Author: claimsbot

What is claim is:

1. A semiconductor manufacturing system equipped with a reactor and a feed gas supply unit and capable of manufacturing compound semiconductor by an epitaxial vapor deposition process by using a nozzle unit installed in the reactor to discharge feed gas from the feed gas supply unit toward a surface of a substrate mounted in the reactor,
the semiconductor manufacturing system being characterized in that:
a pressure differential is produced between the inner side and outer side of a feed gas nozzle member of the nozzle unit.
2. A semiconductor manufacturing system as set out in claim 1, wherein the pressure differential is produced by installing a pressure differential producing device in the nozzle unit.
3. A semiconductor manufacturing system as set out in claim 2, wherein multiple stages of the pressure differential producing device are provided.
4. A semiconductor manufacturing system as set out in claim 2 or 3, wherein the differential pressure producing device is at least one perforated plate installed in the vicinity of the feed gas nozzle member of the nozzle unit.
5. A semiconductor manufacturing system as set out in claim 1, wherein the reactor is provided with a cooling system for cooling the peripheral wall portion of the reactor.
6. A semiconductor manufacturing system as set out in claim 2, wherein the differential pressure producing device is constituted by installing at least one baffle plate in the nozzle unit.
7. A semiconductor manufacturing system as set out in claim 6, wherein a perforated plate is installed in the vicinity of the feed gas nozzle member of the nozzle unit.
8. A semiconductor manufacturing system as set out in claim 6 or 7, wherein the reactor is provided with a cooling system for cooling a peripheral wall portion of the reactor.
9. A semiconductor manufacturing system equipped with a feed gas supply unit and a reactor for receiving feed gas from the feed gas supply unit and forming a thin-film crystal layer on a semiconductor substrate by metalorganic chemical vapor deposition,
the semiconductor manufacturing system being characterized in comprising:
a lead-in member provided in the reactor for feeding the feed gas received from the feed gas supply unit onto the surface of the semiconductor substrate, which lead-in member includes a void-like guide passage for conducting the feed gas from the feed gas supply unit in a prescribed first direction and a gas nozzle for jetting the feed gas from the void-like guide passage in a second direction substantially perpendicular to the first direction,
the semiconductor substrate being bathed in the flow of feed gas from the gas nozzle.
10. A semiconductor manufacturing system as set out in claim 9, wherein the lead-in member is provided with a hollow bar-shaped member wherein the void-like guide passage and the gas nozzle are formed.
11. A semiconductor manufacturing system as set out in claim 9 or 10, wherein the gas nozzle is composed of multiple apertures spaced apart in the first direction.
12. A semiconductor manufacturing system as set out in claim 11, wherein the spacing of the multiple apertures is such that the gas flow formed by the feed gas jetted from the multiple apertures is uniform on the semiconductor substrate.
13. A semiconductor manufacturing system as set out in claim 11, wherein the apertures are formed as through-holes.
14. A semiconductor manufacturing system as set out in claim 9 or 10, wherein the gas nozzle is composed of a slit extending in the first direction.
15. A semiconductor manufacturing system as set out in claim 9, wherein the lead-in member is formed internally with at least one coolant passage for passing a coolant for cooling the feed gas passing through the void-like guide passage.
16. A semiconductor manufacturing system as set out in claim 15, wherein the at least one coolant passage is provided adjacent to the void-like guide passage.
17. A semiconductor manufacturing system as set out in claim 16, wherein two coolant passages are provided adjacent to the void-like guide passage on opposite sides.
18. A semiconductor manufacturing system as set out in claim 9, wherein the lead-in member is provided with a hollow annular member in which the void-like guide passage and the gas nozzle are formed.
19. A semiconductor manufacturing system as set out in claim 18, wherein the gas nozzle is composed of multiple apertures spaced apart in the first direction.
20. A semiconductor manufacturing system as set out in claim 18 or 19, wherein the apertures are formed as through-holes.
21. A semiconductor manufacturing system as set out in claim 19, wherein the spacing of the multiple apertures is such that the gas flow formed by the feed gas jetted from the multiple apertures is uniform on the semiconductor substrate.
22. A compound semiconductor manufacturing system for manufacturing compound semiconductor using any one of the semiconductor manufacturing systems of claim 9, 10, 15, 16, 17, 18, 19 or 21.
