Author: claimsbot

What is claimed is:

1. A twin bit cell flash memory device, the device comprising:
a semiconductor substrate;
a source and a drain positioned in a predetermined area of the semiconductor substrate, and the drain and the source separated by a predetermined distance;
a channel positioned on the surface of the semiconductor substrate between the source and the drain;
a first dielectric layer covering the surface of the channel;
a polysilicon germanium layer covering the surface of the first dielectric layer, the polysilicon germanium layer having an insulating region for separating the polysilicon germanium layer and forming two isolated conductive regions so as to form a twin bit cell structure;
a second dielectric layer covering the surface of the polysilicon germanium layer; and
a gate covering the surface of the second dielectric layer;
wherein each conductive region serves as a charge trapping layer so as to receive and store electrons injected into the conductive region to generate a respective bit.
2. The flash memory device of claim 1 wherein the semiconductor substrate is a P-type substrate, and the source and the drain are both N-type doped areas.
3. The flash memory device of claim 1 wherein the semiconductor substrate is an N-type substrate, and the source and the drain are both P-type doped areas.
4. The flash memory device of claim 1 wherein the chemical composition of the polysilicon germanium layer is Si1xGexx0.051.0.
5. The flash memory device of claim 1 wherein the insulating region is formed by implanting a high concentration of oxygen dopant into the polysilicon germanium layer, and then performing a thermal process.
6. The flash memory device of claim 5 wherein the high concentration of oxygen dopant is formed by an oxygen ion implantation process, the implanting dosage being approximately 121018cm2, the implanting energy ranging from 20 KeV to 80 KeV.
7. The flash memory device of claim 5 wherein the thermal process is a high temperature annealing process with a temperature range of 950 C. to 1150 C.
8. The flash memory device of claim 1 wherein the insulating region is formed by implanting a high concentration of nitrogen dopant into the polysilicon germanium layer, and then performing a thermal process.
9. The flash memory device of claim 1 wherein an oxide layer is also formed on the exposed side walls of each conductive region.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A planting container suitable to be three-dimensionally stacked to form a plurality of planting columns by using a plurality of ones with the same structure, the planting columns being arranged around a center line parallel to the gravity direction so as to set up a planting tower, the planting container comprising:
a bottom wall; and
a side wall extending from the peripheral of the bottom wall and defining a containing space with the bottom wall, and the side wall having a planting opening communicating with the containing space,
wherein the side wall has a top end and a bottom end, the bottom end is closer to the bottom wall than the top end, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the bottom end of the upper planting container engages with the top end of the lower planting container,
wherein the side wall laterally tilts towards the center line relatively to the bottom wall, so that the planting column tilts towards the adjacent planting column and tilts towards the center line.
2. The planting container as claimed in claim 1, wherein the bottom wall has a plurality of drain holes.
3. The planting container as claimed in claim 1, wherein the bottom end has a step structure, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the upper planting container engages with the lower planting container through the step structure.
4. The planting container as claimed in claim 1, wherein the planting opening extends to the top end, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the side wall of the upper planting container is overlapped with the planting opening of the lower planting container for defining the region of the planting opening communicating with the containing space.
5. The planting container as claimed in claim 1, further comprising:
a holding cup connected to the side wall and communicating with the planting opening.
6. The planting container as claimed in claim 1, wherein the side wall has a front portion, a first side portion, a second side portion and a rear portion, the front portion is opposite to the rear portion, the first side portion connects a side of the front portion and a side of the rear portion, the second side portion connects another side of the front portion and another side of the rear portion, both the first side portion and the second side portion tilt relatively to the bottom wall along the direction from the first side portion to the second side portion so that the planting column tilts towards the adjacent planting column, and both the front portion and the rear portion tilt relatively to the bottom wall along the direction from the front portion to the rear portion so that the planting columns tilt towards the center line.
7. The planting container as claimed in claim 6, wherein the side wall has a first guiding pipe notch and a second guiding pipe notch suitable for allowing a guiding pipe to extend and pass through, the first guiding pipe notch is located at the first side portion and extends to the top end, the second guiding pipe notch is located at the second side portion and extends to the top end, the lower end of the first guiding pipe notch is closer to the bottom wall than the lower end of the second guiding pipe notch, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the side wall of the upper planting container is overlapped with the first guiding pipe notch and the second guiding pipe notch of the lower planting container for defining the region used to allow the guiding pipe extending and passing through by the first guiding pipe notch and the second guiding pipe notch.
