Author: claimsbot

1. A horseshoe magnet with two pole tips, particularly for a sensor apparatus, comprising:
a yoke with a cross-beam and at least one arm;
a pole tip that is attached to the arm of the yoke,

wherein the arm is not integral with said pole tip andor not integral with the cross-beam;
at least one coil

characterized in that the coil fits over the arm when the pole tip is not attached to said arm andor when the arm is not attached to the cross-beam .
2. The horseshoe magnet according to claim 1,
characterized in that said attached pole tip and the yoke consist of different materials, preferably of iron and an cobalt-iron alloy.
3. The horseshoe magnet according to claim 1,
characterized in that said attached pole tip is screwed on the yoke, clamped, particularly by means of a spring loaded arm, andor attached by material bond.
4. The horseshoe magnet according to claim 1,
characterized in that a mounting block is disposed between two arms, of the yoke such that it presses the attached pole tip against the associated arm.
5. The horseshoe magnet according to claim 1,
characterized in that the yoke, its cross-beam, its arm, andor the attached pole tip are cylindrical.
6. (canceled)
7. The horseshoe magnet according to claim 1,
characterized in that it comprises a lens that is mounted between two arms andor the pole tips of the yoke.
8. The horseshoe magnet according to claim 1,
characterized in that it comprises a planar reference facet.
9. The horseshoe magnet according to claim 1,
characterized in that the attached pole tip extends in line with or perpendicular to or oblique to the arm.
10. A sensor apparatus, comprising
an accommodation space (C) for a sample;
a horseshoe magnet according to claim 1 that is disposed adjacent to the accommodation space;
optics for a guiding light (L) towards andor away from the accommodation space.
11. The sensor apparatus according to claim 10,
characterized in that the optics comprises a lens that is mounted between the pole tips of the horseshoe magnet.
12. A method for manufacturing a horseshoe magnet said method comprising the following steps:
producing a yoke with at least one arm;
producing at least one pole tip;
attaching said pole tip to the arm of the yoke.
13. A method for manufacturing a horseshoe magnet, said method comprising the following steps:
producing a cross-beam;
producing at least one pole tip with an arm;
attaching said arm to the cross-beam.
14. The manufacturing method according to claim 12,
characterized in that the yoke, the cross-beam, andor the pole tip is produced by a procedure selected from the group consisting of electro-discharge manufacturing, machining, metal injection molding, and additive manufacturing.
15. Use of the horseshoe magnet according to claim 1 and the sensor apparatus according to claim 10 for molecular diagnostics, biological sample analysis, chemical sample analysis, food analysis, andor forensic analysis.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising:
a conductive pad formed in a non-cell area of a semiconductor substrate;
a lower interlayer insulating layer formed in a cell area of the semiconductor substrate and over the conductive pad;
a conductive plug formed in a contact hole extending through a portion of the lower interlayer insulating layer located in the cell area of the semiconductor substrate;
a first contact pattern over the lower interlayer insulating layer, the first contact pattern having a first opening overlying a peripheral region of the conductive pad and exposing an upper surface of the lower interlayer insulating layer;
a second contact pattern over the conductive plug, the second contact pattern having a second opening exposing the conductive plug;
a first conductive pattern in the first opening, the first conductive pattern having a third opening to expose a region of the conductive pad adjacent to the peripheral region of the conductive pad;
a second conductive pattern in the second opening;
an upper interlayer insulating layer over the first conductive pattern, the upper interlayer insulating layer having a fourth opening exposing the first conductive pattern and the third opening; and
a conductive contact extending through the third opening and the fourth opening, the conductive contact electrically connected to the conductive pad,
wherein the first and second conductive patterns comprise the same layer of material.
2. The semiconductor device of claim 1, further comprising an upper wiring disposed above the first conductive pattern, wherein the conductive contact is connected to the upper wiring.
3. The semiconductor device of claim 1, wherein the conductive pad comprises a bit line landing pad formed in a peripheralcore area of the substrate.
4. The semiconductor device of claim 3, wherein the bit line landing pad comprises a bit line conductive pattern formed on the semiconductor substrate and a bit line mask pattern formed on the bit line conductive pattern.