23. A method for manufacturing III-V Group compound semiconductor by introducing multiple kinds of feed gas into a reactor in which a substrate on which thin-film crystal layers are to be formed has been mounted and depositing thin-film crystal layers on the substrate by hydride vapor phase epitaxy or metalorganic chemical vapor deposition, which method is characterized in comprising the steps of leading the multiple feed gases to the vicinity of the substrate individually and using a blow gas separately led into the reactor to mix the multiple feed gases present in the vicinity of the substrate and then blow the mixed feed gases toward the substrate.
24. A system for manufacturing III-V Group compound semiconductor that is adapted to introduce multiple kinds of feed gas into a reactor in which a substrate has been mounted and form thin-film crystal layers on the substrate by hydride vapor phase epitaxy or metalorganic chemical vapor deposition, which system is characterized in comprising a lead-in member provided in the reactor for introducing the multiple feed gases into the reactor and leading them to the vicinity of the substrate individually and for leading a blow gas supplied from outside the reactor to the vicinity of the substrate, and a blow member provided at an outlet of the lead-in member for, after the multiple feed gases exiting the lead-in member have been mixed by the blow gas, blowing the blow gas onto the multiple feed gases to blow them toward the substrate.
25. A system for manufacturing III-V Group compound semiconductor as set out in claim 24, wherein the blow member is a perforated plate.
26. A system for manufacturing III-V Group compound semiconductor as set out in claim 24 or 25, further comprising a cooling system for cooling a peripheral wall portion of the reactor with a coolant.
27. A system for manufacturing III-V Group compound semiconductor as set out in claim 24, wherein the lead-in member stratifies the multiple feed gases fed to the vicinity of the substrate.
28. III-V Group compound semiconductor manufactured using the method for manufacturing III-V Group compound semiconductor set out in claim 23.
29. III-V Group compound semiconductor manufactured using the system for manufacturing III-V Group compound semiconductor set out in claim 24 or 27.
30. III-V Group compound semiconductor manufactured using the system for manufacturing III-V Group compound semiconductor set out in claim 26.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. An imidazopyridine derivative represented by formula (I) or salts thereof:
217
wherein R1 represents H, -a lower alkyl, -a lower alkenyl, -a lower alkynyl, -a cycloalkyl, -a cycloalkenyl, -a halogen, NO2, CN, -a halogenated lower alkyl, ORa, SRa, SO2Ra, SORa, CO2Ra, CORa, -an aryl, -a lower alkylene-an aryl, O-a lower alkylene-an aryl, CONRaRb, CO-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), SO2NRaRb, SO2-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), SO3H, -(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), NRaRb, CONRa-a lower alkylene-ORb, CONRa-a lower alkylene-NRbRc, CONRa-a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), O-a lower alkylene-ORa, O-a lower alkylene-O-a lower alkylene-ORa, O-a lower alkylene-NRaRb, O-a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), O-a lower alkylene-O-a lower alkylene-NRaRb, O-a lower alkylene-O-a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), O-a lower alkylene-NRc-a lower alkylene-NRaRb, O-a lower alkylene-NRc-a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), OCONRaRb, OCO-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), NRaSO2Rb, NRc-a lower alkylene-NRaRb, NRc-a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), N(a lower alkylene-NRaRb)2, N(a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group))2, CONRaORb, NRaCORb, NRaCONRbRc, NRaCO-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), or OCORa;
Ra, Rb and Rc which may be the same or different, represent H, -a lower alkyl or -an aryl;
T represents N or CR1a;
U represents N or CR3;
n represents an integer, 1, 2 or 3;
in Y1 . . . Y2 . . . Y3,
i) . . . represents a single bond on one side and a single or double bond on the other side, Y1 represents CR5 or CR5aR5b, Y2 represents N, NH, CR4a or CR4bR4c, and Y3 represents NR6, CR4d or CR4eR4f, whereas Y3 represents NR6 when Y2 represents CR4a or CR4bR4c,
