Author: claimsbot

1. A semiconductor device comprising:
a sense amplifier;
a memory array having a plurality of DRAM memory cells, a plurality of word lines and a plurality of data lines;
a plurality of first drivers coupled to a plurality of first word lines, the plurality of first word lines being included in said plurality of word lines;
a plurality of second drivers coupled to a plurality of second word lines, the plurality of second word lines being included in said plurality of word lines;
a first line coupled to the plurality of first drivers and arranged to supply a first potential to the plurality of first drivers; and
a second line coupled to the plurality of second drivers and arranged to supply the first potential to the plurality of second drivers;
wherein said plurality of first drivers are formed on a first side of a substantially rectangular area where said memory array is formed,
wherein said plurality of second drivers are formed on a second side of said substantially rectangular area,
wherein said plurality of word lines cross a pair of data lines, said pair of data lines being two of said plurality of data lines which are coupled to said sense amplifier,
wherein first and second DRAM memory cells are located between said pair of data lines and coupled to said plurality of first word lines, the first and second DRAM memory cells being included in said plurality of DRAM memory cells,
wherein said first DRAM memory cells are coupled to one of said pair of data lines,
wherein said second DRAM memory cells are coupled to the other of said pair of data lines, and
wherein each of the plurality of memory cells is coupled to a corresponding one of the plurality of data lines via an oval contact.
2. The semiconductor device according to claim 1,
wherein the pair of data lines work as a pair for outputting information to said sense amplifier.
3. The semiconductor device according to claim 1,
wherein each of said plurality of DRAM memory cells has a transistor and a capacitor.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for a mobile station in communication with a wireless telecommunications network, said method comprising:
said mobile station receiving at least one frequency listing from a base station in said wireless telecommunications network, said at least one frequency listing identifying a plurality of carrier frequencies;
said mobile station selecting a first carrier frequency in said plurality of carrier frequencies, for receiving messages from said base station; and
said mobile station selecting a second carrier frequency in said plurality of carrier frequencies, for transmitting messages to said base station, wherein said mobile station selects said second carrier frequency independently of said first carrier frequency.
2. The method of claim 1, further comprising:
said mobile station monitoring a paging channel at said first carrier frequency for messages from said base station.
3. The method of claim 1, further comprising:
said mobile station using an access channel at said second carrier frequency for transmitting a message to said base station.
4. The method of claim 1, wherein said mobile station selecting a first carrier frequency in said plurality of carrier frequencies comprises:
said mobile station selecting said first carrier frequency based on an identifier of said mobile station.
5. The method of claim 4, wherein said mobile station selecting said first carrier frequency based on an identifier of said mobile station comprises:
said mobile station applying a hashing algorithm to said identifier.
6. The method of claim 4, wherein said mobile station selecting a second carrier frequency in said plurality of carrier frequencies comprises:
said mobile station selecting said second carrier frequency based on said identifier of said mobile station.
7. The method of claim 6, wherein said mobile station selecting said second carrier frequency based on an identifier of said mobile station comprises:
said mobile station applying a hashing algorithm to said identifier.
8. The method of claim 4, wherein said identifier of said mobile station is a Mobile Directory Dumber (MDN), Mobile Identification Number (MIN), International Mobile Subscriber Identity (IMSI), or Electronic Serial Number (ESN).
9. The method of claim 1, wherein said at least one frequency listing identifies a first set of carrier frequencies in said plurality of carrier frequencies as being downlink carrier frequencies and identifies a second set of carrier frequencies in said plurality of carrier frequencies as being uplink carrier frequencies.
10. The method of claim 9, wherein said mobile station selecting a first carrier frequency in said plurality of carrier frequencies comprises said mobile station selecting said first carrier frequency from among said first set of carrier frequencies, and wherein said mobile station selecting a second carrier frequency in said plurality of carrier frequencies comprises said mobile station selecting said second carrier frequency from among said second set of carrier frequencies.
11. The method of claim 9, wherein said at least one frequency listing comprises:
a first frequency listing identifying said first set of carrier frequencies; and
a second frequency listing identifying said second set of carrier frequencies.
