Author: claimsbot

1. An electrode made of a free-standing conductive diamond plate having one of porous or mesh structures wherein the free-standing conductive diamond plate has at least one hole provided by one of laser processing and electrical discharging; wherein said hole extends from one side of the diamond plate through to the other side of the diamond plate; wherein an inner wall of the hole comprises a taper.
2. The electrode as set forth in claim 1 wherein the conductive diamond plate is manufactured by microwave plasma assisted CVD.
3. The electrode as set forth in claim 1 wherein a thickness of the conductive diamond plate is between 0.2 and 1.0 mm.
4. The electrode as set forth in claim 3 wherein a diameter of the hole provided on the diamond plate is between 0.5 and 3.0 mm.
5. The electrode as set forth in claim 4 wherein a plurality of the holes is provided on the diamond plate such that an interval between an outer peripheral of each hole is between 0.2 and 1.5 mm.
6. The electrode as set forth in claim 3 wherein a plurality of the holes is provided on the diamond plate such that an interval between an outer peripheral of each hole is between 0.2 and 1.5 mm.
7. An ozone generator for electrolysis of water comprising: a cathode;
an anode; and
a solid polymer film interposed between the cathode and the anode,
wherein the anode is made of the electrode, set forth in claim 1, and
configured such that a three-phase interface can be formed in which the anode, the solid polymer film, and water contact with one another.
8. The ozone generator as set forth in claim 7 wherein the anode is configured smaller than the solid polymer film, and configured such that the three-phase interface can be formed, in which the anode, the solid polymer film, and water contact with one another, in an outer peripheral of the anode.
9. A method for producing ozone comprising steps of: providing a cathode, an anode, and a solid polymer film interposed between the cathode and the anode; and
electrolyzing water
wherein the electrode, set forth in claim 1, is provided as the anode, and
a three-phase interface is formed in which the anode, the solid polymer film, and water contact with one another.
10. The method for producing ozone as set forth in claim 9 comprising steps of:
configuring the anode smaller than the solid polymer film; and
forming the three-phase interface in an outer peripheral of the anode wherein the anode, the solid polymer film, and water contact with one another.
11. An ozone generator for electrolysis of water comprising:
a cathode;
an anode; and
a solid polymer film interposed between the cathode and the anode,
wherein the anode is made of the electrode, set forth in claim 1, and configured such that a three-phase interface can be formed in which the anode, the solid polymer film, and water contact with one another.
12. A method for producing ozone comprising steps of:
providing a cathode, an anode, and a solid polymer film interposed between the cathode and the anode; and
electrolyzing water
wherein the electrode, set forth in claim 1, is provided as the anode, and a three-phase
interface is formed in which the anode, the solid polymer film, and water contact with one another.
13. An ozone generator for electrolysis of water comprising: a cathode;
an anode; and
a solid polymer film interposed between the cathode and the anode,
wherein the anode is made of a plurality of free-standing conductive diamond, having a columnar shape and disposed parallel to a surface of the solid polymer film, and configured such that a three-phase interface can be formed in which the anode, the solid polymer film, and water contact with one another;
wherein the anode has at least one hole provided by one of laser processing and electrical discharging; wherein said hole extends from one side of the anode through to the other side of the anode; wherein an inner wall of the hole comprises a taper.
14. An ozone generator for electrolysis of water comprising: a cathode;
an anode; and
a solid polymer film interposed between the cathode and the anode,
wherein the anode is made of a plurality of free-standing conductive diamond, having a fragmentary shape and disposed on a surface of the solid polymer film, and configured such that a three-phase interface can be formed in which the anode, the solid polymer film, and water contact with one another;
wherein the anode has at least one hole provided by one of laser processing and electrical discharging; wherein said hole extends from one side of the anode through to the other side of the anode; wherein an inner wall of the hole comprises a taper.
15. A method for producing ozone comprising steps of:
providing a cathode, an anode, and a solid polymer film interposed between the cathode and the anode; and
electrolyzing water
wherein a plurality of free-standing conductive diamond is provided as the anode, the plurality of conductive diamonds having a columnar shape and disposed parallel to a surface of the solid polymer film, and a three-phase interface is formed in which the anode, the solid polymer film, and water contact with one another;
wherein the anode has at least one hole provided by one of laser processing and electrical discharging; wherein said hole extends from one side of the anode through to the other side of the anode; wherein an inner wall of the hole comprises a taper.
16. A method for producing ozone comprising steps of:
providing a cathode, an anode, and a solid polymer film interposed between the cathode and the anode; and
electrolyzing water;
wherein the anode has at least one hole provided by one of laser processing and electrical discharging; wherein said hole extends from one side of the anode through to the other side of the anode; wherein an inner wall of the hole comprises a taper.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A semiconductor device comprising;
a first electrode formed above a first substrate;
an under bump metal film on said first electrode, said under bump metal film being in the shape of a recess; and
a bump electrode embedded in said under bump metal film, said bump electrode having sides and bottom thereof surrounded by said under bump metal film.
2. The semiconductor device of claim 1, wherein said bump electrode has a top surface whose height is substantially equal to height of side walls of said under bump metal film.
