Author: claimsbot

1. A method comprising:
generating, independently of a spanning tree protocol instance, a first protocol message identifying a best root node of a spanning tree implemented by an access domain;
transmitting, by the first aggregation node, the first protocol message to a plurality of access nodes of the access domain;
receiving data traffic from the plurality of access nodes, each access node of the plurality of access nodes implementing a spanning tree protocol instance that selects the best root node as a root node of the spanning tree; and
aggregating the data traffic and other data traffic of a plurality of access domains and transmitting the aggregated data traffic to an aggregation network.
2. The method of claim 1, the spanning tree further comprising:
a second aggregation node configured to transmit a second protocol message identifying the second aggregation node as a second best root node of the spanning tree.
3. The method of claim 1, further comprising:
receiving, at the first aggregation node, a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
communicating the topology change to an element of the aggregation network.
4. The method of claim 1, further comprising:
receiving, at the first aggregation node, a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
communicating the topology change to a first subset of the plurality of access nodes.
5. The method of claim 1, further comprising:
receiving, at the first aggregation node, a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
forwarding the spanning tree protocol message over a pseudowire connection to allow a second aggregation node to communicate the topology change to a second subset of the plurality of access nodes.
6. The method of claim 1, further comprising:
sensing a failure of the best root node; and
transmitting a second protocol message from the first aggregation node, the second root message identifying the best root node as a third best root node of the spanning tree.
7. The method of claim 6, further comprising:
sensing a recovery of the best root node;
waiting for a predetermined period of time; and
transmitting the first protocol message from the first aggregation node.
8. The method of claim 1, the first protocol message identifying the first aggregation node or a virtual node of the aggregation network as the best root node.
9. The method of claim 1, further comprising:
receiving a subset of additional data traffic of a plurality of virtual local access networks, the additional data traffic of the plurality of virtual local access networks load balanced between the first aggregation node and a second aggregation node.
10. An apparatus comprising:
a memory configured to store computer executable instructions; and
one or more processors coupled to the memory, the processors configured, when executing the instructions, to:
generate, independently of a spanning tree protocol instance, a first protocol message identifying a best root node of a spanning tree implemented by an access domain;
transmit the first protocol message from a first aggregation node to a plurality of access nodes of the access domain;
receive data traffic from the plurality of access nodes, each access node of the plurality of access nodes implementing a spanning tree protocol instance that selects the best root node as a root node of the spanning tree; and
aggregate the data traffic and other data traffic of a plurality of access domains and transmit the aggregated data traffic to an aggregation network.
11. The apparatus of claim 10, the spanning tree further comprising:
a second aggregation node configured to transmit a second protocol message identifying the second aggregation node as a second best root node of the spanning tree.
12. The apparatus of claim 10, the processors further configured to:
receive a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
communicate the topology change to an element of the aggregation network.
13. The apparatus of claim 10, the processors further configured to:
receive a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
communicate the topology change to a first subset of the plurality of access nodes.
14. The apparatus of claim 10, the processors further configured to:
receive a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
forward the spanning tree protocol message over a pseudowire connection to allow a second aggregation node to communicate the topology change to a second subset of the plurality of access nodes.
15. The apparatus of claim 10, the processors further configured to:
sense a failure of the best root node; and
transmit a second protocol message from the first aggregation node, the second protocol message identifying the best root node as a third best root node of the spanning tree.
16. The apparatus of claim 10, the processors further configured to:
sense a recovery of the best root node;
wait for a predetermined period of time; and
transmit the first protocol message from the first aggregation node.
17. The apparatus of claim 10, the first protocol message identifying the first aggregation node or a virtual node of the aggregation network as the best root node.
18. The apparatus of claim 10, the processors further configured to:
receive a subset of additional data traffic of a plurality of virtual local access networks, the additional data traffic of the plurality of virtual local access networks load balanced between the first aggregation node and a second aggregation node.