5. The semiconductor device of claim 4, wherein the bit line conductive pattern comprises a first layer comprising a metal compound and a second layer comprising a metal.
6. The semiconductor device of claim 5, wherein the first layer comprises titaniumtitanium nitride, and the second layer comprises tungsten.
7. The semiconductor device of claim 4, wherein the bit line mask pattern comprises nitride.
8. The semiconductor device of claim 4, wherein the conductive contact is connected to the bit line conductive pattern through the bit line mask pattern.
9. The semiconductor device of claim 1, wherein the first conductive pattern is formed on the upper surface of the lower insulating layer.
10. The semiconductor device of claim 9, wherein the conductive contact is connected to the conductive pad through the lower interlayer insulating layer.
11. The semiconductor device of claim 1, wherein the first conductive pattern comprises polysilicon.
12. The semiconductor device of claim 1, wherein the conductive contact comprises doped polysilicon or tungsten.
13. The semiconductor device of claim 1, further comprising a capacitor electrically connected to the conductive plug in the cell area of the semiconductor substrate.
14. A semiconductor device comprising:
gate structures formed in a cell area and a non-cell area of a semiconductor substrate;
a first contact region and a second contact region in the cell area between the gate structures;
a first insulation layer overlying the first and second contact regions;
a first pad and a second pad respectively contacting the first contact region and the second contact region through the first insulation layer;
a second insulation layer formed on the first insulation layer, on the first pad and on the second pad in the cell area, and on the first insulation layer in the non-cell area;
a bit line structure formed on the second insulation layer in the cell area, the bit line structure being connected to the second pad;
a bit line landing pad formed on the second insulation layer in the non-cell area;
a third insulation layer formed on the bit line structure and on the bit line landing pad;
a first contact pattern formed on the third insulation layer in the cell area, wherein the first contact pattern exposes the first pad;
a second contact pattern formed on the third insulation layer in the non-cell area, the second contact pattern having a first opening overlying a peripheral portion of the bit line landing pad;
a contact plug contacting the first pad through the third insulation layer and the second insulation layer;
a third pad formed on the contact plug in the cell area;
a first conductive pattern formed within the first opening overlying the peripheral portion of the bit line landing pad, the conductive pattern having a second opening exposing a substantially central portion of the landing pad;
a second conductive pattern within the first contact pattern, wherein the first and second conductive patterns comprise the same material;
a fourth insulation layer formed on the first contact pattern, on the third pad, on the second contact pattern and on the conductive pattern; and
a metal contact making contact with the bit line landing pad through the fourth insulation layer and the conductive pattern, the metal contact extending through the second opening.
15. The semiconductor device of claim 14, wherein each of the bit line structure and the bit line landing pad comprises a bit line conductive pattern and a bit line mask pattern.
16. The semiconductor device of claim 15, wherein the bit line conductive pattern comprises a first layer of a metal compound and a second layer of a metal.
17. The semiconductor device of claim 16, wherein the first layer comprises titaniumtitanium nitride and the second layer comprises tungsten.
18. The semiconductor device of claim 15, wherein the bit line mark pattern comprises nitride.
19. The semiconductor device of claim 15, wherein the metal contact is connected to the bit line conductive pattern through the bit line mask pattern.
20. The semiconductor device of claim 14, wherein the first contact pattern is formed using a material identical to that of the second contact pattern.
21. The semiconductor device of claim 20, wherein the first conductive pattern has an etching selectivity relative to the second contact pattern.
22. The semiconductor device of claim 21, wherein the first conductive pattern comprises polysilicon and the second contact pattern comprises oxide.