3. The semiconductor device of claim 1, wherein at least a part of the side walls of said under bump metal film and being near said first electrode is surrounded by an insulating film.
4. The semiconductor device of claim 1, wherein said bump electrode includes a chamfered upper peripheral edge.
5. The semiconductor device of claim 1 further comprising a second substrate including a second electrode connected to said bump electrode.
6. The semiconductor device of claim 5, wherein said second electrode is a plug, and said second substrate is an interposer.
7. A method of manufacturing a semiconductor device, comprising:
forming an electrode;
forming an insulating film on said electrode, said insulating film having an aperture;
forming an under bump metal film on said insulating film, an inner wall of said aperture and said electrode in said aperture;
forming a bump electrode film on said under bump metal film, and embedding said bump electrode film in said aperture;
removing said bump electrode film and said under bump metal film from portions except for said aperture to from a bump electrode; and
taking off at least a part of a surface of said insulating film.
8. The method of manufacturing a semiconductor device of claim 7, wherein: when forming said insulating film, a first insulating film is formed, and a second insulating film is formed on said first insulating film, said second insulating film having an etching ratio different from an etching ratio of said first insulating film; and when taking off at least a part of a surface at said insulating film, said second insulating film is selectively etched.
9. The method of manufacturing a semiconductor device of claim 7, wherein: when removing said bump electrode film and said under bump metal film, said under bump metal film and said bump electrode film on said insulating film and said aperture are removed by chemical mechanical polishing to form said bump electrode surrounded by said under bump metal film on said inner walls of said aperture and on said electrode in said aperture.
10. The method of manufacturing a semiconductor device of claim 7, wherein after taking off at least a part of the surface of said insulating film, said bump electrode is flattened at a top surface thereof.
11. The method of manufacturing a semiconductor device of claim 7, wherein after taking off at least the surface of said insulating film, said bump electrode is chamfered at a peripheral edge thereof.
12. The method of manufacturing a semiconductor device of claim 7, wherein said bump electrode is a solder bump electrode, and said solder bump electrode is subject to reflowing.
13. A method of manufacturing a semiconductor device, comprising:
forming a first substrate having a first electrode;
forming a second substrate having a second electrode;
applying a non-activated solvent onto a surface of at least one of said first and second electrodes;
bringing said second electrode into contact with said first electrode via said non-activated solvent, and compressing said first and second electrodes; and
activating said solvent at a temperature which is lower than a melting point temperatures of said first and second electrodes, before said first and second electrodes are joined.
14. The method of manufacturing a semiconductor device of claim 13, wherein at least one of said first and second electrodes is a bump electrode.
15. The method of manufacturing a semiconductor device of claim 13, wherein at least one of said first and second electrodes contains at least one of Cu, Ni, Au and Ag.
16. The method of manufacturing a semiconductor device of claim 13, wherein said solvent contains inorganic or organic acid.
17. The method of manufacturing a semiconductor device of claim 13, wherein said solvent is activated by resistance heating, or by irradiating infrared rays, electron beams or laser beams.
18. A method of manufacturing a semiconductor device, comprising:
forming a first substrate having a first electrode;
forming a second substrate having a second electrode;
applying a non-activated solvent onto a surface of at least one of said first and second electrodes, said non-activated solvent being thermally set and being activated at a temperature which is lower than a thermosetting temperature;
bringing said second electrode into contact with said first electrode via said non-activated solvent, and compressing said first and second electrodes;
activating said solvent at a temperature which is lower than a melting point temperatures of said first and second electrodes, before said first and second electrodes are joined; and
heat-curing said solvent after said first and second electrodes are joined.
19. The method of manufacturing a semiconductor device of claim 18, wherein at least one of said first and second electrodes is a bump electrode.
20. The method of manufacturing a semiconductor device of claim 18, wherein at least one of said first and second electrodes contains at least one of Cu, Ni, Au and Ag.
21. The method of manufacturing a semiconductor device of claim 18, wherein said solvent contains inorganic or organic acid.
22. The method of manufacturing a semiconductor device of claim 18, wherein said solvent is activated by resistance heating, or by irradiating infrared rays, electron beams or laser beams.

1. An electronic document for updating resource files for an application, comprising:
logical names used by said application for referring to said resource files; and
parameters for specifying constraints for said resource files.
2. The electronic document of claim 1, wherein said constraints indicate the type of resource files expected by the application.
3. The electronic document of claim 1, wherein said constraints indicate whether the resource files are required for execution of the application.
4. The electronic document of claim 1, wherein said resource files are images and wherein said constraints indicate dimensions for said images.
5. The electronic document of claim 1, wherein said resource files represent audio and wherein said constraints indicate that said audio should be loopable.
6. The electronic document of claim 1, further comprising: an application identifier identifying said application.
7. The electronic document of claim 6, wherein said application identifier is a unique universal resource identifier.
8. The electronic document of claim 7, wherein said unique universal resource identifier identifies the version of said application.
