Author: claimsbot

1. A semiconductor-based structure, comprising:
a first tensilely strained layer consisting essentially of silicon;
a second tensilely strained layer consisting essentially of silicon, and
a compressively strained layer associated with a p-channel, and consisting essentially of silicon and germanium disposed between and in contact with the first and second tensilely strained layers, the first and second tensilely strained layers impeding diffusion of germanium out of the compressively strained layer.
2. The semiconductor-based structure of claim 1, further comprising a strain-inducing substrate in contact with the first tensilely strained layer, and wherein the first tensilely strained layer has a thickness selected to support an n-type channel.
3. The semiconductor-based structure of claim 2, wherein the thickness is in a range of about 5 nm to about 20 nm.
4. The semiconductor-based structure of claim 2, wherein the second tensilely strained layer has a thickness that is insufficient to support an effective n-type channel.
5. The semiconductor-based structure of claim 2, wherein the thickness of the second tensilely strained layer is in a range of about 1 nm to less than 7 nm.
6. The semiconductor-based structure of claim 1, further comprising a strain-inducing substrate in contact with the first tensilely strained layer, and wherein the first tensilely strained layer has a thickness greater than a diffusion length of germanium.
7. The semiconductor-based structure of claim 1, further comprising a strain-inducing substrate in contact with the first tensilely strained layer, and wherein the first tensilely strained layer has a thickness less than a thickness of the second tensilely strained layer.
8. The semiconductor-based structure of claim 7, wherein the thickness of the first tensilely strained layer is less than about 1.5 nm.
9. The semiconductor-based structure of claim 1, further comprising a strain-inducing substrate in contact with the first tensilely strained layer, and a NMOS component comprising a gate dielectric layer adjacent to the first tensilely strained layer, and a gate in contact with the gate dielectric layer for mediation of a n-type channel formed in at least one of the first and second tensilely strained layers.
10. The semiconductor-based structure of claim 9, wherein the n-type channel is formed at least mostly in the second tensilely strained layer.
11. The semiconductor-based structure of claim 9, wherein the gate dielectric layer is in contact with one of the second tensilely strained layer and the compressively strained layer.
12. The semiconductor-based structure of claim 11, further comprising a PMOS component comprising a gate dielectric layer adjacent to the compressively strained layer, and a gate in contact with the gate dielectric layer for mediation of a p-type channel at least mostly in the compressively strained layer.
13. The semiconductor-based structure of claim 1, further comprising a strain-inducing layer comprising silicon and germanium in contact with the first tensilely strained layer.
14. The semiconductor-based structure of claim 1, further comprising a strain-inducing layer comprising an oxide in contact with the first tensilely strained layer.
15. A semiconductor-based structure, comprising:
a substrate layer;
a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component; and
a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconductor layer, and in contact with the compressively-strained semiconductor layer, the tensilely strained semiconductor layer impeding diffusion of a species out of the compressively strained semiconductor layer.
16. The semiconductor-based structure of claim 15, wherein the compressively strained semiconductor layer consists essentially of silicon and germanium, the tensilely strained semiconductor layer consists essentially of silicon, and the species is germanium.
17. The semiconductor-based structure of claim 15, further comprising a second tensilely strained layer consisting essentially of a third semiconductor in contact with the compressively strained layer on an opposite side of the compressively strained layer relative to the tensilely strained layer.
18. The semiconductor-based structure of claim 15, further comprising at least one PMOS component that primarily utilizes the compressively strained layer for a p-type channel.
19. The semiconductor-based structure of claim 18, further comprising at least one NMOS component that primarily utilizes the tensilely strained layer for a n-type channel.
20. The semiconductor-based structure of claim 15, wherein, for a temperature in a range of about 300\xb0 C. to about 1000\xb0 C., the composition of the tensilely strained layer is selected to provide a diffusivity of Ge in the tensilely strained layer that is less than about 95% of a diffusivity of Ge in the compressively strained layer.
21. A method for making an electronic device, comprising:
providing, on a strain-inducing substrate, a first tensilely strained layer consisting essentially of silicon;
forming a compressively strained layer on the first tensilely strained layer, the compressively strained layer consisting essentially of silicon and germanium; and
forming a second tensilely strained layer on the compressively strained layer, the second tensilely strained layer consisting essentially of silicon.
