Author: claimsbot

1. A forward and lateral tracking system, comprising a moving carrier and a remote control device, wherein
the moving carrier comprises a control device, a front frame, a first lateral frame, a second lateral frame, and at least a driving device;
the control device is configured inside the moving carrier;
the front frame is configured on the moving carrier with a first IR (infra-red) receiver configured adjacent to a first lateral side, a second IR receiver configured adjacent to a second lateral side, and a first supersonic detector configured between the first and second IR receivers on the front frame;
the first and second IR receivers, and the first supersonic detector are electrically connected with the control device;
the first lateral frame is configured on the moving carrier having a front end joined to a first lateral end of the front frame with a second supersonic detector configured adjacent to the front end of the first lateral frame, a third supersonic detector configured adjacent to a back end of the first lateral frame, and a third IR receiver configured between the second and third supersonic detector;
the second and third supersonic detectors, and the third IR receiver are electrically connected with the control device;
the second lateral frame is configured on the moving carrier having a front end joined to a second lateral end of the front frame with a fourth supersonic detector configured adjacent to the front end of the second lateral frame, a fifth supersonic detector configured adjacent to a back end of the second lateral frame, and a fourth IR receiver configured between the fourth and fifth supersonic detector;
the fourth and fifth supersonic detectors, and the fourth IR receiver are electrically connected with the control device;
the driving unit is configured in the moving carrier and electrically connected with the control device;
the control device directs the driving unit to move forward, to turn to the first lateral side, or to turn to the second lateral side; and
the remote control device comprises at least an IR transmitter signally linked with the first, second, third, and fourth IR receivers.
2. The forward and lateral tracking system according to claim 1, wherein the control device operates in one of an automatic mode and a manual mode.
3. The forward and lateral tracking system according to claim 2, wherein the automatic mode is further configured to be a forward tracking mode, a first lateral tracking mode, a second lateral tracking mode, or an ONSTOP mode to toggle between an ON or STOP state of the moving carrier.
4. The forward and lateral tracking system according to claim 1, wherein the remote control device further comprises at least a forward tracking button, a first lateral tracking button, a second lateral tracking button, a toggle button, and a plurality of direction control buttons; the remote control device and the control device are configured with an identification code; and, after an authentication process based on the identification code between the remote control device and the control device is successfully finished, the IR transmitter of the remote control device is signally linked to the first, second, third, and fourth IR receivers.
5. The forward and lateral tracking system according to claim 1, wherein the moving carrier further comprises at least a battery providing the required electricity to the driving unit and the control device.
6. A control method for a forward and lateral tracking system, comprising the steps of:
setting a control device of a moving carrier of the forward and lateral tracking system to operate in an automatic mode or in a manual mode;
when the automatic mode is set, setting the control device to operate in a forward tracking mode, a first lateral tracking mode, a second lateral tracking mode, or an ONSTOP mode to toggle between an ON or STOP state of the moving carrier; and
when the forward tracking mode is set, activating a first IR receiver, a second IR receiver, and a first supersonic detector on a front frame of the moving carrier, where, for a user straight ahead the moving carrier, the first and second IR receivers detect the user’s left and right moving directions whereas the first supersonic detector detects a forward distance between the user and the moving carrier, and, as such, the control device automatically control the moving carrier to follow the user at a constant distance behind;
when the first lateral tracking mode is set, activating a second supersonic detector, a third supersonic detector, and a third IR receiver on a first lateral frame, where, the second and third supersonic detectors, based on a triangulation method, detect the user’s left and right moving directions and a distance between the user and the moving carrier by the third IR receiver; and, as such, the control device is able to automatically control the moving carrier to follow the user at a constant distance behind;
when the second lateral tracking mode is set, activating a fourth supersonic detector, a fifth supersonic detector, and a fourth IR receiver on a second lateral frame, where, the fourth and fifth supersonic detectors, based on a triangulation method, detect the user’s left and right moving directions and a distance between the user and the moving carrier by the fourth IR receiver; and, as such, the control device is able to automatically control the moving carrier to follow the user at a constant distance behind.
7. The control method according to claim 6, wherein, when the forward tracking mode is set, the user carries a remote control device of the forward and lateral tracking system and moves ahead of the moving carrier; an IR transmitter of the remote control device emits an IR signal; if the IR signal is received by both the first and second IR receivers, the control device determines that the user is moving straight ahead of the moving carrier, and instructs a driving unit of the moving carrier to drive the moving carrier to move straight ahead; when the user turns to a first lateral side, the second IR receiver does not receive the IR signal from the IR transmitter and the control device determines that the user has turned to the first lateral side, and instructs the driving unit to drive the moving carrier to move towards the first lateral side; when the user turns to a second lateral side, the first IR receiver does not receive the IR signal from the IR transmitter and the control device determines that the user has turned to the second lateral side, and instructs the driving unit to drive the moving carrier to move towards the second lateral side.
