Author: claimsbot

1. A method for fabricating a transistor, the method comprising:
providing a silicon layer above a substrate, the silicon layer being separated from the substrate by one or more layers;
forming a first layer on and in contact with the silicon layer, the first layer comprising a high dielectric constant material;
forming a second layer and in contact with the first layer, the second layer comprising a metal or metal alloy;
forming a third layer on the second layer, the third layer comprising silicon or polysilicon;
etching the first, second, and third layers so as to form first, second, and third layers of a gate stack;
depositing an encapsulation layer, the encapsulation layer including a horizontal portion in contact with the silicon layer and a vertical portion that is located on and in contact with sidewalls of the gate stack;
after depositing the encapsulation layer, depositing one spacer layer above and in contact with the horizontal portion of the encapsulation layer and adjacent to and in contact with the vertical portion of the encapsulation layer,
wherein depositing the one spacer layer comprises
depositing a first spacer layer above the horizontal portion of the encapsulation layer and adjacent to the vertical portion of the encapsulation layer, and
after depositing the first spacer layer, depositing a second spacer layer;

after depositing the spacer layer, etching the encapsulation layer and the one spacer layer so as to form a spacer and an L-shaped gate encapsulation layer that is disposed on the sidewalls of the gate stack, the L-shaped gate encapsulation layer comprising a vertical portion covering and in contact with the sidewalls of the first, second, and third layers of the gate stack and a horizontal portion covering and in contact with a portion of the silicon layer that is adjacent to the gate stack, and the spacer being above and in contact with the horizontal portion of the L-shaped gate encapsulation layer and adjacent to and in contact with the vertical portion of the L-shaped gate encapsulation layer, the spacer extending from the vertical portion of the L-shaped gate encapsulation layer to the horizontal portion of the L-shaped gate encapsulation layer, the spacer comprising a vertical sidewall extending from a surface of the horizontal portion of the L-shaped gate encapsulation layer to a height above at least the second layer comprising the metal or metal alloy,
wherein etching the encapsulation layer and the at least one spacer layer further comprises
etching the first spacer layer and the second spacer layer so as to form the spacer, the spacer further comprising:
an L-shaped spacer layer that includes a vertical portion covering sidewalls of the vertical portion of the L-shaped gate encapsulation layer, and a horizontal portion covering the horizontal portion of the L-shaped gate encapsulation layer, where the L-shaped spacer layer is formed with a thickness that is less than a thickness of the L-shaped gate encapsulation layer; and
the second spacer layer disposed on sidewalls of the vertical portion of the L-shaped oxide layer and above the horizontal portion of the L-shaped oxide layer, wherein the L-shaped gate encapsulation layer, the L-shaped spacer layer, and the second spacer layer are formed with a combined width that is greater than a width of the gate stack;
after etching the encapsulation layer and the one spacer layer, performing an extension implantation to implant ions so as to form sourcedrain extensions in the silicon layer, the sourcedrain extensions not underlying the gate stack; and
after performing the extension implantation, performing a sourcedrain implantation and performing an anneal to implant and diffuse ions for source and drain regions in the silicon layer,
wherein the extension implantation and the sourcedrain implantation are two separate implantations, and
both the extension implantation and the sourcedrain implantation are performed after etching the encapsulation layer and the one spacer layer and while the spacer is present above the horizontal portion of the L-shaped gate encapsulation layer and adjacent to the vertical portion of the L-shaped gate encapsulation layer.
2. The method of claim 1, wherein a thickness of the L-shaped gate encapsulation layer is less than a thickness of the first layer of the gate stack.
3. The method of claim 1, wherein a thickness of the vertical portion of the L-shaped gate encapsulation layer is substantially equal to a thickness of the horizontal portion of the L-shaped gate encapsulation layer.
4. The method of claim 1, wherein depositing the encapsulation layer comprises performing molecular layer deposition (MLD), atomic layer deposition (ALD), low-pressure chemical vapor deposition (LPCVD), or rapid thermal chemical vapor deposition (RTCVD) to deposit a layer of nitride.
5. The method of claim 1, wherein the first spacer layer is an oxide layer, and where the second spacer layer is a nitride layer.
6. The method of claim 1, wherein the horizontal portion of the L-shaped gate encapsulation layer directly contacts the silicon layer.