19. A tangible computer-readable medium having computer-executable code, when executed by a computer operable to:
generate, independently of a spanning tree protocol instance, a first protocol message identifying a best root node of a spanning tree implemented by an access domain;
transmit the first protocol message from a first aggregation node to a plurality of access nodes of the access domain;
receive data traffic from the plurality of access nodes, each access node of the plurality of access nodes implementing a spanning tree protocol instance that selects the best root node as a root node of the spanning tree; and
aggregate the data traffic and other data traffic of a plurality of access domains and transmit the aggregated data traffic to an aggregation network.
20. The medium of claim 20, the spanning tree further comprising:
a second aggregation node configured to transmit a second protocol message identifying the second aggregation node as a second best root node of the spanning tree.
21. The medium of claim 20, the medium further operable to:
sense a failure of the best root node; and
transmit a second protocol message from the first aggregation node, the second protocol message identifying the best root node as a third best root node of the spanning tree.
22. The medium of claim 20, the medium further operable to:
sense a recovery of the best root node;
wait for a predetermined period of time; and
transmit the first protocol message from the first aggregation node.
23. The medium of claim 20, the medium further operable to:
receive a spanning tree protocol message from an access node, the spanning tree protocol message identifying a topology change of the access domain; and
communicate the topology change to one or more of the following:
an element of the aggregation network;
a second aggregation node; and
an access node of the plurality of access nodes.
24. The medium of claim 20, the medium further operable to:
receive a subset of additional data traffic of a plurality of virtual local access networks, the additional data traffic of the plurality of virtual local access networks load balanced between the first aggregation node and a second aggregation node.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for cleaning a chalkboard, wherein the chalkboard is substantially upright standing, said chalkboard having first and second opposing ends, and top and bottom opposing edges, said apparatus comprising;
a) a rail disposed on said top edge of said chalkboard, said rail extending from said first end to said second end of said chalkboard, said rail having a channel therein, said rail having end caps on said first and second ends thereof; and,
b) a chalkboard cleaning member being removably disposed on said rail whereby the chalkboard cleaning member cleans the chalkboard while moving along the rail from the first end to the second end of the chalkboard, wherein said chalkboard cleaning member comprises;
i) a support bracket having upper and lower opposing ends, a front and rear edge, and a top and bottom side wherein said bottom side is oriented toward said chalkboard;
ii) a wheel being disposed on said upper end of said support bracket, wherein said wheel is inserted into said channel of said rail to permit the support bracket to move along the rail from the first end to the second end of the chalkboard;
iii) a reservoir containing fluid being removably disposed on said top side of said support bracket, said reservoir having upper and lower ends;
iv) a sponge being fixed on said bottom side of said support bracket to permit the sponge to make contact with the chalkboard so that the sponge can clean the chalkboard, said sponge extending from said upper to the lower end of said support bracket;
v) a plurality of spray nozzles being disposed on said bottom side of said support bracket in a spaced apart manner, wherein fluid from said spray nozzles are directed toward said sponge to permit the chalkboard to be cleaned;
vi) a pump being disposed on said reservoir for pumping fluid from said reservoir to said spray nozzles to permit fluid from the reservoir to be sprayed into the sponge; and
vii) a handle being disposed on said reservoir to permit a user to grasp the handle and thereby move the support bracket.
2. The apparatus of claim 1, wherein said support bracket is adjustable in length to permit it to fit various sizes of chalkboards.
3. The apparatus of claim 2, wherein said support bracket comprises an outer sleeve portion having an aperture therein and an inner sleeve portion having a plurality of spaced apart apertures therein, wherein said inner sleeve telescopes within said outer sleeve to permit the length of the support bracket to be varied, further comprising a pin which is inserted through said aperture of said outer sleeve into one of the co-aligned said plurality of apertures of said inner sleeve so as to secure said inner sleeve to said outer sleeve to permit the support bracket to be secured in a selected position.