8. The control method according to claim 6, wherein, when the first lateral tracking mode is set, the user carries the remote control device and is at the first lateral side of the moving carrier, moving straight away from the first lateral frame; the second and third supersonic detectors detect the moving direction of the user using a triangulation method; when the second and third supersonic detectors obtain identical feedback signals, the control device determines that the user is moving straight towards the first lateral side, and instructs the driving unit to drive the moving carrier to move towards the first lateral side; when the user turns to hisher first lateral side, the second supersonic detector receives a smaller feedback signal than that received by the third supersonic detector, the control device determines that the user is moving towards hisher first lateral side, and instructs the driving unit to drive the moving carrier to turn towards the same direction and follow the user; when the user turns to hisher second lateral side, the second supersonic detector receives a greater feedback signal than that received by the third supersonic detector, the control device determines that the user is moving towards hisher second lateral side, and instructs the driving unit to drive the moving carrier to turn towards the same direction and follow the user.
9. The control method according to claim 6, wherein, when the second lateral tracking mode is set, the user carries the remote control device and is at the second lateral side of the moving carrier, moving straight away from the second lateral frame; the fourth and fifth supersonic detectors detect the moving direction of the user using a triangulation method; when the fourth and fifth supersonic detectors obtain identical feedback signals, the control device determines that the user is moving straight towards the second lateral side, and instructs the driving unit to drive the moving carrier to move towards the second lateral side; when the user turns to hisher first lateral side, the fourth supersonic detector receives a greater feedback signal than that received by the fifth supersonic detector, the control device determines that the user is moving towards hisher first lateral side, and instructs the driving unit to drive the moving carrier to turn towards the same direction and follow the user; when the user turns to hisher second lateral side, the fourth supersonic detector receives a smaller feedback signal than that received by the fifth supersonic detector, the control device determines that the user is moving towards hisher second lateral side, and instructs the driving unit to drive the moving carrier to turn towards the same direction and follow the user.
10. The control method according to claim 6, wherein, when the forward tracking, first lateral tracking, second lateral tracking, or manual mode is set, the first supersonic detector is always activated; and the first supersonic detector detects whether there is an obstacle or barrier in front of the moving carrier.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A ferromagnetic tunnel junction, comprising:
a pinned magnetic layer;
a tunnel insulating film formed on the pinned magnetic layer; and
a free magnetic multilayer body formed on the tunnel insulating film;
wherein the free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film, the first free magnetic layer and the second free magnetic layer being ferromagnetically coupled with each other,
a magnetization direction of the first free magnetic layer and a magnetization direction of the second free magnetic layers being parallel to each other,
the first free magnetic layer containing CoFe and at least one additive element selected from the group consisting of B, C, Al, Si, Zr, and P; and
the diffusion barrier layer being formed of any one of the elements selected from the group consisting of Ta, Ti and Hf, the diffusion barrier layer inhibiting the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
2. The ferromagnetic tunnel junction as claimed in claim 1, wherein the second free magnetic layer is made of a material having lower coercivity than the first free magnetic layer.
3. The ferromagnetic tunnel junction as claimed in claim 1, wherein the tunnel insulating film is formed of any one of an oxide, a nitride, and an oxynitride of any one of elements selected from the group consisting of Mg, Al, Ti, and Zr.
4. The ferromagnetic tunnel junction as claimed in claim 3,
wherein the tunnel insulating film is formed of MgO whose (001) face is parallel to a face of the film; and
the pinned magnetic layer is formed of CoFe, or formed of CoFe and at least one additive element selected from the group consisting of B, C, Al, Si, Zr, and P.
5. A magnetic head comprising:
the ferromagnetic tunnel junction of claim 1.
6. A magnetic recording device, comprising:
the magnetic head of claim 5; and
a magnetic recording medium.
7. A magnetic memory device, comprising:
the ferromagnetic tunnel junction of claim 1;
a writing unit configured to apply a magnetic field to the ferromagnetic tunnel junction so as to orient magnetizations of the first free magnetic layer and the second free magnetic layer into predetermined directions; and
a reading unit configured to supply a sense current to the ferromagnetic tunnel junction so as to detect a tunneling resistance.
8. A magnetic memory device as claimed in claim 7, further comprising:
bit lines and word lines crossing but not in contact with each other to form memory cells in a matrix form;
wherein the bit lines and the word lines are arranged in a direction perpendicular to a layer face of the ferromagnetic tunnel junction, interposing a plurality of the ferromagnetic tunnel junctions therebetween; and
the writing unit is configured to supply current simultaneously to at least one of the bit lines and at least one of the word lines, thereby applying a magnetic field parallel and perpendicular to faces of the first free magnetic layer and the second free magnetic layer of the corresponding ferromagnetic tunnel junction so as to orient the magnetizations of the first free magnetic layer and the second free magnetic layer to the predetermined directions.