7. The method of claim 1, wherein depositing an encapsulation layer is performed after etching the first, second, and third layers.
8. The method of claim 1, wherein portions of the source and drain regions underlie the spacer.
9. The method of claim 1, wherein etching the first, second, and third layers comprises performing a single etch that etches the first, second, and third layers and stops on the silicon layer, so as to form the gate stack in the single etch.
10. The method of claim 1, wherein the L-shaped gate encapsulation layer consists of a single layer.
11. The method of claim 1,
wherein the L-shaped gate encapsulation layer consists of a single encapsulation layer, the spacer consists of a single spacer layer, and
the single spacer layer of the spacer directly contacts the single encapsulation layer of the L-shaped gate encapsulation layer.
12. The method of claim 1,
wherein
the first spacer layer consists of SiO2.
13. The method of claim 1,
wherein
the first spacer layer does not comprise a high dielectric constant material and the second spacer layer comprises a nitride layer.
14. A non-transitory computer readable storage medium encoded with a program for fabricating a nFET transistor and a pFET transistor, the program comprising instructions for performing:
providing a buried oxide layer on and in contact with a single substrate, where the single substrate comprises an nFET region and a pFET region;
providing a silicon layer on and in contact with the buried oxide layer, the silicon layer being provided across both the nFET and pFET regions of the substrate;
depositing a silicon germanium layer on and in contact with the silicon layer;
forming a first layer on and in contact with the silicon germanium layer, the first layer comprising a high dielectric constant material, the first layer being provided across both the nFET and pFET regions of the substrate;
forming a second layer on and in contact with the first layer, the second layer comprising a metal or metal alloy and being provided across both the nFET and pFET regions of the substrate;
forming a third layer on the second layer, the third layer comprising silicon or polysilicon and being provided across both the nFET and pFET regions of the substrate;
etching the first, second, and third layers so as to form first, second, and third layers of a first gate stack in the nFET region and first, second, and third layers of a second gate stack in the pFET region;
depositing a nitride encapsulation layer, the nitride encapsulation layer including a horizontal portion in contact with the silicon layer and a vertical portion that is located on and in contact with sidewalls of the first and second gate stacks;
after depositing the nitride encapsulation layer, depositing at least one spacer layer above and in contact with the horizontal portion of the nitride encapsulation layer and adjacent to and in contact with the vertical portion of the nitride encapsulation layer,
wherein depositing the one spacer layer comprises
depositing a first spacer layer above the horizontal portion of the encapsulation layer and adjacent to the vertical portion of the encapsulation layer, and
after depositing the first spacer layer, depositing a second spacer layer;

after depositing the at least one spacer layer, etching the nitride encapsulation layer and the at least one spacer layer as part of a single etch, the etching forming a first spacer and a first L-shaped gate encapsulation layer that is disposed on the sidewalls of the first gate stack in the nFET region and a second spacer and a second L-shaped gate encapsulation layer that is disposed on the sidewalls of the second gate stack in the pFET region, the first and second L-shaped gate encapsulation layers each comprising a vertical portion covering the sidewalls of the first, second, and third layers of the first and second gate stacks, respectively, and a horizontal portion covering a portion of the silicon layer that is adjacent to the first and second gate stacks, respectively, and each of the first and second spacers being above and in contact with the horizontal portion of the first and second L-shaped gate encapsulation layers, respectively, and adjacent to and in contact with the vertical portion of the first and second L-shaped gate encapsulation layers, respectively, each of the first and second spacers extending from the vertical portion of the first and second L-shaped gate encapsulation layers, respectively, to the horizontal portion of the first and second L-shaped gate encapsulation layers, respectively, each of the first and second spacers comprising a vertical sidewall extending from a surface of the horizontal portion of the first and second L-shaped gate encapsulation layers, respectively, to a height above at least the second layer comprising the metal or metal alloy,
wherein etching the encapsulation layer and the at least one spacer layer further comprises
etching the first spacer layer and the second spacer layer so as to form the spacer, the spacer further comprising:
an L-shaped spacer layer that includes a vertical portion covering sidewalls of the vertical portion of the L-shaped gate encapsulation layer, and a horizontal portion covering the horizontal portion of the L-shaped gate encapsulation layer, where the L-shaped spacer layer is formed with a thickness that is less than a thickness of the L-shaped gate encapsulation layer; and
the second spacer layer disposed on sidewalls of the vertical portion of the L-shaped oxide layer and above the horizontal portion of the L-shaped oxide layer, wherein the L-shaped gate encapsulation layer, the L-shaped spacer layer, and the second spacer layer are formed with a combined width that is greater than a width of the gate stack;
after etching the nitride encapsulation layer and the at least one spacer layer, performing an extension implantation to implant ions so as to form sourcedrain extensions in the silicon layer, the sourcedrain extensions not underlying the first and second gate stacks; and
after performing the extension implantation, performing a sourcedrain implantation and performing an anneal to implant and diffuse ions for source and drain regions in the silicon layer,
wherein the extension implantation and the sourcedrain implantation are two separate implantations, and
both the extension implantation and the sourcedrain implantation are performed after etching the nitride encapsulation layer and the at least one spacer layer and while the first and second are present above the horizontal portion of the first and second L-shaped gate encapsulation layers, respectively, and adjacent to the vertical portion of the L-shaped gate encapsulation layers, respectively.
