Author: claimsbot

1.-4. (canceled)
5. An exhaust-gas recirculation valve configured for forwarding a gas in a cooled or uncooled state, the exhaust-gas recirculation valve comprising:
a tubular center part having an outer shell;
a gas inlet arranged on the outer shell of the tubular center part;
a gas outlet arranged on the outer shell of the tubular center part adjacent to the gas inlet;
a first branch arranged on the outer shell of the tubular center part opposite the gas outlet;
a second branch arranged on the outer shell of the tubular center part opposite the gas inlet;
a radiator connecting the first branch and the second branch; and
a rotary slide rotatably mounted centrally in the tubular center part such that it sealingly contacts an inner surface of the tubular center part at two points on opposite sides of the longitudinal axis and rotatable about a longitudinal axis of the tubular center part,
wherein the rotary slide is rotatable to create a plurality of operating states comprising:
closing the gas inlet;
passing the exhaust-gas stream in a continuous quantity-regulated manner from the inlet to the outlet; and
passing the exhaust-gas stream in a continuous quantity-regulated manner from the gas inlet to the gas outlet via the first branch, the radiator, and the second branch.
6. The exhaust-gas recirculation valve according to claim 5, wherein
the gas inlet and the gas outlet are arranged perpendicular to each other,
the first branch and the second branch are arranged perpendicular to each other, and respective longitudinal axes of the gas inlet, the gas outlet, the first branch, and the second branch having a common point of intersection.
7. The exhaust-gas recirculation valve according to claim 5 wherein the radiator is a water radiator.
8. The exhaust-gas recirculation valve according to claim 5 wherein the exhaust-gas recirculation valve is configured to recirculate exhaust gas in a motor vehicle.
9. The exhaust-gas recirculation valve according to claim 6, wherein the common point of intersection corresponds to the longitudinal axis of the tubular center part.
10. The exhaust-gas recirculation valve according to claim 6 wherein the radiator is a water radiator.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for preparing zeolite SSZ-52, comprising:
(a) preparing a reaction mixture containing:
(1) at least one source of silicon;
(2) one or more sources of one or more oxides selected from the group consisting of oxides of trivalent elements, pentavalent elements, and mixtures thereof;
(3) at least one source of an element selected from Groups 1 and 2 of the Periodic Table;
(4) at least one organic structure directing agent represented by the following structure:
wherein R1, R2, R3 and R4 are independently selected from the group consisting of alkyl groups having from 1 to 3 carbon atoms and n has a value of 0, 1 or 2;
(5) optionally, an auxiliary structure directing agent comprising an N-cyclohexylmethyl-N-ethylpiperidinium cation;
(6) hydroxide ions; and
(7) water; and

(b) subjecting the reaction mixture to crystallization conditions sufficient to form crystals of the zeolite.
2. The method of claim 1, wherein the organic structure directing agent is selected from the group consisting of an N-ethyl-N-(2,4,4-trimethylcyclopentyl)pyrrolidinium cation, an N-ethyl-N-(3,3,5-trimethylcyclohexyl)pyrrolidinium cation, and mixtures thereof.
3. The method of claim 1, wherein the zeolite is prepared from a reaction mixture comprising, in terms of mole ratios, the following:
SiO2X2Ob
15 to 60
OHSiO2
0.30 to 1.0\u2002
(Q + A)SiO2
0.10 to 0.40
MSiO2
0.10 to 0.50
H2OSiO2
15 to 50
wherein:
(1) X is selected from the group consisting of trivalent and pentavalent elements from Groups 3-13 of the Periodic Table, and mixtures thereof
(2) stoichiometric variable b equals the valence state of compositional variable X;
(3) Q is the at least one organic structure directing agent, and Q>0;
(4) A is an auxiliary structure directing agent comprising an N-cyclohexylmethyl-N-ethylpiperidinium cation, and A\u22670; and
(5) M is selected from the group consisting of elements from Groups 1 and 2 of the Periodic Table.
4. The method of claim 3, wherein Q is selected from the group consisting of an N-ethyl-N-(2,4,4-trimethylcyclopentyl)pyrrolidinium cation, an N-ethyl-N-(3,3,5-trimethylcyclohexyl)pyrrolidinium cation, and mixtures thereof.
5. The method of claim 3, wherein X is selected from the group consisting of B, Al, Ga, In, and mixtures thereof.
6. The method of claim 3, wherein X is Al.
7. A crystalline SSZ-52 zeolite having a composition, as-synthesized and in its anhydrous state, comprising, in terms of mole ratios, the following:
SiO2X2Ob
\u20026 to 50
(Q + A)SiO2
0.02 to 0.08
MSiO2
0.02 to 0.20
wherein:
(1) X is selected from the group consisting of trivalent and pentavalent elements from Groups 3-13 of the Periodic Table, and mixtures thereof;
(2) stoichiometric variable b equals the valence state of compositional variable X;
(3) Q is at least one organic structure directing agent represented by the following structure:
wherein (i) R1, R2, R3 and R4 are independently selected from the group consisting of alkyl groups having from 1 to 3 carbon atoms; (ii) n has a value of 0, 1 or 2; and (iii) Q>0;
(4) A is an auxiliary structure directing agent comprising an N-cyclohexylmethyl-N-ethylpiperidinium cation, and A\u22670; and
(5) M is selected from the group consisting of elements from Groups 1 and 2 of the Periodic Table.
8. The zeolite of claim 7, wherein Q is selected from the group consisting of an N-ethyl-N-(2,4,4-trimethylcyclopentyl)pyrrolidinium cation, an N-ethyl-N-(3,3,5-trimethylcyclohexyl)pyrrolidinium cation, and mixtures thereof.
9. The zeolite of claim 7, wherein X is selected from the group consisting of B, Al, Ga, In, and mixtures thereof.
10. The zeolite of claim 7, wherein X is Al.