8. The planting container as claimed in claim 7, wherein the depth of the first guiding pipe notch relative to the top end is greater than the depth of the second guiding pipe notch relative to the top end.
9. A planting tower, comprising:
a plurality of planting columns arranged around a center line parallel to the gravity direction, each of the planting columns comprising a plurality of planting containers three-dimensionally stacked by each other with the same structure,
wherein each of the planting containers comprises:
a bottom wall; and
a side wall extending from the peripheral of the bottom wall and defining a containing space with the bottom wall, the side wall having a planting opening communicating with the containing space,
wherein the side wall has a top end and a bottom end, the bottom end is closer to the bottom wall than the top end, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the bottom end of the upper planting container engages with the top end of the lower planting container,
wherein the side wall laterally tilts towards the center line relatively to the bottom wall, so that the planting column tilts towards the adjacent planting column and tilts towards the center line.
10. The planting tower as claimed in claim 9, wherein the bottom wall has a plurality of drain holes.
11. The planting tower as claimed in claim 9, wherein the bottom end has a step structure, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the upper planting container engages with the lower planting container through the step structure.
12. The planting tower as claimed in claim 9, wherein the planting opening extends to the top end, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the side wall of the upper planting container is overlapped with the planting opening of the lower planting container for defining the region of the planting opening communicating with the containing space.
13. The planting tower as claimed in claim 9, wherein the planting container further comprises:
a holding cup connected to the side wall and communicating with the planting opening.
14. The planting tower as claimed in claim 9, wherein the side wall has a front portion, a first side portion, a second side portion and a rear portion, the front portion is opposite to the rear portion, the first side portion connects a side of the front portion and a side of the rear portion, the second side portion connects another side of the front portion and another side of the rear portion, both the first side portion and the second side portion tilt relatively to the bottom wall along the direction from the first side portion to the second side portion so that the planting column tilts towards the adjacent planting column, and both the front portion and the rear portion tilt relatively to the bottom wall along the direction from the front portion to the rear portion so that the planting columns tilt towards the center line.
15. The planting tower as claimed in claim 9, further comprising:
a guiding pipe extending and passing through the planting containers for applying planting liquid material,
wherein the side wall has a first guiding pipe notch and a second guiding pipe notch for allowing the guiding pipe to extend and pass through, the first guiding pipe notch is located at the first side portion and extends to the top end, the second guiding pipe notch is located at the second side portion and extends to the top end, the lower end of the first guiding pipe notch is closer to the bottom wall than the lower end of the second guiding pipe notch, and when two of the planting containers with the same structure are three-dimensionally stacked by each other, the side wall of the upper planting container is overlapped with the first guiding pipe notch and the second guiding pipe notch of the lower planting container for defining the region used to allow the guiding pipe extending and passing through by the first guiding pipe notch and the second guiding pipe notch.
16. The planting tower as claimed in claim 15, wherein the depth of the first guiding pipe notch relative to the top end is greater than the depth of the second guiding pipe notch relative to the top end so that a section of the guiding pipe passing through the same planting container tilts towards the gravity direction.
17. The planting tower as claimed in claim 9, further comprising:
a base for setting up the planting columns.
18. The planting tower as claimed in claim 9, further comprising:
a guiding pipe extending and passing through the planting containers for applying planting liquid material.
19. The planting tower as claimed in claim 18, wherein the guiding pipe helically extends and passes through the planting containers.
20. The planting tower as claimed in claim 9, wherein the planting column further comprises:
a bottom frame connected to the bottom of the corresponding planting container for increasing the height of the corresponding planting column.

1. A device for the detection of single photons in the visible and infrared spectrum, the device comprising a waveguide layer on a substrate and a superconducting nanowire positioned atop of the waveguide layer, wherein the superconducting nanowire comprises NbTiN.