15. The non-transitory computer readable storage medium of claim 14, wherein a thickness of the first and second L-shaped gate encapsulation layers, respectively, is less than a thickness of the first layer of the gate stack.
16. The non-transitory computer readable storage medium of claim 14, wherein a thickness of the vertical portion of the first and second L-shaped gate encapsulation layers, respectively, is substantially equal to a thickness of the horizontal portion of the first and second L-shaped gate encapsulation layers, respectively.
17. The non-transitory computer readable storage medium of claim 14, wherein depositing the nitride encapsulation layer comprises performing molecular layer deposition (MLD), atomic layer deposition (ALD), low-pressure chemical vapor deposition (LPCVD), or rapid thermal chemical vapor deposition (RTCVD) to deposit a layer of nitride.
18. A method for fabricating a transistor, the method comprising:
providing a silicon layer above a substrate, the silicon layer being separated from the substrate by one or more layers;
forming a first layer on and in contact with the silicon layer, the first layer comprising a high dielectric constant material;
forming a second layer on and in contact with the first layer, the second layer comprising a metal or metal alloy;
forming a third layer on the second layer, the third layer comprising a conducting metal;
etching the first, second, and third layers so as to form first, second, and third layers of a gate stack;
depositing an encapsulation layer, the encapsulation layer including a horizontal portion in contact with the silicon layer and a vertical portion that is located on and in contact with sidewalls of the gate stack;
after depositing the encapsulation layer, depositing at least one spacer layer above and in contact with the horizontal portion of the encapsulation layer and adjacent to and in contact with the vertical portion of the encapsulation layer,
wherein depositing the one spacer layer comprises
depositing a first spacer layer above the horizontal portion of the encapsulation layer and adjacent to the vertical portion of the encapsulation layer, and
after depositing the first spacer layer, depositing a second spacer layer;

after depositing the at least one spacer layer, etching the nitride encapsulation layer and the at least one spacer layer so as to form a spacer and an L-shaped gate encapsulation layer that is disposed on the sidewalls of the gate stack, the L-shaped gate encapsulation layer comprising a vertical portion covering and in contact with the sidewalls of the first, second, and third layers of the gate stack and a horizontal portion covering and in contact with a portion of the silicon layer that is adjacent to the gate stack, and the spacer being above and in contact with the horizontal portion of the L-shaped gate encapsulation layer and adjacent to and in contact with the vertical portion of the L-shaped gate encapsulation layer, the spacer extending from the vertical portion of the L-shaped gate encapsulation layer to the horizontal portion of the L-shaped gate encapsulation layer, the spacer comprising a vertical sidewall extending from a surface of the horizontal portion of the L-shaped gate encapsulation layer to a height above at least the second layer comprising the metal or metal alloy,
wherein etching the encapsulation layer and the at least one spacer layer further comprises
etching the first spacer layer and the second spacer layer so as to form the spacer, the spacer further comprising:
an L-shaped spacer layer that includes a vertical portion covering sidewalls of the vertical portion of the L-shaped gate encapsulation layer, and a horizontal portion covering the horizontal portion of the L-shaped gate encapsulation layer, where the L-shaped spacer layer is formed with a thickness that is less than a thickness of the L-shaped gate encapsulation layer; and
the second spacer layer disposed on sidewalls of the vertical portion of the L-shaped oxide layer and above the horizontal portion of the L-shaped oxide layer, wherein the L-shaped gate encapsulation layer, the L-shaped spacer layer, and the second spacer layer are formed with a combined width that is greater than a width of the gate stack;
after etching the encapsulation layer and the at least one spacer layer, performing an extension implantation to implant ions so as to form sourcedrain extensions in the silicon layer, the sourcedrain extensions not underlying the gate stack; and
after performing the extension implantation, performing a sourcedrain implantation and performing an anneal to implant and diffuse ions for source and drain regions in the silicon layer,
wherein the extension implantation and the sourcedrain implantation are two separate implantations, and
both the extension implantation and the sourcedrain implantation are performed after etching the encapsulation layer and the at least one spacer layer and while the spacer is present above the horizontal portion of the L-shaped gate encapsulation layer and adjacent to the vertical portion of the L-shaped gate encapsulation layer.