1. A method of manufacturing a semiconductor structure, comprising:
forming a dielectric layer with a via opening;
forming a wire comprising:
forming a barrier layer on and over the dielectric layer;
depositing an electroplated material on and over the barrier layer;
forming a cap layer on and over the electroplated material; and
forming spacers on sidewalls of the electroplated material; and

forming a dielectric film over and around the wire and directly contacting a top surface of the cap layer, the spacers, and a top surface of the dielectric layer with the via opening,
wherein:
the barrier layer comprises a first conductive material;
the cap layer comprises a second conductive material different than the first conductive material; and
the spacers comprise an insulator material.
2. The method of claim 1, further comprising:
forming a second wire; and
forming an air gap in the dielectric film between the wire and the second wire.
3. The method of claim 2, wherein the second wire is on and contacting the barrier layer.
4. The method of claim 3, wherein:
the second wire comprises a cap composed of a same material as the electroplated material; and
the second wire comprises sidewall spacers composed of a same material as the insulator material.
5. The method of claim 1, wherein:
the first conductive material comprises Ti or TiN;
the second conductive material comprises Ni or CoWP; and
the electroplated material comprises copper.
6. The method of claim 1, wherein the wire has sub-micron height and width.
7. The method of claim 1, wherein the electroplated material directly contacts a via in the via opening.
8. The method of claim 7, wherein the via electrically contacts another wire.
9. The method of claim 1, further comprising:
forming a second wire on the barrier layer, wherein:
the wire and the second wire have a same height; and
a spacing between the wire and the second wire is less than the height.
10. The method of claim 9, further comprising:
forming an air gap in a dielectric material between the wire and the second wire.
11. The method of claim 1, wherein a top surface of the spacers is at a same vertical level as a top surface of the cap layer.
12. A method of manufacturing a semiconductor structure, comprising:
forming a wire comprising:
forming a barrier layer;
depositing an electroplated material on and over the barrier layer;
forming a cap layer on and over the electroplated material; and
forming spacers on sidewalls of the electroplated material,