9. The electronic document of claim 1, wherein said application is a mobile application.
10. An electronic document for updating resource files for an application, comprising:
an application identifier identifying an application to which said electronic document corresponds; and
a universal resource identifier identifying a resource file for use with said application.
11. The electronic document of claim 10, further comprising:
a logical name used by said application for referring to said resource file.
12. The electronic document of claim 10, wherein said application identifier is a universal resource identifier.
13. The electronic document of claim 11, further comprising:
a universal resource identifier identifying an external resource definition for said application, said external resource definition specifying said logical name used by said application.
14. The electronic document of claim 10, wherein said application is a mobile application.
15. A method for updating resource files for an application on a mobile device, comprising:
receiving a set of identifiers specifying resource files for use with said application;
retrieving said resource files; and
configuring said application to use said retrieved resource files.
16. The method for updating resource files of claim 15, wherein said receiving comprises receiving a document containing said set of identifiers.
17. The method for updating resource files of claim 16, wherein said set of identifiers are universal resource identifiers.
18. The method for updating resource files of claim 15, further comprising:
receiving a set of constraints for said resource files.
19. The method for updating resource files of claim 18, further comprising:
validating said resource files using said constraints.
20. The method for updating resource files of claim 15, wherein said configuring comprises updating a configuration file for said application with said downloaded resource files.
21. The method for updating resource files of claim 15, further comprising:
confirming that a user of said mobile device wishes to download each of said resource files,
wherein said retrieving comprises retrieving said resource files confirmed by said user of said mobile device.
22. A method for updating resource files for an application, comprising:
identifying resource files for use with said application in an electronic document; and
publishing said electronic document.
23. A computer readable medium containing computer-executable instructions that, when performed by a processor of a mobile device, cause said mobile device to implement the steps of the method of claim 15.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A coaxial connector in combination with an inner conductor interconnection cap, for interconnection with a coaxial cable provided with an inner conductor and an outer conductor, the combination comprising:
a connector body with an inner contact supported coaxial therewithin;
the interconnection cap provided with a bore therethrough, seated upon and circumferentially contacting an outer diameter of the inner contact and an outer diameter of the inner conductor;
the interconnection cap extending along the inner contact to cover a contact portion at a cable end of the inner contact;
wherein, the interconnection cap encloses an interconnection between the inner conductor and the inner contact.
2. The combination of claim 1, wherein a connector end of the interconnection cap abuts an insulator coaxially supporting the inner contact within the connector body.
3. The combination of claim 1, wherein the bore has an inner conductor shoulder at the cable end, the inner conductor shoulder contacting the inner conductor.
4. The combination of claim 3, wherein an inner diameter of the inward projecting shoulder is provided with a scrape surface.
5. The combination of claim 1, further including an inward projecting connector end shoulder, the connector end shoulder retaining the interconnection upon the inner conductor via a snap fit.
6. The combination of claim 1, wherein the bore is provided with a taper between a minimum diameter proximate a cable end of the interconnection cap and a maximum diameter proximate a connector end of the interconnection cap.
7. The combination of claim 1, wherein an inner diameter of the bore longitudinally corresponding to the contact portion decreases between a connector end of the contact portion and a cable end of the contact portion.
8. The combination of claim 1, further including a plurality of stripping fingers, the stripping fingers arrayed around the cable end of the interconnection cap, projecting radially inward.
9. The combination of claim 1, further including a first seal groove provided in the bore proximate the cable end.
10. The combination of claim 8, further including an inner conductor seal seated in the first seal groove.
11. The combination of claim 1, further including a third seal groove provided in the bore proximate the connector end.
12. The combination of claim 1, further including a surface sealant.
13. The combination of claim 12, wherein the surface sealant is applied to a cable end of the bore.
14. The combination of claim 1, further including an outer diameter aligning portion of the interconnection cap proximate the cable end, the outer diameter aligning portion dimensioned to contact an inner diameter of the outer conductor when the outer conductor is coupled to the connector body.
15. The combination of claim 1, further including an outer diameter aligning portion of the interconnection cap proximate the cable end, the outer diameter aligning portion provided with an annular second seal groove in an outer diameter; and
an outer conductor seal disposed in the second seal groove dimensioned to seal between the insulator and an inner diameter of the outer conductor when the outer conductor is coupled to the connector body.
16. The combination of claim 1, further including a mounting portion supporting the inner contact coaxial with the connector body.
17. The combination of claim 15, wherein the interconnection cap extends beyond the connector body at the cable end.
18. The combination of claim 1, further including an impedance matching shoulder projecting radially outward from an outer diameter of the interconnection cap.
19. A method for impedance matching a coaxial connector with a desired coaxial cable, comprising the steps of:
applying an interconnection cap over an outer diameter of a contact portion of an inner contact of the coaxial connector;
the interconnection cap dimensioned to cover a longitudinal extent of the contact portion;
the interconnection cap formed of a material with a desired dielectric constant and radial dimensions selected to equalize an impedance characteristic of the coaxial connector with an impedance characteristic of the coaxial cable.
20. The method of claim 19, wherein the interconnection cap is formed from an elastomeric material, the elastomeric material biasing the inner contact against the inner conductor.