or, ii) Y1 and Y3 may be bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form a B ring, wherein the B ring represents a 5- or 6-membered monocyclic heteroaryl ring having 1 to 4 hetero atoms selected from the group consisting of N, S, and O, a nitrogen-containing saturated heterocyclic ring or an aryl ring, whereas said B ring may be substituted by one to two R4s;

X represents S, SO or SO2, whereas X may also represent CO, NR7 or a methylene group when Y1 and Y3 are bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form the B ring;
A represents a linkage, a lower alkylene, a lower alkenylene or a lower alkynylene;
R2 represents -a lower alkyl which may have one or more subsituents, -a lower alkenyl which may have one or more subsituents, -a lower alkynyl which may have one or more subsituents, -a cycloalkyl which may have one or more subsituents, -a cycloalkenyl which may have one or more subsituents, NO, -an aryl which may have one or more subsituents, or -a heteroaryl which may have one or more subsituents;
R1a, R3, R4a, R4b, R4c, R4d, R4e, R4f, R5a, and R5b, which may be the same or different, represent a group defined by R1, whereas R4b and R4c, R4e and R4f, or R5a and R5b may be combined with each other to form an oxo group (O);
R 4 represents a group defined by R1, or an oxo group (O);
R5, R6, and R7, which may be the same or different, represent H, -a lower alkyl which may have one or more subsituents, -a lower alkenyl which may have one or more subsituents, -a lower alkynyl which may have one or more subsituents, with proviso that when X is NR7 and R2 is an aryl having a substituent at the ortho-position, R7 may be combined with the substituent at the ortho-position to form a C2-3 lower alkylene chain, and with the aryl of R2 to form a 5- to 7-membered nitrogen-containing heterocyclic ring fused with a benzene ring(s) of the aryl group;
with the proviso that
(1) X represents a group other than NR7 when Y1 Y2 Y3 is bonded with X via N atom or Y1 and Y3 are bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form a 1,3,5-triazine or 1,3,4-oxadiazole ring; and
(2) X represents SO, SO2, CO or a methylene group when Y1 and Y3 are bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form a primidine ring.
2. The imidazopyridine derivative or a salt thereof according to claim 1, wherein R1 represents H, -a lower alkyl, -a lower alkenyl, -a lower alkynyl, -a cycloalkyl, -acycloalkenyl, -a halogen, NO2, CN, -a halogenated lower alkyl, OH, O-a lower alkyl, O-an aryl, SH, S-a lower alkyl, SO2-a lower alkyl, SO-a lower alkyl, COOH, COO-a lower alkyl, CO-a lower alkyl, -an aryl, CO-an aryl, -a lower alkylene-an aryl, O-a lower alkylene-an aryl, CONH2, SO2NH2, SO3H, -a nitrogen-containing saturated heterocyclic group, NH2, NH-a lower alkyl or N(a lower alkyl)2; T represents CR1a; U represents CR3; in Y1 Y2 Y3, i) represents a single bond on one side and a single or double bond on the other side, Y1 represents CR5 or CH5a, Y2 represents N, CR4a or CHR4b, and Y3 represents NR7, CR4d or CHR4e, or, ii) Y1 and Y3 may be bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form a B ring, wherein the B ring represents a 5- or 6-membered monocyclic heteroaryl ring having 1 to 4 hetero atoms selected from the group consisting of N, S, and O, or an aryl, whereas said B ring may be substituted by one to two R4s; R2 represents H, -a halogenated loweralkyl, NO, -an aryl which may have one or more subsituents, or -a heteroaryl which may have one or more subsituents; R1a, R3, R4, R4a, R4b, R4d and R4e, which may be the same or different, represent a group defined by R1; and R5, R5a, R6 and R7, which may be the same or different, represents H, -a lower alkyl, with proviso that when X is NR7 and R2 is an aryl having a substituent at the ortho-position, R7 may be combined with the substituent at the ortho-position to form a C2-3 lower alkylene chain, and with the aryl of R2 to form a 5- to 7-membered nitrogen-containing heterocyclic ring fused with a benzene ring(s) of the aryl group.
3. The imidazopyridine derivative or a salt thereof according to claim 1, wherein n represents 1; and R1 represents -a lower alkyl, a halogen, CN, NO2, -a halogenated lower alkyl, ORa, O-a lower alkylene-an aryl, COORa, CONRa-a lower alkylene-ORb, CONRaRb, CO-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), CONRa-a lower alkylene-NRbRc, CONRa-a lower alkylene-(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), or -an aryl.
4. The imidazopyridine derivative or a salt thereof according to claim 1, wherein A represents a linkage and R2 represents -an aryl which may have one or more substituents or -a heteroaryl which may have one or more substituents.