9. The magnetic memory device as claimed in claim 7,
wherein each of the memory cells includes a second word line and a MOS field effect transistor including a control electrode and two current supply electrodes;
the second word line is electrically connected to the control electrode;
the ferromagnetic tunnel junction is connected between one of the bit lines and either one of the current supply electrodes; and
the reading unit turns on the MOS field effect transistor by setting the second word line to a predetermined voltage, supplies a sense current between said one of the bit lines and said either one of the current supply electrodes, and detects a tunneling resistance.

1. A polishing pad comprising:
one or more anodes formed in the polishing pad at or near a polishing surface of the polishing pad; and
one or more cathodes formed in the polishing pad at or near the polishing surface of the polishing pad and electrically isolated from the one or more anodes.
2. The polishing pad of claim 1, further including non-conducting elements formed in the polishing pad to provide the electrical isolation between the one or more anodes and the one or more cathodes.
3. The polishing pad of claim 1, further including a wiring network connected to the one or more anodes and the one or more cathodes.
4. The polishing pad of claim 3, further including:
an electrical connector electrically connected to the wiring network and adapted to maintain electrical contact with the wiring network when the polishing pad is in motion.
5. The polishing pad of claim 4, further including:
a current source electrically connected to the electrical connector and adapted to provide a current to the one or more anodes and the one or more cathodes through the electrical connector and the wiring network.
6. The polishing pad of claim 1, further including one or more grooves formed in the polishing surface of the polishing pad.
7. The polishing pad of claim 1, further including a transparent window.
8. A method of using a chemical mechanical polishing (CMP) tool to perform electrochemical mechanical polishing (ECMP) of a substrate having metal formed thereon, the method comprising:
providing a polishing pad having one or more anodes formed in the polishing pad at or near a polishing surface of the polishing pad, and one or wore cathodes formed in the polishing pad at or near the polishing surface of the polishing pad and electrically isolated from the one or more anodes;
introducing an electrolytic polishing fluid between the substrate and the polishing surface so as to establish an electrical circuit between the one or more anodes, the metal, and the one or more cathodes;
providing a current to the one or more anodes and the one or more cathodes to cause electrochemical migration of metal ions from the metal into the electrolytic polishing solution; and
pressing the substrate against the polishing surface while moving at least one of the polishing pad and the substrate.
9. The method of claim 8, wherein moving at least one of the polishing pad and the wafer includes rotating at least one of the polishing pad and the substrate.
10. The method of claim 8, wherein the current is proportional to a removal rate of metal, and including providing different amounts of current to select anodes and cathodes to vary the removal rate of metal over the metal layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A magnetic junction for use in a magnetic device comprising:
a pinned layer;
a nonmagnetic spacer layer; and
a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, the at least two magnetic layers being exchange coupled.
2. The magnetic junction of claim 1 wherein the at least two magnetic layers include a first magnetic layer having a weak in-plane anisotropy and a second magnetic layer having a high perpendicular anisotropy.
3. The magnetic junction of claim 2 wherein the weak in-plane anisotropy includes a demagnetization field minus a perpendicular anisotropy, the perpendicular anisotropy being less than the demagnetization field.
4. The magnetic junction of claim 3 wherein the perpendicular anisotropy is at least 0.4 multiplied by the demagnetization field and not more than 0.9 multiplied by the demagnetization field.
5. The magnetic junction of claim 2 wherein the second ferromagnetic layer includes a demagnetization energy and a perpendicular anisotropy energy corresponding to the high perpendicular anisotropy, the perpendicular anisotropy energy exceeding the demagnetization energy.
6. The magnetic junction of claim 2 wherein the magnetic substructure has a desired exchange coupling, the insertion layer has a thickness tailored to provide the desired exchange coupling.
7. The magnetic junction of claim 1 wherein the at least two magnetic layers includes a third magnetic layer wherein the at least one insertion layer includes a second insertion layer adjoining the third magnetic layer.
8. The magnetic junction of claim 1 wherein the free layer includes the magnetic substructure.
9. The magnetic junction of claim 1 wherein the pinned layer includes the magnetic substructure.
10. The magnetic junction of claim 1 wherein both the pinned layer and the free layer include the magnetic substructure.
11. The magnetic junction of claim 2 further comprising:
an additional nonmagnetic layer; and
an additional pinned layer, the nonmagnetic layer residing between the free layer and the additional pinned layer.
