Author: claimsbot

1. A method for cleaning contaminants from a substrate, comprising:
applying a cleaning material to a surface of a substrate, wherein the cleaning material is a polar solvent having polyacrylamide dissolved therein for entrapping contaminants present on the surface of the substrate; and
applying a rinsing fluid to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate, wherein the controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid.
2. A method as recited in claim 1, wherein the rinsing fluid velocity is controlled at about 1 meter per second.
3. A method as recited in claim 1, wherein the rinsing fluid velocity is controlled within range extending from about 0.1 meter per second to about 100 meters per second.
4. A method as recited in claim 1, wherein rinsing fluid is defined as deionized water.
5. A method as recited in claim 1, wherein rinsing fluid is defined as one or more of deionized water, isopropyl alcohol, dimethyl sulfoxide, dimethyl formamide, dimethyl acetate, nitrogen gas, a polar solvent, and an atomized polar solvent.
6. A method as recited in claim 1, further comprising:
rotating the substrate during application of the rinsing fluid to the surface of the substrate.
7. A method as recited in claim 6, wherein the substrate is rotated at a rate within a range extending from about 100 revolutions per minute to about 10000 revolutions per minute.
8. A method as recited in claim 1, wherein the rinsing fluid is dispensed from a nozzle positioned above the substrate.
9. A method as recited in claim 8, further comprising:
translating the nozzle over the substrate while dispensing the rinsing fluid from the nozzle.
10. A method as recited in claim 1, wherein the rinsing fluid is applied to the surface of the substrate immediately following application of the cleaning material to the surface of the substrate.
11. A system for cleaning contaminants from a substrate, comprising:
a support structure defined to support a substrate;
a cleaning material reservoir having disposed therein a cleaning material that includes one or more polymeric materials for entrapping contaminants present on a surface of the substrate;
a cleaning material dispensing device connected in fluid communication with the cleaning material reservoir and defined to dispense the cleaning material over the support structure such that the cleaning material is applied onto the substrate when present on the support structure; and
a proximity head disposed above the support structure such that a bottom surface of the proximity head faces a top surface of the substrate when present on the support structure, wherein the proximity head is defined to dispense a rinsing fluid from the bottom surface of the proximity head and apply a vacuum suction at the bottom surface of the proximity head so as to form a fluid meniscus between the bottom surface of the proximity head and the top surface of the substrate when present on the support structure beneath the proximity head, wherein the proximity head is defined to control a flow velocity of the rinsing fluid within a velocity range which causes the cleaning material to behave in an elastic manner when impacted by the rinsing fluid.
12. A system as recited in claim 11, wherein the support structure is defined to transport the substrate beneath the proximity head as the rinsing fluid and vacuum suction is applied at the bottom surface of the proximity head.
13. A system as recited in claim 11, further comprising:
a rinsing fluid supply in fluid communication with the proximity head, the rinsing fluid supply defined to provide a flow of rinsing fluid to the proximity head such that the rinsing fluid is expelled from the bottom surface of the proximity head at a flow rate within a range extending from about 1 liter per minute to about 4 liters per minute.
14. A system as recited in claim 11, wherein the cleaning material is a polar solvent having polyacrylamide dissolved therein, and wherein the rinsing fluid is deionized water.
15. A system as recited in claim 11, wherein the proximity head includes one or more rinsing fluid dispense ports centrally located on the bottom surface of the proximity head through which the rinsing fluid is flowed toward the substrate when present on the support structure.
16. A system as recited in claim 15, wherein the one or more rinsing fluid dispense ports are defined as multiple holes centrally located along a length of the bottom surface of the proximity head.
17. A system as recited in claim 15, wherein the one or more rinsing fluid dispense ports is defined as a continuous channel centrally located along a length of the bottom surface of the proximity head.
18. A system as recited in claim 15, wherein the proximity head includes a number of vacuum ports located on the bottom surface of the proximity head and positioned around the one or more rinsing fluid dispense ports about a periphery of the bottom surface of the proximity head, and wherein the vacuum ports are connected to apply vacuum to transport the rinsing fluid, the cleaning material, and contaminants from the fluid meniscus through the vacuum ports.