5. The imidazopyridine derivative or a salt thereof according to claim 4, wherein R2 represents a phenyl which may have one or more substituents selected from the group consisting of -(a lower alkyl which may be substituted by OH), -a lower alkenyl, -a halogen, NO2, CN, -a halogenated lower alkyl, O-a halogenated lower alkyl, OH, O-a lower alkyl, CO-a lower alkyl, SO2-a lower alkyl, COOH, COO-a lower alkyl, CONH2, SO2NH2, CO-an aryl, SO2-an aryl, NH2, NH-a lower alkyl, N(a lower alkyl)2, -(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), NHCO-a lower alkyl, -an aryl which may be substituted by 1 to 5 substituents selected from Group E, and -a heteroaryl which may be substituted by 1 to 5 substituents selected from Group E, whereas Group E consists of -a lower alkyl, -a lower alkenyl, -a lower alkynyl, -a halogen, NO2, CN, OH, O-a lower alkyl, O-a halogenated lower alkyl, SH, S-a lower alkyl, SO2-a lower alkyl, SO-a lower alkyl, COOH, COO-a lower alkyl, CO-a lower alkyl, CONH2, NH2, NH-a lower alkyl, N(a lower alkyl)2, -(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group), -an aryl, -a heteroaryl, -a cycloalkyl and -a cycloalkenyl.
6. The imidazopyridine derivative or a salt thereof according to claim 1, wherein X represents SO2.
7. The imidazopyridine derivative or a salt thereof according to claim 1, wherein i) Y1 . . . Y2 . . . Y3 represents CR5NNR6, CR5aR5bNHNR6, CR5aR5bCR4bR4cNR6 or ii) Y1 and Y3 of Y1 . . . Y2 . . . Y3 are bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form a 5- or 6-membered monocyclic heteroaryl ring, wherein said 5- or 6-membered monocyclic heteroaryl ring may be substituted by one to two R4s.
8. The imidazopyridine derivative or a salt thereof according to claim 7, wherein Y1 . . . Y2 . . . Y3 represents CR5NNR6; R5 represents H or a lower alkyl; and R6 represents H, -a lower alkyl or -a lower alkenyl, wherein -a lower alkyl or -a lower alkenyl may be substituted by one or more substituents selected from a group consisting of O-a lower alkyl, S-a lower alkyl, SO2-a lower alkyl, SO-a lower allyl, COOH, COO-a lower alkyl, CO-a lower alkyl, CONH2, NH2, NH-a lower alkyl, N(a lower alkyl)2, -(a nitrogen-containing saturated heterocyclic group which may be substituted by a lower alkyl group) and -an aryl.
9. The imidazopyridine derivative or a salt thereof according to claim 7, wherein Y1 and Y3 of Y1 . . . Y2 . . . Y3 are bonded with each other via 2 or 3 atoms and combined with the adjacent Y2 to form a 5-membered monocyclic heteroaryl ring which may be substituted by one to two R4s selected from the group consisting of -a lower alkyl, COOH, COO-a lower alkyl, CO-a lower alkyl and SO3H.
10. The imidazopyridine derivative or a salt thereof according to claim 1, which is selected from the group consisting of 3-(6-bromo-2-methylimidazo1,2-apyridin-3-yl)-1H-pyrazol-1-yl 2-methyl-5-nitrophenyl sulfone; 3-(6-bromoimidazo1,2-apyridin-3-yl)-1H-pyrazol-1-yl 2-methyl-5-nitrophenyl sulfone; 2-(6-bromoimidazo1,2-apyridin-3-yl)methylidene-1,2-dimethyl-5-nitrobenzenesulfonohydrazide; 2-(6-bromoimidazo1,2-apyridin-3-yl)methylidene-2-ethyl-1-methyl-5-nitrobenzenesulfonohydrazide; 3-(2-(6-bromoimidazo1,2-apyridin-3-yl)methylidene-1-methylhydrazinosulfonyl)-4-methylbenzonitrile; 2-(6-fluoroimidazo1,2-apyridin-3-yl)methylidene-1,2-dimethyl-5-nitrobenzenesulfonohydrazide; 2-amino-2-(6-chloroimidazo1,2-apyridin-3-yl)methylidene-1-methyl-5-nitrobenzenesulfonohydrazide; 2-(6-chloroimidazo1,2-apyridin-3-yl)methylidene-1-methyl-5-nitro-2-(2,2,2-trifluoroethoxy)benzenesulfonohydrazide; 6-chloro-3-2-(2-methyl-5-nitrobenzenesulfonyl)thiazol-4-ylimidazo1,2-apyridine; 6-bromo-3-(2-methyl-5-nitrobenzenesulfonyl)(2-morpholinoethyl)hydrazonomethylimidazo1,2-apyridine; 6-chloro-3-(methyl)(2-methyl-5-nitrobenzenesulfonyl)hydrazonomethylimidazo1,2-apyridine; 