23. A semiconductor device comprising:
a conductive pad formed in a non-cell area of a semiconductor substrate;
an interlayer insulating layer formed in the non-cell area of the semiconductor substrate and in a cell area of the semiconductor substrate, wherein a portion of the interlayer insulating layer located in the non-cell area of the semiconductor substrate is disposed below an upper surface of the conductive pad;
a conductive plug formed in a contact hole extending through a portion of the interlayer insulating layer located in the cell area of the semiconductor substrate;
a first contact pattern over the interlayer insulating layer, the first contact pattern having a first opening overlying the portion of the interlayer insulating layer disposed below the upper surface of the conductive pad and also overlying a peripheral region of the conductive pad;
a second contact pattern over the conductive plug, the second contact pattern having a second opening exposing the conductive plug;
a first conductive pattern in the first opening having a third opening defined therein to expose another region of the conductive pad;
a second conductive pattern in the second opening; and
a conductive contact extending through the third opening, the conductive contact electrically connected to the conductive pad,
wherein the first and second conductive patterns comprise the same layer of material.
24. The semiconductor device of claim 23, further comprising an upper wiring disposed above the first conductive pattern, wherein the conductive contact is connected to the upper wiring.
25. The semiconductor device of claim 23, wherein the conductive pad comprises a bit line landing pad formed in a peripheralcore area of the substrate.
26. The semiconductor device of claim 25, wherein the bit line landing pad comprises a bit line conductive pattern formed on the semiconductor substrate and a bit line mask pattern formed on the bit line conductive pattern.
27. A semiconductor device, comprising:
gate structures formed in a cell area and a non-cell area of a semiconductor substrate;
a first contact region and a second contact region in the cell area between the gate structures;
a first insulation layer overlying the first and second contact regions;
a first pad and a second pad respectively contacting the first contact region and the second contact region through the first insulation layer;
a second insulation layer formed on the first insulation layer, on the first pad and on the second pad in the cell area, and on the first insulation layer in the non-cell area;
a bit line structure formed on the second insulation layer in the cell area, the bit line structure being connected to the second pad;
a bit line landing pad formed on the second insulation layer in the non-cell area;
a third insulation layer formed on the bit line structure and on the bit line landing pad;
a first contact pattern formed on the third insulation layer in the cell area, wherein the first contact pattern exposes the first pad;
a second contact pattern formed on the third insulation layer in the non-cell area, the second contact pattern having a first opening overlying a peripheral portion of the bit line landing pad and exposing an upper surface of the third insulation layer;
a contact plug contacting the first pad through the third insulation layer and the second insulation layer;
a first conductive pattern formed within the first opening overlying the peripheral portion of the bit line landing pad, the first conductive pattern having a second opening exposing a portion of the landing pad adjacent to the peripheral portion of the bit line landing pad;
a second conductive pattern within the first contact pattern in the cell area, wherein the first and second conductive patterns comprise the same material;
a fourth insulation layer formed on the first contact pattern, on the second conductive pattern, on the second contact pattern and on the first conductive pattern, the fourth insulation layer having a third opening exposing a portion of the first conductive pattern and the second opening; and
a metal contact making contact with the bit line landing pad through the third opening and the second opening.

1. A method for purchasing gifts, comprising:
providing a computing device configured to access one or more retailer websites, wherein each retailer website lists one or more gifts available for purchase;
selecting a plurality of gifts available for purchase;
ranking the selected plurality of gifts to indicate a payment reimbursement order;
purchasing the ranked, selected plurality of gifts;
receiving one or more monetary contributions;
allocating the one or more monetary contributions according to the rank of the purchased gifts;
deselecting at least one of the purchased gifts; and
returning any monetary contributions allocated thereto.
2. The method of claim 1, wherein return of the monetary contributions is in the form a gift card.
3. The method of claim 1, further comprising re-allocating the one or more monetary contributions according to the rank of the purchased gifts after the at least one purchased gift is deselected.
4. The method of claim 3, further comprising distributing a partial or full reimbursement for one or more purchased gifts according to the re-allocated one or more monetary contributions.
5. The method of claim 1, further comprising re-ranking the remaining selected plurality of gifts.
6. The method of claim 5, wherein the re-ranking is performed after the at least one of the purchased gifts is deselected.
7. The method of claim 5, further comprising re-allocating the one or more monetary contributions according to the re-ranking of the purchased gifts.
8. The method of claim 7, further comprising distributing a partial or full reimbursement for one or more purchased gifts according to the re-allocated one or more monetary contributions.
