1461129984-9c74eee4-a229-4b7f-ba6f-654dea362bca

1. A light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer;
a first electrode on an upper side of the light emitting structure;
a second electrode on an underside of the light emitting structure;
at least one cavity penetrating the second conductive type semiconductor layer and the active layer; and
an insulating layer disposed on the at least one cavity,
wherein the second electrode comprises:
a conductive layer; and
a reflective layer disposed between the insulating layer and the conductive layer,
wherein the insulating layer and the reflective layer fully fill the cavity, and wherein the reflective layer comprises at least one protrusion in the cavity,

wherein the at least one protrusion comprises an upper portion and a lower portion having different sizes,
wherein the first electrode is vertically aligned with the at least one protrusion,
wherein a top surface of the reflective layer is higher than a top surface of the active layer in a portion vertically overlapping the first electrode, and
wherein the top surface of the reflective layer comprises a flat top surface.
2. The light emitting device of claim 1, wherein the at least one protrusion has a width which increases as it goes from the upper portion to the lower portion thereof.
3. The light emitting device of claim 1, wherein the reflective layer is disposed between the second conductive type semiconductor layer and the conductive layer.
4. The light emitting device of claim 1, wherein the insulating, layer on the at least one protrusion of the second electrode contacts the first conductive type semiconductor layer.
5. The light emitting device of claim 1, wherein the insulating layer comprises a transparent insulating layer.
6. The light emitting device of claim 1, wherein the insulating layer is disposed on a top surface and a side surface of the at least one protrusion.
7. The light emitting device of claim 6, wherein an angle between a top surface of the conductive layer and a surface of the insulating layer which is disposed on the side surface of the at least one protrusion is equal to an angle between a top surface of the active layer and the surface of the insulating layer which is disposed on the side surface of the at least one protrusion.
8. A light emitting device package comprising:
a package body;
a light emitting device of claim 1 over the package body; and
a third electrode layer formed in the package body and electrically connected to the light emitting device.
9. The light emitting device of claim 1, wherein light generated from the active layer is extracted through at least one area of an upper side of the light emitting structure.
10. The light emitting device of claim 1, wherein the reflective layer comprises a bottom portion between the conductive layer and the second conductive type semiconductor layer.
11. The light emitting device of claim 1, wherein the upper portion of the at least one protrusion comprises a flat top surface, and
a width of the at least one protrusion increases as it goes from the upper portion to the lower portion.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for processing signals in an RF subsystem to eliminate the need for a low noise amplifier therein, the method comprising:
providing a plurality of intercoupled micromechanical devices including an input port for receiving signals and an output port; and
vibrating the micromechanical devices to initially pass a desired frequency range of unamplified signals while substantially attenuating signals outside the desired frequency range and then to convert between first and second frequencies and filter the desired frequency range of unamplified signals without the need for the low noise amplifier.
2. The method as claimed in claim 1 wherein the low noise amplifier is an RF low noise amplifier.
3. An RF receiver subsystem which eliminates the need for a low noise amplifier therein, the subsystem comprising:
an image-reject vibrating micromechanical filter including an input port for receiving signals, the filter passing a desired frequency range of the signals while substantially attenuating signals outside the desired frequency range; and
a vibrating micromechanical mixer-filter coupled to the filter having an output port, the mixer-filter being adapted to be coupled to electronics for converting and filtering the desired frequency range of signals without the need for the low noise amplifier.
4. The subsystem as claimed in claim 3 wherein the low noise amplifiers an RF low noise amplifier.
5. The subsystem as claimed in claim 3 wherein the filter is a relatively wide band filter and the mixer-filter is a narrow band mixer-filter.
6. An RF receiver subsystem which eliminates the need for a low noise amplifier, the subsystem comprising:
a vibrating micromechanical frequency range selector having an input port for receiving signals, the selector passing a desired frequency range of the signals while substantially attenuating signals outside the desired frequency range; and
a vibrating micromechanical mixer-filter coupled to the selector having an output port and being adapted to be connected to electronics for converting and filtering the desired frequency range of signals without the need for the low noise amplifier.
7. The subsystem as claimed in claim 6 wherein the low noise amplifier is an RF low noise amplifier.
8. An RF transceiver subsystem which substantially reduces the need for RF front-end power, the subsystem comprising:
a vibrating micromechanical frequency range selector having any input port for receiving signals, the selector passing a desired frequency range of the signals while substantially attenuating signals outside the desired frequency range; and
a vibrating micromechanical mixer-filter coupled to the selector having an output port, the mixer-filter being adapted to be connected to electronics for converting and filtering signals wherein the reed for RF front-end power is substantially reduced.