22. The method of claim 21, wherein the strain-inducing substrate comprises a layer in contact with the first tensilely strained layer, the layer consisting of one of an oxide and relaxed SiGe.
23. The method of claim 22, wherein providing the first tensilely strained layer comprises bonding the first tensilely strained layer to the strain-inducing substrate.
24. The method of claim 21, further comprising removing a portion of the second tensilely strained layer and a portion of the compressively strained layer to at least nearly expose a portion of the first tensilely strained layer, forming a gate dielectric layer adjacent the portion of the first tensilely strained layer, and forming a gate in contact with the gate dielectric layer for mediating a n-type channel in the first tensilely strained layer.
25. The method of claim 24, wherein the gate dielectric layer is in contact with the portion of the first tensilely strained layer.
26. The method of claim 21, further comprising oxidizing at least most of a lateral portion of the second tensilely strained layer, and forming a gate contact of a PMOS component on the oxidized portion.
27. The method of claim 21, further comprising oxidizing at least most of a second lateral portion of the second tensilely strained layer, and forming a gate contact of a NMOS component adjacent to the first strained layer of the lateral portion.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A drilling mud cooler, comprising:
a first mud heat exchanger that is adapted to receive a flow of drilling mud;
a first closed-loop cooling system that is adapted to cool a first cooling fluid that is circulated through said first mud heat exchanger so as to reduce a temperature of said flow of drilling mud from a first temperature to a second temperature;
a second mud heat exchanger that is adapted to receive said flow of reduced temperature drilling mud from said first mud heat exchanger;
a second closed-loop cooling system that is adapted to cool a second cooling fluid that is circulated through said second mud heat exchanger so as to further reduce said temperature of said flow of drilling mud from said second temperature to a third temperature.
2. The drilling mud cooler of claim 1, wherein said first closed-loop cooling system is adapted to be in a mud cooling standby mode when said first temperature is below a predetermined mud temperature.
3. The drilling mud cooler of claim 1, wherein said first closed-loop cooling system comprises an air cooler that is adapted to cool said first cooling fluid.
4. The drilling mud cooler of claim 3, further comprising a fluid circulation pump that is adapted to circulate said first cooling fluid through said air cooler and said first mud heat exchanger.
5. The drilling mud cooler of claim 3, wherein said air cooler comprises a cooling coil and at least one cooling fan, said at least one cooling fan being adapted to draw a flow of air across said cooling coil while said first cooling fluid is circulated through said cooling coil so as to cool said first cooling fluid after said first cooling fluid has been heated in said first mud heat exchanger by said flow of drilling mud.
6. The drilling mud cooler of claim 1, wherein said second closed-loop cooling system is adapted to be in a mud cooling standby mode when said second temperature is below a predetermined mud temperature.
7. The drilling mud cooler of claim 1, wherein said second closed-loop cooling system comprises an evaporator that is adapted to cool said second cooling fluid.
8. The drilling mud cooler of claim 7, further comprising a fluid circulation pump that is adapted to circulate said second cooling fluid through said evaporator and said second mud heat exchanger.
9. The drilling mud cooler of claim 7, wherein said second closed-loop cooling system comprises at least one refrigeration chiller unit, said at least one refrigeration chiller unit comprising a cooling coil that is adapted to circulate of a flow of a refrigerant through said evaporator while said second cooling fluid is circulated through said cooling coil so as to cool said second cooling fluid after said second cooling fluid has been heated in said second mud heat exchanger by said flow of drilling mud.
10. The drilling mud cooler of claim 9, wherein said at least one refrigeration chiller unit further comprises a compressor, a condensing coil disposed in a condensing unit comprising one or more cooling fans, and at least one of an expansion device and a flash tank.
11. The drilling mud cooler of claim 9, wherein said at least one refrigeration chiller unit is a first refrigeration chiller unit and said cooling coil is a first cooling coil that is adapted by circulating a flow of a first refrigerant through said evaporator, said second closed-loop cooling system further comprising a second refrigeration chiller unit that comprises a second cooling coil that is adapted to circulate of a flow of a second refrigerant through said evaporator while said second cooling fluid is circulated through said second cooling coil so as to further cool said second cooling fluid after said second cooling fluid has been heated in said second mud heat exchanger by said flow of drilling mud.
