1. A computer-readable storage medium which stores an improvement act support program characterized by causing a computer to execute
a display processing step of displaying an improvement act support screen, in which a theme region, a keep region, a problem region, and a try region are disposed, on a display;
an article editing step of processing new generation of articles to be disposed in the theme region, the keep region, the problem region, and the try region, correction of the articles, or deletion of the articles in accordance with an input operation;
a region menu selecting step of, when an operation specifying the problem region, the try region, or the keep region is detected, displaying a new generation menu of an article corresponding to the region and enabling the process of the article editing step when an operation selecting the new generation menu is detected;
an article menu selecting step of, when an operation specifying an article disposed in the problem region, the try region, or the keep region is detected, displaying new generation menus of articles the other regions in addition to a correction menu and a deletion menu of the article and enabling the process of the article editing step when an operation selecting any of the menus is detected; and
an accumulation processing step of associating the problem article, the try article, and the keep article by using the theme article as a starting point and storing the articles in a storage unit.
2. The storage medium according to claim 1, characterized in that, in the article menu selecting step,
when an operation specifying the problem article disposed in the problem region is detected, new generation menus of a try article of the try region and a keep article of the keep region are displayed in addition to a correction menu and a deletion menu of the specified problem article;
when an operation specifying the try article disposed in the try region is detected, new generation menus of a problem article of the problem region and a keep article of the keep region are displayed in addition to a correction menu and a deletion menu of the specified try article; and,
when an operation specifying the keep article disposed in the keep region is detected, new generation menus of a problem article of the problem region and a try article of the try region are displayed in addition to a correction menu and a deletion menu of the specified keep article.
3. The storage medium according to claim 1, characterized in that the article editing step causes
a theme article editing step of processing new generation, correction, or deletion of the theme article to be disposed in the theme region in accordance with an input operation;
a problem article editing step of processing new generation of the problem article of a tag image in which a problematic point or the like is described which is to be disposed in the problem region, correction of the problem article, or deletion of the problem article in accordance with an input operation;
a try article editing step of processing new generation of the try article of a tag image in which an improvement measure or the like to be tried next is described which is to be disposed in the try region, correction of the try article, or deletion of the try article in accordance with an input operation; and
a keep article editing step of processing new generation of the keep article of a tag image in which an improvement measure or the like determined to be continued is described which is to be disposed in the keep region, correction of the keep article, or deletion of the keep article in accordance with an input operation to be executed.
4. The storage medium according to claim 1, characterized in that, in the accumulation processing step, for each article, attribute information including an identifier of the article, a link relation with another article, an article content, an article explanation, generation date and time, disappearance date and time, and screen display coordinates is stored.
5. The storage medium according to claim 1, characterized by further executing a search step of searching the storage unit based on an input search condition and displaying a search result.
6. The improvement act support program according to claim 5, characterized in that the search step includes an article search step of searching the storage unit based on an input article search condition and displaying a search result in a list of an article matched with the search condition.
7. The storage medium according to claim 5, characterized in that the search step includes a trace search step of searching the storage unit based on an operation specifying an article on the improvement act support screen and an input article search condition, tracing a link relation starting from the specified article so as to search an article matched with the search condition, and displaying a list of the article.
8. The storage medium according to n claim 5, characterized in that the search step includes an uncompleted problem search step of searching a problem article of which end is not a keep article by tracing a link relation of each article starting from the theme article and displaying the problem article as an uncompleted problem article in a list in the chronological order of generation time.
9. The storage medium according to claim 5, characterized in that the search step includes a keep rate search step of detecting a total article number N at ends by tracing all link relations starting from the theme article, detecting a keep article number n of keep articles at the ends, and obtaining and displaying a keep rate which is the keep article number n divided by the total article number N.
10. The storage medium according to claim 5, characterized in that the search step includes an update frequency search step of extracting generation date and time of each article by tracing all link relations starting from the theme article, ordering the date and time in the order of time, calculating mean generation time from mean of the difference between adjacent generation date and time, calculating elapsed time from generation date and time of the theme article until generation date and time of a last article, and displaying the mean generation time and the elapsed time in a list.