12. A method for a mobile station operating in a sector of a wireless telecommunications network, said method comprising:
before said mobile station begins transmitting to said sector, said mobile station receiving a frequency listing that identifies M downlink carrier frequencies and N uplink carrier frequencies available in said sector;
said mobile station selecting a downlink frequency from among said M available downlink frequencies; and
said mobile station selecting an uplink frequency from among said N available uplink frequencies, independently of said downlink frequency, wherein M and N are integers greater than one.
13. The method of claim 12, further comprising:
said mobile station using said downlink frequency to receive at least one communication from said sector.
14. The method of claim 12, further comprising:
said mobile station using said uplink frequency to transmit at least one communication to said sector.
15. The method of claim 12, wherein said mobile station selecting a downlink frequency from among said M available downlink frequencies comprises:
said mobile station using a downlink hashing algorithm to map an identifier of said mobile station to one of said M available downlink frequencies.
16. The method of claim 15, wherein said mobile station selecting an uplink frequency from among said N available uplink frequencies, independently of said downlink frequency, comprises:
said mobile station using an uplink hashing algorithm to map said identifier of said mobile station to one of said N available uplink frequencies.
17. The method of claim 12, wherein M is greater than N.
18. A mobile station, comprising:
a transceiver for transmitting and receiving communications; and
a controller, said controller being configured to:
(a) receive at least one frequency listing via said transceiver, said at least one frequency listing identifying a plurality of carrier frequencies;
(b) select a first carrier frequency in said plurality of carrier frequencies for receiving communications via said transceiver; and
(c) select a second carrier frequency in said plurality of carrier frequencies for transmitting communications via said transceiver, wherein said second carrier frequency is selected independently of said first carrier frequency.
19. The mobile station of claim 18, wherein said controller is configured to use at least one hashing algorithm to select said first and said second carrier frequencies based on an identifier of said mobile station.

1. A method of forming a diode, said method comprising: forming adjacent well regions in a semiconductor layer, said adjacent well regions comprising: a first well region, having a first type conductivity; and a second well region, having a second type conductivity different from said first type conductivity, said second well region being positioned laterally adjacent to and abutting said first well region at an interface; and forming contact regions and at least one isolation region at a top surface of said semiconductor layer such that a first contact region, having said first type conductivity, is positioned within said first well region, such that a second contact region, having said second type conductivity, traverses said interface with a first end extending laterally into said first well region and a second end extending laterally into said second well region, said first end and said second end having different lengths, and such that an isolation region is positioned within said first well region between said first contact region and said first end of said second contact region.
2. The method of claim 1, said forming of said contact regions and said at least one isolation region comprising selectively adjusting a length of said first end of said second contact region from said interface to said isolation region so as to selectively adjust a reverse-bias breakdown voltage of said diode.
3. The method of claim 1, further comprising forming a conductive field plate on said top surface of said semiconductor layer to reduce a reverse-bias breakdown voltage of said diode, said conductive field plate having a first sidewall aligned above said isolation region and a second sidewall opposite said first sidewall aligned above said first end of said second contact region.
4. The method of claim 3, said forming of said conductive field plate comprising forming any of a metal field plate and a doped polysilicon field plate.
5. The method of claim 1, said forming of said contact regions and said at least one isolation region further being performed such that an additional contact region, having said second type conductivity, is positioned within said second well region; and an additional isolation region is positioned laterally between and abutting said additional contact region and said second end of said second contact region.
6. The method of claim 1, said forming of said contact regions and said at least one isolation region further being performed such that said second well region laterally surrounds said first well region, said isolation region laterally surrounds said first contact region, and said second contact region laterally surrounds said isolation region.