19. The method of claim 18, wherein the third layer comprises tungsten or aluminum.
20. The method of claim 18, wherein the horizontal portion of the L-shaped gate encapsulation layer directly contacts the silicon layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A loudspeaker comprising:
an electro-acoustic transducer for converting electrical audio signals into sound waves;
a housing supporting the electro-acoustic transducer; and
a shutter supported by the housing and displaceable between a first, closed position in which the shutter substantially covers the transducer, and a second, open position in which the transducer is exposed.
2. The loudspeaker of claim 1, wherein the loudspeaker does not include a grille for protecting the transducer.
3. The loudspeaker of claim 1, wherein the shutter comprises at least one moveable blade.
4. The loudspeaker of claim 1, wherein the shutter comprises at least one rotatable blade.
5. The loudspeaker of claim 1, further comprising an electric motor, wherein displacement of the shutter is driven by the electric motor.
6. The loudspeaker of claim 5, further comprising control electronics coupled to the electric motor, wherein the control electronics are configured to receive a signal indicative of a power state of an associated audio system; and to drive the electric motor in response to the signal.
7. The loudspeaker of claim 6, wherein the control electronics comprise:
a processor coupled to the electric motor; and
instructions stored on a non-transitory computer-readable media that, when executed, cause the processor to:
receive a signal indicative of a power state of an associated audio system; and
drive the electric motor in response to signal.
8. The loudspeaker of claim 7, wherein the instructions, when executed, cause the processor to drive the electric motor to open the shutter to expose the electro-acoustic transducer when the processor receives a signal indicating that the associated audio system has been powered on.
9. The loudspeaker of claim 7, wherein the instructions, when executed, cause the processor to drive the electric motor to close the shutter when the processor receives a signal indicating that the associated audio system has been powered off.
10. The loudspeaker of claim 1, further comprising a proximity detector for detecting the presence of an object in proximity the electro-acoustic transducer, wherein the loudspeaker is configured to displace the shutter to the first, closed position in response to detecting the presence of an object in proximity to the electro-acoustic transducer.
11. The loudspeaker of claim 1, further comprising:
a proximity sensor for detecting the presence of an object in proximity to the electro-acoustic transducer;
an electric motor for driving displacement of the shutter; and
control electronics coupled to the proximity sensor and to the electric motor,
wherein the control electronics are configured to drive the electric motor to close the shutter when the control electronics receive a signal from the proximity sensor indicating that an object is in proximity to the electro-acoustic transducer.
12. The loudspeaker of claim 11, wherein the control electronics comprise:
a processor coupled to the proximity sensor and to the electric motor; and
instructions stored on a non-transitory computer-readable media that, when executed, cause the processor to:
drive the electric motor to close the shutter when the processor receives a signal from the proximity sensor indicating that an object is in proximity to the electro-acoustic transducer.
13. The loudspeaker of claim 12, wherein the instructions, when executed, cause the processor to automatically shut the electro-acoustic transducer off, such that no audio is rendered via the electro-acoustic transducer, until the shutter opens up again.
14. The loudspeaker of claim 1, wherein the shutter comprises a mechanical iris comprising a plurality of overlapping blades which are displaceable to open and close an aperture formed by the blades.
15. The loudspeaker of claim 1, wherein the loudspeaker is configured such that the shutter automatically opens when an associated audio system is powered on and automatically closes when the associated audio system is powered off.