2. The device of claim 1, wherein the waveguide layer is made of a material selected from the group of silicon nitride, aluminum nitride, gallium nitride, sapphire, diamond, silicon, gallium phosphide, silicon oxide, and magnesium oxide
3. The device of claim 1, wherein the superconducting nanowire comprises two longitudinal segments running along the length of the waveguide and wherein the longitudinal segments are attached to each other at one end by a curved region, thereby forming a U-shaped nanowire.
4. The device of claim 1, wherein the nanowire has a thickness of about 0.5 nm to about 100 nm.
5. The device of claim 1, wherein the length of the nanowire is about 1 \u03bcm to about 200 \u03bcm.
6. The device of claim 3, wherein the width of at least one of the longitudinal segments is about 30 nm to about 100 nm.
7. The device of claim 1, wherein the substrate is a wafer comprising an insulator layer.
8. The device of claim 1, wherein the thickness of the waveguide layer is about 10 nm to about 5000 nm.
9. The device of claim 1, wherein the width of the waveguide layer is about 10 nm to about 5000 nm.
10. The device of claim 1, wherein the device comprises at least one grating coupler for coupling of an optical fiber to the device.
11. The device of claim 1, wherein the nanowire is connected to an electrode.
12. The device of claim 1, wherein the device is integrated within a photonic chip.
13. A device for the detection of single photons in the visible and infrared spectrum, the device comprising a waveguide layer on a substrate and a superconducting nanowire positioned atop of the waveguide layer, wherein the waveguide layer comprises silicon nitride.
14. The device of claim 13, wherein the superconducting nanowire is composed of a material selected from the group of NbN, NbTiN, MgB2, High Tc cubrates including YBCO, and iron based superconductors.
15. The device of claim 13, wherein the superconducting nanowire comprises two longitudinal segments running along the length of the waveguide and wherein the longitudinal segments are attached to each other at one end by a curved region, thereby forming a U-shaped nanowire.
16. The device of claim 13, wherein the nanowire has a thickness of about 0.5 nm to about 100 nm.
17. The device of claim 13, wherein the length of the nanowire is about 1 \u03bcm to about 200 \u03bcm.
18. The device of claim 15, wherein the width of at least one of the longitudinal segments is about 30 nm to about 100 nm.
19. The device of claim 13, wherein the substrate is a wafer comprising an insulator layer.
20. The device of claim 13, wherein the thickness of the waveguide layer is about 10 nm to about 5000 nm.
21. The device of claim 13, wherein the width of the waveguide layer is about 10 nm to about 5000 nm.
22. The device of claim 13, wherein the device comprises at least one grating coupler for coupling of an optical fiber to the device.
23. The device of claim 13, wherein the nanowire is connected to an electrode.
24. The device of claim 13, wherein the device is integrated within a photonic chip.
25. A device for the detection of single photons in the visible and infrared spectrum, the device comprising a buried waveguide layer in a substrate and a superconducting nanowire.
26. The device of claim 25, wherein the substrate comprises a cavity exposing at least a portion of the buried waveguide layer, and wherein the superconducting nanowire is positioned atop the exposed portion of the buried waveguide layer.
27. The device of claim 25, wherein the device further comprises a surface waveguide layer evanescently coupled to the buried waveguide layer, and wherein the superconducting nanowire is positioned atop the surface waveguide layer.
28. A device for the detection of single photons in the visible and infrared spectrum, the device comprising:
a substrate layer having a cavity;
a silicon nitride layer atop the substrate layer and cavity;
a superconductor nanowire atop the silicon nitride layer, wherein the nanowire is positioned above the cavity;
an insulator layer atop the superconducting nanowire; and
a reflector layer atop the insulator layer.
29. The device of claim 28, wherein the superconducting nanowire is composed of a material selected from the group of NbN, NbTiN, MgB2, High Tc cubrates including YBCO, and iron based superconductors.
30. The device of claim 28, wherein the cavity comprises a geometry such that an optical fiber self-aligns to the superconducting nanowire when inserted into the cavity such that light from the optical fiber passes through the silicon nitride layer and to the superconducting nanowire.