12. The drilling mud cooler of claim 11, wherein said second refrigeration chiller unit is adapted be in a mud cooling standby mode when said third temperature is below a predetermined mud temperature, and wherein operation of said second refrigeration chiller unit is adapted be initiated when said third temperature is at least at said predetermined mud temperature so as to further cool said second cooling fluid.
13. A system for cooling drilling mud, the system comprising:
a drilling mud cooler comprising first and second stage closed-loop cooling systems thermally coupled to respective first and second stage mud heat exchangers, wherein said drilling mud cooler is adapted to receive a flow of drilling mud having a first mud temperature into said first stage mud heat exchanger and to discharge said flow of drilling mud from said second stage mud heat exchanger at a second temperature that is less than said first temperature; and
a control system that is operatively coupled to said drilling mud cooler, wherein said control system is adapted to sequentially stage operation of said first and second stage closed-loop cooling systems by initiating operation of said first stage closed-loop cooling system so as to cool said flow of drilling mud flowing through said first stage mud heat exchanger when said first temperature rises to at least a first predetermined mud temperature and thereafter initiating operation of said second stage closed-loop cooling system so as to further cool said flow of drilling mud flowing through said second stage mud heat exchanger when said second temperature rises to at least at a second predetermined mud temperature.
14. The system of claim 13, wherein said control system is adapted to maintain said first stage closed-loop cooling system in a mud cooling standby mode when said first temperature is below said first predetermined mud temperature and to maintain said second stage closed-loop cooling system in a mud cooling standby mode when said second temperature is below said second predetermined mud temperature.
15. The system of claim 14, wherein said control system is adapted to operate said first stage closed-loop cooling system under a substantially constant operating capacity while said first temperature is above said first predetermined mud temperature and to return said first stage closed-loop cooling system to said mud cooling standby mode when said first temperature drops below said first predetermined mud temperature.
16. The system of claim 15, wherein said substantially constant operating capacity is a maximum operating capacity of said first stage closed-loop cooling system.
17. The system of claim 13, wherein said drilling mud cooler further comprises a first stage fluid circulation pump and said first stage closed-loop cooling system comprises an air cooler, said first stage fluid circulation pump being adapted to circulate a first stage cooling fluid between said first stage mud heat exchanger and said air cooler.
18. The system of claim 17, wherein said first stage mud heat exchanger is adapted to exchange heat between said flow of drilling mud and said first stage cooling fluid so as to cool said flow of drilling mud and to heat said first stage cooling fluid and said air cooler is adapted to cool said heated first stage cooling fluid flowing from said first stage mud heat exchanger.
19. The system of claim 18, wherein said air cooler comprises a cooling coil and a least one cooling fan, said at least one cooling fan being adapted to draw a flow of air across said cooling coil while said first stage cooling fluid is circulated through said cooling coil so as to cool said heated first stage cooling fluid flowing from said first stage mud heat exchanger.
20. The system of claim 13, wherein said drilling mud cooler further comprises a second stage fluid circulation pump and said second stage closed-loop cooling system comprises a refrigeration system, said second stage fluid circulation pump being adapted to circulate a second stage cooling fluid between said second stage mud heat exchanger and said refrigeration system.
21. The system of claim 20, wherein said second stage mud heat exchanger is adapted to exchange heat between said flow of drilling mud and said second stage cooling fluid so as to further cool said flow of drilling mud and to heat said second stage cooling fluid and said refrigeration system is adapted to cool said heated second stage cooling fluid flowing from said second stage mud heat exchanger.
22. The system of claim 21, wherein said refrigeration system comprises first and second refrigeration chiller units, said control system being adapted to maintain said first and second refrigeration chiller units in a cooling standby mode when said second temperature is below said second predetermined mud temperature and to sequentially stage operation of said first and second refrigeration chiller units so as to cool said heated second stage cooling fluid flowing from said second stage mud heat exchanger when said second temperature rises to at least said second predetermined mud temperature.
23. The system of claim 22, wherein said control system is adapted to sequentially stage operation of said first and second refrigeration chiller units by first initiating operation of said first refrigeration chiller unit so as to lower said second temperature below said second predetermined mud temperature and maintaining said second refrigeration chiller unit in said cooling standby mode until said first refrigeration chiller unit alone is unable to keep said second temperature below said second predetermined mud temperature.
