Author: claimsbot

1. A method of identifying application dependency upon a security context comprising:
monitoring execution of an application;
identifying a comparison of a plurality of usergroup identifiers performed by the application; and
checking the plurality of usergroup identifiers against a list of known usergroup identifiers associated with elevated rights.
2. A method of according to claim 1, wherein execution of the application comprises exercising a select set of routines.
3. A method of according to claim 1, wherein at least one of the plurality of usergroup identifiers are not obtained by the application from the security context.
4. A method according to claim 1, wherein at least one of the plurality of usergroup identifiers is not obtained by the application from an access control list.
5. A method according to claim 1, wherein the usergroup identifiers are security identifiers.
6. A method according to claim 1, further comprising logging a state of execution of the application if at least one of the plurality of usergroup identifiers is associated with elevated rights.
7. A method according to claim 6, wherein the state of execution of the application comprises one or more parameters selected from a group consisting of a current process name, each of the plurality of usergroup identifiers, a code pointer to a usergroup identifier check function in the application and a stack dump.
8. A computing device comprising:
an application; and
a trace module, communicatively coupled to the application, to insert a jump to the trace module in the application before the application calls a usergroup identifier comparison function and to determine if any of a usergroup identifier to be compared by the usergroup identifier function is associated with elevated rights.
9. A computing device of claim 8, further comprising a test generation module to control execution of the application.
10. A computing device of claim 8, further comprising a log to store a state of execution if the usergroup identifier is associated with elevated rights.
11. A computing device of claim 8, wherein the usergroup identifier is not obtained by the application from a security context.
12. A computing device of claim 8, wherein the usergroup identifier is not obtained by the application from an access control list.
13. A computing device of claim 8, wherein the usergroup identifier is encoded directly in the application.
14. One or more computer-readable media having instructions that, when executed on one or more processors, perform acts comprising:
intercepting a direct application check of usergroup identifiers;
determining if a usergroup identifier to be compared by the direct application check is associated with a privileged group; and
logging an event if the usergroup identifier is associated with a privileged group.
15. One or more computer-readable media according to claim 14, wherein the usergroup identifier is a security identifier.
16. One or more computer-readable media according to claim 15, wherein logging the event comprises storing one or more parameters selected from the group consisting of a current process name, a monitored security identifier checking function, the security identifier, a source of the security identifier, a stack dump.
17. One or more computer-readable media according to claim 14, further comprising:
monitoring access checks generated during execution of the given application run with a first set of security identifiers;
re-submitting a given access check having a second set of security identifiers if the given access check succeeds with the first set of security identifiers;
receiving a result of the access check re-submitted having the second set of security identifiers; and
logging an event if the given access check succeeds with the first set of security identifiers and fails with the second set of security identifiers.
18. One or more computer-readable media according to claim 17, wherein:
the first set of security identifiers includes one or more identifiers of privileged groups; and
the second set of security identifiers excludes at least one of the one or more identifiers of privileged groups.
19. One or more computer-readable media according to claim 14, further comprising:
monitoring privilege checks generated during execution of a given application run with a first set of privileges;
re-submitting a given privilege check having a second set of privileges if the given privilege check succeeds with the first set of privileges;
receiving a result of the privilege check re-submitted having the second set of privileges; and
logging an event if the given privilege check succeeds with the first set of privileges and fails with the second set of privileges.
20. One or more computer-readable media according to claim 19, wherein at least one privilege associated with a privileged group in the first set of privileges is either removed or disabled to form the second set of privileges.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor processing method of forming a material over an uneven surface topology, comprising:
providing a substrate having the uneven surface topology, the uneven surface topology comprising a valley between a pair of outwardly projecting features;
forming a layer of material over the uneven surface topology, the layer comprising outwardly projecting portions over the outwardly projecting features of the surface topology and having a gap over the valley, the gap having a lowestmost portion; and
etching the layer, the etching forming protective material within the gap while removing an outermost surface of the layer, the etching substantially not removing material of the layer from the lowestmost portion of the gap.
2. The method of claim 1 wherein the material of the layer is an electrically insulative material.
3. The method of claim 1 wherein the etching comprises high density plasma etching.
4. The method of claim 1 wherein the material of the layer comprises silicon dioxide and is formed by chemical vapor deposition from TEOS.
5. The method of claim 1 wherein the etching gas comprises at least one compound that includes both a halogen and carbon.
