Author: claimsbot

1. A method of J-laying a pipeline from a vessel, comprising:
lowering the pipeline down an upwardly extending tower assembly of the vessel and then through a lower guide arrangement, the lower guide arrangement including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining the lateral limits of the pipeline, the pipeline undergoing some bending so that the pipeline is less vertical as the pipeline passes through the lower guide arrangement than when the pipeline passes through the tower assembly upstream of the lower guide arrangement; and
monitoring forces applied to the pipeline by rollers of the lower guide arrangement;
wherein each of the sets of guide rollers defines a respective set diameter and the set diameters increase nonlinearly in the direction of travel of the pipeline during laying.
2. A method according to claim 1, employing a pipe-laying vessel comprising:
an upwardly extending tower assembly defining a path down which a pipe of a pipeline passes as the pipeline is being laid by the vessel; and
a lower guide arrangement for guiding the pipeline after it has passed down the tower, the lower guide arrangement including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining the lateral limits of the path, the guide rollers being located such that they allow some bending of the pipeline as it passes through the lower guide arrangement.
3. A method according to claim 2, in which the operation of the vessel is adjusted in dependence upon the monitoring.
4. A method according to claim 2, in which the direction or speed of travel of the vessel is adjusted in dependence upon the monitoring.
5. A method according to claim 1, further comprising monitoring forces exerted on the pipeline by one or more of the guide rollers and adjusting the operation of the vessel in dependence upon the monitoring.
6. A method according to claim 2, further comprising monitoring forces exerted on the pipeline by one or more of the guide rollers and adjusting the operation of the vessel in dependence upon the monitoring.
7. A method according to claim 1, in which the force is monitored with load cells.
8. A method according to claim 7, wherein signals from the load cells are received by a control station.
9. A method according to claim 8, in which the control station provides signals for the operation of piston and cylinder arrangements for operating the guide rollers.
10. A method according to claim 9, in which the signals provided by the control station are passed to a hydraulic supply and control valve station.
11. A method according to claim 1, in which the operation of the vessel is adjusted in dependence upon the monitoring.
12. A method according to claim 1, in which the direction or speed of travel of the vessel is adjusted in dependence upon the monitoring.
13. A method according to claim 1, in which the pipe laying operation is adjusted in dependence upon the monitoring.
14. A method of J-laying a pipeline from a vessel, comprising:
lowering the pipeline down an upwardly extending tower assembly of the vessel and then through a lower guide arrangement, the lower guide arrangement including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining the lateral limits of the pipeline, the pipeline undergoing some bending so that the pipeline is less vertical as the pipeline passes through the lower guide arrangement than when the pipeline passes through the tower assembly upstream of the lower guide arrangement; and
monitoring forces applied to the pipeline by rollers of the lower guide arrangement at each set of rollers of the lower guide arrangement;
wherein each of the sets of guide rollers defines a respective set diameter and the set diameters increase nonlinearly in the direction of travel of the pipeline during laying.
15. A method of J-laying a pipeline from a vessel, comprising:
lowering the pipeline down an upwardly extending tower assembly of the vessel and then through a lower guide arrangement, the lower guide arrangement including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining the lateral limits of the pipeline, each set of guide rollers being arranged to substantially surround the pipeline, the pipeline undergoing some bending so that the pipeline is less vertical as the pipeline passes through the lower guide arrangement than when the pipeline passes through the tower assembly upstream of the lower guide arrangement; and
monitoring forces applied to the pipeline by rollers of the lower guide arrangement at each set of rollers of the lower guide arrangement;
wherein each of the sets of guide rollers defines a respective set diameter and the set diameters increase nonlinearly in the direction of travel of the pipeline during laying.
16. A pipe-laying vessel for J-laying a pipe, the vessel comprising:
an upwardly extending tower assembly defining a path down which a pipe of a pipeline passes as the pipeline is being laid in a J-laying process by the vessel; and
a lower guide arrangement for guiding the pipeline after it has passed down the tower, the lower guide arrangement being substantially trumpet shape, flaring outwardly in the direction of travel of the pipeline during laying, and the lower guide arrangement including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining the lateral limits of the path, and each of the sets of guide rollers defines a respective set diameter and the set diameters increase nonlinearly in the direction of travel of the pipeline during laying the guide rollers being located such that they allow some bending of the pipeline so that the pipeline as the pipeline passes through the lower guide arrangement than when the pipeline passes through the tower assembly upstream of the lower guide arrangement; and
means for monitoring forces applied to the pipeline by rollers of the lower guide arrangement.