24. The system of claim 23, wherein said control system is adapted to sequentially stage operation of said first and second refrigeration chiller units by gradually ramping up operation of said first refrigeration chiller unit to a predetermined maximum unit operating level as a temperature of said flow of drilling mud exiting said drilling mud cooler increases and thereafter initiating operation of said second refrigeration chiller unit when said second temperature rises to at least said second predetermined mud temperature while said first refrigeration chiller unit is being operated at said predetermined maximum unit operating level.
25. A method for cooling drilling mud, the method comprising:
thermally coupling a first closed-loop cooling system to a first mud heat exchanger;
thermally coupling a second closed-loop cooling system to a second mud heat exchanger;
receiving a flow of drilling mud in said first mud heat exchanger;
controlling operation of said first closed-loop cooling system with a control system so as to cool said flow of drilling mud flowing through said first mud heat exchanger when a first temperature of said flow of drilling mud entering said first mud heat exchanger exceeds a predetermined mud set point temperature;
passing said flow of drilling mud from said first mud heat exchanger to said second mud heat exchanger; and
controlling operation of said second closed-loop cooling system with said control system so as to further cool said flow of drilling mud flowing through said second mud heat exchanger when a second temperature of said flow of drilling mud exiting said second mud heat exchanger exceeds said predetermined mud set point temperature.
26. The method of claim 25, wherein controlling operation of said first closed-loop cooling system with said control system comprises maintaining said first closed-loop cooling system in a mud cooling standby mode when said first temperature is below said predetermined mud set point temperature and initiating operation of said first closed-loop cooling system when said first temperature rises to at least said predetermined mud set point temperature.
27. The method of claim 25, wherein thermally coupling said first closed-loop cooling system to said first mud heat exchanger comprises circulating a first cooling fluid through said first closed-loop cooling system and said first mud heat exchanger.
28. The method of claim 27, wherein cooling said flow of drilling mud flowing through said first mud heat exchanger comprises cooling said first cooling fluid in an air cooler of said first closed-loop cooling system by circulating said first cooling fluid through a cooling coil of said air cooler while drawing a flow of air across said cooling coil with one or more cooling fans of said air cooler.
29. The method of claim 25, wherein controlling operation of said second closed-loop cooling system with said control system comprises maintaining said second closed-loop cooling system in a mud cooling standby mode when said second temperature is below said predetermined mud set point temperature and initiating operation of said second closed-loop cooling system when said second temperature rises to at least said predetermined mud set point temperature.
30. The method of claim 25, wherein thermally coupling said second closed-loop cooling system to said second mud heat exchanger comprises circulating a second cooling fluid through said second closed-loop cooling system and said second mud heat exchanger.
31. The method of claim 30, wherein further cooling said flow of drilling mud flowing through said second mud heat exchanger comprises cooling said second cooling fluid in a refrigeration system of said second closed-loop cooling system by circulating said second cooling fluid through an evaporator of said refrigeration system while circulating a refrigerant through said evaporator in at least one of a plurality of cooling coils comprising said refrigeration system.
32. The method of claim 30, wherein said second closed-loop cooling system comprises first and second refrigeration chiller units, the method further comprising sequentially staging operation of said first and second refrigeration chiller units when said second temperature exceeds said predetermined mud set point temperature.
33. The method of claim 32, wherein sequentially staging operation of said first and second refrigeration chiller units comprises first initiating operation of said first refrigeration chiller unit so as to lower said second temperature below said predetermined mud set point temperature while maintaining said second refrigeration chiller unit in a cooling standby mode, and initiating operation of said second refrigeration chiller unit when said first refrigeration chiller unit alone is unable to keep said second temperature below said second predetermined mud temperature.
34. The method of claim 32, wherein sequentially staging operation of said first and second refrigeration chiller units comprises initiating operation of said first refrigeration chiller while maintaining said second refrigeration chiller unit in a cooling standby mode, gradually ramping up operation of said first refrigeration chiller unit to a predetermined maximum unit operating level as a temperature of said flow of drilling mud exiting said second mud heat exchanger increases, and thereafter initiating operation of said second refrigeration chiller unit while maintaining said first refrigeration chiller unit at said predetermined maximum unit operating level.