9. The method as claimed in claim 1 wherein the first frequency is in an RF range and the second frequency is in an IF range.
10. The subsystem as claimed in claim 3 wherein the vibrating micromechanical mixer-filter converts from an RF range to an IF range.
11. The subsystem as claimed in claim 3 wherein the image-reject vibrating micromechanical filter passes unamplified signals within the desired frequency range to the vibrating micromechanical mixer-filter.
12. The subsystem as claimed in claim 6 wherein the vibrating micromechanical mixer-filter converts from an RF range to an IF range.
13. The subsystem as claimed in claim 6 wherein the vibrating micromechanical frequency range selector passes unamplified signals within the desired frequency range to the vibrating micromechanical mixer-filter.
14. The subsystem as claimed in claim 8 wherein the vibrating micromechanical mixer-filter converts between an RF range and an IF range.
15. The subsystem as claimed in claim 8 wherein the vibrating micromechanical frequency range selector passes unamplified signals within the desired frequency range to the vibrating micromechanical mixer-filter.

1461129973-4eedcdcc-820a-4888-a4f7-41256318a7a7

1. A torque sensor, comprising:
a first rotating body rotatable around an input shaft;
a second rotating body rotatable around an output shaft;
a strain body, which includes a first engaging portion being separated from at least one of the first rotating body and the second rotating body in a first direction parallel to the input shaft, a second direction perpendicular to the first direction, and a third direction around the input shaft and being capable of engaging to the at least one of the first rotating body and the second rotating body in the third direction, and which transmits a rotational torque to the third direction between the first rotating body and the second rotating body; and
a detection element provided to the strain body to measure a strain of the strain body due to the rotational torque.
2. The torque sensor according to claim 1, wherein
the first rotating body and the second rotating body are a pair of concentric annular bodies, the pair of concentric annular bodies being arranged to be opposed to each other in the second direction and having diameters different from each other, and
the strain body includes a plurality of shaft portions radially extending in the second direction between the first rotating body and the second rotating body.
3. The torque sensor according to claim 2, wherein
the first engaging portion is formed to an end of one of the plurality of shaft portions,
the at least one of the first rotating body and the second rotating body includes a second engaging portion capable of engaging to the first engaging portion in the third direction, and
the second engaging portion includes
a first surface opposed to the first engaging portion with a first gap being formed therebetween in the second direction, and
a second surface opposed to the first engaging portion with a second gap being formed therebetween in the third direction.
4. The torque sensor according to claim 1, wherein
the first rotating body and the second rotating body are a pair of annular bodies, the pair of annular bodies being arranged to be opposed to each other in the first direction, and
the strain body includes a cylindrical portion extending in the first direction between the first rotating body and the second rotating body.
5. The torque sensor according to claim 4, wherein
the first engaging portion is formed to an end of the cylindrical portion,
the at least one of the first rotating body and the second rotating body includes a second engaging portion capable of engaging to the first engaging portion in the third direction, and
the second engaging portion includes
a first surface opposed to the first engaging portion with a first gap being formed therebetween in the first direction, and
a second surface opposed to the first engaging portion with a second gap being formed therebetween in the third direction.
6. The torque sensor according to claim 3, wherein the second gap is smaller than the first gap.
7. The torque sensor according to claim 3, further comprising a deformable filler layer filled between the first engaging portion and the second engaging portion.
8. A robot apparatus, comprising:
a rotary drive source;
a first rotating body, which includes an input shaft and is rotatable around the input shaft when received a rotational torque from the rotary drive source;
a second rotating body, which includes an output shaft and is rotatable around an output shaft;
a strain body, which includes a first engaging portion being separated from at least one of the first rotating body and the second rotating body in a first direction parallel to the input shaft, a second direction perpendicular to the first direction, and a third direction around the input shaft and being capable of engaging to the at least one of the first rotating body and the second rotating body in the third direction, and which transmits a rotational torque to the third direction between the first rotating body and the second rotating body; and
a detection element provided to the strain body to measure a strain of the strain body due to a rotational torque.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A process of producing a machined component from a solid body, the process comprising the steps of:
continuously producing a chip having a microstructure by engaging a solid body with a cutting edge of a cutting member while the solid body and the cutting edge move relative to each other; and
simultaneously extruding the chip in the immediate vicinity of the cutting edge and as the chip is separated from the solid body by the cutting edge to continuously plastically deform the chip and produce an extruded chip immediately downstream of the cutting, the extruding step being performed at least in part by a constraining member that defines an opening with the cutting edge through which the chip passes and is plastically deformed to produce the extruded chip;
wherein the spacing between an edge of the cutting member and an edge of the constraining member is such that the chip thickness is less than or equal to minimum thickness of a chip produced without using the constraining member; and wherein the chip has a cross-sectional shape having two orthogonal dimensions comprising a thickness dimension determined by the cutting member and the constraining member and a width dimension orthogonal to the thickness dimension, the chip having a microstructure without substantial flow localization,
resulting in the solid body becoming a machined component exhibiting surface with substantially lower heterogeneity in deformation and higher surface smoothness relative to surfaces of machined components produced by conventional machining.