17. A method of J-laying a pipeline from a vessel, comprising:
lowering the pipeline down an upwardly extending tower assembly of the vessel and then through a lower guide arrangement, the lower guide arrangement being substantially trumpet shape, flaring outwardly in the direction of travel of the pipeline during laying, the angle of flare increasing in the direction of travel of the pipeline during laying, and including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining the lateral limits of the pipeline, the pipeline undergoing some bending so that the pipeline is less vertical as the pipeline passes through the lower guide arrangement than when the pipeline passes through the tower assembly upstream of the lower guide arrangement;
monitoring forces applied to the pipeline by rollers of the lower guide arrangement; and
providing signals for operation of piston and cylinder arrangements for operating the guide rollers;
wherein each of the sets of guide rollers defines a respective set diameter and the set diameters increase nonlinearly in the direction of travel of the pipeline during laying.
18. A pipe-laying vessel for J-laying a pipe, the vessel comprising:
an upwardly extending tower assembly defining a path down which the pipe passes as a pipeline is being J-laid by the vessel;
a lower guide arrangement for guiding the pipeline after it has passed down the tower, the lower guide arrangement including a plurality of sets of guide rollers spaced apart along the path of the pipeline and defining lateral limits of the path, the guide rollers being located such that they allow some bending of the pipeline so that the pipeline is less vertical as the pipeline passes through the lower guide arrangement than when the pipeline passes through the tower assembly upstream of the lower guide arrangement;
a plurality of sets of adjustable rollers for adjusting a position of the pipeline as it passes through the lower guide arrangement;
means for monitoring forces applied to the pipeline by the adjustable rollers;
piston and cylinder arrangements for operating the adjustable rollers; and
a control station for receiving signals from the force monitoring means and for providing signals for the operation of the piston and cylinder arrangements for operating the adjustable rollers; wherein each of the sets of guide rollers defines a respective set diameter and the set diameters increase nonlinearly in the direction of travel of the pipeline during laying.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for ring-opening (co)polymerization of lactone(s) comprising copolymerization in the presence of a catalytic system comprising a a sulphonamide and a base.
2. The method according to claim 1, wherein the (co)polymerization is of dilactones.
3. The method according to claim 1, wherein the (co)polymerization is of lactide andor glycolide.
4. The method according to claim 3, wherein the (co)polymerization is of lactide.
5. The method according to claim 1, wherein said base is a tertiary amine.
6. The method according to claim 1, wherein said base is:
diisopropylethylamine;
sparteine;
N,N-dimethylcyclohexylamine;
N,N,N\u2033N\u2033 -tetramethyl-1,2-cyclohexanediamine; or
4-dimethylaminopyridine.
7. The method according to claim 1, wherein said sulphonamide is a monosulphonamide.
8. The method according to claim 1, wherein said sulphonamide is a mono sulphonamide of formula (I):
in racemic, or enantiomeric form or any combination thereof, wherein R1 and R2 represent independently an alkyl, halo alkyl or aryl radical, wherein said aryl radical is optionally substituted.
9. The method according to claim 8, wherein R1 and R2 represent independently a phenyl, alkyl or haloalkyl radical.
10. The method according to claim 1, wherein the sulphonamide is:
11. The method according to claim 1, wherein the sulphonamide is a bisulphonamide.
12. The method according to claim 11 wherein the bisulphonamide is of formula (IIa) or (IIb)
in racemic, or enantiomeric form or any combination thereof, wherein
R1 and R2 represent an alkyl, haloalkyl or aryl radical, wherein said aryl radical is optionally substituted;
R\u20321 and R\u20322 represent an arylene, alkylene or cycloalkylene radical, wherein said radicals being optionally substituted; and
R3 and R4 represent independently a hydrogen atom or an alkyl radical.
13. The method according to claim 12, wherein R3 and R4 represent independently a hydrogen atom or a methyl radical.
14. The method according to claim 12, wherein R3 and R4 represent a hydrogen atom.
15. The method according to claim 12, wherein
R1 and R2 represent an optionally substituted phenyl radical, alkyl or haloalkyl;
R\u20321 represents a cycloalkylene, alkylene radical optionally substituted by a phenyl radical; and
R\u20322 represents an alkylene or phenylene radical.
16. The method according to claim 12, wherein R1 and R2 represent an alkyl, trifluoromethyl or phenyl radical optionally substituted by methyl or trifluoromethyl.
17. The method according to claim 12, wherein the sulphonamide is:
18. The method according to claim 12, wherein the sulphonamide is:
19. The method according to claim 1, wherein the base is 4 dimethylaminopyridine.
20. A compound of structure:
21. (canceled)
22. The method according to claim 1 wherein said method is performed in the presence of a solvent at a temperature between 0\xb0 C. and 250\xb0 C., for a duration of a few minutes to 300 hours.
23. The method according to claim 22 wherein said solvent is at a temperature between ambient temperature and 150\xb0 C., for a duration of one hour and to 72 hours.
24. The method according to claim 1, wherein, the lactone(s) is monomeric lactide andor glycolide.
25. The method according to claim 13, wherein R3 and R4 represent a hydrogen atom.