19. A system as recited in claim 18, wherein the number of vacuum ports are defined as multiple holes disposed around the one or more rinsing fluid dispense ports and about the periphery of the bottom surface of the proximity head.
20. A system as recited in claim 18, wherein the number of vacuum ports is defined as a continuous annular channel disposed around the one or more rinsing fluid dispense ports and about the periphery of the bottom surface of the proximity head.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for manufacturing a substrate with a metal film, comprising:
preparing an insulative substrate having a first surface and a second surface on an opposite side of the first surface;
forming in the insulative substrate a penetrating hole having an inner wall tapering from the first surface of the insulative substrate toward the second surface;
forming a layer of a composition comprising a polymerization initiator and a polymerizable compound on the inner wall of the penetrating hole;
irradiating the layer of the composition with energy such that a polymer is formed on the inner wall of the penetrating hole;
applying a plating catalyst on the polymer; and
forming a plated-metal film on the inner wall of the penetrating hole.
2. The method for manufacturing a substrate with a metal film according to claim 1, further comprising conducting a plasma treatment on the inner wall of the penetrating hole.
3. The method for manufacturing a substrate with a metal film according to claim 1, wherein the irradiating of the layer of the composition comprises irradiating the layer of the composition with energy such that a polymer having a functional group to be bonded with the catalyst is formed on the inner wall of the penetrating hole.
4. The method for manufacturing a substrate with a metal film according to claim 1, wherein the irradiating comprises irradiating UV rays upon the layer of the composition.
5. The method for manufacturing a substrate with a metal film according to claim 1, further comprising:
smoothing the first surface and second surface of the insulative substrate; and
forming the plated-metal film on the first surface of the insulative substrate and on the second surface of the insulative substrate.
6. A method for manufacturing a substrate with a metal film, comprising:
preparing an insulative substrate having a first surface and a second surface on an opposite side of the first surface;
forming in the insulative substrate a first opening having an inner wall tapering from the first surface of the insulative substrate toward the second surface;
forming in the insulative substrate a second opening having an inner wall tapering from the second surface of the insulative substrate toward the first surface such that a penetrating hole comprising the first opening and the second opening is formed in the insulative substrate;
forming on the inner walls of the penetrating hole a layer of a composition comprising a polymerization initiator and a polymerizable compound;
irradiating the layer of the composition with energy such that a polymer is formed on the inner walls of the penetrating hole;
applying a plating catalyst on the polymer; and
forming a plated-metal film on the inner walls of the penetrating hole.
7. The method for manufacturing a substrate with a metal film according to claim 6, further comprising conducting a plasma treatment on the inner walls of the penetrating hole.
8. The method for manufacturing a substrate with a metal film according to claim 6, wherein the irradiating of the layer of the composition comprises irradiating the layer of the composition with energy from the first surface of the substrate and irradiating the layer of the composition with energy from the second surface of the substrate.
9. The method for manufacturing a substrate with a metal film according to claim 6, wherein the irradiating of the layer of the composition comprises irradiating the layer of the composition with energy such that a polymer having a functional group to be bonded with the catalyst is formed on the inner wall of the penetrating hole.
10. The method for manufacturing a substrate with a metal film according to claim 6, wherein the irradiating comprises irradiating UV rays upon the layer of the composition.
11. The method for manufacturing a substrate with a metal film according to claim 6, further comprising:
smoothing the first surface and second surface of the insulative substrate; and
forming the plated-metal film on the first surface of the insulative substrate and on the second surface of the insulative substrate.
12. A method for manufacturing a substrate with a metal film, comprising:
preparing an insulative substrate having a first surface and a second surface on an opposite side of the first surface;
forming in the insulative substrate a penetrating hole having an inner wall tapering from the first surface of the insulative substrate toward the second surface;
treating the first surface of the insulative substrate, the second surface of the insulative substrate and the inner wall of the penetrating hole with a surface modification treatment;
forming a layer of a composition comprising a polymerizable compound on the first surface of the insulative substrate, the second surface of the insulative substrate and the inner wall of the penetrating hole such that a polymer is formed on the first surface of the insulative substrate, the second surface of the insulative substrate and the inner wall of the penetrating hole;
applying a plating catalyst on the polymer; and
forming a plated-metal film on the inner wall of the penetrating hole.