16. The loudspeaker of claim 1, wherein the shutter is further displaceable between the second, open position and a third, open position, and wherein the loudspeaker is configured such that the shutter moves between the second, open position and the third, open position in response to changes in audio volume.
17. The loudspeaker of claim 16, wherein the loudspeaker is configured such that an aperture defined by the shutter increases in response to an increase in audio volume.
18. A vehicle audio system comprising:
a plurality of loudspeakers;
a head unit;
an audio amplifier for amplifying and filtering entertainment audio received from the head unit for distribution to a plurality of speakers positioned about the vehicle cabin,
wherein at least one of the plurality of loudspeakers is a shuttered loudspeaker comprising:
an electro-acoustic transducer for converting electrical audio signals into sound waves;
a housing supporting the electro-acoustic transducer; and
a shutter supported by the housing and displaceable between a first, closed position in which the shutter substantially covers the transducer, and a second, open position in which the transducer is exposed.
19. The vehicle audio system of claim 18, wherein the shuttered loudspeaker is disposed on an A-pillar in a vehicle cabin.
20. The vehicle audio system of claim 18, wherein the shuttered loudspeaker further comprises:
an electric motor for driving displacement of the shutter; and
a control electronics coupled to the electric motor,
wherein the control electronics are configured to drive the electric motor to control displacement of the shutter in response to signals received from the audio amplifier.
21. The vehicle audio system of claim 20, wherein the control electronics comprise:
a processor coupled to the electric motor; and
instructions stored on a non-transitory computer-readable media that, when executed, cause the processor to:
drive the electric motor to control displacement of the shutter in response to signals received from the audio amplifier.
22. The vehicle audio system of claim 18, wherein the shuttered loudspeaker further comprises:
a proximity sensor for detecting the presence of an object near the electro-acoustic transducer;
an electric motor for driving displacement of the shutter; and
control electronics coupled to the proximity sensor and to the electric motor,
wherein the control electronics are configured to drive the electric motor to close the shutter when the control electronics receives a signal from the proximity sensor indicating that an object is near the electro-acoustic transducer.
23. The vehicle audio system of claim 22, wherein the control electronics comprise:
a processor coupled to the proximity sensor and to the electric motor; and
instructions stored on a non-transitory computer-readable media that, when executed, cause the processor to:
drive the electric motor to close the shutter when the processor receives a signal from the proximity sensor indicating that an object is near the electro-acoustic transducer.
24. The vehicle audio system of claim 23, wherein the instructions, when executed, cause the processor to automatically shut the electro-acoustic transducer off, such that no audio is rendered via the electro-acoustic transducer, until the shutter opens up again.
25. The vehicle audio system of claim 18, wherein the shutter comprises a mechanical iris comprising a plurality of overlapping blades which are displaceable to open and close an aperture formed by the blades.

1. An image encoding method using color space estimation, which encodes a current pixel according to directionality of neighbor pixels and a size of a residual component, the method comprising:
encoding a pixel of a first color space;
selecting an estimation mode of the current pixel from a color space estimation mode and a space estimation mode by taking into account the directionality of the neighbor pixels respect to the current pixel of a second color space and the size of the residual component between a current pixel value and a neighbor pixel value;
calculating an estimation value according to the selected estimation mode; and
encoding a difference value of the calculated estimation value and the current pixel value.
2. The image encoding method of claim 1, wherein the directionality of the neighbor pixels is a horizontal direction or a vertical direction.
3. The image encoding method of claim 1, wherein the selecting of the estimation mode, when the estimation direction of the neighbor pixels is the space estimation and has a constant directionality and the estimation direction of the current pixel matches the constant direction of the neighbor pixels, selects the space estimation mode as the estimation mode.
4. The image encoding method of claim 1, wherein the selecting of the estimation mode comprises:
when the estimation direction of the neighbor pixels is the space estimation and has a constant directionality and the estimation direction of the current pixel does not match the constant direction of the neighbor pixels, selecting the estimation mode of the current pixel according to the size of the residual component.
5. The image encoding method of claim 4, wherein, when the size of the residual component is a first threshold, the estimation mode of the current pixel is the space estimation mode.
6. The image encoding method of claim 4, wherein, when the size of the residual component is a second threshold, the estimation mode of the current pixel is a combination of the color space estimation mode and the space estimation mode with a weight.
7. The image encoding method of claim 4, wherein, when the size of the residual component is a third threshold, the estimation mode of the current pixel is the color space estimation mode.