11. An improvement act support method characterized by including
a display processing step of displaying an improvement act support screen, in which a theme region, a keep region, a problem region, and a try region are disposed, on a display;
an article editing step of processing new generation of articles to be disposed in the theme region, the keep region, the problem region, and the try region, correction of the articles, or deletion of the articles in accordance with an input operation;
a region menu selecting step of, when an operation specifying the problem region, the try region, or the keep region is detected, displaying a new generation menu of an article corresponding to the region and enabling the process of the article editing step when an operation selecting the new generation menu is detected;
an article menu selecting step of, when an operation specifying an article disposed in the problem region, the try region, or the keep region is detected, displaying new generation menus of articles of the other regions in addition to a correction menu and a deletion menu of the article and enabling the process of the article editing step when an operation selecting any of the menus is detected; and
an accumulation processing step of associating the problem article, the try article, and the keep article by using the theme article as a starting point and storing the articles in a storage unit.
12. The improvement act support method according to claim 11, characterized in that, in the article menu selecting step,
when an operation specifying the problem article disposed in the problem region is detected, new generation menus of a try article of the try region and a keep article of the keep region are displayed in addition to a correction menu and a deletion menu of the specified problem article;
when an operation specifying the try article disposed in the try region is detected, new generation menus of a problem article of the problem region and a keep article of the keep region are displayed in addition to a correction menu and a deletion menu of the specified try article; and,
when an operation specifying the keep article disposed in the keep region is detected, new generation menus of a problem article of the problem region and a try article of the try region are displayed in addition to a correction menu and a deletion menu of the specified keep article.
13. The improvement act support method according to claim 11, characterized in that, in the accumulation processing step, for each article, attribute information indicating a link relation with another article, an article content, generation date and time, disappearance date and time, screen display positions, etc. is stored.
14. The improvement act support method according to claim 11, characterized in that the search step includes an article search step of searching the storage unit based on an input article search condition and displaying a search result in a list of an article matched with the search condition.
15. The improvement act support method according to claim 11, characterized in that the search step includes a trace search step of searching the storage unit based on an operation specifying an article on the improvement act support screen and an input article search condition, tracing a link relation starting from the specified article so as to search an article matched with the search condition, and displaying a list of the article.
16. The improvement act support method according to claim 11, characterized in that the search step includes an uncompleted problem search step of searching a problem article of which end is not a keep article by tracing a link relation of each article starting from the theme article and displaying the problem article as an uncompleted problem article in a list in the chronological order of generation time.
17. The improvement act support method according to claim 11, characterized in that the search step includes a keep rate search step of detecting a total article number N at ends by tracing all link relations starting from the theme article, detecting a keep article number n of keep articles at the ends, and obtaining and displaying a keep rate which is the keep article number n divided by the total article number N.
18. The improvement act support method according to claim 11, characterized in that the search step includes an update frequency search step of extracting generation date and time of each article by tracing all link relations starting from the theme article, ordering the date and time in the order of time, calculating mean generation time from mean of the difference between adjacent generation date and time, calculating elapsed time from generation date and time of the theme article until generation date and time of a last article, and displaying the mean generation time and the elapsed time in a list.
19. An improvement act support apparatus characterized by having
a display processing unit which displays an improvement act support screen, in which a theme region, a keep region, a problem region, and a try region are disposed, on a display;
an article editing unit which processes new generation of articles to be disposed in the theme region, the keep region, the problem region, and the try region, correction of the articles, or deletion of the articles in accordance with an input operation;
a region menu selecting unit which, when an operation specifying the problem region, the try region, or the keep region is detected, displays a new generation menu of an article corresponding to the region and enables the process of the article editing unit when an operation selecting the new generation menu is detected;
an article menu selecting unit which, when an operation specifying an article disposed in the problem region, the try region, or the keep region is detected, displays new generation menus of articles of the other regions in addition to a correction menu and a deletion menu of the specified article and enables the process of the article editing unit when an operation selecting any of the menus is detected; and
an accumulation processing unit which associates the problem article, the try article, and the keep article by using the theme article as a starting point and stores the articles in a storage unit.
