Author: claimsbot

1. An vehicle configured to collect energy from the sun, comprising;
a plurality of wheels;
a vehicle chassis configured to hold at least one passenger, the chassis including at least one upwardly facing solar energy receiving device;
an adjustable frame supported upon the wheels, the frame configured to be selectively elevated at one end of the chassis to adjustably orient the solar energy receiving device with respect to the sun; and
an adjustment mechanism configured to adjust the frame so as to adjustably orient the solar energy receiving device with respect to the sun.
2. The vehicle as specified in claim 1 wherein the vehicle chassis has a plurality of panels, at least one said panel comprising the energy receiving device.
3. The vehicle as specified in claim 2 wherein the vehicle chassis has at least one side panel comprising the energy receiving device, the side panel configured to be selectively oriented with respect to the sun and adjust an efficiency of energy receiving device.
4. The vehicle as specified in claim 3 wherein the side panel has a concave surface configured to face the sun.
5. The vehicle as specified in claim 4 wherein the concave surface is parabolic.
6. The vehicle as specified in claim 3 wherein the vehicle chassis has a pair of opposing side panels each comprising the energy receiving device, each said side panel being concave and configured to be selectively oriented and face the sun and adjust the efficiency of the energy receiving device.
7. The vehicle as specified in claim 6 further comprising a photovoltaic cell, wherein each said concave side panel has a reflective surface configured to direct received sunlight to the photovoltaic cell.
8. The vehicle as specified in claim 3 wherein the at least on side panel has photovoltaic cells configured to receive sunlight.
9. The vehicle as specified in claim 1 wherein the adjustable frame is generally configured as a triangle with a horizontally extending base member, an upwardly extending member coupled to the base member at an adjustment point, and a hypotenuse member coupled to and extending between the base member and the upwardly extending member and opposite the adjustment point.
10. The vehicle as specified in claim 9 wherein the adjustment mechanism is configured to adjust the length of the upwardly extending member.
11. The vehicle as specified in claim 10 wherein the vehicle chassis has at least one side panel comprising the energy receiving device, the side panel configured to be selectively oriented with respect to the sun and adjust the efficiency of solar energy collection.
12. The vehicle as specified in claim 11 wherein the side panel has a concave surface configured to face the sun.
13. The vehicle as specified in claim 12 wherein the concave surface is parabolic.
14. The vehicle as specified in claim 11 wherein the vehicle chassis has a pair of opposing side panels each comprising the energy receiving device, each said side panel being concave and configured to be selectively oriented and face the sun and adjust the efficiency of solar energy collection.
15. The vehicle as specified in claim 14 wherein a rear said wheel is disposed proximate the adjustment point, and at least one front said wheel is disposed proximate where the base member and the hypotenuse member are coupled such that the vehicle can be rotated in a circle about a point proximate the front wheel.
16. The vehicle as specified in claim 15 comprising a pair of front said wheels with an axle therebetween, wherein the vehicle is configured to be rotated in a circle about one of the front wheels or at a point along the axle.
17. The vehicle as specified in claim 14 wherein the opposing side panels are configured to be unfolded downwardly from the hypotenuse member.
18. The vehicle as specified in claim 6 wherein each said side panel is parabolic and is focused at a different focal point.
19. The vehicle as specified in claim 6 wherein one said side panel abuts the other said side panel to form a single parabolic surface having a single focal point.
20. The vehicle as specified in claim 7 wherein the vehicle has a roof panel, wherein the photovoltaic cell is positioned above the roof.
21. The vehicle as specified in claim 6 wherein the vehicle has a roof panel with an underside configured with photovoltaic cells configured to receive energy from the sun.
22. The vehicle as specified in claim 10 wherein the adjustment mechanism is configured to adjust the length of the horizontally extending base member.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A bipolar semiconductor device including:
a substrate which is to serve as a collector and in which a surface having a specified off-angle from a (000-1) carbon surface of a crystal of a first-conductive-type silicon carbide semiconductor whose base material is silicon carbide, which is a compound of carbon and silicon, is formed;
a drift layer which is formed on a crystal growth surface of the substrate at a specified film growth rate by epitaxial growth of a silicon carbide, where the surface of the substrate having the specified off-angle is taken as the crystal growth surface of the substrate;
a first-conductive-type grown layer formed on the drift layer;
a second-conductive-type emitter layer formed on the first-conductive-type grown layer;
a contact region formed by ion implantation into the first-conductive-type grown layer via a through hole formed in the second-conductive-type emitter layer; and
a gate electrode formed via an insulating film on the first-conductive-type grown layer and the second-conductive-type emitter layer.