2. The process according to 1, wherein the chip is continuously produced to have a nanostructured microstructure and the extruded chip is nanostructured.
3. The process according to claim 1, wherein the constraining member comprises a die through which the chip is forced as a result of being continuously produced.
4. The process according to 1, wherein the cutting edge is stationary and the solid body moves relative to the cutting edge during the continuous producing step.
5. The process according to 1, wherein the solid body rotates during the continuous producing and extruding steps.
6. The process according to 1, wherein the solid body is stationary and the cutting edge moves relative to the solid body during the continuous producing step.
7. The process according to 1, wherein the continuous producing and extruding steps are performed by a linear machining operation.
8. The process according to 1, wherein the extruding step induces a change in each of the two orthogonal dimensions.
9. The process according to 1, wherein the extruded chip has a round cross-sectional shape.
10. The process according to 1, wherein the extruded chip has a rectilinear cross-sectional shape.
11. The process according to 1, further comprising performing on the extruded chip at least one treatment chosen from the group consisting of thermal treatments, mechanical treatments, and thermo-mechanical treatments.
12. The process according to 1, further comprising the steps of plastically deforming the extruded chip to form a product.
13. The process according to 1, further comprising removing material from the extruded chip to form a product.
14. The process according to 1, further comprising at least one additive material process performed on the extruded chip to form a product.
15. The process according to 1, further comprising the step of placing the extruded chip in a matrix material to form a product in which the extruded chip is a reinforcement material for the matrix material.
16. The process according to 1, wherein the solid body is formed of a material chosen from the group consisting of metallic, intermetallic, composites, and ceramic materials, such that the extruded chip is entirely formed of the material.
17. A process of producing a machined component from a solid body, the process comprising the steps of:
continuously producing a chip having a microstructure by engaging a solid body with a cutting edge of a cutting member while the solid body and the cutting edge move relative to each other; and
simultaneously extruding the chip in the immediate vicinity of the cutting edge and as the chip is separated from the solid body by the cutting edge to continuously plastically deform the chip and produce an extruded chip immediately downstream of the cutting, the extruding step being performed at least in part by a constraining member that defines an opening with the cutting edge through which the chip passes and is plastically deformed to produce the extruded chip;
wherein the spacing between an edge of the cutting member and an edge of the constraining member is such that the chip thickness is less than or equal to average thickness of a chip produced without using the constraining member; and wherein the chip has a cross-sectional shape having two orthogonal dimensions comprising a thickness dimension determined by the cutting member and the constraining member and a width dimension orthogonal to the thickness dimension, the chip having a microstructure without substantial flow localization,
resulting in the solid body becoming a machined component exhibiting surface with substantially lower heterogeneity in deformation and higher surface smoothness relative to surfaces of machined components produced by conventional machining.
18. A method of avoiding substantial flow localization in a chip during a machining operation using a constraining member, the method comprising the steps of:
conducting a machining operation without a constraining member to produce a chip from a solid body by a relative motion between a cutting tool and the solid body;
examining the chip produced to detect a substantial serrated flow pattern on the chip produced;
determining an average thickness of the chip produced;
and adjusting the spacing between an edge of the cutting tool and an edge of the constraining member in a machining operation utilizing the constraining member such that final thickness of a chip produced in a machining utilizing the constraining member is less than or equal to either the minimum thickness of the chip produced without using the constraining member or the average thickness of the chip produced without using the constraining member.
19. A machined component produced by the process of claim 1.
20. A machined component produced by the process of claim 17.
21. A chip produced by the process of claim 18.
22. The process according to claim 1, further comprising performing on the machined component at least one treatment chosen from the group consisting of thermal treatments, mechanical treatments, and thermo-mechanical treatments.
23. The process according to claim 17, further comprising performing on the machined component at least one treatment chosen from the group consisting of thermal treatments, mechanical treatments, and thermo-mechanical treatments.
24. The process according to claim 18, further comprising performing on the chip at least one treatment chosen from the group consisting of thermal treatments, mechanical treatments, and thermo-mechanical treatments.