3-(methyl)(2-methyl-5-nitrobenzenesulfonyl)hydrazonomethylimidazo1,2-apyridine-6-carbonitrile; 5-cyano-2-(6-fluoroimidazo1,2-apyridin-3-yl)methylidene-1,2-dimethylbenzenesulfonohydrazide; 5-cyano-2-(6-cyanoimidazo1,2-apyridin-3-yl)methylidene-1,2-dimethylbenzenesulfonohydrazide; 12-dimethyl-2-(6-methylimidazo1,2-apyridin-3-yl)methylidene-5-nitrobenzenesulfonohydrazide; 2-(6-chloroimidazo1,2-apyridin-3-yl)methylidene-2-(1H-imidazol-1-yl)-1-methyl-5-nitrobenzenesulfonohydrazide; 2-(6-chloroimidazo1,2-apyridin-3-yl)methylidene-2-dimethylamino-1-methyl-5-nitrobenzenesulfonohydrazide; and salts thereof.
11. A pharmaceutical composition comprising the imidazopyridine derivative or a salt thereof according to any one of claims 1 to 10 and a pharmaceutically acceptable carrier.
12. The pharmaceutical composition according to claim 11, wherein the pharmaceutical composition is a phosphatidylinositol 3-kinase inhibitor.
13. The pharmaceutical composition according to claim 11, wherein the pharmaceutical composition is an antitumor agent
14. A method to treat disorders in which phosphatidylinositol 3-kinase plays a role, wherein the method comprises of administering to a patient an effective amount of the imidazopyridine derivative or a salt thereof according to claim 1.
15. The method of claim 14 to treat disorders in which phosphatidylinositol 3-kinase plays a role, wherein the disorders in which phosphatidylinositol 3-kinase plays a role are cancers.

What is claimed is:

1. A group III nitride compound semiconductor light-emitting device comprising:
a substrate;
a group III nitride compound semiconductor laminated on said substrate;
a p-type clad layer comprising p-type AlxGa1xN (0<x<1); and
a p-type contact layer comprising p-type AlyGa1yN (0<y<x) which is lower in a composition ratio of aluminum than said p-type clad layer.
2. A group III nitride compound semiconductor light-emitting device according to claim 1, wherein said p-type contact layer comprises AlyGa1yN (0.1xy0.7x).
3. A group III nitride compound semiconductor light-emitting device according to claim 1, wherein said p-type contact layer comprises AlyGa1yN (0.01y0.12).
4. A group III nitride compound semiconductor light-emitting device according to claim 1, wherein a thickness of said p-type contact layer is in a range of from 200 to 1000 .
5. A group III nitride compound semiconductor light-emitting device according to claim 2, wherein a thickness of said p-type contact layer is in a range of from 200 to 1000 .
6. A group III nitride compound semiconductor light-emitting device according to claim 3, wherein a thickness of said p-type contact layer is in a range of from 200 to 1000 .

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An isolated nucleic acid molecule comprising a nucleotide sequence having at least 90% sequence identitiy to the nucleotide sequence shown in FIG. 1 (SEQ ID NO: 1).
2. An isolated nucleic acid molecule comprising the nucleotide sequence shown in FIG. 1 (SEQ ID NO:1).
3. The nucleic acid molecule of claim 2 which is a variant nucleic acid molecule.
4. An isolated nucleic acid molecule that hybridizes under stringent conditions to the compliment of the nucleotide sequence shown in FIG. 1 (SEQ ID NO:1).
5. An expression vector comprising the nucleic acid of claim 1-4.
6. The expression vector of claim 5, wherein said nucleic acid is operably linked to control sequences recognized by a host cell transformed with the vector.
7. A host cell comprising the expression vector of claim 6.
8. The host cell of claim 7, which is a mammalian cell, an E.coli cell or a yeast cell.
9. A process for producing a polypeptide comprising culturing the host cell of claim 8, under conditions suitable for expression of said polypeptide and recovering said polypeptide from the cell culture.
