi for each of the n antenna units of said conductive member for the actual area Sj of said gate insulating film when a maximum permissible antenna size M0i is defined for each of the n antenna units of said conductive members with respect to a reference area S0 of said gate insulating film from the equation:
Rmi(M0iS0)(SjS0)
where , are predetermined constants.
7. A circuit design method according to claim 5, wherein said constant b satisfies the relationship:
2.0b0.8.
8. A circuit design method according to claim 6, wherein said constant , satisfies the relationship:
<, 0.92.2, 0.11.3.
9. A circuit design apparatus for use in design of an integrated circuit device including conductive members with a multilayered structure connected to a gate insulating film of a transistor element, comprising:
data input means for receiving, as data, an actual area Sj of said gate insulating film, a maximum permissible antenna ratio Rmi, for 1in, for each of n antenna units of said conductive members with respect to said area Sj, and an antenna size Mi, for 1in, for each of said antenna units;
ratio calculating means for calculating, in response to the data input to said data input means, an antenna ratio Ri, for 1in, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film from the equation:
RiMiSj;
individual calculation means for calculating individual damage Di, for 1in, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film from the equation:
Dif(RiRmi)
where f( ) is a predetermined function; and
total amount calculation means for calculating a damage total amount DD1D2 . . . Dn acting on said gate insulating film from the calculating results in said individual calculation means.
10. A circuit design apparatus according to claim 9, further comprising passfail determining means for indicating that design is faulty when said damage total amount D calculated by said total amount calculation means is equal to or greater than 1.
11. A circuit design apparatus according to claim 9, wherein said individual calculation means calculates said individual damage Di for each of the n antenna units of said conductive members from the equation:
Di(RiRmi)a
where a is a constant larger than 0.
12. An integrated circuit device comprising conductive members with a multilayered structure connected to a gate insulating film of a transistor element,
wherein a maximum permissible antenna ratio Rmi, for 1in, is set for each of n antenna units of said conductive members with respect to an actual area Sj of said gate insulating film; and
an antenna size Mi, for 1in, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film satisfies the relationship:
f((MiSj)Rmi)<1
where f( ) is a predetermined function.
13. An integrated circuit device comprising conductive members with a multilayered structure connected to a gate insulating film of a transistor element,
wherein a maximum permissible antenna ratio Rmi, for 1in, is set for each of n antenna units of said conductive members with respect to an actual area Sj of said gate insulating film; and
an antenna size Mi, for 1in, for each of the n antenna units of said conductive members with respect to the actual area Sj of said gate insulating film satisfies the relationship:
((MiSj)RMi)a<1
where a is a constant larger than 0.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A system for casting an assay matrix, comprising:
a first plate and a second plate positioned substantially parallel to one another for receiving in between the plates a mold for casting the assay matrix;
wherein the mold comprises a frame having a first side and a second side, and a first film that covers the first side of the frame;
wherein the mold forms at least part of a chamber for receiving a material for casting the assay matrix;
wherein a passageway is provided into the chamber that is suitable for introduction of the material for casting into the chamber; and
wherein the mold is removable from the plates.
2. The system of claim 1, wherein the mold further comprises a second film that covers the second side of the frame
3. The system of claim 2, wherein at least one of the first film or the second film is made of a plastic material.
4. The system of claim 1, wherein the passageway comprises a first orifice in the first plate and a second orifice in the first film, and wherein the first and second orifices are collocated.
5. The system of claim 1, wherein the frame comprises a plurality of inner walls and a plurality of outer walls.
6. The system of claim 5, wherein the inner walls form a closed contour.
7. The system of claim 6, wherein the frame comprises at least three inner walls.
8. The system of claim 1, wherein one of the plates is configured for changing the temperature of the material.
9. The system of claim 8, wherein one of the plates is configured for transferring heat to the to material.
10. The system of claim 8, wherein one of the plates is configured for cooling the material.
11. The system of claim 8, wherein at least one of the plates is a metallic plate.
12. The system of claim 8, further comprising a biasing structure urging at least one of the plates in the direction of the other plate.
13. The system of claim 4, further comprising a device for guiding the material through the first orifice, into the second orifice, and into the chamber.
14. The system of claim 10, further comprising a device for injecting the material into the device for guiding.
15. The system of claim 1, further comprising a device for delivering the material into the chamber, wherein the device applies a positive pressure to the material.
16. The system of claim 11, wherein the material is a liquid gel material.
17. A method of making an assay matrix, comprising:
providing two substantially parallel plates;
providing an assay matrix casting mold comprising a frame placed between two films, wherein the mold forms at least part of a chamber for receiving a material for casting the assay matrix;
placing the mold between the two plates, wherein the mold is removable from the plates;
providing a passageway into the chamber that is suitable for introduction of the material into the chamber; and
introducing the material into the chamber.
18. The method of claim 17, wherein at least one of the films and at least one of the plates each comprises an orifice for allowing the material into chamber.
19. The method of claim 17, further comprising applying pressure to at least one of the plates in the direction of the other plate.
20. The method of claim 17, further comprising changing the temperature of the material through at least one of the plates.
21. The method of claim 20, wherein changing the temperature comprises heating the material.
22. The method of claim 20, wherein changing the temperature comprises cooling the material.
23. The method of claim 20, wherein the material is a liquid gel material.
24. An apparatus for aiding in the casting and handling of an assay matrix, where plates are used for casting of the assay matrix, comprising:
a frame, having a plurality of inner and outer walls, positioned between two films;
wherein the plurality of inner walls and the two films are configured to form a chamber for receiving a material for casting an assay matrix;
a passageway into the chamber for injection of the material; and
wherein the frame is removable from the plates.
25. The apparatus of claim 24, wherein at least one of the films is configured with an orifice for receiving the material.
26. The apparatus of claim 24, wherein the frame is configured with an asymmetry to indicate orientation.
27. The apparatus of claim 24, wherein the frame is configured with one or more notches for positioning the frame in a device for casting the assay matrix.
28. The apparatus of claim 24, wherein the frame is configured with one or more notches for positioning the frame on a substrate.
29. The apparatus of claim 24, further comprising an assay matrix placed in the chamber.
30. The apparatus of claim 29, wherein the assay matrix comprises a gel matrix.
31. A system for performing an assay, comprising:
an assay matrix assembly comprising a gel slab laterally bounded by a frame and covered on at least a top side or a bottom side by a removable film; and
a planar substrate substantially sized and shaped to mate with the assay matrix assembly upon removal of the film such that diffusion of at least one assay agent can take place between the gel slab and the planar substrate.
32. The system of claim 31, wherein the gel slab contains at least one reagent for performing the assay.
33. The system of claim 32, wherein the substrate comprises an array of diffusible materials, the diffusible materials at least potentially capable of activity with the at least one reagent.
34. The system of claim 33, wherein the diffusible materials diffuse into gel slab.
35. The system of claim 34, wherein the diffusible materials are chemical compounds.