Author: claimsbot

What is claimed is:

1. A process for cracking and further treating hydrocarbons, said process comprising:
contacting a first hydrocarbon feed stream with catalyst to yield cracked hydrocarbons and spent catalyst;
separating said spent catalyst from said cracked hydrocarbons in a separator section;
regenerating at least a portion of said spent catalyst to provide regenerated catalyst; and
contacting a second hydrocarbon feed stream with regenerated catalyst in a reaction zone under flow conditions including a superficial vapor velocity of greater than or equal to 0.6 ms (1.8 fts) and a slip ratio of greater than or equal to 2.5 to yield upgraded hydrocarbons and spent catalyst.
2. The process of claim 1 wherein the density in the reaction zone is 48 to 320 kgm3 (3.0 to 20 lbft3).
3. The process of claim 1 wherein the superficial vapor velocity in the reaction zone is 1.3 to 3.7 ms (4 to 12 fts).
4. The process of claim 1 wherein the mixture of catalyst and vapor in the reaction zone is homogeneous.
5. The process of claim 1 further comprising separating said upgraded hydrocarbons from said spent catalyst in a second separator that is distinct from the first separator; and regenerating a portion of said spent catalyst in said regenerator.
6. The process of claim 5 wherein said spent catalyst is stripped before it is regenerated.
7. The process of claim 1 wherein naphtha has the greatest concentration in said second hydrocarbon feed stream.
8. The process of claim 1 wherein said second hydrocarbon feed stream is derived from said cracked hydrocarbons.
9. A process for treating a hydrocarbon stream including at least a portion of effluent from an FCC reactor, said process comprising:
contacting said hydrocarbon stream with catalyst in a reaction zone under conditions that promote homogeneous mixing of catalyst and hydrocarbons and a slip ratio of greater than or equal to 3.0 to yield an upgraded hydrocarbon stream and spent catalyst.
10. The process of claim 9 further comprising: separating said spent catalyst from said cracked hydrocarbons in a separator section and regenerating at least a portion of said spent catalyst to provide regenerated catalyst.
11. The process of claim 9 wherein conditions in said reaction zone further include a superficial vapor velocity of greater than or equal to 0.6 ms (1.8 fts).
12. The process of claim 9 wherein the density in the reaction zone is 48 to 320 kgm3 (3.0 to 20 lbft3).
13. The process of claim 9 wherein the superficial vapor velocity in the reaction zone is 1.3 to 3.7 ms (4 to 12 fts).
14. An apparatus for the contacting of hydrocarbons with catalyst, said apparatus comprising:
a reactor vessel including at least one reactor communicating with said reactor vessel, a diluent nozzle communicating with said reactor vessel and a feed nozzle communicating with said reactor at a first end of said reactor and a second end of said reactor having a reduced cross-sectional area relative to said reactor, and
a separator vessel including a transport conduit communicating with said second end of said reactor, said transport conduit having a discharge opening communicating with said separator vessel.
15. The apparatus of claim 14 wherein said reactor vessel includes a plurality of reactors and each reactor communicates with said transport conduit through an outlet conduit.
16. The apparatus of claim 15 wherein the transport conduit has cross-sectional area that is smaller than the aggregate cross-sectional area of said plurality of reactors.
17. The apparatus of claim 14 wherein said separator vessel includes a stripping section surrounding said transport conduit.
18. The apparatus of claim 14 wherein said discharge opening is on the end of a swirl tube.
19. The apparatus of claim 14 wherein said separator vessel communicates with an external cyclone.
20. The apparatus of claim 14 wherein said apparatus is incorporated into an FCC reactor.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for digital transmission using an amplitude modulation (AM) transmitter comprising:
operating an output stage of the AM transmitter in a linear mode;
correcting a supply voltage of the output stage in the linear mode as a function of an instantaneous drive so as to improve an efficiency, the correcting being performed by:
operating a modulator of the AM transmitter as a switched-mode power supply unit so as to deliver a corrected supply voltage to the output stage; and
scanning an envelope of a complex modulated data signal so as to control the correcting, a time constant during the scanning of the envelope enabling an immediate following of a rise in the envelope; and
delaying, after the scanning, the complex modulated data signal so as to perform the correcting during the delaying so as to prevent an overdriving of the output stage.
2. The method as recited in claim 1 wherein the overdriving is a short-duration overdriving.
3. The method as recited in claim 1 wherein the time constant during the scanning is equal for a rise and a decay of the envelope.
4. The method as recited in claim 1 wherein the modulator is at least one of a pulse duration modulator and a pulse step modulator.

