1. A method for manufacturing a conductor part for a connector unit, wherein the conductor part comprises a conductive core, an insulating sleeve and at least a first conductive layer arranged between the conductive core and the insulating sleeve, wherein the method comprises:
equipping at least one section of a radially inner surface of the insulating sleeve with the first conductive layer;
equipping at least one section of a radially outer surface of the insulating sleeve with at least a second conductive layer, wherein the second conductive layer is a metal layer or a conductive plastic layer; and
inserting the conducting core in the insulating sleeve before or after the equipping of the radially inner surface or the radially outer surface of the insulating sleeve with the first conductive layer or the second conductive layer, respectively.
2. The method of claim 1, wherein the equipping of the at least one section of the radially outer surface of the insulating sleeve comprises plating the metal layer onto the at least one section of the radially outer surface of the insulating sleeve, spraying the second conductive layer onto the at least one section of the radially outer surface of the insulating sleeve, or a combination thereof.
3. The method of claim 1, wherein the equipping of the at least one section of the radially inner surface of the insulating sleeve comprises plating the first conductive layer on the at least one section of the radially inner surface of the insulating sleeve, the equipping of the at least one section of the radially inner surface of the insulating sleeve comprises spraying the first conductive layer onto the at least one section of the radially inner surface of the insulating sleeve, the first conductive layer is a metal layer or a conductive plastic layer, or any combination thereof.
4. The method of claim 1, further comprising filling at least a radial space between the conductive core and the first conductive layer at the radially inner surface of the insulating sleeve with at least a mediator layer,
wherein the mediator layer has a material of a grease or an adhesive.
5. The method of claim 1, wherein the equipping of the at least one section of the radially inner surface of the insulating sleeve comprises connecting the first conductive layer to the at least one section of the radially inner surface of the insulating sleeve by an interference fit.
6. The method of claim 5, further comprising:
heating the insulating sleeve so that a diameter of the insulating sleeve expands;
inserting a tube out of a conductive material into an expanded diameter of the insulating sleeve;
connecting the insulating sleeve to the tube by cooling down the heated insulating sleeve, thus providing a fixed connection between the tube and the insulating sleeve, wherein the tube represents the first conductive layer.
7. The method of claim 5, further comprising providing another section of the radially inner surface of the insulating sleeve with at least one further conductive layer.
8. The method of claim of claim 7, wherein the at least one further conductive layer is a metal layer.
9. A conductor part of a connector unit for connecting at least two connected parts, wherein the conductor part comprises:
a conductive core;
an insulating sleeve;
at least a first conductive layer arranged between the conductive core and the insulating sleeve, wherein the first conductive layer is arranged at at least one section of an inner surface of the insulating sleeve;
at least a second conductive layer arranged at at least one section of an outer surface of the insulating sleeve, wherein the second conductive layer is a metal layer, a conductive plastic layer, or a combination thereof.
10. The conductor part of claim 9, wherein the first conductive layer is a metal layer, a conductive plastic layer, or a combination thereof.
11. The conductor part of claims 9, wherein the first conductive layer has a same base material as the insulating sleeve.
12. The conductor part of claim 11, wherein the first conductive layer is a layer out of a polymer material or a thermoset polymer material.
13. The conductor part of claim 11, wherein the inner surface of the insulating sleeve is a radially inner surface and comprises another section,
wherein the other section comprises at least one further conductive layer, and
wherein the at least one further conductive layer is a metal layer.
14. The conductor part of claim 9, wherein the first conductive layer and the second conductive layer have a thickness between 1 \u03bcm and 20 mm, when the first conductive layer and the second conductive layer are metal layers, the first conductive layer and the second conductive layer have a thickness between 1 \u03bcm and 40 \u03bcm, when the first conductive layer and the second conductive layer are conductive plastic layers, the first conductive layer and the second conductive layer have a thickness between 1 mm and 20 mm.
15. The conductor part of claim 14, wherein the first conductive layer and the second conductive layer have a thickness of between 5 \u03bcm and 15 mm.
16. The conductor part of claim 15, wherein the first conductive layer and the second conductive layer have a thickness of between 10 \u03bcm and 10 mm.