8. The image encoding method of claim 1, wherein the selecting of the estimation mode comprises:
when the estimation direction of the neighbor pixels with respect to the current pixel is the space estimation and has no constant direction, selecting the estimation mode of the current pixel according to the size of the residual component.
9. The image encoding method of claim 8, wherein, when the size of the residual component is a first threshold to a second threshold, the estimation mode of the current pixel is the space estimation mode.
10. The image encoding method of claim 8, wherein, when the size of the residual component is a second threshold to a third threshold, the estimation mode of the current pixel is a combination of the color space estimation mode and the space estimation mode.
11. The image encoding method of claim 1, wherein the selecting of the estimation mode comprises:
when the estimation direction of the neighbor pixels is the color space estimation, selecting the estimation mode of the current pixel according to the size of the residual component.
12. The image encoding method of claim 11, wherein, when the size of the residual component is a second threshold to a third threshold, the estimation mode of the current pixel is a combination of the color space estimation mode and the space estimation mode.
13. The image encoding method of claim 1, wherein the selecting of the estimation mode, when the estimation direction of the neighbor pixels combines the color space estimation and the space estimation, the estimation direction of the current pixel has no constant direction, and the size of the residual component is greater than a first threshold, combines the color space estimation mode and the space estimation mode as the estimation mode of the current pixel.
14. The image encoding method of claim 1, wherein, when the estimation mode combines the color space estimation mode and the space estimation mode, the estimation value is determined by the following equation:
Pnew=Pix(a)\u2212Px(1\u2212a)
where Pnew is the estimation value when the color space estimation mode and the space estimation mode are combined and used, Pix is a color space estimation value, Px is a space estimation value, a is a weight according to the color space estimation, and 1\u2212a is a weight according to the space estimation.
15. The image encoding method of claim 14, wherein the weight according to the space estimation is determined by an average value of a residual component size of the second color space.
16. The image encoding method of claim 14, wherein the weight according to the color space estimation is determined by an average value of a residual component size of the first color space.
17. The image encoding method of claim 1, wherein the size of the residual component is stored to an external memory.
18. A computer readable recording medium containing a computer program to execute an image encoding method for encoding a current pixel according to directionality of neighbor pixels and a size of a residual component,
the method comprising encoding a pixel of a first color space; selecting an estimation mode of the current pixel from a color space estimation mode and a space estimation mode by taking into account the directionality of the neighbor pixels respect to the current pixel of a second color space and the size of the residual component between a current pixel value and a neighbor pixel value; calculating an estimation value according to the selected estimation mode; and encoding a difference value of the calculated estimation value and the current pixel value.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A control system for a machine having an implement with at least one axis of rotation, the control system comprising:
a first lever having a first longitudinal axis, wherein a twist angle of the first lever about the first longitudinal axis is related to an articulation speed of an articulated joint of the machine;
a second lever having a second longitudinal axis, wherein a twist angle of the second lever about the second longitudinal axis is related to a rotational speed of the implement about the at least one axis of rotation; and
a plurality of operator control devices disposed on the first and second levers.
2. The control system of claim 1, wherein at least one of the first lever and the second lever is configured to tilt about at least one tilt axis, a steering direction of the machine being related to a tilt angle of the at least one of the first lever and the second lever about the at least one tilt axis.
3. The control system of claim 1, wherein the machine includes a steerable traction device configured to tilt with respect to a tilt plane, and a tilt speed of the steerable traction device relative to the tilt plane is related to an engagement position of at least one of the plurality of operator control devices.
4. The control system of claim 1, wherein at least one of the plurality of operator control devices is configured to place the articulated joint in a neutral articulation position.
5. The control system of claim 1, wherein the machine includes a plurality of driven traction devices and a differential gear mechanism that allows the plurality of driven traction devices to rotate at different speeds relative to each other, and at least one of the plurality of operator control devices is configured to selectively lock the differential gear mechanism and to cause the plurality of driven traction devices to rotate at a substantially uniform speed.
6. The control system of claim 1, wherein at least one of the first and second levers has an operator hand interface including:
a forward portion having a first longitudinal ridge corresponding to a joint of an operator’s fingers; and
an aft portion having a second longitudinal ridge corresponding to a joint between a thumb and palm of an operator’s hand.
