Author: claimsbot

1. A cotton harvester drive structure for driving a cotton harvesting row unit at a speed dependent on ground speed and for varying the speed for different harvesting conditions, the drive structure comprising:
a variable speed row unit drive connected to the harvesting row unit and having a speed control input;
a ground speed sensor providing a speed signal dependent on row unit ground speed;
a drive controller connected to the speed control input and responsive to the speed signal for operating the row unit drive at a preselected speed ratio dependant on the row unit ground speed; and
wherein the drive controller includes a ratio adjustment input connected to a ratio adjusting device for varying the speed ratio from the preselected speed ratio in accordance with the harvesting conditions;
wherein the drive controller includes a groud speed versus unit spped curve and the speed curve is non-linear and adjustable in accordance with varying crop and field conditions; and
wherein the harvester has a maximum speed and the speed curve has a decreased slope near the maximum speed compared to the slope at havester speeds below the maximum speed.
2. The drive structure as set forth in claim 1 wherein the ratio adjusting device includes a harvested crop detector providing an indication of the picking efficiency of the row unit, and wherein the drive controller is responsive to the picking efficiency indication to vary the speed ratio to improve the picking efficiency of the row unit.
3. The drive structure as set forth in claim 1 wherein the ratio adjusting device includes an operator control for manually selecting the speed ratio.
4. The drive structure as- set forth in claim 1 wherein the ratio adjusting device includes a crop vision device sensing cotton on cotton plants.
5. (canceled)
6. (canceled)
7. The drive structure as set forth in claim 1 including a crop detector providing a crop condition signal, and wherein the controller is responsive to the crop condition signal to automatically adjust the speed curve in dependence on crop condition.
8. A cotton harvester drive structure for driving a cotton harvesting row unit at a speed dependent on ground speed and for varying the row unit speed relative to the ground speed for different harvesting conditions, the drive structure comprising:
an electronic controller;
a ground speed sensor connected to the controller for providing a harvester ground speed signal;
a row unit speed sensor connected to the controller for providing a row unit speed signal; and
wherein the controller is responsive to the ground speed signal and the row unit speed signal to provide a first row unit speed based on harvester ground speed and a preset ground speed versus unit speed curve; and
wherein the speed curve is non-linear and has an initial slope at first harvester speeds that is steeper than the slope at havester speeds above the first harvester speeds to provide a higher unit speed relative to ground speed ratio at low harvester speeds.
9. The drive structure as set forth in claim 8 wherein the controller includes a ratio adjustment input, the ratio adjustment varying the row unit speed from the first row unit speed.
10. The drive structure as set forth in claim 9 wherein the ratio adjustment input is connected to a crop sensor providing a signal indicative of the amount of cotton on cotton plants.
11. The drive structure as set forth in claim 10 wherein the crop sensor comprises a field vision device which determines the amount of unpicked cotton remaining on the plants that have passed through the row unit.
12. The drive structure as set forth in claim 8 wherein the controller reads row unit speed from the unit speed sensor, and including an electronic drive control (EDC) connected to the controller and to a variable speed transmission device to adjust unit speed to a calculated value determined from the ground speed versus unit speed curve.
13. The drive structure as set forth in claim 12 including a field vision device connected to the controller for determining the amount of unpicked cotton remaining on the plants, the controller responsive to the field vision device for adjusting the row unit speed relative to the harvester ground speed.
14. The drive structure as set forth in claim 12 wherein the variable speed device comprises one of the following:
a. a hydro motor;
b. a variable sheave;
c. a continuously variable transmission.
15. (canceled)
16. (canceled)
17. A cotton harvester drive structure for driving a cotton harvesting row unit at a speed dependent on ground speed and for varying the row unit speed relative to the ground speed for different harvesting conditions, the drive structure comprising:
an electronic controller:
a ground speed sensor connected to the controller for providing a harvester around speed signal:
a row unit speed sensor connected to the controller for providing a row unit speed signal; and
wherein the controller is responsive to the ground speed signal and the row unit speed signal to provide a first row unit speed based on harvester ground speed and a preset ground speed versus unit speed curve;
wherein the speed curve is non-linear; and
wherein the harvester has a maximum speed and the speed curve has a decreased slope near the maximum speed compared to the slope at harvester speeds below the maximum speed.
18. The drive structure as set forth in claim 17 wherein the speed curve is adjustable for varying crop and field conditions.
