Author: claimsbot

1. A direct-converting X-ray radiation detector for detecting X-ray radiation, comprising:
a semiconductor material, used to detect the X-ray radiation;
at least one collimator; and
at least one radiation source, to irradiates the semiconductor material with additional radiation,
the at least one collimator including at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected onto the semiconductor material.
2. The X-ray radiation detector of claim 1, wherein a gap for the additional radiation is designed between the semiconductor material and the at least one collimator.
3. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes a reflectance of at least 50%.
4. The X-ray radiation detector of claim 1, wherein the at least one reflection layer is designed to be flat.
5. The X-ray radiation detector of claim 1, wherein, the at least one reflection layer includes at least one curvature.
6. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes material properties varying as the distance from the radiation source varies.
7. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes different material properties viewed in the propagation direction of the additional radiation.
8. The X-ray radiation detector of claim 1, wherein an electrode attached to the semiconductor material, opposing the at least one reflection layer, includes at least one opening.
9. The X-ray radiation detector of claim 1, wherein the at least one reflection layer is formed from at least one material, selected from the following list: reflector paint, metal, plastic, compounds, and semiconductors.
10. A CT system comprising the direct-converting X-ray radiation detector of claim 1.
11. A method for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector, the method comprising:
indirectly irradiating a semiconductor material, used for detection, for the generation of additional charge carriers with additional radiation via at least one reflection layer.
12. The method of claim 11, wherein at least one reflection layer is used with a reflectance which varies at least one of in the propagation direction of the additional radiation and in the z direction of an X-ray radiation detector built into a CT system.
13. The method of claim 11, wherein an electrode, attached to the semiconductor material opposing the at least one reflection layer, is used with a transmittance which varies at least one of in the propagation direction of the additional radiation and in the z direction of an X-ray radiation detector built into a CT system.
14. The method of claim 11, wherein the semiconductor material is irradiated at least one of before and during the incidence of the X-ray radiation to be detected.
15. A CT system comprising the direct-converting X-ray radiation detector of claim 2.
16. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes a reflectance of at least 90%.
17. The X-ray radiation detector of claim 1, wherein the at least one reflection layer includes a reflectance of at least 99%.
18. The X-ray radiation detector of claim 1, wherein the at least one reflection layer is formed from at least one material, selected from the following list: reflector paint, light metal, laminated plastic, metal alloys and semiconductors.
19. The method of claim 12, wherein an electrode, attached to the semiconductor material opposing the at least one reflection layer, is used with a transmittance which varies at least one of in the propagation direction of the additional radiation and in the z direction of an X-ray radiation detector built into a CT system.
20. The method of claim 12, wherein the semiconductor material is irradiated at least one of before and during the incidence of the X-ray radiation to be detected.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A fixing device, adapted to be incorporated in an image forming apparatus and operable to fix a toner image on a recording medium, the fixing device comprising:
a first rotative member and a second rotative member, forming a nip portion therebetween, at which the toner image is fixed on the recording medium; and
a separator, having a first portion adapted to separate the recording medium, which has been passed through the nip portion, from one of the first rotative member and the second rotative member, the separator extending in a first direction which is perpendicular to a transporting direction of the recording medium, wherein:
the first portion is convex toward an upstream side of the transporting direction; and
the separator is curved such that both end portions thereof in the first direction are made closer to one of the first rotative member and the second rotative member than a center portion thereof in the first direction.
2. The fixing device as set forth in claim 1, wherein:
the separator comprises a second portion continued from the first portion and including a plurality of sections each of which extends in a direction different from each other, and each of which is adapted to guide the recording medium to an inlet of a subsequent stage of the image forming apparatus; and
a downstream end of the second portion relative to the transporting direction of the recording medium is disposed in the vicinity of the inlet.

1. A wind turbine generator comprising:
a load measurement unit configured to measure a load on each wind turbine blade;
a moment calculating unit configured to calculate a moment around a wind-turbine tower axis by carrying out coordinate transformation of the load on each wind turbine blade measured by the load measurement unit;
a component-command-value setting unit configured to calculate an angle command value around the wind-turbine tower axis by adding a yaw-control command value to a reference command value for canceling out the moment calculated by the moment calculating unit; and
a pitch-angle-command setting unit configured to set a pitch-angle command value for each wind turbine blade on the basis of the angle command value around the wind-turbine tower axis.