1.-19. (canceled)
20. A PIN active pixel sensor array with self-aligned encapsulated rear electrodes comprising:
a patterned array of rectangular shaped conductive first electrode elements formed over a substrate and each of the first electrode elements including sidewalls;
each of the first electrode elements further comprising first and second doped semiconducting layers comprising a first doping polarity the first doped semiconducting layer covering the surface portion and the second doped semiconducting layer covering the sidewalls to encapsulate each of the first electrode elements on three sides;
an overlying photoactive charge generating semiconducting layer contacting the first and second semiconducting layers of each of the first electrode elements; and,
a third doped semiconducting layer forming a second electrode element comprising a second doping polarity opposite to the first doping polarity disposed over and contacting the photoactive charge generating semiconducting layer.
21. The PIN active pixel sensor array of claim 21, further comprising a photon transparent layer disposed over and in contact with the second electrode layer.
22. The PIN active pixel sensor array of claim 21, wherein the first and second semiconducting layers and the photoactive charge generating semiconducting layers are formed of an amorphous semiconducting material.
23. The PIN active pixel sensor array of claim 22, wherein the amorphous semiconductor material is selected from the group consisting of silicon, silicon germanium, gallium arsenide, indium phosphide, and silicon carbide.
24. The PIN active pixel sensor array of claim 21, wherein the first electrode elements further comprise one or more layers of metal.
25. The PIN active pixel sensor array of claim 21, wherein the first and second doping polarities comprise one of an N doping and P doping polarity.
26. A PIN sensor comprising:
a first electrode element comprising a conductive upper surface and sidewalls;
a first doped semiconductor on the upper surface;
a second doped semiconductor covering the sidewalls; and,
a photoactive charge generating semiconductor contacting the first and second doped semiconductors.
27. The PIN sensor of claim 26, further comprising a third doped semiconductor layer forming a second electrode on the photoactive charge generating semiconductor.
28. The PIN sensor of claim 27, wherein the third doped semiconductor layer has a charge carrier polarity opposite the first and second doped semiconductors.
29. PIN sensor of claim 27, further comprising a photon transparent electrically conductive layer on the third doped semiconductor layer to form a front electrode.
30. The PIN sensor of claim 26, wherein the first and second doped semiconductors have a first charge carrier polarity selected from the group consisting of P and N polarity.
31. The PIN sensor of claim 26, wherein the first and second doped semiconductors comprise an amorphous semiconducting material.
32. The PIN sensor of claim 26, wherein the photoactive charge generating semiconductor comprises an intrinsic amorphous semiconducting material.
33. The PIN sensor of claim 26, wherein the first and second doped semiconductors comprise the same semiconducting material.
34. The PIN sensor of claim 26, wherein the thickness of the second doped semiconductor has a thickness about equal to or less than the first doped semiconductor.
35. The PIN sensor of claim 26, wherein the first and second doped semiconductors are selected from the group consisting of silicon, silicon germanium, gallium arsenide, indium phosphide, and silicon carbide.
36. The PIN sensor of claim 26, wherein the first electrode element comprises a metal.
37. The PIN sensor of claim 26, wherein the first electrode element communicates with a CMOS transistor.
38. The PIN sensor of claim 26, wherein the first electrode element comprises a PIN active pixel sensor array.
39. A PIN active pixel sensor array with self-aligned encapsulated rear electrodes comprising:
a patterned array of conductive first electrode elements formed over a substrate, each of said first electrode elements comprising a surface portion and sidewall portions;
each of said first electrode elements further comprising first and second doped semiconducting layers, said first doped semiconducting layer covering the surface portion and said second doped semiconducting layer covering the sidewall portions;
a photoactive charge generating semiconducting layer over and contacting the first and second doped semiconducting layers; and,
a third doped semiconducting layer over and contacting the photoactive charge generating semiconducting layer to form a second electrode element.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for providing information in an information management system that manages log information related to electric home appliances in association with each of a plurality of user IDs, the method comprising:
inputting, via a network, information indicating power usage corresponding to each of the plurality of user IDs;
generating a differential value between i) a first cumulative value of power usage corresponding to a first user ID among the plurality of user IDs in a prescribed period and ii) a second cumulative value of power usage corresponding to a second user ID among the plurality of user IDs in a same period as the prescribed period;
generating a first conversion value by converting the differential value to a use time of a first electric home appliance among electric home appliances corresponding to the first user ID;
generating display data indicating that the differential value between i) the first cumulative power usage corresponding to the first user ID and ii) the second cumulative power usage corresponding to the second user ID in the prescribed period corresponds to the first conversion value that is generated by converting the differential value to a use time of the first electric home appliance; and
transmitting the display data to an information terminal device corresponding to the first user ID.