4. The apparatus of claim 3, wherein said wheel rotates on a shaft, said shaft being disposed on said bottom side of said upper end of said support bracket, wherein said shaft is mounted perpendicular to said support bracket to permit the support bracket to move along the rail from the first end to the second end of the chalkboard.
5. The apparatus of claim 4, wherein said shaft of said wheel is extendably retractable along its longitudinal length to permit the support bracket to be moved away from the chalkboard so that the support bracket can be repositioned.
6. The apparatus of claim 5, wherein said shaft of said wheel is spring loaded to permit the shaft to be extendably retractable along its longitudinal length.
7. The apparatus of claim 6, wherein said pump is manually operated, further comprising a pump actuator button being disposed on said reservoir to permit a user to operate the pump.
8. The apparatus of claim 7, further comprising a fill cap being disposed on said reservoir to permit fluid to be placed in the reservoir.
9. The apparatus of claim 8, wherein said fill cap is disposed on said upper end of said reservoir further comprising a reservoir bracket for attaching said upper end of said reservoir to said support bracket.
10. The apparatus of claim 9, further comprising a semi-circular clip disposed on said top side of said support bracket, wherein said clip partially surrounds said lower end of said reservoir to permit the reservoir to be secured onto the support bracket.
11. The apparatus of claim 10, wherein said sponge is about 55 inches in length to permit use with a standard chalkboard.
12. The apparatus of claim 11, further comprising an additional rail being disposed on said chalkboard, wherein said additional rail is disposed on said bottom edge of said chalkboard.
13. The apparatus of claim 12, further comprising an additional wheel being disposed on said bottom end of said support bracket for insertion into said additional rail to permit the support bracket to move along the rail from the first end to the second end of the chalkboard.

1. A coordinate detection apparatus comprising:
a resistance-film formed on a substrate;
a plurality of resistance-film removal areas formed on a marginal area of the substrate, each of the resistance-film removal areas is formed by removing a portion of the resistance-film; and
a common electrode configured to apply a voltage to the resistance-film, the common electrode including potential supply parts each configured to apply the voltage to the resistance-film,
wherein each of the potential supply parts is provided at a position between adjacent resistance-film removal areas,
wherein the resistance-film removal areas are configured and arranged so that a uniform potential distribution is generated in the resistance-film when the voltage is applied to the resistance film, and
wherein each of the potential supply parts is formed so that a contact area between the common electrode and the resistance-film per unit length is gradually reduced from a middle portion of each side of the substrate toward each end of the side.
2. The coordinate detection apparatus as claimed in claim 1, further comprising:
a plurality of second resistance-film removal areas formed along the common electrode on an inner side of an area surrounded by the common electrode.
3. The coordinate detection apparatus as claimed in claim 1, wherein at least one of pitches of the resistance-film removal areas and intervals between adjacent resistance-film removal areas are equal to each other, respectively.
4. The coordinate detection apparatus as claimed in claim 1, wherein each of the resistance-film removal areas has the same shape.
5. A coordinate detection apparatus comprising:
a resistance-film formed on a substrate;
a plurality of resistance-film removal areas formed on a marginal area of the substrate, each of the resistance-film removal areas is formed by removing a portion of the resistance-film; and
a common electrode configured to apply a voltage to the resistance-film, the common electrode including potential supply parts each configured to apply the voltage to the resistance-film,
wherein each of the potential supply parts is provided at a position between adjacent resistance-film removal areas,
wherein the resistance-film removal areas are configured and arranged so that a uniform potential distribution is generated in the resistance-film when the voltage is applied to the resistance film, and
wherein each of the potential supply parts is formed so that a number of the potential supply parts per unit length is gradually reduced from a middle portion of each side of the substrate toward each end of the side.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A process, comprising:
producing metallization levels within insulating regions comprising a first material having a first dielectric constant, and
producing at least one metal-insulator-metal capacitor comprising the formation of metal electrodes in at least one metallization level,
wherein producing the capacitor comprises locally replacing the first material that is located between the metal electrodes with at least one second material having a second dielectric constant greater than the first dielectric constant.