9. A system for purchasing gifts, comprising:
a computing device configured to connect to one or more retailer websites over a communication portal, wherein each retailer website lists one or more gifts available for purchase;
an application executable by the computing device or a website server to enable a user to select a plurality of gifts available for purchase, to rank the selected plurality of gifts to indicate a payment reimbursement order, to purchase the ranked gifts, to receive one or more monetary contributions after the purchase of the ranked gifts, and to deselect at least one of the purchased gifts, wherein the application is configured to allocate one or more monetary contributions according to the rank of the purchased gifts and to return the allocated contributions made to the deselected gift.
10. The system of claim 9, wherein the return of the contributions is in the form of a gift card.
11. The system of claim 9, wherein the application is configured to re-allocate the one or more monetary contributions according to the rank of the purchased gifts after the at least one purchased gift is deselected.
12. The system of claim 9, wherein the application is configured to re-rank the remaining selected plurality of gifts.
13. The system of claim 12, wherein the application is configured to re-allocate the one or more monetary contributions according to the re-ranking of the purchased gifts.
14. The system of claim 13, wherein the application is configured to distribute a partial or full reimbursement for one or more purchased gifts according to the re-allocated one or more monetary contributions.
15. A method for purchasing gifts, comprising:
providing a computing device configured to access one or more retailer websites, wherein each retailer website lists one or more gifts available for purchase;
selecting a plurality of gifts available for purchase;
ranking the selected plurality of gifts to indicate a funding order;
receiving one or more monetary contributions to fund the purchase of one or more of the selected plurality of gifts;
allocating the one or more monetary contributions according to the rank of the selected plurality of gifts prior to purchase of one or more of the gifts;
deselecting at least one of the selected gifts; and
returning to the user the allocated monetary contributions made thereto.
16. The method of claim 15, wherein the return of the contributions is in the form of a gift card.
17. The method of claim 16, further comprising not purchasing the at least one deselected gift.
18. The method of claim 15, further comprising receiving the one or more monetary contributions corresponding to the at least one deselected gift.
19. The method of claim 18, further comprising re-allocating the one or more monetary contributions according to the rank of the selected plurality of gifts after the at least one gift is deselected.
20. The method of claim 19, further comprising purchasing each selected gift that is partially or fully funded from the one or more re-allocated monetary contributions.
21. A system for purchasing gifts, comprising:
a computing device configured to connect to one or more retailer websites over a communication portal, wherein each retailer website lists one or more gifts available for purchase;
an application executable by the computing device or a website server to enable a user to select a plurality of gifts available for purchase, to rank the selected plurality of gifts to indicate a funding order, to receive one or more monetary contributions to fund the purchase of one or more of the selected plurality of gifts; and to deselect at least one of the selected gifts, wherein the application is configured to allocate each monetary contribution according to the rank of the selected plurality of gifts before purchase of one or more of the gifts, wherein the application is configured to return the allocated monetary contributions for the deselected gifts.
22. The system of claim 21, wherein the return of the contributions is in the form of a gift card.
23. The system of claim 21, wherein the application is configured to re-allocate the one or more monetary contributions according to the rank of the selected gifts after the at least one gift is deselected.
24. The system of claim 22, wherein the application is configured to purchase each selected gift that is partially or fully funded from the one or more re-allocated monetary contributions.
25. The system of claim 21, wherein the application is configured to re-rank the remaining selected plurality of gifts.
26. The system of claim 22, wherein the application is configured to re-allocate the one or more monetary contributions according to the re-ranking of the selected gifts.
27. The system of claim 25, wherein the application is configured to purchase each selected gift that is partially or fully funded from the one or more re-allocated monetary contributions according to the re-ranking of the selected gifts.