7. A method of forming a diode, said method comprising:
forming adjacent well regions in a semiconductor layer, said adjacent well regions comprising:
a first well region, having a first type conductivity, in a semiconductor layer;
a second well region, having a second type conductivity different from said first type conductivity, in said semiconductor layer and positioned laterally adjacent to and abutting said first well region at an interface;

forming contact regions and an isolation region,
said contact regions comprising:
a first contact region, having said first type conductivity, at a top surface of said semiconductor layer within said first well region; and
a second contact region, having said second type conductivity, at said top surface of said semiconductor layer traversing said interface such that a first end of said second contact region extends laterally into said first well region and a second end of said second contact region extends laterally into said second well region; and

said isolation region at said top surface of said semiconductor layer within said first well region, and positioned laterally between said first contact region and said first end of said second contact region; and

forming a conductive field plate on said isolation region within said first well region and further extending laterally onto said first end of said second contact region within said first well region such that said conductive field plate has a first sidewall aligned above said isolation region and a second sidewall opposite said first sidewall, aligned above said first end of said second contact region within said first well region and offset from said interface so that said conductive field plate covers less than all of said first end of said second contact region within said first well region.
8. The method of claim 7, said second contact region being formed such that said first end has a predetermined length from said interface to said isolation region and said conductive field plate being formed so as to cover less than all of said first end so that said diode has predetermined reverse-bias breakdown voltage.
9. The method of claim 7, said conductive field plate being formed as any one of a metal field plate and a doped polysilicon field plate.
10. The method of claim 7, further comprising:
forming an additional contact region, having said second type conductivity, at said top surface of said semiconductor layer within said second well region; and
forming an additional isolation region positioned laterally between and abutting said additional contact region and said second end of said second contact region.
11. The method of claim 7, said well regions, said contact regions and said isolation region being formed such that said second well region laterally surrounds said first well region, such that said isolation region laterally surrounds said first contact region, and such that said second contact region laterally surrounds said isolation region.
12. A method of forming a diode, said method comprising:
forming adjacent well regions in a semiconductor layer, said adjacent well regions comprising: a first well region, having a first type conductivity; and a second well region, having a second type conductivity different from said first type conductivity, said second well region being positioned laterally adjacent to and abutting said first well region at an interface; and
forming contact regions and at least one isolation region at a top surface of said semiconductor layer such that a first contact region, having said first type conductivity, is positioned within said first well region, such that a second contact region, having said second type conductivity, traverses said interface with a first end extending laterally into said first well region and a second end extending laterally into said second well region, and such that an isolation region is positioned within said first well region between said first contact region and said first end of said second contact region,
said forming of said contact regions and said at least one isolation region comprising selectively adjusting a length of said first end of said second contact region from said interface to said isolation region so as to selectively adjust a reverse-bias breakdown voltage of said diode.
13. The method of claim 12, said first end and said second end having different lengths.
14. The method of claim 12, further comprising forming a conductive field plate on said top surface of said semiconductor layer further adjust said reverse-bias breakdown voltage of said diode, said conductive field plate having a first sidewall aligned above said isolation region and a second sidewall opposite said first sidewall aligned above said first end of said second contact region.
15. The method of claim 14, said forming of said conductive field plate comprising forming any of a metal field plate and a doped polysilicon field plate.
16. The method of claim 12, said forming of said contact regions and said at least one isolation region further being performed such that an additional contact region, having said second type conductivity, is positioned within said second well region; and an additional isolation region is positioned laterally between and abutting said additional contact region and said second end of said second contact region.
17. The method of claim 12, said forming of said contact regions and said at least one isolation region further being performed such that said second well region laterally surrounds said first well region, said isolation region laterally surrounds said first contact region, and said second contact region laterally surrounds said isolation region.
18. The method of claim 12, said semiconductor layer being above an isolation layer on a semiconductor substrate.
19. The method of claim 12, further comprising:
providing a bulk semiconductor substrate; and,
forming a buried well region within said semiconductor substrate so as to form said semiconductor layer in an upper portion of said semiconductor substrate and isolated from a lower portion of said semiconductor substrate by said buried well region,
said first well region and said second well region being formed in said semiconductor layer above said buried well region.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method, comprising:
providing a composition comprising a substance selected from the group consisting of tumor cell debris, tumor lysate, tumor antigens and combinations thereof, wherein the substance is generated by a method comprising exposing tumor cells to microwave radiation to induce cell death; and
administering the composition to elicit a specific immune response in a mammal in need thereof.