19. The drive structure as set forth in claim 8 wherein the row unit speed comprises cotton picker spindle drum and cotton picker spindle rotational speeds.
20. The drive structure as set forth in claim 19 wherein the spindle speed is adjustable relative to the drum speed.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A turbine blade, comprising:
a generally elongated blade having a leading edge, a trailing edge, and a tip at a first end;
a root coupled to the blade at an end generally opposite the first end for supporting the blade and for coupling the blade to a disc;
at least one cavity forming a cooling system in the turbine blade;
at least one outer wall defining the at least one cavity forming the cooling system;
a platform generally orthogonal to the generally elongated blade and proximate to the root;
at least one rib protruding from a bottom surface of the platform, extending at an oblique angle to the platform contacting the root; and
at least one platform cooling channel in the at least one rib providing a pathway from the at least one cavity forming a cooling system in the root of the turbine blade to an outer side surface of the platform, wherein the at least one platform cooling channel terminates at the outer side surface of the platform to provide impingement cooling to a platform side surface on a platform of an adjacent turbine blade.
2. The turbine blade of claim 1, wherein the at least one rib is positioned on an outer surface of the platform on a side of the platform extending proximate to a pressure side of the generally elongated blade.
3. The turbine blade of claim 1, wherein the at least one rib is positioned on an outer surface of the platform on a side of the platform extending proximate to a suction side of the generally elongated blade.
4. The turbine blade of claim 1, wherein the at least one platform cooling channel is positioned nonparallel relative to an outer surface of the platform and nonparallel relative to a longitudinal axis of the generally elongated blade.
5. The turbine blade of claim 1, wherein the at least one rib comprises a plurality of ribs protruding from the bottom surface of the platform in a generally parallel configuration.
6. The turbine blade of claim 5, wherein the plurality of ribs extend along the bottom surface of the platform only on a single side of the root.
7. The turbine blade of claim 1, wherein the at least one rib protruding from the bottom surface of the platform tapers from a first thickness at a tip of the rib to a second thickness at an intersection between the at least one rib and the root, wherein the second thickness proximate the root is larger than the first thickness.
8. A turbine blade, comprising:
a generally elongated blade having a leading edge, a trailing edge, and a tip at a first end;
a root coupled to the blade at an end generally opposite the first end for supporting the blade and for coupling the blade to a disc;
at least one cavity forming a cooling system in the turbine blade;
at least one outer wall defining the at least one cavity forming the cooling system;
a platform generally orthogonal to the generally elongated blade and proximate to the root;
at least one rib protruding from a bottom surface of the platform, extending at an oblique angle to the platform and contacting the root; and
at least one platform cooling channel in the at least one rib providing a pathway from the at least one cavity forming a cooling system in the root of the turbine blade to an outer side surface of the platform, wherein the at least one platform cooling channel terminates at the outer side surface of the platform to a provide impingement cooling to platform side surface on a platform of an adjacent turbine blade;
wherein the at least one platform cooling channel is positioned nonparallel relative to an outer surface of the platform and nonparallel relative to a longitudinal axis of the generally elongated blade.
9. The turbine blade of claim 8, wherein the at least one rib is positioned on an outer surface of the platform on a side of the platform extending proximate to a pressure side of the generally elongated blade.
10. The turbine blade of claim 8, wherein the at least one rib is positioned on an outer surface of the platform on a side of the platform extending proximate to a suction side of the generally elongated blade.
11. The turbine blade of claim 8, wherein the at least one rib comprises a plurality of ribs protruding from the bottom surface of the platform in a generally parallel configuration.
12. The turbine blade of claim 11, wherein the plurality of ribs extend along the bottom surface of the platform only on a single side of the root.
13. The turbine blade of claim 8, wherein the at least one rib protruding from the bottom surface of the platform tapers from a first thickness at a rip of the rib to a second thickness at an intersection between the at least one rib and the root, wherein the second thickness proximate the root is larger than the first thickness.

1. A method for controlling an airflow device arranged for supplying or exhausting cooling air for a rack enclosure, the method comprising the steps of:
disposing an opening between an area inside the rack enclosure and an area outside the rack enclosure;
measuring a first temperature, a second temperature and a third temperature at locations in thermal communication with said opening, where the measured first temperature is affected by airflow through said opening, the airflow resulting from a pressure differential across said opening;
determining a direction of airflow though said opening from said temperature measurement, and
controlling the airflow device in response to said direction determining step; wherein a shunt tube is disposed in the opening, the first temperature is measured at a location inside the shunt tube, the second temperature is measured at a location outside the enclosure, the third temperature is measured at a location inside the rack enclosure, and wherein the direction of airflow is determined from the first, second and third temperatures measured.