12. The magnetic junction of claim 11 wherein the additional pinned layer includes an additional magnetic substructure having at least two additional magnetic layers interleaved with at least one additional insertion layer, the at least two additional magnetic layers being exchange coupled.
13. A magnetic memory comprising:
a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a pinned layer, a nonmagnetic spacer layer, and a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, the at least two magnetic layers being exchange coupled; and
a plurality of bit lines.
14. The memory of claim 13 wherein the at least two magnetic layers include a first magnetic layer having a weak in-plane anisotropy and a second magnetic layer having a high perpendicular anisotropy.
15. The memory of claim 14 wherein the weak in-plane anisotropy includes a demagnetization field minus a perpendicular anisotropy, the perpendicular anisotropy being less than the demagnetization field.
16. The memory of claim 15 wherein the perpendicular anisotropy is at least 0.4 multiplied by the demagnetization field and not more than 0.9 multiplied by the demagnetization field.
17. The memory of claim 13 wherein the second ferromagnetic layer includes a demagnetization energy and a perpendicular anisotropy energy corresponding to the high perpendicular anisotropy, the perpendicular anisotropy energy exceeding the demagnetization energy.
18. The memory of claim 14 wherein the magnetic substructure has a desired exchange coupling, the insertion layer has a thickness tailored to provide the desired exchange coupling.
19. The memory of claim 13 wherein the at least two magnetic layers includes a third magnetic layer wherein the at least one insertion layer includes a second insertion layer adjoining the third magnetic layer.
20. The memory of claim 13 wherein the free layer includes the magnetic substructure.
21. The memory of claim 13 wherein the pinned layer includes the magnetic substructure.
22. The memory of claim 13 wherein both the pinned layer and the free layer include the magnetic substructure.
23. The memory of claim 14 further comprising:
an additional nonmagnetic layer; and
an additional pinned layer, the nonmagnetic layer residing between the free layer and the additional pinned layer.
24. The memory of claim 14 wherein the additional pinned layer includes an additional magnetic substructure having at least two additional magnetic layers interleaved with at least one additional insertion layer, the at least two additional magnetic layers being exchange coupled.
25. A method for providing a magnetic junction for use in a magnetic device comprising:
providing a pinned layer;
providing a nonmagnetic spacer layer; and
providing a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
wherein at least one of the step of providing the pinned layer and the step of providing free layer includes providing a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, the at least two magnetic layers being exchange coupled.
26. The magnetic junction of claim 1 wherein each of the at least one insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
27. The magnetic junction of claim 1 wherein each of the at least one insertion layer consists of one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
28. The magnetic junction of claim 1 wherein each of the at least two magnetic layers has a demagnetization field and a perpendicular anisotropy, the perpendicular anisotropy being less than the demagnetization field.
29. The magnetic junction of claim 1 wherein each of the at least two magnetic layers has a demagnetization field and a perpendicular anisotropy, the perpendicular anisotropy being greater than the demagnetization field.
30. The magnetic junction of claim 12 wherein each of the at least one additional insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
31. The memory of claim 13 wherein each of the at least one insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
32. The memory of claim 13 wherein each of the at least one insertion layer consists of one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
33. The memory of claim 13 wherein each of the at least two magnetic layers has a demagnetization field and a perpendicular anisotropy, the perpendicular anisotropy being less than the demagnetization field.
34. The memory of claim 13 wherein each of the at least two magnetic layers has a demagnetization field and a perpendicular anisotropy, the perpendicular anisotropy being greater than the demagnetization field.
35. The memory of claim 24 wherein each of the at least one additional insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
36. The method of claim 25 wherein each of the at least one insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
37. The method of claim 25 wherein each of the at least one insertion layer consists of one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO.
38. A magnetic junction for use in a magnetic device comprising:
a pinned layer;
a nonmagnetic spacer layer; and
a free layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer;
wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction; and
wherein at least one of the pinned layer and the free layer includes a magnetic substructure, the magnetic substructure including at least two magnetic layers interleaved with at least one insertion layer, the at least two magnetic layers being exchange coupled, the at least two magnetic layers including a first magnetic layer having a weak in-plane anisotropy and a second magnetic layer having a high perpendicular anisotropy, the weak in-plane anisotropy includes a first demagnetization field minus a first perpendicular anisotropy, the first perpendicular anisotropy being less than the first demagnetization field, the second ferromagnetic layer including a second demagnetization energy and a second perpendicular anisotropy energy corresponding to the high perpendicular anisotropy, the second perpendicular anisotropy energy exceeding the second demagnetization energy.
39. The magnetic junction of claim 38 wherein the first perpendicular anisotropy is at least 0.4 multiplied by the first demagnetization field.
40. The magnetic junction of claim 38 wherein the first perpendicular anisotropy is not more than 0.9 multiplied by the first demagnetization field.