1. A magnetic element comprising:
a channel layer;
a first magnetic electrode which is in contact with the channel layer;
a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
a first electrode which is connected to the first magnetic electrode;
a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode;
a second magnetic layer;
a second intermediate layer which is formed between the first magnetic layer and the second magnetic layer;
a third electrode which is connected to the first magnetic layer; and
a fourth electrode which is connected to the second magnetic layer, the third electrode and the fourth electrode supplying a second signal to control a magnetization direction of the first magnetic layer, and
in which a magnetic coupling acts between the first magnetic electrode and the first magnetic layer through the first intermediate layer.
2. The element according to claim 1, wherein
the second signal is supplied by spin-polarized electrons which are injected to one of the first magnetic layer and the second magnetic layer, and
the magnetization direction of the first magnetic layer is controlled by a direction of injection of the spin-polarized electrons.
3. The element according to claim 1, wherein
the second signal is supplied by a voltage applied between the first magnetic layer and the second magnetic layer, and
the magnetization direction of the first magnetic layer is controlled by changing a magnetic coupling between the first magnetic layer and the second magnetic layer by a magnitude of the voltage.
4. The element according to claim 1, wherein the first intermediate layer is essentially made of an insulating magnetic material to transfer parallelly the magnetization direction of the first magnetic layer to the magnetization direction of the first magnetic electrode.
5. The element according to claim 1, wherein the first intermediate layer is essentially made of an insulating nonmagnetic material to transfer parallelly or antiparallelly the magnetization direction of the first magnetic layer to the magnetization direction of the first magnetic electrode.
6. The element according to claim 1, wherein the first intermediate layer is essentially made of an insulating nonmagnetic material to transfer antiparallelly the magnetization direction of the first magnetic layer to the magnetization direction of the first magnetic electrode.
7. The element according to claim 1, wherein a microwave is generated from the first magnetic layer by causing precession of the magnetization of the first magnetic layer, and the magnetization direction of the first magnetic electrode is controlled by the microwave.
8. The element according to claim 1, wherein
the channel layer is a tunnel barrier layer, and
a tunnel current or voltage serving as the first signal is changed by the magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
9. The element according to claim 1, in which the channel layer is a metal layer,
which further comprises a fifth electrode connected to the channel layer, and
in which one of a voltage and a current is detected, the one of the voltage and current being generated between the second magnetic electrode and the channel layer in accordance with the magnetic arrangement of the first magnetic electrode and the second magnetic electrode by supplying one of a current and a voltage between the first magnetic electrode and the fifth electrode.
10. The element according to claim 9, further comprising a compound layer which is provided between the second magnetic electrode and the channel layer and contains at least one of oxygen, nitrogen, and fluorine.
11. The element according to claim 9, wherein
the fifth electrode has a first electrode portion and a second electrode portion,
the first electrode portion is used to supply one of the current and the voltage between the first magnetic electrode and the fifth electrode, and
the second electrode portion is used to detect one of the voltage and the current generated between the second magnetic electrode and the channel layer in accordance with the magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
12. The element according to claim 1, wherein the first magnetic electrode is essentially made of one of a magnetic material and a magnetic semiconductor which exhibits magnetic fluctuation at room temperature.
13. A magnetic element comprising:
a channel layer;
a first magnetic electrode which is in contact with the channel layer;
a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
a first electrode which is connected to the first magnetic electrode;
a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode,
the channel layer is a semiconductor layer and further comprises a gate electrode which is provided on the semiconductor layer via a second insulating layer, or
the channel layer is a layer having a conductive portion in a third insulating layer and further comprises a gate electrode which is provided on the third insulating layer.
14. A magnetic signal processing device comprising a magnetic element,
the magnetic element comprising:
a channel layer;
a first magnetic electrode which is in contact with the channel layer;
a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
a second magnetic layer to transfer magnetization to the second magnetic electrode;
a second intermediate layer which is provided between the second magnetic layer and the second magnetic electrode and has a second insulating layer; and
a first electrode which is connected to the first magnetic electrode; and
a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode, and a magnetization direction of the second magnetic layer being transferred to a magnetization direction of the second magnetic electrode by a magnetic coupling which acts between the second magnetic electrode and the second magnetic layer through the second intermediate layer.
15. The device according to claim 14, wherein arithmetic processing of an exclusive OR or an inverted logic of an exclusive OR is executed by inputting a first input signal of 1 or 0 to the first magnetic layer and a second input signal of 0 or 1 to the second magnetic layer, and an execution result is output as the first signal.