2. A method as in claim 1 wherein the second temperature is measured at one end of the shunt tube.
3. A method as in claim 1 wherein the rack enclosure further comprises an intake plenum and exhaust plenum, and the shunt tube is disposed between the intake and exhaust plenums.
4. A method as in claim 1 wherein the direction of airflow is determined by comparing an average of the second and third temperatures with the first temperature.
5. A method for controlling an airflow device arranged for supplying or exhausting cooling air for a rack enclosure, the method comprising the steps of:
disposing an opening between an area inside the rack enclosure and an area outside the rack enclosure;
measuring a first temperature and a second temperature at locations in thermal communication with said opening, where the measured first temperature is affected by airflow through said opening, the airflow resulting from a pressure differential across said opening;
determining a direction of airflow though said opening from said temperature measurement, and
controlling the airflow device in response to said direction determining step, wherein the step of determining a direction of airflow further comprises measuring a second temperature at a second location adjacent the opening and determining the direction of airflow by comparing the first and second temperatures measured, wherein the direction of airflow is determined to be a first direction when the first temperature is less than the second temperature, and the direction of airflow is determined to be a second direction when the second temperature is less than the first temperature.
6. A method as in claim 5 wherein the enclosure further encloses a data processing system having a corresponding second air mover for providing exhaust air from the data processing system.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of forming a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a single-phase crystalline state of ZnxIn2yOx+3y, wherein x and y are each independently in the range of about 1 to about 15;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
2. The method of claim 1, wherein depositing a channel includes:
vaporizing a precursor composition; and
depositing the vaporized precursor composition using a physical vapor deposition technique.
3. The method of claim 2, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
4. The method of claim 1, wherein depositing the channel includes depositing a precursor composition on the surface with an ink-jet deposition technique.
5. The method of claim 1, wherein depositing a channel includes:
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds and;
depositing the channel from the precursor composition.
6. The method of claim 1, including providing a substrate or substrate assembly; and
forming the semiconductor device on the substrate or substrate assembly.
7. A method of forming a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
8. A method of forming a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
depositing a channel contacting the drain electrode and the source electrode and including zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO, ZnxIn2yOx+3y, In2O3, and mixtures thereof;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
9. A method of manufacturing a semiconductor device, comprising:
providing a drain electrode;
providing a source electrode;
step for providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds;
step for depositing a channel including zinc-indium oxide from the precursor composition contacting the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
10. The method of claim 9, wherein the step for depositing a channel includes:
step for vaporizing the precursor composition to form vaporized precursor composition; and
depositing the vaporized precursor composition using a physical vapor deposition technique.
11. The method of claim 10, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
12. The method of claim 9, wherein the step for depositing the channel includes step for depositing the precursor composition with an ink-jet deposition technique.
13. A method of forming a channel, comprising:
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds; and
depositing the channel including zinc-indium oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
14. The method of claim 13, wherein depositing the channel includes
vaporizing the precursor composition to form vaporized precursor composition; and
depositing the vaporized precursor composition between the drain electrode and the source electrode using a physical vapor deposition technique.
15. The method of claim 14, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
16. A semiconductor device formed by steps, comprising:
providing a drain electrode;
providing a source electrode;
providing a precursor composition including one or more zinc precursor compounds and indium precursor compounds;
depositing a channel including zinc-indium oxide from the precursor composition to contact the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel.
17. The semiconductor device of claim 16, wherein depositing the channel includes:
vaporizing the precursor composition to form vaporized precursor composition; and
depositing the vaporized precursor composition using a physical vapor deposition technique.
18. The semiconductor device of claim 17, wherein the physical vapor deposition technique includes one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, and ion beam sputtering.
19. A method for operating a semiconductor device, comprising:
providing a semiconductor device that includes a drain electrode, a source electrode, a channel to electrically couple the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide, a gate electrode, and a gate dielectric positioned between the gate electrode and the channel; and
applying a voltage to the gate electrode to effect a flow of electrons through zinc-indium oxide of the channel.
20. The method of claim 19, wherein applying a voltage includes using the semiconductor device as a switch in a display device.
21. The method of claim 19, wherein applying a voltage includes conducting electrons through a channel of zinc-indium oxide in a linear region of operation.