7. The control system of claim 1, further including at least one guard disposed on at least one of the first and second levers and configured to impede movement of an operator’s hand towards at least one of the plurality of operator control devices.
8. The control system of claim 1, wherein the control system further includes a hand stabilizer proximally disposed to an end of at least one of the first and second levers, the hand stabilizer configured to provide leverage to an operator’s hand during manipulation of the at least one of the first and second levers.
9. The control system of claim 1, wherein the implement includes a second axis of rotation, and an orientation speed of the implement with respect to the second axis of rotation is related to a position of at least one of the plurality of operator control devices.
10. The control system of claim 1, wherein an articulation direction of a forward portion of the machine about an articulation joint is in the same direction as a twist direction of the first lever, and a rotation direction of the implement about the at least one axis of rotation is in the same direction as the twist direction of the second lever.
11. The control system of claim 1, wherein at least one of the first lever and the second lever is configured to tilt about at least one tilt axis, and a linear movement of at least a portion of the implement in a first direction is related to a tilt direction of the at least one of the first lever and the second lever about the at least one tilt axis.
12. The control system of claim 11, wherein the at least one of the first lever and the second lever is configured to tilt about a second tilt axis generally orthogonal to the first tilt axis wherein a linear movement of the implement in a second direction, generally orthogonal to the first direction, is related to a tilt direction of the at least one of the first and second levers about the second tilt axis.
13. The control system of claim 11, wherein a movement speed of the implement in a second direction, generally orthogonal to the first direction, is related to an engagement position of at least one of the plurality of operator control devices.
14. The control system of claim 1, wherein the machine includes a transmission having a range of output speed ratios selectable by at least one of the plurality of operator control devices.
15. The control system of claim 14, wherein at least one of the plurality of operator control devices is a three-way control device configured to toggle between a forward, reverse, and neutral condition of the transmission.
16. The control system of claim 1, wherein a first and a second of the plurality of operator control devices are recessed into one of the first and second levers, with a ridge separating the first and second of the plurality of operator control devices.
17. The control system of claim 1, wherein at least one of the plurality of control devices is configured to engage a throttle feature of the machine.
18. The control system of claim 17, wherein the throttle feature causes the throttle to move to a predetermined throttle position in response to the at least one of the plurality of control devices being moved to an engaged position.
19. The control system of claim 1, further including at least one four-way control device configured for movement in a first direction to cause a first implement movement and for movement in a second direction orthogonal to the first to cause a second implement movement.
20. The control system of claim 19, wherein the at least one four-way control device may be moved in a direction between the first and second directions to simultaneously cause both the first implement movement and the second implement movement.
21. A machine comprising:
a steerable traction device;
a driven traction device;
a frame having an articulated joint for articulately connecting the steerable traction device to the driven traction device;
a power source supported by at least one of the frame and the driven traction device;
a transmission operatively connected to the power source and configured to transmit power from the power source to the driven traction device, the transmission having a range of output speed ratios;
an implement operatively connected to the frame and having at least one axis of rotation; and
a control system comprising:
a first lever having a first longitudinal axis, wherein a twist angle of the first lever about the first longitudinal axis is related to an articulation speed of the machine;
a second lever having a second longitudinal axis, wherein:
a twist angle of the second lever about the second longitudinal axis is related to a rotational speed of the implement about the at least one axis, at least one of the first lever and the second lever being configured to tilt about at least one tilt axis, and
a steering direction of the machine is related to a tilt angle of the at least one of the first lever and the second lever about the at least one tilt axis;

a plurality of operator control devices disposed on the first and second levers, wherein:
the machine includes a steerable traction device configured to tilt with respect to a tilt a plane, a tilt speed of the steerable traction device relative to the tilt plane relating to an engagement position of at least one of the plurality of operator control devices,
an output speed ratio of the transmission is selectable by at least one of the plurality of operator control devices,
at least one of the plurality of operator control devices is configured to place the articulated joint in a neutral articulation position,
the machine includes a plurality of driven traction devices and a differential gear mechanism that allows the plurality of driven traction devices to rotate at different speeds relative to each other, and at least one of the plurality of operator control devices is configured to selectively lock the differential gear mechanism and to cause the plurality of driven traction devices to rotate at a substantially uniform speed, and
one of the plurality of operator control devices is configured to engage a throttle feature of the machine; and
at least one four-way control device configured for movement in a first direction to cause a first implement movement and for movement in a second direction orthogonal to the first direction to cause a second implement movement.