6. The method of claim 1 wherein the etching occurs in a high density plasma reactor utilizing an etching gas, a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100 C. to about 250 C. and a ring temperature of from about 150 C. to about 350 C.
7. The method of claim 6 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.
8. The method of claim 6 wherein the etching gas consists essentially of one or both -of fluorocarbon compounds and hydrofluorocarbon compounds.
9. The method of claim 6 wherein the plasma is a high density plasma comprising at least about 1109 chargescm3.
10. A semiconductor processing method of forming a material over metal-comprising lines, comprising:
providing a first insulative material substrate;
forming a pair of spaced metal-comprising lines over the substrate;
the spaced metal-comprising lines defining an uneven surface topology which comprises the lines and a valley between the lines;
forming a layer of second insulative material over the uneven surface topology, the layer comprising outwardly projecting portions over the lines and having a gap over the valley; and
subjecting the layer of second insulative material to an etch which forms a protective material at the bottom of the gap; the protective material substantially preventing the second insulative material from being etched from a bottom of the gap.
11. The method of claim 10 wherein the metal-comprising lines consist essentially of materials selected from the group consisting of one or more of aluminum, copper, copper alloys and aluminum alloys.
12. The method of claim 10 wherein the first and second insulative materials comprise a common composition, said common composition being either doped silicon dioxide or undoped silicon dioxide.
13. The method of claim 10 wherein the etching comprises high density plasma etching utilizing an etching gas that includes at least one compound comprising both a halogen and carbon.
14. The method of claim 13 wherein the etching occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100 C. to about 250 C. and a ring temperature of from about 150 C. to about 350 C.
15. The method of claim 10 wherein the high density plasma comprises at least about 1109 chargescm3.
16. The method of claim 10 wherein the gap has an aspect ratio of at least 1.
17. The method of claim 10 wherein the gap has an aspect ratio of at least 3.
18. The method of claim 10 wherein the gap has an aspect ratio of at least 5.
19. A semiconductor processing method of forming and etching a material, comprising:
providing a substrate having spaced projections extending thereover;
forming a first layer of a first insulative material over the projections, the first layer of first insulative material comprising outwardly extending portions over the projections of the substrate and having a gap over the space between the projections;
depositing a first protective material within the gap to at least partially fill the gap; and
after the depositing subjecting the first layer to a first plasma etch utilizing an etching gas, the first plasma etch forming a second protective material within the gap while removing an outermost surface of the first layer of first insulative material, the first and second protective materials preventing first insulative material of the first layer from being removed from a bottom of the gap.
20. The method of claim 19 wherein the first insulative material comprises either doped or undoped silicon dioxide and is formed by chemical vapor deposition from TEOS.
21. The method of claim 19 wherein the first plasma etch occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100 C. to about 250 C., a ring temperature of from about 150 C. to about 350 C., and an etching gas comprising at least one of a fluorocarbon or a hydrofluorocarbon.
22. The method of claim 19 wherein the depositing the protective material comprises chemical vapor deposition utilizing a hydrocarbon precursor material.
23. The method of claim 19 further comprising:
after subjecting the first insulative material to the plasma etch, providing a second layer of a second insulative material over the first insulative material; and
subjecting the second layer to a second plasma etch.
24. The method of claim 23 wherein the first and second insulative materials comprise a common insulative material, and wherein the first and second plasma etches utilize common etching conditions.
25. A semiconductor processing method of forming an insulative material over and between conductive lines, comprising:
providing a substrate having a pair of spaced conductive lines formed thereover;
forming a first layer of insulative material over the substrate and the spaced conductive lines, the first layer comprising outwardly projecting portions over the lines and having a gap over the space between the lines;
subjecting the first layer to a first high density plasma etch to remove at least some of the material of the first layer from over the conductive lines; the first plasma etch utilizing an etching gas that comprises at least one compound that includes both a halogen and carbon and substantially not etching the insulative material of the first layer from the bottom of the gap; and
providing a second layer of insulative material over the etched first layer.
26. The method of claim 25 wherein the first plasma etch occludes the gap with a protective material.
27. The method of claim 25 further comprising, before subjecting the first layer to the plasma etch, depositing a protective material within the gap to at least partially fill the gap.
28. The method of claim 27 wherein the depositing the protective material comprises chemical vapor deposition utilizing a hydrocarbon precursor material.
29. The method of claim 25 further comprising subjecting the second layer to a second high density plasma etch.
30. The method of claim 29 wherein the first and second layers comprise the same material, and wherein the first and second plasma etches utilize the same etching conditions.
