1. A Raman amplifier comprising at least one microstructured fiber, and at least one pump laser, optically connected to one end of said microstructured fiber, said pump laser being adapted for emitting a pump radiation at a wavelength \u03bbp, said microstructured fiber comprising a silica-based core surrounded by a plurality of capillary voids extending in the axial direction of the fiber, said core comprising at least one dopant added to silica, said dopant being suitable for enhancing Raman effect.
2. The Raman amplifier according to claim 1, wherein said microstructured fiber has a maximum Raman gain coefficient gR in a wavelength region between 1460 nm and 1650 nm, an attenuation \u03b1p at said wavelength \u03bbp and an effective area Aeff at said wavelength \u03bbp, wherein said maximum Raman gain coefficient gR said attenuation \u03b1p and said effective area Aeff are such that (gRAeff)\u03b1p is greater than or equal to 5 1WdB.
3. The Raman amplifier according to claim 2, wherein said maximum Raman gain coefficient gR, said attenuation \u03b1p and said effective area Aeff are such that (gRAeff)\u03b1p is greater than or equal to 10 1WdB.
4. The Raman amplifier according to claim 1, wherein said dopant is chosen from a group comprising germanium, phosphorus and boron.
5. The Raman amplifier according to claim 4, wherein said dopant is germanium.
6. The Raman amplifier according to claim 5, wherein a concentration of germanium is higher than or equal to 8% mol.
7. The Raman amplifier according to claim 6, wherein said concentration is higher than or equal to 20% mol.
8. The Raman amplifier according to claim 1, wherein an effective area Aeff of said microstructured fiber is lower than or equal to 10 \u03bcm2 at said wavelength \u03bbp.
9. The Raman amplifier according to claim 8, wherein said effective area is lower than or equal to 7 \u03bcm2 at said wavelength \u03bbp.
10. The Raman amplifier according to claim 1, wherein an effective area Aeff of said microstructured fiber is higher than or equal to 3 \u03bcm2 at said wavelength \u03bbp.
11. The Raman amplifier according to claim 1, wherein an attenuation \u03b1p of said microstructured fiber is lower than or equal to 10 dBkm at said wavelength \u03bbp.
12. The Raman amplifier according to claim 11, wherein said attenuation \u03b1p is lower than or equal to 5 dBkm at said wavelength \u03bbp.
13. The Raman amplifier according to claim 1, wherein a dispersion of said microstructured fiber is higher than or equal to 40 psnmkm in absolute value at a wavelength of 1550 nm.
14. The Raman amplifier according to claim 13, wherein said dispersion is higher than or equal to 70 psnmkm in absolute value at a wavelength of 1550 nm.
15. The Raman amplifier according to claim 1, wherein said microstructured fiber is single mode for wavelengths greater than or equal to 1430 nm.
16. The Raman amplifier according to claim 1, wherein a diameter of said voids is between 0.3 and 4.0 \u03bcm.
17. The Raman amplifier according to claim 1, wherein a distance between said voids is lower than 4.0 \u03bcm.
18. The Raman amplifier according to claim 1, wherein a ratio between a diameter d of said voids and a distance \u039b between said voids is higher than 0.35.
19. The Raman amplifier according to claim 1, wherein a distance \u039b between said voids is between 1.85 \u03bcm and 2.15 \u03bcm, and a ratio d\u039b between the diameter d of said voids and said distance \u039b is between 0.4 and 0.6.
20. The Raman amplifier according to claim 1, wherein a distance \u039b between said voids is lower than 2.0 \u03bcm, and a ratio d\u039b between the diameter d of said voids and said distance \u039b is higher than 0.7.
21. The Raman amplifier according to claim 1, wherein a length of said microstructured fiber is lower than or equal to 2000 m.
22. The Raman amplifier according to claim 19, wherein the length of said microstructured fiber is lower than or equal to 1000 m.
23. The Raman amplifier according to claim 19, wherein the length of said microstructured fiber is lower than or equal to 500 m.
24. A microstructured fiber suitable for guiding an optical signal having a wavelength lying in a wavelength band between 1460 and 1650 nm, comprising a core surrounded by a plurality of capillary voids extending in the axial direction of the fiber, said core comprising silica and a dopant suitable for enhancing Raman effect, said fiber being further suitable for guiding a pump radiation having a wavelength \u03bbpshifted with respect to at least one wavelength of said wavelength band in a lower wavelength region according to the Raman shift of said core, said fiber having a maximum Raman gain coefficient gR in said wavelength band, and an attenuation \u03b1p and an effective area Aeff at said wavelength \u03bbp, wherein said maximum Raman gain coefficient gR, said attenuation \u03b1p and said effective area Aeff are such that (gRAeff)\u03b1p is greater than or equal to 5 1WdB.