20. The improvement act support apparatus according to claim 19, characterized in that, the article menu selecting unit
displays, when an operation specifying the problem article disposed in the problem region is detected, new generation menus of a try article of the try region and a keep article of the keep region in addition to a correction menu and a deletion menu of the specified problem article;
displays, when an operation specifying the try article disposed in the try region is detected, new generation menus of a problem article of the problem region and a keep article of the keep region in addition to a correction menu and a deletion menu of the specified try article; and,
displays, when an operation specifying the keep article disposed in the keep region is detected, new generation menus of a problem article of the problem region and a try article of the try region in addition to a correction menu and a deletion menu of the specified keep article.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a deposition preventing film on an insulating film formed over said semiconductor substrate;
forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
forming a first conductor film by chemical vapor deposition on only an inner surface and a bottom surface of each of said holes in said insulating film by utilizing said deposition preventing film;
forming a dielectric film on said first conductor film and on said deposition preventing film at a predetermined temperature, a material of said first conductor film being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming a second conductor film on said dielectric film;
said first and second conductor films and said dielectric film together constituting said capacitors.
2. A method of manufacturing a semiconductor device according to claim 1, wherein said dielectric film is an oxide.
3. A method of manufacturing a semiconductor device according to claim 1, wherein said deposition preventing film is made of an oxide of Ti, an oxide of W or an oxide of Ta.
4. A method of manufacturing a semiconductor device according to claim 1, wherein said deposition preventing film is an electrically conductive deposition preventing film made of Ti, W, Ta, TiN or WN.
5. A method of manufacturing a semiconductor device according to claim 4, which further comprises a step of oxidizing said conductive deposition preventing film and rendering it non-conductive.
6. A method of manufacturing a semiconductor device according to claim 4, which further comprises a step of removing said conductive deposition preventing film between the formation step of said first conductor film and the formation step of said dielectric film.
7. A method of manufacturing a semiconductor device according to claim 1, wherein the formation step of said first conductor film is effected in an atmosphere containing an oxidizing gas in a concentration of 0.1% to 70%.
8. A method of manufacturing a semiconductor device according to claim 1, wherein the formation step of said first conductor film is effected at a temperature of 200 to 450 C.
9. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a deposition preventing film on an insulating film formed over said semiconductor substrate;
forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
burying said holes in said insulating film by a first conductive material by chemical vapor deposition by utilizing said deposition preventing removing said deposition preventing film and said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
forming a dielectric film on said first electrodes at a predetermined temperature, said first electrodes being made of Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming a film of a second conductive material to serve as second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
10. A method of manufacturing a semiconductor device according to claim 9, wherein said deposition preventing film is an oxide of Ti, an oxide of W or an oxide of Ta.
11. A method of manufacturing a semiconductor device according to claim 9, wherein said deposition preventing film is an electrically conductive deposition preventing film made of Ti, W, Ta, TiN or WN.
12. A method of manufacturing a semiconductor device according to claim 9, wherein the formation step of said first conductor film is conducted in an atmosphere containing an oxidizing gas in a concentration of 0.1 to 70%.
13. A method of manufacturing a semiconductor device according to claim 9, wherein the formation step of said first conductor film is conducted at a temperature of 200 to 450 C.
14. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a deposition preventing film on an insulating film formed over said semiconductor substrate;
forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
burying said holes in said insulating film by a conductive material by chemical vapor deposition by utilizing said deposition preventing film, and forming a plurality of plugs;
disposing one first electrode in such a manner as to correspond to each of said plugs, each of said first electrodes being so formed as to keep contact with the top surface of said plug and to be electrically connected to said plug corresponding thereto;
forming a dielectric film on said first electrodes at a predetermined temperature, said first electrodes being made of Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
15. A method of manufacturing a semiconductor device according to claim 14, wherein said deposition preventing film is an oxide of Ti, an oxide of W or an oxide of Ta.