2. The method according to claim 1, wherein
the display data is generated when the first cumulative value is larger than the second cumulative value.
3. The method according to claim 1, wherein
the display data includes the first cumulative value and the second cumulative value.
4. The method according to claim 1, further comprising:
generating a first electricity bill value by converting the differential value to an electricity bill, wherein
the display data includes the first electricity bill value.
5. The method according to claim 1, further comprising:
generating a second electricity bill value by converting the first cumulative value to an electricity bill; and
generating a third electricity bill value by converting the second cumulative value to an electricity bill, wherein
the display data includes the second electricity bill value and the third electricity bill value.
6. The method according to claim 1, wherein
a residence corresponding to the second user ID is located within a prescribed range from a residence corresponding to the first user ID.
7. The method according to claim 1, wherein
a composition of residents in a residence corresponding to the second user ID is the same as a composition of residents in a residence corresponding to the first user ID.
8. The method according to claim 1, wherein
a layout of a residence corresponding to the second user ID is the same as a layout of a residence corresponding to the first user ID.
9. The method according claim 1, wherein
the second user ID is associated with a plurality of second user IDs, and
the second cumulative value is obtained by averaging cumulative values of power usage of electric home appliances corresponding to the plurality of the second user IDs in the prescribed period.
10. The method according to claim 1, wherein
the first electric home appliance includes a first electric home appliance with highest power usage among the electric home appliances corresponding to the first user ID in the prescribed period.
11. The method according to claim 1, wherein
the first electric home appliance includes a first electric home appliance with a longest use time among the electric home appliances corresponding to the first user ID in the prescribed period.
12. The method according to claim 1, further comprising:
obtaining a divided value by dividing the differential value using power consumption of the first electric home appliance, to use the obtained divided value as the first conversion value.
13. The method according to claim 1, wherein
the first electric home appliance includes one of an air conditioner, a television set, and a lighting fixture.
14. The method according to claim 1, further comprising:
generating, when the first conversion value exceeds a prescribed upper limit value, a second conversion value by converting a portion of the differential value to a use time of the first electric home appliance;
generating a third conversion value by converting the remaining portion of the differential value to a use time of a second electric home appliance among the electric home appliances corresponding to the first user ID; and
generating the display data which indicates that the differential value corresponds to i) the second conversion value that is generated by converting a portion of the differential value to a use time of the first electric home appliance and to ii) the third conversion value that is generated by converting the remaining portion of the differential value to a use time of the second electric home appliance.
15. The method according to claim 14, wherein
the first electric home appliance includes a first electric home appliance with highest power usage among the electric home appliances corresponding to the first user ID in the prescribed period, and
the second electric home appliance includes a second electric home appliance with second highest power usage among the electric home appliances corresponding to the first user ID in the prescribed period.
16. The method according to claim 14, wherein
the first electric home appliance includes a first electric home appliance with a longest use time among the electric home appliances corresponding to the first user ID in the prescribed period, and
the second electric home appliance includes a second electric home appliance with a second longest use time among the electric home appliances corresponding to the first user ID in the prescribed period.
17. The method according to claim 14, wherein
the first electric home appliance includes an air conditioner, a television set, or a lighting fixture, and
the second electric home appliance includes an air conditioner, a television set, or a lighting fixture.
18. The method according to claim 1, wherein
the prescribed period includes one month.
19. The method according to claim 1, wherein
the prescribed period includes one week.
20. The method according to claim 1, wherein
the first electric home appliance includes an electric home appliance installed in a prescribed room.
21. The method according to claim 20, wherein
the prescribed room includes a living room.
22. The method according to claim 1, wherein
the log information related to the electric home appliance includes information indicating a use time of the electric home appliance.
23. The method according to claim 1, wherein
the log information related to the electric home appliance includes information indicating a use time slot of the electric home appliance on each day.
24. The method according to claim 1, wherein
the first electric home appliance does not include an electric home appliance of a type in which power-on state continues all day.
25. The method according to claim 24, wherein
the electric home appliance of the type in which power-on state continues all day includes a refrigerator.