2. The process according to claim 1, wherein the second dielectric constant is greater than or equal to six and the first dielectric constant is less than six.
3. The process according to claim 2, wherein the second dielectric constant is greater than twenty.
4. The process according to claim 1, wherein locally replacing comprises selectively etching the first material from between the metal electrodes, and depositing the second material in the cavity resulting from selectively etching.
5. The process according to claim 4 wherein selectively etching comprises forming a mask with an opening exposing a region at least between the metal electrodes and removing through the opening in the mask the first material from between the metal electrodes.
6. The process according to claim 1, further comprising producing at least one additional metallization level above the at least one metal-insulator-metal capacitor, after locally replacing the first material with the second material.
7. The process according to claim 6, wherein producing each metallization level comprises forming a barrier layer on an immediately underlying metallization level, and wherein the operation of locally replacing the first material with the second material is performed before said barrier layer is formed.
8. The process according to claim 6, wherein producing each metallization level comprises forming a barrier layer on an immediately underlying metallization level, and wherein the operation of locally replacing the first material with the second material is performed after said barrier layer is formed.
9. The process according to claim 1, wherein the metal electrodes for one capacitor are produced in just one metallization level.
10. The process according to claim 1, wherein the metal electrodes for one capacitor are produced in several superposed metallization levels.
11. The process according to claim 1, wherein the metal electrodes are formed with an interdigitated configuration.
12. An integrated circuit, comprising:
an interconnect part comprising metallization levels produced within insulating regions comprising a first material having a first dielectric constant,
at least one metal-insulator-metal capacitor comprising metal electrodes placed on at least one metallization level and surrounded directly or indirectly by said first material, and
a second material having a second dielectric constant positioned between the metal electrodes, the second dielectric constant being higher than the first dielectric constant.
13. The integrated circuit according to claim 12, wherein the first dielectric constant is less than six and the second dielectric constant is greater than six.
14. The integrated circuit according to claim 12, wherein the second dielectric constant is greater than twenty.
15. The integrated circuit according to claim 12, wherein the electrodes for one capacitor are located in just one metallization level.
16. The integrated circuit according to claim 12, wherein the electrodes for one capacitor are located in several superposed metallization levels.
17. The integrated circuit according to claim 12, wherein the metal electrodes have an interdigitated configuration.
18. The integrated circuit according to claim 12, wherein the interconnect part comprises at least one additional metallization level above the metallization level that contains the electrodes of the capacitor.
19. The integrated circuit according to claim 12, further comprising a barrier layer between superposed metallization levels.
20. A process, comprising:
producing an insulating layer for a first metallization level, the insulating layer formed of a first material having a first dielectric constant;
producing metal electrodes of a capacitor in the insulating layer of the first metallization level;
forming a mask over the insulating layer which includes an opening that exposes at least a region of the first material located between the metal electrodes;
removing, through the opening in the mask, the first material of the insulating layer from the region located between the metal electrodes to produce a cavity;
filling the cavity with a second material having a second dielectric constant that is greater than the first dielectric constant.
21. The process according to claim 20, wherein the second dielectric constant is greater than or equal to six and the first dielectric constant is less than six.
22. The process according to claim 20, further comprising forming a barrier layer over the insulating layer, and wherein the mask is formed over the barrier layer and the opening extends through both the mask and the barrier layer.
23. The process according to claim 20, further comprising:
producing an insulating layer for a second metallization level below the first metallization level, the insulating layer formed of the first material having the first dielectric constant; and
producing metal electrodes of the capacitor in the insulating layer of the second metallization level;
wherein removing comprises removing, through the opening in the mask, the first material of the insulating layers for the first and second metallization levels from the region located between the metal electrodes to produce a cavity in both the first and second metallization levels; and
wherein filling, comprises filling the cavity in both the first and second metallization levels with the second material having the second dielectric constant.
24. The process according to claim 20, wherein producing metal electrodes comprises producing metal electrodes with an interdigitated configuration.