wherein:
the barrier layer comprises a first conductive material;
the cap layer comprises a second conductive material different than the first conductive material;
the spacers comprise an insulator material; and
an uppermost top surface of the spacers is at a same horizontal plane as an uppermost top surface of the cap layer.
13. The method of claim 12, wherein the cap layer comprises Ni (nickel) or CoWP (cobalt-tungsten-phosphide), and the method further comprises:
forming a dielectric film on and contacting the spacers and the cap layer.
14. The method of claim 13, further comprising:
forming a dielectric layer with a via opening, and wherein:
the barrier layer is on and contacting the dielectric layer;
the barrier layer is in the via opening;
the dielectric film is on and contacting a top surface of the dielectric layer.
15. The method of claim 14, further comprising:
forming a second wire on the barrier layer wherein: the wire and the second wire have a same height, and a spacing between the wire and the second wire is less than the height; and
forming an air gap in the dielectric film between the wire and the second wire.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for interference coordination in an inter-radio access technology (RAT) system, the method comprising:
acquiring information about a time-frequency resource of a first cell and information about an interference relationship between the first cell and a second cell, wherein the information about the interference relationship between the first cell and the second cell is used to determine interference imposed on the second cell by the first cell, and the first cell and the second cell are cells of different RATS; and
determining information about a time-frequency resource of the second cell according to the information about the time-frequency resource of the first cell and the information about the interference relationship, wherein the information about the time-frequency resource of the second cell is used by the second cell to schedule a time-frequency resource.
2. The method according to claim 1, wherein acquiring information about a time-frequency resource of a first cell comprises:
receiving the information about the time-frequency resource of the first cell, wherein the information about the time-frequency resource of the first cell is sent by a base station of the first cell.
3. The method according to claim 1, wherein acquiring information about an interference relationship between the first cell and the second cell comprises:
receiving the information about the interference relationship, wherein the information about the interference relationship is sent by a base station of the second cell.
4. The method according to claim 1, wherein the information about the time-frequency resource of the first cell comprises at least any piece of information about a carrier of the first cell, information about a power of the carrier, information about a timeslot, and information about a power in the timeslot.
5. The method according to claim 1, wherein the information about the interference relationship between the first cell and the second cell comprises at least information about the interference imposed on the second cell by the first cell.
6. The method according to claim 1, wherein determining information about a time-frequency resource of the second cell according to the information about the time-frequency resource of the first cell and the information about the interference relationship comprises:
determining an available time-frequency resource or an unavailable time-frequency resource of the second cell or information about strength of interference imposed on the time-frequency resource of the second cell.
7. The method according to claim 1, wherein the information about the time-frequency resource of the second cell is used to instruct the second cell to use a first carrier of the second cell to schedule a second carrier of the second cell in a cross-carrier manner, wherein the second carrier comprises a time-frequency resource shared by the first cell and the second cell.
8. The method according to claim 1, further comprising:
sending the information about the time-frequency resource of the second cell to a base station of the second cell.
9. An apparatus, comprising: a memory and one or more programs, where the one or more programs are stored in the memory, and one or more processors are configured to execute instructions included in the one or more programs, so as to perform the following operations:
acquiring information about a time-frequency resource of a first cell and information about an interference relationship between the first cell and a second cell, wherein the information about the interference relationship between the first cell and the second cell is used to determine interference imposed on the second cell by the first cell, and the first cell and the second cell are cells of different RATs; and
determining information about a time-frequency resource of the second cell according to the information about the time-frequency resource of the first cell and the information about the interference relationship, wherein the information about the time-frequency resource of the second cell is used by the second cell to schedule a time-frequency resource.
10. The apparatus according to claim 9, wherein the memory of the apparatus further comprises instructions for executing the following operation:
receiving the information about the time-frequency resource of the first cell, wherein the information about the time-frequency resource of the first cell is sent by a base station of the first cell.
11. The apparatus according to claim 9, wherein the memory of the apparatus further includes instructions for executing the following operation:
receiving the information about the interference relationship, wherein the information about the interference relationship is sent by a base station of the second cell.
12. The apparatus according to a claim 9, wherein the information about the time-frequency resource of the first cell comprises at least any piece of information about a carrier of the first cell, information about a power of the carrier, information about a timeslot, and information about a power in the timeslot.
13. The apparatus according to claim 9, wherein the information about the interference relationship between the first cell and the second cell comprises at least information about the interference imposed on the second cell by the first cell.
14. The apparatus according to claim 9, wherein the memory of the apparatus further includes instructions for executing the following operation:
determining an available time-frequency resource or an unavailable time-frequency resource of the second cell or information about strength of interference imposed on the time-frequency resource of the second cell.
15. The apparatus according to claim 9, wherein the information about the time-frequency resource of the second cell is used to instruct the second cell to use a first carrier of the second cell to schedule a second carrier of the second cell in a cross-carrier manner, wherein the second carrier comprises a time-frequency resource shared by the first cell and the second cell.
16. The apparatus according to claim 9, the memory of the apparatus further includes instructions for executing the following operation:
sending the information about the time-frequency resource of the second cell to a base station of the second cell.
17. The apparatus according to claim 9, wherein the apparatus is a multi-standard controller.
18. The apparatus according to claim 9, wherein the apparatus is a base station.
19. A non-transitory computer-readable storage medium having a program stored thereon, the program comprising instructions for executing a method for interference coordination in an inter-radio access technology (RAT) system, wherein the method comprises:
acquiring information about a time-frequency resource of a first cell and information about an interference relationship between the first cell and a second cell, wherein the information about the interference relationship between the first cell and the second cell is used to determine interference imposed on the second cell by the first cell, and the first cell and the second cell are cells of different RATs; and
determining information about a time-frequency resource of the second cell according to the information about the time-frequency resource of the first cell and the information about the interference relationship, wherein the information about the time-frequency resource of the second cell is used by the second cell to schedule a time-frequency resource.