31. A system for the detection of single photons in the visible and infrared spectrum comprising:
at least one device for detecting a photon, the at least one device comprising a waveguide layer on a substrate and a superconducting nanowire positioned atop of the waveguide layer,
at least one optical fiber optically coupled to a waveguide of the at least one device; and
a tool for measuring the output of the superconducting nanowire of the at least one device.
32. The system of claim 31, wherein the waveguide layer is made of a material selected from the group of silicon nitride, aluminum nitride, gallium nitride, sapphire, diamond, silicon, gallium phosphide, silicon oxide, and magnesium oxide.
33. The system of claim 31, wherein the superconducting nanowire is made of a material selected from the group of NbN, NbTiN, MgB2, High Tc cubrates including YBCO, and iron based superconductors.
34. The system of claim 31, wherein the superconducting nanowire comprises two longitudinal segments running along the length of the waveguide and wherein the longitudinal segments are attached to each other at one end by a curved region, thereby forming a U-shaped nanowire.
35. The system of claim 31, wherein the nanowire is connected to an electrode.
36. The system of claim 31, wherein the at least one device is integrated within a photonic chip.
37. The system of claim 31, wherein the system comprises an external current source for delivering a bias current to the superconducting nanowire.
38. The system of claim 31, wherein the system comprises an RF-probe for detecting the output of the nanowire.
39. The system of claim 31, where the at least one device is housed within a cryostat.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An LED lighting device with wireless network capabilities, comprising:
an LED lighting unit configured to emit light;
an LED driving circuit configured to drive the LED lighting unit, the LED driving circuit being connected to the LED lighting unit;
a controller configured to control the LED lighting unit; and
a Wi-Fi module configured to receive and send data, the Wi-Fi module sending data to another LED lighting device.
2. An LED lighting device with wireless network capabilities, comprising:
an LED lighting unit configured to emit light;
an LED driving circuit configured to drive the LED lighting unit;
a controller configured to control the LED lighting unit, the controller being connected to the LED driving circuit; and
a Wi-Fi module configured to receive and send data, the Wi-Fi module being connected to the LED driving circuit and the LED lighting unit;
wherein the controller is integrated into the Wi-Fi module; and the Wi-Fi module sends data to another LED lighting device.
3. The LED lighting device according to claim 1, wherein the controller connects to the LED driving circuit and the Wi-Fi module.
4. The LED lighting device according to claim 1, wherein the Wi-Fi module uses an external antenna or an internally integrated antenna.
5. The LED lighting device according to claim 2, wherein the Wi-Fi module uses an external antenna or an internally integrated antenna.
6. The LED lighting device according to claim 1, wherein the Wi-Fi module connects the LED device to the internet or a local area network.
7. The LED lighting device according to claim 2, wherein the Wi-Fi module connects the LED device to the internet or a local area network.
8. The LED lighting device according to claim 1, wherein the Wi-Fi module acts as a wireless access point, a gateway, or a repeater.
9. The LED lighting device according to claim 2, wherein the Wi-Fi module acts as a wireless access point, a gateway, or a repeater.
10. The LED lighting device according to claim 1, wherein the Wi-Fi module works at 2.4 GHz or 5 GHz.
11. An LED lighting network system with two or more LED lighting devices forming a mesh or ad hoc wireless network, each LED lighting device comprising:
an LED lighting unit configured to emit light;
an LED driving circuit configured to drive the LED lighting unit, the LED driving circuit being connected to the LED lighting unit;
a controller configured to control the LED lighting unit; and
a Wi-Fi module configured to receive and send data;
wherein each LED lighting device works as a network node, transmitting signals to other LED lighting devices within its Wi-Fi coverage range.
12. The LED lighting network system according to claim 11, wherein the system is connected to the internet or a local area network through Wi-Fi signals.
13. The LED lighting network system according to claim 11, wherein each LED lighting device acts as a wireless gateway, a wireless access point, or a wireless repeater.
14. The LED lighting network system according to claim 11, wherein a remote terminal, which monitors status of an LED lighting device and controls the LED lighting device, is connected to the LED lighting device in the LED lighting network using Wi-Fi signals.
15. The LED lighting network system according to claim 14, wherein the remote terminal is a computer, a tablet, or a smartphone.