17. The conductor part of claim 14, wherein when the first conductive layer and the second conductive layer are metal layers, the first conductive layer and the second conductive layer have a thickness between 5 \u03bcm and 35 \u03bcm.
18. The conductor part of claim 17, wherein when the first conductive layer and the second conductive layer are metal layers, the first conductive layer and the second conductive layer have a thickness between 10 \u03bcm and 30 \u03bcm.
19. The conductor part of claim 14, wherein when the first conductive layer and the second conductive layer are conductive plastic layers, the first conductive layer and the second conductive layer have a thickness between 1.5 mm and 10 mm.
20. The conductor part of claim 19, wherein when the first conductive layer and the second conductive layer are conductive plastic layers, the first conductive layer and the second conductive layer have a thickness between 2 mm and 5 mm.
21. The conductor part of claim 9, wherein the second conductive layer is the metal layer, and
wherein the metal layer is made of copper, a copper alloy, an aluminum, a nickel-cobalt ferrous alloy, molybdenum, titanium, or nickel.
22. The conductor part of claim 9, wherein the conductive core is made of copper, a copper alloy, aluminum, a nickel-cobalt ferrous alloy, or molybdenum.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising a power supply, a first capacitor and a second capacitor, each of the first and second capacitors including first and second electrodes, the first electrode of the first capacitor and the first electrode of the second capacitor being connected in common and being supplied with a first voltage from the power supply, the second electrode of the first capacitor being supplied with a second voltage from the power supply, the second voltage being different from the first voltage, and the second electrode of the second capacitor being supplied with the first voltage.
2. The semiconductor device according to claim 1, further comprising a third capacitor including a first electrode connected in common to the first electrodes of the first and second capacitors and applied with the first voltage, and a second electrode applied with a third voltage that is different from the first and second voltages.
3. The semiconductor device according to claim 1, wherein the semiconductor device includes a memory array region having a plurality of memory cells and a peripheral region free from memory cells, and the first and second capacitors are provided in the peripheral region.
4. The semiconductor device according to claim 1, wherein the first voltage is about a half of the second voltage.
5. The semiconductor device according to claim 2, wherein the first voltage is about a half of the second voltage, and the third voltage is a ground voltage.
6. The semiconductor device according to claim 2, further comprising a fourth capacitor including a first electrode connected in common to the first electrodes of the first, second and third capacitors and applied with the first voltage, and a second electrode applied with the first voltage.
7. A semiconductor device comprising:
a power supply;
a memory cell array region including a plurality of memory cells each of which includes a memory cell capacitor; and
a peripheral region including first and second compensation capacitors, each of the first and second compensation capacitors being the same in structure as the memory cell capacitor; wherein,
the first compensation capacitor includes first and second electrodes, the second compensation capacitor including third and fourth electrodes, the first electrode of the first compensation capacitor and the third and fourth electrodes of the second compensation capacitor are commonly supplied with a first voltage from the power supply, and the second electrode of the first compensation capacitor being supplied with a second voltage, which is different from the first voltage from the power supply.
8. The semiconductor device according to claim 7, further comprising:
a first line connected to the first electrode of the first compensation capacitor and the third and fourth electrodes of the second compensation capacitor in common to supply the first voltage to the first, third and fourth electrodes; and
a second line connected to the second electrode of the first compensation capacitor to supply the second voltage to the second electrode.
9. The semiconductor device according to claim 7, wherein the peripheral region further includes a third compensation capacitor which is the same in structure as the memory cell capacitor, and the third compensation capacitor including a fifth electrode supplied with the first voltage and a sixth electrode supplied with a third voltage which is different from the first and second voltages.
10. The semiconductor device according to claim 9, further comprising:
a first line connected to the first electrode of the first compensation capacitor, the third and fourth electrodes of the second compensation capacitor and the fifth electrode of the third compensation capacitor in common to supply the first voltage to the first, third, fourth and fifth electrodes;
a second line connected to the second electrode of the first compensation capacitor to supply the second voltage to the second electrode; and
a third line connected to the sixth electrode of the third compensation capacitor to supply the third voltage to the sixth electrode.