13. The method for manufacturing a substrate with a metal film according to claim 12, wherein the treating comprises subjecting the first surface of the insulative substrate, the second surface of the insulative substrate and the inner wall of the penetrating hole to one of a plasma treatment and a corona treatment.
14. A method for manufacturing a substrate with a metal film, comprising:
preparing an insulative substrate having a first surface and a second surface on an opposite side of the first surface;
forming in the insulative substrate a first opening having an inner wall tapering from the first surface of the insulative substrate toward the second surface;
forming in the insulative substrate a second opening having an inner wall tapering from the second surface of the insulative substrate toward the first surface such that a penetrating hole comprising the first opening and the second opening is formed in the insulative substrate;
treating the first surface of the insulative substrate, the second surface of the insulative substrate and the inner walls of the penetrating hole with a surface modification treatment;
forming a layer of a composition comprising a polymerizable compound on the first surface of the insulative substrate, the second surface of the insulative substrate and the inner walls of the penetrating hole such that a polymer is formed on the first surface of the insulative substrate, the second surface of the insulative substrate and the inner walls of the penetrating hole;
applying a plating catalyst on the polymer; and
forming a plated-metal film on the inner wall of the penetrating hole.
15. The method for manufacturing a substrate with a metal film according to claim 14, wherein the treating comprises subjecting the first surface of the insulative substrate, the second surface of the insulative substrate and the inner walls of the penetrating hole to one of a plasma treatment and a corona treatment.
16. A substrate with a metal film, comprising:
an insulative substrate having a first surface and a second surface on an opposite side of the first surface, the insulative substrate having a penetrating hole having an inner wall tapering from the first surface toward the second surface;
a polymer formed on the inner wall of the penetrating hole and having a functional group bondable with a catalyst for depositing a plated-metal film; and
a plated-metal film formed on the inner wall of the penetrating hole.
17. The substrate with a metal film according to claim 16, wherein the plated-metal film is formed on a layer of the polymer.
18. The substrate with a metal film according to claim 16, wherein the first surface and second surface of the insulative substrate are formed smooth, and the plated-metal film is formed on the first surface of the insulative substrate and on the second surface of the insulative substrate.
19. A substrate with a metal film, comprising:
an insulative substrate having a first surface and a second surface on an opposite side of the first surface, the insulative substrate having a penetrating hole comprising a first opening having an inner wall tapering from the first surface toward the second surface and a second opening having an inner wall tapering from the second surface toward the first surface;
a polymer formed on the inner walls of the penetrating hole and having a functional group bondable with a catalyst for depositing a plated-metal film; and
a plated-metal film formed on the inner walls of the penetrating hole.
20. The substrate with a metal film according to claim 19, wherein the plated-metal film is formed on a layer of the polymer.
21. The substrate with a metal film according to claim 19, wherein the first surface and second surface of the insulative substrate are formed smooth, and the plated-metal film is formed on the first surface of the insulative substrate and on the second surface of the insulative substrate.

What is claimed is:

1. A method for manufacturing a capacitor of a semiconductor device having a dielectric film of an ONO structure, the method comprising the steps of:
forming an interlayer insulating film on a semiconductor substrate;
forming a storage electrode comprising a doped polysilicon on the interlayer insulating film;
forming a first oxide film on the storage electrode;
subjecting the first oxide film to a thermal treatment in an atmosphere comprising an n-type impurity to implant the impurity into the first oxide film;
forming a nitride film on the first oxide film, whereby the impurity in the first oxide film is diffused into the nitride film;
forming a second oxide film on the nitride film; and
forming a plate electrode on the second oxide film.
2. The method according to claim 1, wherein the doped polysilicon is doped with an n-type impurity having a concentration of 1E20 to 5E21cm3.
3. The method according to claim 1, wherein the step of forming the storage electrode further comprises removing a natural oxide film on the storage electrode.