1. A method of making a semiconductor device comprising:
forming a gate insulating film above a semiconductive substrate;
forming a gate electrode on the gate insulating film;
forming in or on the substrate at both sides of the gate electrode a pair of spaced-apart heavily-doped impurity layers of p-type conductivity to a concentration ranging from 5\xd71019 to 1\xd71021 atoms per cubic centimeter (cm3); and
forming a silicide layer by causing the impurity layers to react with a metal while simultaneously applying a compressive strain to the impurity layers.
2. The method of claim 1,
further comprising forming a SixGe1-x (where x is greater than or equal to zero and less than one) layer in or on the substrate at the both sides of the gate electrode,
wherein the impurity layers are formed at least in a region between the gate electrode and the SixGe1-x layer.
3. The method of claim 2,
further comprising
forming a first sidewall insulator film on both side faces of the gate electrode,
etching the substrate with the gate electrode and the first sidewall insulator film being as a mask,
removing the first sidewall insulator film, and
forming on the both faces of the gate electrode a second sidewall insulator film less in thickness than the first sidewall insulator film after having removed the first sidewall insulator film,

wherein
the SixGe1-x layer is formed after etching the substrate and yet prior to removal of the first sidewall insulator film and

wherein
the impurity layers are formed by doping an impurity by ion implantation with the gate electrode and the second sidewall insulator film as a mask.
4. The method of claim 2,
further comprising
forming a sidewall insulator film on both side faces of the gate electrode, and
etching the substrate with the gate electrode and the sidewall insulator film as a mask,

wherein
the impurity layers are formed after having etched the substrate and

wherein
the SixGe1-x layer is formed after having formed the impurity layers.
5. The method of claim 1, wherein the substrate is a silicon substrate and wherein the impurity is boron (B) whereas the metal is nickel (Ni).
6. The method of claim 1, wherein the impurity layers have their lattice constant under application of the compressive strain, the lattice constant being deviated from a lattice constant in a state free from the compressive strain by 0.2 percent (%) or more and less than 1.0% or below.
7. A method of making a semiconductor device comprising:
forming a gate insulating film above a semiconductive substrate;
forming a gate electrode on the gate insulating film;
forming in or on the substrate at both sides of the gate electrode a pair of spaced-apart heavily-doped impurity layers of n-type conductivity to a concentration ranging from 5\xd71019 to 1\xd71021 atomscm3; and
forming a silicide layer by causing the impurity layers to react with a metal while simultaneously applying a tensile strain to the impurity layers.
8. The method of claim 7,
further comprising forming a SixC1-x (where 0\u2266x<1) layer in or on the substrate at the both sides of the gate electrode,
wherein the impurity layers are formed in at least a region between the gate electrode and the SixC1-x layer.
9. The method of claim 8,
further comprising
forming a first sidewall insulator film on both side faces of the gate electrode,
etching the substrate with the gate electrode and the first sidewall insulator film being as a mask, removing the first sidewall insulator film, and
forming on the both faces of the gate electrode a second sidewall insulator film less in thickness than the first sidewall insulator film after having removed the first sidewall insulator film,

wherein
the SixC1-x layer is formed after etching the substrate and yet prior to removal of the first sidewall insulator film and

wherein
the impurity layers are formed by doping an impurity by ion implantation with the gate electrode and the second sidewall insulator film as a mask.
10. The method of claim 8,
further comprising
forming a sidewall insulator film on both side faces of the gate electrode, and
etching the substrate with the gate electrode and the sidewall insulator film as a mask,