16. A method of manufacturing a semiconductor device according to claim 14, wherein said deposition preventing film is an electrically conductive deposition preventing film made of Ti, W, Ta, TiN or WN.
17. A method of manufacturing a semiconductor device according to claim 16, which further comprises a step of oxidizing said conductive deposition preventing film and rendering it non-conductive.
18. A method of manufacturing a semiconductor device according to claim 16, which further comprises a step of removing said conductive deposition preventing film between the formation step of said plugs and the formation step of said first electrodes.
19. A method of manufacturing a semiconductor device according to claim 14, wherein the formation step of said plug is conducted in an atmosphere containing an oxidizing gas in a concentration of 0.1 to 70%.
20. A method of manufacturing a semiconductor device according to claim 14, wherein the formation step of said plugs is conducted at a temperature of 200 to 450 C.
21. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a plurality of holes in an insulating film formed over said semiconductor substrate;
forming a film of a first conductive material by sputtering on said insulating film and on an inner surface and a bottom surface of each of said holes;
removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes;
removing said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
forming a dielectric film on said first electrodes at a predetermined temperature, a material of said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming a film of a second conductive material to serve as second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
22. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a plurality of holes in an insulating material formed over said semiconductor substrate;
forming a film of a first conductive material on said insulating film and on an inner surface and a bottom surface of each of said holes by chemical vapor deposition;
removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes;
removing said insulating film to expose said first conductive material buried, and forming a plurality of first electrodes isolated from one another;
forming a dielectric film on said first electrodes at a predetermined temperature, said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming a film of a second conductive material to serve as second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
23. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a plurality of holes in an insulating film formed over said semiconductor substrate;
forming a film of a first conductive material by sputtering on said insulating film and on an inner surface and a bottom surface of each of said holes;
removing the film of said first conductive material from said insulating material, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
forming a film of the same material as said first conductive material by chemical vapor deposition on only the inner surface and the bottom surface of said holes by utilizing said seed film on the inner surface and the bottom surface of said holes to form first electrodes;
forming a dielectric film on said first electrodes at a predetermined temperature, said first conductive material being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming a film of a second conductive material to serve as second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
24. A semiconductor device comprising:
a semiconductor substrate;
MOS transistors formed over a main surface of said semiconductor substrate and having a source region and a drain region;
plugs each being electrically connected to one of said source and drain regions;
an interlayer insulating film formed on said plugs;
a deposition preventing film disposed on said interlayer insulating film;
first electrodes made of Ru, an oxide of Ru, Ir, an oxide of Ir or Pt, formed on an inner surface and a bottom surface of holes so formed in said interlayer insulating film as to penetrate through said deposition preventing film, and electrically connected to said plugs;
an oxide dielectric film disposed on said first electrodes and on said deposition preventing film; and
second electrodes disposed on said oxide dielectric film;
said first and second electrodes and said oxide dielectric film together consisting capacitors.
25. A method of manufacturing said semiconductor device according to claim 24, wherein said deposition preventing film is made of an oxide of Ti, an oxide of W or an oxide of Ta.
26. A semiconductor device comprising a semiconductor substrate and memory cells formed with said semiconductor substrate, each of said memory cells including a switching transistor and a capacitor, said transistor having a pair of active regions formed in a surface of said semiconductor substrate and a control electrode formed over said semiconductor substrate between said pair of active regions, an insulating film being formed between said control electrode and said active regions in each memory cell, wherein
the capacitor in each memory cell has first and second electrodes and an oxide dielectric film sandwiched between said first and second electrodes, said first electrode being made of Ru, an oxide of Ru, Ir, an oxide of Ir or Pt and electrically connected to one of said pair of active regions through said insulating film, said capacitor being in a shape having a portion not parallel with said substrate for an increased capacitance; and
first electrodes of adjacent capacitors in the memory cells are isolated from each other by a second insulating film of a pattern defining said first electrodes, said oxide dielectric film having its part extending over said second insulating film.