28. The system of claim 21, wherein the application is configured to not purchase the at least one deselected gift.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A universal mounting bracket for coplanar and bi-planar differential pressure (DP) transmitters, and gauge pressure transmitters, the bracket comprising:
a support defining three mutually orthogonal planes;
at least two sets of bracket mounts respectively disposed on first and second mutually orthogonal planes, the bracket mounts including U-clamps;
at least two sets of coplanar DP transmitter mounts respectively disposed on first and third mutually orthogonal planes;
at least one set of bi-planar DP transmitter mounts disposed on the first plane, configured for mounting the bi-planar DP transmitter in any one of a plurality of mutually orthogonal orientations;
a plurality of process apertures interspersed among said bi-planar DP transmitter mounts;
at least two sets of gauge pressure transmitter mounts respectively disposed on the first and third mutually orthogonal planes, the gauge pressure transmitter mounts including U-clamps; and
the support including a tubular frame and a plate coupled to the frame.
2. A universal mounting bracket for coplanar and bi-planar differential pressure (DP) transmitters, and gauge pressure transmitters, the bracket comprising:
a support defining a plurality of planes;
at least two sets of bracket mounts respectively disposed on mutually orthogonal planes;
at least two sets of coplanar DP transmitter mounts respectively disposed on mutually orthogonal planes;
at least one set of bi-planar DP transmitter mounts configured for mounting the bi-planar DP transmitter in any one of a plurality of mutually orthogonal orientations; and
at least two sets of gauge pressure transmitter mounts respectively disposed on mutually orthogonal planes.
3. The bracket of claim 2, wherein said bracket mounts are configured for mounting the bracket in at least two mutually orthogonal orientations.
4. The bracket of claim 3, wherein said bracket mounts are configured for mounting the bracket to a pipe.
5. The bracket of claim 4, wherein the bracket mounts comprise U-clamp mounts.
6. The bracket of claim 2, wherein the mounts comprise mounting holes.
7. The bracket of claim 2, wherein the gauge pressure transmitter mounts comprise U-clamp mounts.
8. The bracket of claim 2, wherein said mounts are disposed on three mutually orthogonal planes.
9. The bracket of claim 8, wherein:
the sets of bracket mounts are respectively disposed on first and second planes;
the sets of coplanar DP transmitter mounts are respectively disposed on first and third planes;
the set of bi-planar DP transmitter mounts is disposed on the first plane; and
the sets of gauge pressure transmitter mounts are respectively disposed on the first and third planes.
10. The bracket of claim 2, wherein the support defines at least three mutually orthogonal planes.
11. The bracket of claim 10, wherein the support comprises:
a frame; and
a plate coupled to the frame.
12. The bracket of claim 11, wherein the frame is integral with the plate.
13. The bracket of claim 11, wherein the frame comprises a tubular channel.
14. The bracket of claim 2, further comprising a plurality of process apertures interspersed among said bi-planar DP transmitter mounts.
15. The bracket of claim 2, being fabricated from a material selected from the group consisting of: steel, aluminum, stainless steel, brass, fiberglass, carbon fiber, aramid fiber, plastic, and combinations and composites thereof.
16. A universal mounting bracket for coplanar and bi-planar differential pressure (DP) transmitters, and gauge pressure transmitters, the bracket comprising:
support means which defines a plurality of planes;
at least two sets of means for mounting the bracket respectively disposed on mutually orthogonal planes;
at least two sets of means for mounting a coplanar DP transmitter, disposed on mutually orthogonal planes;
at least one set of means for mounting a bi-planar DP transmitter, configured for mounting the bi-planar DP transmitter in any one of a plurality of mutually orthogonal orientations; and
at least two sets of means for mounting a gauge pressure transmitter, respectively disposed on mutually orthogonal planes.
17. A method for fabricating a universal mounting bracket for coplanar and bi-planar differential pressure (DP) transmitters, and gauge pressure transmitters, the method comprising:
(a) providing a support defining a plurality of planes;
(b) respectively disposing at least two sets of bracket mounts on mutually orthogonal planes;
(c) respectively disposing at least two sets of coplanar DP transmitter mounts on mutually orthogonal planes;
(d) providing a set of bi-planar DP transmitter mounts configured for mounting the bi-planar DP transmitter in any one of a plurality of mutually orthogonal orientations; and
(e) respectively disposing at least two sets of gauge pressure transmitter mounts on mutually orthogonal planes.