2. The method of claim 1, wherein the substance is tumor cell debris.
3. The method of claim 1, further comprising administering a composition comprising at least one toll-like receptor (TLR) ligand.
4. The method of claim 3, wherein the at least one TLR ligand is selected from the group consisting of TLR2 ligand, TLR4 ligand, TLR9 ligand and combinations thereof.
5. The method of claim 3, wherein the at least one TLR ligand is selected from the group consisting of Pam3cys, PolyI:C, lipopolysaccharide (\u201cLPS\u201d), ST-FLA, Gardiquimod, CpG ODN, TLR12 Agonist: Pam3CSK4, TLR2 Agonist: HKLM, TLR3 Agonist: Poly(I:C), TLR4 Agonist: LPS E. coli, TLR5 Agonist: Flagellin S. typhimurium, TLR62 Agonist: FSL1, TLR7 Agonist: Imiquimod, TLR8 Agonist: ssRNA40, TLR9 Agonist: ODN, and combinations thereof.
6. The method of claim 1, further comprising administering a composition comprising toll-like receptor (TLR) ligands Pam3cys, lipopolysaccharide (\u201cLPS\u201d) and CpG ODN.
7. The method of claim 1, wherein the composition further comprises at least one toll-like receptor (TLR) ligand.
8. The method of claim 7, wherein the at least one TLR ligand is selected from the group consisting of TLR2 ligand, TLR4 ligand, TLR9 ligand and combinations thereof.
9. The method of claim 7, wherein the at least one TLR ligand is selected from the group consisting of Pam3cys, PolyI:C, lipopolysaccharide (\u201cLPS\u201d), ST-FLA, Gardiquimod, CpG ODN, TLR12 Agonist: Pam3CSK4, TLR2 Agonist: HKLM, TLR3 Agonist: Poly(I:C), TLR4 Agonist: LPS E. coli, TLR5 Agonist: Flagellin S. typhimurium, TLR62 Agonist: FSL1, TLR7Agonist: Imiquimod, TLR8 Agonist: ssRNA40, TLR9 Agonist: ODN, and combinations thereof.
10. The method of claim 1, wherein the composition further comprises toll-like receptor (TLR) ligands Pam3cys, lipopolysaccharide (\u201cLPS\u201d) and CpG ODN.
11. The method of claim 1, wherein the tumor cell debris, andor tumor lysate, andor tumor antigens are from brain tumor cells.
12. The method of claim 11, wherein the brain tumor cells are from a type of brain tumor selected from the group consisting of glioma, glioblastomas, glioblastoma multiforme (GBM), oligodendroglioma, primitive neuroectodermal tumor, low, mid and high grade astrocytoma, ependymoma, oligodendroglioma, medulloblastoma, meningioma, pituitary carcinoma, neuroblastoma, craniopharyngioma and combinations thereof.
13. The method of claim 1, wherein the specific immune response reduces the likelihood of tumor recurrence, slows down the growth of the tumor, andor increases the survival time of the mammal.
14. A composition, comprising:
a quantity of a substance selected from the group consisting of tumor cell debris, tumor lysate, tumor antigens and combinations thereof, wherein the substance is generated by a method comprising exposing tumor cells to microwave radiation to induce cell death; and
a pharmaceutically acceptable carrier.
15. The composition of claim 14, wherein the substance is tumor cell debris.
16. The composition of claim 14, further comprising at least one toll-like receptor (TLR) ligand.
17. The composition of claim 16, wherein the at least one TLR ligand is selected from the group consisting of TLR2 ligand, TLR4 ligand, TLR9 ligand and combinations thereof.
18. The composition of claim 16, wherein the at least one TLR ligand is selected from the group consisting of Pam3cys, PolyI:C, lipopolysaccharide (\u201cLPS\u201d), ST-FLA, Gardiquimod, CpG ODN, TLR12 Agonist: Pam3CSK4, TLR2 Agonist: HKLM, TLR3 Agonist: Poly(I:C), TLR4 Agonist: LPS E. coli, TLR5 Agonist: Flagellin S. typhimurium, TLR62 Agonist: FSL1, TLR7 Agonist: Imiquimod, TLR8 Agonist: ssRNA40, TLR9 Agonist: ODN, and combinations thereof.