31. The method of claim 25 wherein the material of the first layer comprises silicon dioxide and is formed by chemical vapor deposition from TEOS.
32. The method of claim 25 wherein the first plasma etch occurs in a high density plasma reactor utilizing a source power of from about 800 watts to about 1500 watts, a bias power of from about 500 watts to about 1600 watts, a pressure of from about 5 mTorr to about 100 mTorr, a roof temperature of from about 100 C. to about 250 C. and a ring temperature of from about 150 C. to about 350 C.
33. The method of claim 32 wherein the etching gas comprises a gas selected from the group consisting of fluorocarbons, hydrofluorocarbons, and mixtures thereof.

1. A functional fertilizer including natural mineral ingredients, the functional fertilizer provided in form of aqueous solution and comprising:
an aqueous solution containing mineral ingredients extracted from a mixture of pulverized vermiculite, water, and sulfuric acid, wherein said mineral ingredients extracted from the mixture include Al, Mg, Fe, and Si; and
at least one additive added to the aqueous solution, said at least one additive selected from the group consisting of ammonium molybdate, copper sulfate, borax or boric acid, and manganese sulfate.
2. A functional fertilizer including natural mineral ingredients, the functional fertilizer provided in form of aqueous solution and comprising:
an aqueous solution containing mineral ingredients extracted from a mixture of pulverized vermiculite, water, and sulfuric acid, wherein said mineral ingredients extracted from the mixture include Al, Mg, Fe, and Si;
at least one additive added to the aqueous solution, said at least one additive selected from the group consisting of ammonium molybdate, copper sulfate, borax or boric acid, and manganese sulfate; and
at least one additional fertilizer composition subsequently added to the functional fertilizer, said at least one additional fertilizer composition selected from the group consisting of borax or boric acid, magnesium sulfate, potassium phosphate, potassium nitrate, sodium metaphosphate, distilled water, ammonium nitrate, and urea.
3. A soil conditioner comprising:
a functional fertilizer provided in form of aqueous solution and including natural mineral ingredients extracted from a mixture of pulverized vermiculite, water, and sulfuric acid, wherein said mineral ingredients extracted from the mixture include Al, Mg, Fe, and Si, and at least one additive selected from the group consisting of ammonium molybdate, copper sulfate, borax or boric acid, and manganese sulfate; and
a residue mixture prepared by the method comprising the steps of:
pulverizing vermiculite;
mixing the pulverized vermiculite with water;
adding sulfur or sulfuric acid to the mixture of pulverized vermiculite and water;
stirring the mixture to which sulfur or sulfuric acid has been added;
aging the stirred mixture; and
separating and extracting an aqueous solution containing mineral ingredients from the aged mixture.
4. The soil conditioner of claim 3, further comprising at least one additional fertilizer composition subsequently added to the functional fertilizer, said at least one additional fertilizer composition selected from the group consisting of borax or boric acid, magnesium sulfate, potassium phosphate, potassium nitrate, sodium metaphosphate, distilled water, ammonium nitrate, and urea.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A device for transporting andor storing products, comprising carrier and a number of substantially block-shaped containers, to be called block containers, wherein, on the carrier, at least one layer of series of block containers arranged next to and behind each other is provided, wherein the block containers are adopted to be folded andor disassembled, wherein said carrier is substantially plate-shaped wherein the block containers comprise coupling means and are mutually coupled to each other andor to said substantially plate-shaped carrier directly.
2. A device according to claim 1, wherein the block containers placed on said carrier are laterally connected to each other.
3. A device according to claim 1, wherein the containers are designed such that on a top layer of block containers on a first plate-shaped carrier, a second plate-shaped carrier is stackable, on which further block containers have been placed.
4. A device according to claim 1, wherein on the top layer of block containers on a first plate-shaped carrier, a further container is placed, which further container is a standard container, in particular a 20 or 40 foot container with a bottom surface having dimensions approximately corresponding to the dimensions of a matrix of said block containers onto which the further container has been placed.
5. A device according to claim 1, wherein the device has outside dimensions substantially corresponding to those of a standard container, in particular a 20 or 40 foot container.
6. A device according to claim 1, wherein on the carrier, a fastening element is provided to which at least a number of the block containers included in a lower layer is connected.
7. A device according to claim 1, wherein on two opposite sides, the carrier is provided with a side wall, in particular a sidewall which can be folded against the carrier.