4. The method according to claim 1, wherein the first oxide layer has a thickness ranging from 5 to 25 .
5. The method according to claim 1, wherein the step of forming the first oxide film comprises a wet oxidation process wherein the semiconductor substrate is dipped in a solution comprising NH4OH and H2O2 having a temperature ranging from room temperature to 80 C. for 1 to 10 minutes.
6. The method according to claim 1, wherein the step of forming the first oxide film comprises a dry oxidation process wherein the semiconductor substrate is subjected to a thermal treatment in an atmosphere containing oxygen selected from the group of O2, H2O, N2O, NO, O3 and combinations thereof at a temperature ranging from 500 to 800 C. under a pressure ranging from 0.05 to 760 Torr for 3 to 120 minutes.
7. The method according to claim 1, wherein the gas containing an n-type impurity is selected from the group consisting of PH3, AsH3 and combinations thereof, and the thermal treatment is performed at a temperature ranging from 500 to 800 C. under a pressure ranging from 0.05 to 760 Torr for 3 to 180 minutes.
8. The method according to claim 7, wherein the gas containing an n-type impurity further comprises an inert gas.
9. The method according to claim 1, wherein the nitride film has a thickness ranging from 30 to 60 .
10. The method according to claim 1, wherein the step of forming the nitride film is a process selected from the group of: (a) a CVD method performed in a mixed gas atmosphere comprising SiH4 and NH3 or a mixed gas atmosphere comprising SiH2Cl2 and NH3 at a temperature ranging from 600 to 800 C. under a pressure ranging from 0.05 to 2 Torr; (b) nitriding the first oxide film in a gas atmosphere of NH3, a mixed gas atmosphere of NH3 and Ar or a mixed gas atmosphere of NH3 and N2 at a temperature ranging from 600 to 800 C. under a pressure ranging from 0.05 to 760 Torr; and (c) combinations thereof.
11. The method according to claim 1, wherein the step of forming the second oxide film comprises a thermal process performed in an atmosphere containing oxygen at a temperature ranging from 650 to 800 C. under a pressure ranging from 0.05 to 760 Torr for 3 to 120 minutes.
12. A method for removing a charge depletion region caused by an impurity within a capacitor of a semiconductor device introduced during formation of an oxide film during fabrication of the semiconductor device, wherein the formation of the oxide film includes a thermal treatment at a first temperature, comprising:
thermally treating the semiconductor device while forming a nitride layer at a second temperature that is greater than the first temperature.
13. The method according to claim 12, wherein the second temperature ranges from 500 to 800 C.
14. The method according to claim 12, wherein the nitride layer is formed via chemical vapor deposition.
15. The method according to claim 12, wherein the nitride layer is formed by nitriding the oxide film in a gas atmosphere comprising NH3.
16. The method according to claim 12, wherein the nitride layer is formed by a combination of chemical vapor deposition and nitriding the oxide film in a gas atmosphere comprising NH3.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of industrial extraction of saccharides from a lignocellulose material in a plant, comprising:
performing hydrolysis on the lignocellulose material by contacting the lignocellulose material with an acidic water solution using an apparatus for large scale industrial extraction, which is part of the plant, where the acidic water solution is a sulfur dioxide solution or a sulfuric acid solution,
wherein the at least one part of the apparatus includes stainless steel or duplex stainless steel, and
wherein the acidic water solution has a pH of 1.5 to 2.3 and a temperature of 175\xb0 C. to 240\xb0 C.
2. The method of claim 1, wherein the stainless steel is austenitic stainless steel.
3. The method of claim 1, wherein the at least one part includes at least one selected from the group consisting of reaction vessels, material conveyors, pipes, plug screws, pipe conduits and dewatering apparatuses.
4. The method of claim 1, wherein the acidic water solution has a temperature of 175\xb0 C. to 210\xb0 C.
5. A method of industrial hydrolysis of the lignocellulose material, comprising:
performing prehydrolysis on the lignocellulose material according to claim 1 using an acid; and
performing enzymatic cellulose hydrolysis on the prehydrolyzed lignocellulose material.
6. A method of industrial production of ethanol, comprising:
performing the method according to claim 1, wherein the ethanol is produced from the lignocellulose material.