19. The composition of claim 14, further comprising toll-like receptor (TLR) ligands Pam3cys, LPS and CpG ODN.
20. The composition of claim 14, wherein the tumor cell debris, andor tumor lysate, andor tumor antigens are brain tumor cells.
21. The composition of claim 20, wherein the brain tumor cells are from a type of brain tumor selected from the group consisting of glioma, glioblastomas, glioblastoma multiforme (GBM), oligodendroglioma, primitive neuroectodermal tumor, low, mid and high grade astrocytoma, ependymoma, oligodendroglioma, medulloblastoma, meningioma, pituitary carcinoma, neuroblastoma, craniopharyngioma and combinations thereof.
22. A kit, comprising:
a pharmaceutically acceptable excipient adapted for preparing a composition comprising a quantity of a substance selected from the group consisting of tumor cell debris, tumor lysate, tumor antigens and combinations thereof, wherein the substance is generated by a method comprising exposing tumor cells to microwave radiation to induce cell death, for administration to a mammal in need of treatment to reduce the likelihood of tumor recurrence; and
instructions for using the pharmaceutically acceptable excipient to prepare the composition for administration to the mammal.
23. The kit of claim 22, further comprising the composition comprising the quantity of the substance selected from the group consisting of tumor cell debris, tumor lysate, tumor antigens and combinations thereof.
24. The kit of claim 22, further comprising at least one toll-like receptor (TLR) ligand.
25. The kit of claim 22 further comprising one or more items selected from the group consisting of microfuge tube to maintain cells for freeze-thaw lysate procedure, phosphate buffered saline for the cells, 0.9% saline buffer for the cells, sterile plastic disposable forceps to manipulate cells into a microfuge tube, sterile water, 21-28 m gauge needle, 2 ml syringe to dissociate cells and cellular debris, 5 ml syringe to dissociate cells and cellular debris, Bradford dye, spectrophotometer cuvette for protein measurements, quantity of bovine serum albumin (BSA) for standardizing protein concentrations, and 2 ml microfuge tube to store a lysate sample at a known concentration.
26. A method, comprising:
providing a microwave probe;
contacting the microwave probe to a tumor to ablate the tumor and generate tumor cell debris or using the microwave probe to deliver microwave radiation to the tumor to generate tumor cell debris to elicit a specific immune response in a mammal in need thereof.
27. The method of claim 26, further comprising administering a composition comprising at least one toll-like receptor (TLR) ligand.
28. The method of claim 27 wherein the at least one TLR ligand is selected from the group consisting of TLR2 ligand, TLR4 ligand, TLR9 ligand and combinations thereof.
29. The method of claim 27, wherein the at least one TLR ligand is selected from the group consisting of Pam3cys, PolyI:C, lipopolysaccharide (\u201cLPS\u201d), ST-FLA, Gardiquimod, CpG ODN, TLR12 Agonist: Pam3CSK4, TLR2 Agonist: HKLM, TLR3 Agonist: Poly(I:C), TLR4 Agonist: LPS E. coli, TLR5 Agonist: Flagellin S. typhimurium, TLR62 Agonist: FSL1, TLR7 Agonist: Imiquimod, TLR8 Agonist: ssRNA40, TLR9 Agonist: ODN, and combinations thereof.
30. The method of claim 26, further comprising administering a composition comprising toll-like receptor (TLR) ligands Pam3cys, lipopolysaccharide (\u201cLPS\u201d) and CpG ODN.
31. The method of claim 26 wherein the tumor is a brain tumor.
32. The method of claim 31, wherein the brain tumor is selected from the group consisting of glioma, glioblastomas, glioblastoma multiforme (GBM), oligodendroglioma, primitive neuroectodermal tumor, low, mid and high grade astrocytoma, ependymoma, oligodendroglioma, medulloblastoma, meningioma, pituitary carcinoma, neuroblastoma, craniopharyngioma and combinations thereof.
33. The method of claim 26, wherein the specific immune response reduces the likelihood of tumor recurrence, slows down the tumor growth, andor increases the survival time of the mammal.