What is claimed is:

1. A semiconductor device, comprising:
a lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element;
a shielding film formed on said lower layer for shielding an energy beam used for detecting a positional detection mark; and
an upper layer including a positional detection mark formed on said shielding film.
2. The semiconductor device as recited in claim 1, wherein
said shielding film has a substantially flat upper surface.
3. The semiconductor device as recited in claim 1, wherein
said shielding film is a metal film.
4. The semiconductor device as recited in claim 3, wherein
said metal film is an aluminum film.
5. The semiconductor device as recited in claim 3, wherein
said metal film has a substantially flat upper surface.
6. The semiconductor device as recited in claim 1, wherein
said lower layer includes an insulating film, and
the positional detection mark included in said lower layer is a groove formed in said insulating film.
7. The semiconductor device as recited in claim 6, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
8. The semiconductor device as recited in claim 6, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
9. The semiconductor device as recited in claim 6, wherein
said shielding film is a metal film.
10. The semiconductor device as recited in claim 1, wherein
said lower layer includes a lower layer metal film, and
the positional detection mark included in said lower layer is a groove formed in said lower layer metal film.
11. The semiconductor device as recited in claim 10, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
12. The semiconductor device as recited in claim 10, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
13. The semiconductor device as recited in claim 1, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
14. The semiconductor device as recited in claim 1, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
15. The semiconductor device as recited in claim 1, wherein
said positional detection mark is formed by a polysilicon film.
16. A semiconductor device, comprising:
a lower layer including at least one of a positional detection mark and a quality testing element;
an isolation insulating film formed on said lower layer; and
an upper layer formed on said isolation insulating film and including at least one selected from the group consisting of a quality testing element, an external electrode, and a dummy layer.
17. The semiconductor device as recited in claim 16, wherein
said lower layer includes an insulating film, and
the positional detection mark included in said lower layer is a groove formed in said insulating film.
18. The semiconductor device as recited in claim 16, wherein
said lower layer includes a metal film, and
the positional detection mark included in said lower layer is a groove formed in said metal film.
19. A method of manufacturing a semiconductor device, comprising the steps of:
forming a lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element;
forming a shielding film for shielding an energy beam used for detecting a positional detection mark on said lower layer; and
forming an upper layer including a positional detection mark on said shielding film.
20. The method as recited in claim 19, further comprising the steps of:
forming an interlayer insulating film between said lower layer and said shielding film; and
planarizing an upper surface of said interlayer insulating film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of manufacturing a GaN-based light emitting diode (LED) comprising:
preparing a GaN substrate;
sequentially forming an active layer and a p-type nitride semiconductor layer on a surface of the GaN substrate having Ga-polarity through an epitaxial growth method;
forming a p-electrode on the p-type nitride semiconductor layer;
forming a mask on a surface of the GaN substrate having N-polarity, the mask defining a surface-irregularity formation region;
wet-etching portions of the second surface of the GaN substrate having N-polarity by using the mask as an etching mask such that standardized surface irregularities are formed; and
forming an n-electrode on the GaN substrate having the surface irregularities formed thereon,
wherein the wet-etching of the GaN substrate is performed until an end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets an end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface, and
wherein when the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, an angle of 60 to 70 degrees is formed between the adjacent surfaces of the GaN substrate.
2. The method according to claim 1,
wherein the mask is formed of one or more materials selected from the group of formed of photoresist, SiO2, SiN, Au, Cr, Ni, Pd, Pt, Cu, Ag, and Ti.
3. The method according to claim 1,
wherein the wet-etching is performed by using, as an etching solution, any one material selected from the group of a mixed solution, in which KOH and NaOH are mixed with H2O or ethylene glycol, H2SO4, and H3PO4.