16. A magnetic signal processing device comprising a magnetic element,
the magnetic element comprising:
a channel layer;
a first magnetic electrode which is in contact with the channel layer;
a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode;
a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer;
a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode;
a second magnetic layer to transfer magnetization to the second magnetic electrode;
a second intermediate layer which is provided between the second magnetic layer and the second magnetic electrode and has a second insulating layer;
a first electrode which is connected to the first magnetic electrode; and
a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode, negative or affirmative arithmetic processing being executed by inputting an input signal of 1 or 0 to the first magnetic layer, and an execution result being output as the first signal.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A wideband communications system including:
a digital predistorter (DPD) operable to receive an input signal, wherein the DPD is characterized by a first bandwidth;
a filter characterized by a second bandwidth coupled to the output of the DPD;
a digital-to-analog converter coupled to the output of the filter;
a modulator coupled to the output of the digital-to-analog converter;
a power amplifier coupled to the output of the modulator;
a band-pass filter characterized by a third bandwidth coupled to the output of the power amplifier;
a down-converter coupled to the output of the band-pass filter; and
an analog-to-digital converter (ADC) coupled to the output of the down-converter, wherein the ADC is characterized by a sampling rate value less than a value of the first bandwidth.
2. The wideband communications system of claim 1 wherein the ADC is characterized by a sampling rate value less than one-third the value of the first bandwidth.
3. The wideband communications system of claim 1 wherein the third bandwidth is less than the first bandwidth.
4. The wideband communications system of claim 3 wherein the third bandwidth is substantially equal to the second bandwidth.
5. The wideband communications system of claim 1 wherein the band-pass filter comprises a low power narrowband band-pass filter.
6. The wideband communications system of claim 1 wherein the filter comprises a narrowband digital filter.
7. The wideband communications system of claim 1 wherein the band-pass filter comprises a radio frequency (RF) filter.
8. The wideband communications system of claim 1 wherein the band-pass filter comprises an analog lower power narrowband intermediate frequency (IF) filter.
9. A communications system comprising:
a digital predistorter (DPD) operable to receive an input signal, wherein the input signal is characterized by a bandwidth of 20 MHz and the DPD is characterized by a bandwidth of greater than 100 MHz;
a digital filter coupled to the output of the DPD, wherein the digital filter is characterized by a bandwidth between 30 MHz and 50 MHz;
a digital-to-analog converter coupled to the output of the digital filter;
a modulator coupled to the output of the digital-to-analog converter;
a power amplifier coupled to the output of the modulator;
a radio frequency (RF) band-pass filter coupled to the output of the power amplifier and characterized by a bandwidth less than 100 MHz; and
an analog-to-digital converter (ADC) coupled to the output of the RF band-pass filter, wherein the ADC is characterized by a sampling rate less than or equal to 100 Msps.
10. The communications system of claim 9 wherein the bandwidth of the RF band-pass filter is between 30 MHz and 50 MHz.
11. The communications system of claim 9 wherein the sampling rate is between 60 Msps and 100 Msps.
12. A communications system comprising:
a digital predistorter (DPD) operable to receive an input signal, wherein the input signal is characterized by a bandwidth of 20 MHz and the DPD is characterized by a bandwidth of greater than 100 MHz;
a digital filter coupled to the output of the DPD, wherein the digital filter is characterized by a bandwidth between 30 MHz and 50 MHz;
a digital-to-analog converter coupled to the output of the digital filter;
a modulator coupled to the output of the digital-to-analog converter;
a power amplifier coupled to the output of the modulator;
an intermediate frequency (IF) band-pass filter coupled to the output of the power amplifier and the output of a down-converter, wherein the IF band-pass filter is characterized by a bandwidth less than 100 MHz; and
an analog-to-digital converter (ADC) coupled to the output of the IF band-pass filter, wherein the ADC is characterized by a sampling rate less than or equal to 100 Msps.
13. The communications system of claim 12 wherein the bandwidth of the IF band-pass filter is between 30 MHz and 50 MHz.
14. The communications system of claim 12 wherein the sampling rate is between 60 Msps and 100 Msps.
15. A method of operating a communications system, the method comprising:
receiving a signal at a digital predistorter (DPD);
introducing predistortion to the signal using the DPD;
filtering the predistorted signal using a digital filter;
converting the filtered signal to an analog signal;
modulating the analog signal;
amplifying the modulated signal;
coupling a portion of the amplified signal to provide a feedback signal;
filtering the feedback signal using a band-pass filter;
downconverting the filtered feedback signal;
converting the downconverted signal to a digital signal; and
providing the digital signal to the DPD.
16. The method of claim 15 wherein filtering the predistorted signal is performed over a filter bandwidth less than the bandwidth of the DPD.
17. The method of claim 16 wherein the filter bandwidth is between 30 MHz and 50 MHz.
18. The method of claim 17 wherein filtering the feedback signal using a band-pass filter is performed over a band-pass bandwidth less than the bandwidth of the DPD.
19. The method of claim 16 wherein the band-pass bandwidth is between 30 MHz and 50 MHz.
20. The method of claim 15 wherein converting the downconverted signal is performed at a sampling rate less than twice the bandwidth of the DPD.
21. The method of claim 20 wherein the sampling rate is between 60 Msps and 100 Msps.