8. A device according to claim 1, wherein the block containers are provided with coupling elements which, in a first position, are virtually completely received within the block container, while, in a second position, the coupling elements reach at least partly outside the block container and engage on or in an adjacent block container or on or in the carrier or a fastening element provided thereon.
9. A device according to claim 8, wherein each block container is provided with engaging means for engagement of the block container with the lifting forks of a lifting device, wherein the coupling means are operable by said forks upon engagement of the engagement means.
10. A device according to claim 1, wherein the carrier is a bolster or flat known per se.
11. A series of devices of the type according to claim 1, wherein the block containers of a device in folded andor disassembled condition are stackable on the associated carrier, wherein said series is stackable, wherein a series of carriers stacked one on top of the other with block containers stacked, folded andor disassembled thereon has outside dimensions fitting within a modular size of standard containers, particularly a 20 or 40 foot container.
12. A series of devices according to claim 11, 2h343in onto each carrier two layers of block containers are provided, wherein ten or eleven carriers with associated block containers in folded andor disassembled condition are stackable within the dimensions of a standard container particularly a 20 or 40 foot container.
13. An assembly of a series of devices according to claim 1 and a series of standard containers, particularly 20 andor 40 foot containers, wherein the standard containers and said devices with unfolded block containers are stacked on top of and next to each other, in particular in a transport device or in or on a storage space.
14. An assembly of a series of devices according to claim 1 and a series of standard containers, particularly 20 andor 40 foot containers, wherein the standard containers and said devices with folded andor disassembled block containers are stacked on top of and next to each other, in particular in a transport device or in or on a storage space.
15. A method for transporting products, wherein the products are received in containers adopted to be folded andor disassembled, substantially block-shaped, to be called block containers, wherein the block containers are stacked in files andor in rows on a carrier, whereupon the assembly of carrier and block containers is transported andor stored, whereupon the block containers are emptied and are folded andor disassembled for further transport, in particular return transport andor storage, wherein the containers are placed on a substantially flat carrier and are coupled directly to each other andor to said carrier by locking means in folded out or assembled state.
16. A method according to claim 15, wherein a number of the block containers are attached to the carrier.
17. A method according to claim 15, wherein the block containers are stacked to form a substantially block-shaped assembly with outside dimensions which substantially correspond to the outside dimensions of a standard container, in particular a 20 or 40 foot container, at least a modular size thereof.
18. A method according to claim 15, wherein a number of assemblies of carriers with block containers stacked thereon are stacked in a transport device of, on, or in a storage space.
19. A method according to claim 15, wherein a number of assemblies of carriers with block containers stacked thereon and a number of standard containers, in particular 20 andor 40 foot containers, are stacked in a transport device or on, or in a storage space.
20. A method according to claim 15, wherein the block containers are emptied and are folded andor disassembled, whereupon the folded andor disassembled block containers are restacked on the carrier to a substantially block-shaped assembly with outside dimensions which substantially correspond to the outside dimensions of a standard container, in particular a 20 or 40 foot container, at least a modular size thereof.
21. A method according to claim 15, wherein at least a number of the block containers is comprised of at least a carrier frame and an inner carrier, wherein the inner carrier is foldable and is preferably provided with ventilation openings.
22. A method according to claim 21, wherein the carrier frame and the inner carrier, after emptying of a block container, are separated from each other and are separately cleaned andor folded.
23. Use of a device according to claim 1, said carrier being bolster or flat for transporting andor storing goods, wherein:
the containers in folded out andor assembled condition are stacked on the bolster or flat, while forming a substantially block-shaped assembly with outside dimensions which fit within a modular size of a standard container, particularly a 20 or 40 foot container from a filling position; and
The containers in folded andor disassembled condition are stacked on the bolster or flat, while forming a substantially block-shaped assembly with outside dimensions which fit within a modular size of a standard container, particularly 1 20 or 40 foot container, for transport to a filling position or storage;
wherein the containers are connected directly to each other andor to said bolster or flat.
24. Use of a bolster or flat according to claim 23, wherein on the bolster or flat, fastening means are secured to which at least a number of a lower layer of containers are attached, wherein the containers in at least the or each layer are mutually coupled.
25. A block container for use in a device according to claim 1, which block container has outside dimensions which substantially fit within a modular size of a standard container and is provided with coupling means for coupling to a similar container.
26. A method according to claim 15, which block container has outside dimensions which substantially fit within a modular size of a standard container and is provided with coupling means for coupling to a similar container.