22. The machine of claim 21, wherein the implement includes a second axis of rotation, and an engagement position of at least one of the plurality of operator control devices is related to an orientation speed of the implement with respect to the second axis of rotation.
23. The machine of claim 21, wherein an articulation direction of a forward portion of the machine about an articulation joint is in the same direction as a twist direction of the first lever and a rotation direction of the implement about the at least one axis of rotation is in the same direction as the twist direction of the second lever.
24. The machine of claim 21, wherein at least one of the first lever and the second lever is configured to tilt about at least one tilt axis, and a linear movement of at least a portion of the implement in a first direction is related to a tilt direction of the at least one of the first lever and the second lever about the at least one tilt axis.
25. The machine of claim 24, wherein the at least one of the first lever and the second lever is configured to tilt about a second tilt axis generally orthogonal to the at least one tilt axis, and a linear movement of the implement in a second direction, generally orthogonal to the first direction, is related to a tilt direction of the at least one of the first and second levers about the second tilt axis.
26. The machine of claim 24, wherein a movement speed of the implement in a second direction, generally orthogonal to the first direction, is related to a position of at least one of the plurality of operator control devices.
27. The machine of claim 21, wherein one of the plurality of operator control devices includes a three-way control device configured to toggle between a forward, reverse, and neutral condition of the transmission.
28. The machine of claim 21, wherein the at least one four-way control device may be moved in a direction between the first and second directions to simultaneously cause both the first implement movement and the second implement movement.
29. A method of controlling a machine, comprising:
twisting a first lever through a first twist angle in one of a clockwise and counterclockwise direction to cause an articulation of an articulated joint of a machine such that a portion of the machine rotates about the articulated joint in the one of a clockwise and counterclockwise direction and at an articulation speed related to the first twist angle; and
twisting a second lever through a second twist angle in one of a clockwise and counterclockwise direction to cause a rotation of a implement about a first axis in the same one of a clockwise and counterclockwise direction and at a rotation speed related to the second twist angle,
wherein a plurality of operator control devices are disposed on the first and second levers.
30. The method of claim 29, further including tilting at least one of the first and second levers at a tilt angle about at least one tilt axis to steer a steerable traction device in a direction related to the tilting direction and by an amount related to the tilt angle.
31. The method of claim 29, further including manipulating at least one of the plurality of operator control devices to tilt a steerable traction device at an angle relative to a tilt plane, a tilt speed relative to the tilt plane corresponding to a position of the at least one of the plurality of operator control devices.
32. The method of claim 29, further including manipulating at least one of the plurality of operator control devices to place an articulation joint of the machine in a neutral articulation position.
33. The method of claim 29, further including manipulating at least one of the plurality of operator control devices to lock a differential gear mechanism of the machine and to cause all of a plurality of driven traction devices of the machine connected to the differential gear mechanism to rotate at a substantially uniform speed.
34. The method of claim 29, wherein the implement is a drawbar-circle-moldboard assembly that includes a blade and the method further includes manipulating at least one of the plurality of operator control devices to cause a rotation of the blade about a second axis, substantially orthogonal to the first axis, at a rotation speed related to an engagement position of the at least one of the plurality of operator control devices.
35. The method of claim 34, wherein the blade has a first end and a second end, the method further including tilting one of the first and second levers in a tilting direction and at a tilt angle to cause at least one of the first end and the second end to move in a direction related to the tilting direction and by at a speed corresponding to the tilt angle.
36. The method of claim 29, further including manipulating at least one of the plurality of operator control devices to select an output speed ratio of a transmission of the machine.
37. The method of claim 36, wherein the at least one of the plurality of operator control devices includes a three-position control device and the method further includes manipulating the three-position control device to toggle between a forward, reverse, and neutral condition of the transmission.
38. The method of claim 29, further including manipulating at least one of the plurality of operator control devices to move a throttle to a predetermined throttle position.
39. The method of claim 29, further including manipulating a four-way control device in a first direction to cause a first implement movement and manipulating the four-way control device in a second direction orthogonal to the first direction to cause a second implement movement.
40. The method of claim 39, further including moving the four-way control device in a direction between the first and second directions to simultaneously cause both the first implement movement and the second implement movement.