25. The microstructured fiber according to claim 24, wherein said maximum Raman gain coefficient gR, said attenuation \u03b1p and said effective area Aeff are such that (gRAeff)\u03b1p is greater than or equal to 10 1WdB.
26. The microstructured fiber according to claim 24 wherein said dopant is chosen from a group comprising germanium, phosphorus and boron.
27. A microstructured fiber comprising a core surrounded by a plurality of capillary voids extending in the axial direction of the fiber, said core comprising silica and germanium, wherein a concentration of germanium in said core is higher than or equal to 8%.
28. The microstructured fiber according to claim 27, wherein said concentration of germanium is higher than or equal to 20%.
29. The microstructured fiber according to claim 24 or 27, wherein an effective area Aeff of said microstructured fiber is lower than or equal to 10 \u03bcm2 at said wavelength \u03bbp.
30. The microstructured fiber according to claim 29, wherein said effective area is lower than or equal to 7 \u03bcm2 at said wavelength \u03bbp.
31. The microstructured fiber according to claim 24 or 27, wherein an effective area Aeff of said microstructured fiber is higher than or equal to 3 \u03bcm2 at said wavelength \u03bbp.
32. The microstructured fiber according to claim 24 or 27, wherein an attenuation \u03b1p of said microstructured fiber is lower than or equal to 10 dBkm at said wavelength \u03bbp.
33. The microstructured fiber according to claim 32, wherein said attenuation \u03b1p is lower than or equal to 5 dBkm at said wavelength \u03b1p.
34. The microstructured fiber according to claim 24 or 27, wherein a dispersion of said microstructured fiber is higher than or equal to 40 psnmkm in absolute value at a wavelength of 1550 nm.
35. The microstructured fiber according to claim 34, wherein said dispersion is higher than or equal to 70 psnmkm in absolute value at a wavelength of 1550 nm.
36. The microstructured fiber according to claim 24 or 27, wherein said microstructured fiber is single mode for wavelengths greater than or equal to 1430 nm.
37. The microstructured fiber according to claim 24 or 27, wherein a diameter of said voids is between 0.3 and 4.0 \u03bcm.
38. The microstructured fiber according to claim 24 or 27, wherein a distance between said voids is lower than 4.0 \u03bcm.
39. The microstructured fiber according to claim 24 or 27, wherein a ratio between a diameter d is said voids and a distance \u039b between said voids is higher than 0.35.
40. The microstructured fiber according to claim 24 or 27, wherein a distance \u039b between said voids is between 1.85 \u03bcm and 2.15 \u03bcm, and a ratio d\u039b between the diameter d or said voids and said distance \u039b is comprised 0.4 and 0.6.
41. The microstructured fiber according to claim 24 or 27, wherein a distance \u039b between said voids is lower than 2.0 \u03bcm, and a ratio d\u039b between the diameter d of said voids and said distance \u039b is higher than 0.7.
42. An optical transmission system comprising a transmitting station, a receiving station and an optical line between said transmitting station and said receiving station, said optical line comprising at least one Raman amplifier comprising at least one microstructured fiber and at least one pump laser, optically connected to one end of said microstructured fiber, said pump laser being adapted for emitting a pump radiation at a wavelength \u03bbp, said microstructured fiber comprising a silica-based core surrounded by a plurality of capillary voids extending in the axial direction of the fiber, said core comprising at least one dopant added to silica, said dopant being suitable for enhancing Raman effect.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A process for sulfurization of workpiece in vacuum, including cleaning the surface of workpieces, loading the workpieces into vacuum chamber, vacuum pumping, heating the sulfur source for sublimating thereof, making the gaseous sulfur ionized in the presence of a high electrical field and sulfurizing the workpieces, removing the workpieces from the vacuum chamber, wherein after the workpieces being cleaned, putting them into the vacuum chamber that has a pressure-rising rate up to 103 Pah and a ultimate vacuum up to 0.1 Pa, vacuuming to 20 to 100 Pa; heating the workpieces placed on the cathode plate at 35 to 120 C. for 20 to 40 min while keeping a vacuity of 0.1 to 1 Pa for desorbing the substances adsorbed on the surface of the workpieces to make the surface activated; in a direct current electric field of 800 to 1000 V, while keeping the same temperature as above-mentioned ionizing the gaseous sulfur into positive sulfur ions and forming sulfur plasma; directly effecting sulfurization for 1 to 30 min; and finally charging a inert or reductive gas into the vacuum chamber to cool the workpieces and then removing the workpieces from the chamber.
2. Process according to claim 1, characterized in that the process further includes a step for coating molybdenum disulfide of nanometer grade.