2. The wind turbine generator according to claim 1, wherein the yaw-control command value is provided to correspond to the wind direction.
3. The wind turbine generator according to claim 1, wherein the yaw-control command value is set on the basis of a wind direction deviation.
4. A yaw driving method for a wind turbine generator, the method comprising:
a step of measuring a load on each wind turbine blade;
a step of calculating a moment around a wind-turbine tower axis by carrying out coordinate transformation of the load on each wind turbine blade;
a step of calculating an angle command value around the wind-turbine tower axis by adding a tower-axis-control command value to a reference command value for making the moment zero; and
a step of setting a pitch-angle control value for each wind turbine blade on the basis of the angle command value around the wind-turbine tower axis.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A phase control thyristor comprising:
a main gate structure on a cathode side of the thyristor;
a plurality of local emitter shorts dots arranged in a shorts pattern on the cathode side of the thyristor, wherein:
the main gate structure includes longitudinal main gate beams extending from a center region of a surface of the cathode side towards a circumferential region;
neighboring main gate beams are arranged with a distance with respect to an associated intermediate middle line;
the shorts pattern is more homogeneous in a region closer to a corresponding one of the main gate beams than in a region closer to the associated middle line; and
the density of the emitter shorts dots is smaller in the region closer to the corresponding one of the main gate beams and larger in the region closer to the associated middle line.
2. The phase control thyristor according to claim 1, wherein the emitter short dots have a diameter between 30 to 500 \u03bcm.
3. The phase control thyristor according to claim 1, wherein the emitter short dots have a surface area of 2.5% up to 8% of the total area in the region closer to a main gate beam.
4. The phase control thyristor according to claim 1, wherein the emitter short dots have a surface area of 8% up to 20% of the total area in the region closer to an associated middle line.
5. The phase control thyristor according to claim 1, wherein a number of dots is between 12 to 10000cm2 in the region closer to a main gate beam.
6. The phase control thyristor according to claim 1, wherein a number of dots is between 40 to 30000cm2 in the region closer to the associated middle line.
7. The phase control thyristor according to claim 1, wherein the shorts dots in the region closer to a main gate beam have substantially the same spacings.
8. The phase control thyristor according to claim 1, wherein the shorts dots in the region closer to a main gate beam have substantially the same sizes.
9. The phase control thyristor according to claim 1, wherein the shorts dots in the region closer to a main gate beam have at least one of larger spacings and smaller sizes than the shorts dots in the region closer to the associated middle line.
10. The phase control thyristor according to claim 1, wherein neighboring main gate beams are arranged symmetrically with respect to the associated intermediate middle line.
11. The phase control thyristor according to claim 1, wherein the main gate beams are tapered with a beam width reducing from the center region towards the circumferential region.
12. The phase control thyristor according to claim 11, wherein the local width of the main gate beams is adapted to a local current density during regular thyristor operation.
13. The phase control thyristor according to claim 11, wherein the beam width continuously reduces from the center region towards the circumferential region.
14. The phase control thyristor according to claim 1, comprising:
a pilot thyristor on the cathode side, the pilot thyristor including a pilot gate structure comprising longitudinal pilot gate beams extending into a region of the main gate beams.
15. The phase control thyristor according to claim 2, wherein the emitter short dots have a diameter between 50 and 400 \u03bcm.
16. The phase control thyristor according to claim 2, wherein the emitter short dots have a diameter between 100 and 400 \u03bcm.
17. The phase control thyristor according to claim 4, wherein the emitter short dots have a surface area of 10% up to 20% of the total area in the region closer to the associated middle line.
18. The phase control thyristor according to claim 5, wherein the number of dots is between 100 to 3500cm2 in the region closer to the main gate beam.
19. The phase control thyristor according to claim 6, wherein the number of dots is at least 200cm2 to 30000cm2 in the region closer to the associated middle line.
20. The phase control thyristor according to claim 2, wherein the emitter short dots have a surface area of 2.5% up to 8% of the total area in the region closer to a main gate beam.
21. The phase control thyristor according to claim 2, wherein the emitter short dots have a surface area of 8% up to 20% of the total area in the region closer to an associated middle line.
22. The phase control thyristor according to claim 3, wherein a number of dots is between 12 to 10000cm2 in the region closer to a main gate beam.
23. The phase control thyristor according to claim 4, wherein a number of dots is between 40 to 30000cm2 in the region closer to the associated middle line.