wherein
the impurity layers are formed after having etched the substrate and

wherein
the SixC1-x layer is formed after having formed the impurity layers.
11. The method of claim 7, wherein the substrate is a silicon substrate and wherein the impurity is arsenic (As) whereas the metal is nickel (Ni).
12. A semiconductor device comprising:
a channel region in a semiconductor substrate;
a gate insulating film above the channel region;
a gate electrode on the gate insulating film;
a layer of silicon germanium at both sides of the channel region, the silicon germanium being defined by SixGe1-x, where x is greater than or equal to zero (0) but less than one (1);
a heavily-doped impurity layer of p-type conductivity residing between the channel region and the SixGe1-x layer and having an impurity concentration ranging from 5\xd71019 to 1\xd71021 atomcm3; and
a layer of metal silicide on the impurity layer, wherein
the impurity concentration is higher than a concentration of the impurity in the metal silicide layer.
13. The device of claim 12, wherein the substrate is a silicon substrate and wherein the impurity is boron (B) whereas the metal silicide is a nickel silicide (NiSi).
14. A semiconductor device comprising:
a channel region in a semiconductor substrate;
a gate insulating film above the channel region;
a gate electrode on the gate insulating film;
a layer of silicon carbide at both sides of the channel region, the silicon carbide being defined by SixC1-x, where x is more than or equal to zero and less than one;
a heavily-doped impurity layer of n-type conductivity residing between the channel region and the SixC1-x layer and having an impurity concentration ranging from 5\xd71019 to 1\xd71021 atomcm3; and
a layer of metal silicide on the impurity layer, wherein
the impurity concentration is higher than a concentration of the impurity in the metal silicide layer.
15. The device of claim 14, wherein the substrate is a silicon substrate and wherein the impurity is arsenic (As) whereas the metal silicide is nickel silicide (NiSi).

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A metro street address guide (MSAG) validation database, comprising:
a plurality of validated street addresses;
wherein each of said plurality of validated street addresses is correlated with a polygon area defined by latitudelongitude coordinates.
2. The metro street address guide (MSAG) validation database according to claim 1, wherein:
at least some, but not all, of said plurality of validated street addresses are defined by a street address of a corresponding cell tower.
3. A method of generating entries in an MSAG validation database, comprising:
defining, in an MSAG validation database, a plurality of newly defined MSAG-addressed polygons having a greater density than a plurality of existing MSAG-addressed polygons; and
replacing, in said MSAG validation database, said plurality of existing MSAG-addressed polygons with said plurality of newly defined MSAG-addressed polygons.
4. The method of generating entries in an MSAG validation database according to claim 3, wherein:
each of said plurality of newly defined MSAG-addressed polygons is defined by a single street address.
5. The method of generating entries in an MSAG validation database according to claim 4, wherein:
said single street address is a street address of an approximate center of each of said respective plurality of newly defined MSAG-addressed polygons.
6. The method of generating entries in an MSAG validation database according to claim 3, wherein:
each of said plurality of existing MSAG-addressed polygons is defined by a single street address.
7. The method of generating entries in an MSAG validation database according to claim 6, wherein:
said single street address is a street address of an approximate center of each of said respective plurality of existing MSAG-addressed polygons.
8. The method of generating entries in an MSAG validation database according to claim 3, wherein:
each of said plurality of newly defined MSAG-addressed polygons are defined by a plurality of latitudelongitude coordinates.
9. The method of generating entries in an MSAG validation database according to claim 3, wherein:
each of said plurality of existing MSAG-addressed polygons are defined by a plurality of latitudelongitude coordinates.
10. The method of generating entries in an MSAG validation database according to claim 3, wherein:
said number of newly defined MSAG-addressed polygons is greater than said number of existing MSAG-addressed polygons.
11. Apparatus for generating entries in an MSAG validation database, comprising:
means for defining, in an MSAG validation database, a plurality of newly defined MSAG-addressed polygons having a greater density than a plurality of existing MSAG-addressed polygons; and
means for replacing, in said MSAG validation database, said plurality of existing MSAG-addressed polygons with said plurality of newly defined MSAG-addressed polygons.
12. The apparatus for generating entries in an MSAG validation database according to claim 11, wherein:
each of said plurality of newly defined MSAG-addressed polygons is defined by a single street address.
13. The apparatus for generating entries in an MSAG validation database according to claim 12, wherein:
said single street address is a street address of an approximate center of each of said respective plurality of newly defined MSAG-addressed polygons.
14. The apparatus for generating entries in an MSAG validation database according to claim 11, wherein:
each of said plurality of existing MSAG-addressed polygons is defined by a single street address.
15. The apparatus for generating entries in an MSAG validation database according to claim 14, wherein:
said single street address is a street address of an approximate center of each of said respective plurality of existing MSAG-addressed polygons.
16. The apparatus for generating entries in an MSAG validation database according to claim 11, wherein:
each of said plurality of newly defined MSAG-addressed polygons are defined by a plurality of latitudelongitude coordinates.
17. The apparatus for generating entries in an MSAG validation database according to claim 11, wherein:
each of said plurality of existing MSAG-addressed polygons are defined by a plurality of latitudelongitude coordinates.
18. The apparatus for generating entries in an MSAG validation database according to claim 11, wherein:
said number of newly defined MSAG-addressed polygons is greater than said number of existing MSAG-addressed polygons.