10. An isolated ML-IAP chimera polypeptide comprising at least 90% amino acid sequence identity to a polypeptide encoded by the nuclotide sequence shown in FIG. 1 (SEQ ID NO:1).
11. An isolated polypeptide having at least 90% amino acid sequence identity to:
(a) the polypeptide shown in FIG. 2 (SEQ ID NO:2);
(b) the polypeptide shown in FIG. 2 (SEQ ID NO:2); with a C-terminal truncation;
(c) the polypeptide shown in FIG. 2 (SEQ ID NO:2); with a N-terminal truncation;
(d) the polypeptide shown in FIG. 2 (SEQ ID NO:2), with an alternative BIR domain at residues 160-179;
(e) the polypeptide shown in FIG. 2 (SEQ ID NO:2) with an amino acid substituion for Serine 150; and
(f) the polypeptide shown in FIG. 2 (SEQ ID NO:2); with an amino acid substituion for Histadine 167.
12. An isolated polypeptide comprising the ML-IAP chimera amino acid sequence shown in FIG. 2 (SEQ ID NO:2).
13. A chimeric polypeptide comprising the polypeptide of claim 10 or 11 fused to a heterologous polypeptide.
14. A method of screening for a compound that modulates the caspase inhibition of an IAP polypeptide comprising:
(a) contacting a crystal structure of the molecule found in FIG. 2 (SEQ ID NO:2) in spacegroup P41212, with unit cell dimentions of about 87\xd787\xd774 \u212b, with a known IAP inhibitor;
(b) soaking a potential inhibitor with the complex found in (a); and
(c) determining if the potential inhibitor displaces the known IAP inhibitor.
15. A method of screening for a compound that modulates the caspase inhibition of an IAP polypeptide comprising;
b. co-crystallizing the IAP polypeptide with a compound;
c. resolving the structure of the bound molecules by x-ray crystallography;
d. using the data generated from step (b) to make a computer model of the bound molecules;
e. applying an iterative process using the computer generated model to identify potential agonists or antagonists of the IAP polypeptide;
f. synthesizing the agonist or antagonist;
g. contacting the agonist or antagonist with the IAP polypeptide to determine its ability to interact with said IAP polypeptide.
16. A method of screening for a compound that modulates the caspase inhibition of an ML-IAP chimera comprising;
h. contacting a caspase polypeptide and an IAP polypeptide in the presence of said compound;
i. detecting the amount of caspase activity when compared to the amount of caspase activity without the presence of the modulating compound.
17. The method of claim 16, wherein said caspase is selected from the group consisting of caspase-3, and caspase-9.
18. The method of claim 16, wherein caspase activity is detected using an antibody.
19. The method of claim 16, wherein caspase activity is detected by cleavage of a protein substrate.
20. The method of claim 16, wherein the IAP polypeptide is shown in FIG. 2 (SEQ ID NO:2).
21. A method of screening antagonists of IAP polypeptides comprising:
(a) transfecting cells with the IAP chimera found in FIG. 1 (SEQ ID NO:1);
(b) contacting the transfected cells with a potential IAP antagonist;
(c) determining whether said antagonist increases apoptosis in cells expressing an IAP relative to antagonist untreated cells.
22. A method of increasing the survival of a cell, comprising contacting the cell with a compound that alters the caspase inhibitory activity of an ML-IAP chimera polypeptide in the cells.
23. A method of identifying a compound that alters the specific binding of a caspase and an ML-IAP chimera comprising:
(a) contacting the caspase and the ML-IAP chimera under conditions that allow the caspase and the ML-IAP chimera to specifically bind, with a compound potentially being able to alter the association of the caspase and the ML-IAP chimera; and
(b) detecting the altered association of the caspase and the ML-IAP chimera, thus identifying the compound that alters the association of the caspase and the ML-IAP chimera.
24. The method of claim 23, wherein the contacting is performed in vitro.
25. The method of claim 23, wherein the contacting occurs in a cell.
26. The method of claim 23, wherein the caspase is selected from the group consisting of caspase 3 and caspase 9.
27. The method of claim 23 comprising contacting a ML-IAP chimera and a compound wherein the binding of the molecules can be measured by fluorescence polarization.