27. A method of manufacturing a semiconductor device comprising a semiconductor substrate and a memory cell formed with said semiconductor substrate, each of said memory cells including a switching transistor and a capacitor, said transistor having a pair of active regions formed in a surface of said semiconductor substrate and a control electrode formed over said semiconductor substrate between said pair of active regions, an insulating film being formed between said control electrode and said active regions in each memory cell, the method comprising the steps of:
forming a first conductive film in a pattern, said first conductive layer serving as a first electrode of said capacitor and being electrically connected to one of said pair of active regions with an insulating film formed therebetween, the first conductive film forming step including forming a deposition preventing film defining said pattern and forming a film of a conductive material in said pattern;
forming an oxide dielectric film on said first conductive layer at a predetermined temperature, said first conductive film being made of Ru, Ir or Pt capable of remaining as an electric conductor even after having been subjected to said predetermined temperature for the oxide dielectric film formation; and
forming a second conductive film on said oxide dielectric film, said second conductive film serving as a second electrode of said capacitor.
28. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a plurality of holes in an insulating film formed over said semiconductor substrate;
forming a film of a first conductive material on said insulating film and on an inner surface and a bottom surface of said holes;
removing the film of said first conductive material from said insulating film, and leaving the film of said first conductive material on the inner surface and the bottom surface of said holes as a seed film;
burying said holes in said insulating film by the same material as said first conductive material by chemical vapor deposition by utilizing said seed film on the inner surface and the bottom surface of said holes;
removing said insulating film to expose said buried first conductive material, and forming a plurality of plugs isolated from one another;
forming a plurality of first electrodes electrically connected to said plugs, respectively, and isolated from one another;
forming an oxide dielectric film on said first electrodes at a predetermined temperature, a material of said first electrode being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
29. A method of manufacturing a semiconductor device including a semiconductor substrate and a plurality of memory cells each having a capacitor formed with said semiconductor substrate, comprising the steps of:
forming a deposition preventing film in an insulating film formed over said semiconductor substrate;
forming a plurality of holes in said insulating film in such a manner as to penetrate through said deposition preventing film;
forming a film of a first conductive material on an inner surface and a bottom surface of each of said holes by chemical vapor deposition by utilizing said deposition preventing film;
burying said holes in said insulating film by chemical vapor deposition by the same material as said first conductive material by utilizing a seed film on the inner surface and the bottom surface of said holes;
removing said insulating film to expose said first conductor material buried, and forming a plurality of first electrodes isolated from one another;
forming a dielectric film on said first electrodes at a predetermined temperature, a material of said first electrode being Ru, Pt or Ir that does not lose conduction even when exposed to said predetermined temperature for forming said dielectric film; and
forming a film of a second conductive material to serve as second electrodes on said dielectric film;
said first and second electrodes and said dielectric film together constituting said capacitors.
30. A method of manufacturing a semiconductor device according to claim 9, wherein formation of the film of said second conductor material comprises a step of forming a film of a third conductive material by sputtering on said dielectric film and a step of forming a film of a fourth conductive material by chemical vapor deposition on the film of said third conductive material.
31. A method of manufacturing a semiconductor device according to claim 21, wherein formation of the film of said second conductive material comprises a step of forming a film of a third conductive material by sputtering on said dielectric film and a step of forming a film of a fourth conductive material by chemical vapor deposition on the film of said third conductive material.
32. A method of manufacturing a semiconductor device according to claim 22, wherein formation of the film of said second conductive material comprises a step of forming a film of a third conductive material by sputtering on said dielectric film and a step of forming a film of a fourth conductive material by chemical vapor deposition on the film of said third conductive material.
33. A method of manufacturing a semiconductor device according to claim 29, wherein formation of the film of said second conductive material comprises a step of forming a film of a third conductive material by sputtering on said dielectric film and a step of forming a film of a fourth conductive material by chemical vapor deposition on the film of said third conductive material.