1.-21. (canceled)
22. A system for determining a concentration of a substance of interest in a body fluid, the system comprising:
a sensor device adapted to be positioned in direct contact with a body fluid to be analysed, said sensor device defining an analysis volume, at least partly delimited towards the body fluid by a semi-permeable membrane allowing substances of interest from the body fluid to enter the analysis volume,
a light source adapted to transfer primary light to the sensor device,
wherein the sensor device comprises at least one substantially flat area constituting a first area and at least one substantially flat area constituting a second area, at least one area comprising an optically responsive element,
wherein groups of areas are provided, each group of areas forming a common level and the common levels having a predetermined spacing from each other to provide the said difference in distance over which light interacts with compounds and tissue and wherein the first group of areas is formed at a base level of the device and the second group of areas is formed by projections from the said base level to a top level.
23. The system according to claim 22, wherein at least one of the first or second substantially flat areas, or at least one member of the first and second group of areas, comprises an optically responsive element comprising any number and combination of a SERS, a photo detector and a reflective surface.
24. The system according to claim 22, further comprising first light guiding means arranged to guide primary light from the light source to the analysis volume.
25. The system according to claim 24, further comprising second light guiding means arranged to guide secondary light away from the analysis volume.
26. The system according to claim 22, wherein the sensor device forms part of a probe head adapted to be positioned invasively, a semi-permeable membrane being arranged in a wall part of the probe head.
27. The system according to claim 26, wherein at least one of the first and second light guiding means is positioned with an end face in contact with the internal of the probe head.
28. A device according to claim 22, wherein at least a part of at least one of said areas is covered by a permeable membrane forming an analysis volume.
29. A device according to claim 22, wherein the sensor device is positionedimplanted under the skin of an animal.
30. The device according to claim 29 wherein the animal is a human, the sensor device being positionedimplanted under the skin of a human being.
31. The device according to claim 29, wherein the light source and possibly first andor second light guiding means are external to the animalhuman body, all transmitted andor reflected light penetrating the skin of the animalhuman body.
32. The system according to claim 22, further comprising at least one laser for emitting primary light, said laser(s) being connected to the first light guiding means.
33. The system according to claim 22, further comprising detection means adapted to detect Raman scattered light, said detection means being connected to the second light guiding means.
34. The system according to claim 22, wherein the substance of interest is glucose.
35. The system according to claim 22, wherein the body fluid is blood.
36. The system according to claim 22, wherein the first and the second light guiding means comprise(s) an optical fibre.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A nonvolatile semiconductor memory device comprising:
a stacked body including a plurality of electrode layers and a plurality of insulating layers, which are alternately stacked, and diffusion suppressing layers each provided between each of the plurality of electrode layers and each of the plurality of insulating layers;
a memory film provided on a side wall of a hole penetrating the stacked body in a stacking direction; and
a channel body layer provided on the memory film,
each of the plurality of electrode layers being a first semiconductor layer containing a first impurity element,
the diffusion suppressing layer being a second semiconductor layer containing a second impurity element which is different from the first impurity element, and
the diffusion suppressing layer being a film having an effect of suppressing diffusion of the first impurity element.
2. The device according to claim 1, wherein a concentration of the first impurity element in a depth direction of the first semiconductor layer is relatively higher at the center of the first semiconductor layer between an upper face and a lower face of the first semiconductor layer than at the upper face and the lower face.
3. The device according to claim 1, wherein each of the plurality of electrode layers is a gate electrode facing the channel body layer via the memory film.
4. The device according to claim 1, wherein the first impurity element is a group XIII element or a group XV element.
5. The device according to claim 1, wherein the second impurity element is carbon.
6. The device according to claim 1, wherein a principal ingredient of the first semiconductor layer and a principal ingredient of the second semiconductor layer are silicon.
7. The device according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are made of polycrystalline silicon.
8. The device according to claim 1, wherein the diffusion suppressing layer does not intervene between the memory film provided on the side wall of the hole and the electrode layer.
9. A nonvolatile semiconductor memory device comprising:
a stacked body including a plurality of electrode layers and a plurality of insulating layers, which are alternately stacked, and diffusion suppressing layers each provided between each of the plurality of electrode layers and each of the plurality of insulating layers; and
a memory film provided on a side wall of a hole penetrating the stacked body in a stacking direction,
each of the plurality of electrode layers being a first semiconductor layer containing a first impurity element,
the diffusion suppressing layer being a second semiconductor layer containing a second impurity element which is different from the first impurity element, and
the diffusion suppressing layer being a film having an effect of suppressing diffusion of the first impurity element.
10. The device according to claim 9, wherein a concentration of the first impurity element in a depth direction of the first semiconductor layer is relatively higher at the center of the first semiconductor layer between an upper face and a lower face of the first semiconductor layer than at the upper face and the lower face.
11. The device according to claim 9, wherein each of the plurality of electrode layers is a gate electrode facing a channel body layer via the memory film.
12. The device according to claim 9, wherein the first impurity element is a group XIII element or a group XV element.
13. The device according to claim 9, wherein the second impurity element is carbon.
14. The device according to claim 9, wherein a principal ingredient of the first semiconductor layer and a principal ingredient of the second semiconductor layer are silicon.
15. The device according to claim 9, wherein the first semiconductor layer and the second semiconductor layer are made of polycrystalline silicon.
16. The device according to claim 9, wherein the diffusion suppressing layer does not intervene between the memory film provided on the side wall of the hole and the electrode layer.