1. A hologram recording medium having a substrate and a hologram recording layer into or from which information is recorded or reproduced by a hologram, characterized in that:
a concavo-convex pattern is formed inside the hologram recording medium; and
the concavo-convex pattern has a reflection layer that transmits hologram recordingreproducing light and reflects light having a longer wavelength than the hologram recordingreproducing light.
2. The hologram recording medium according to claim 1, wherein:
the concavo-convex pattern is formed at a position in a range of 0.55 mm to 0.65 mm both inclusive or a position in a range of 1.1 mm to 1.3 mm both inclusive from a surface of one side of the hologram recording medium.
3. The hologram recording medium according to claim 1, wherein:
the hologram recording layer is held between two substrates, and at least one of the substrates contains a material that absorbs light having a shorter wavelength than the hologram recordingreproducing light.
4. The hologram recording medium according to claim 1, wherein:
the hologram recording medium has an approximate symmetric structure in a thickness direction about the hologram recording layer.
5. A hologram recording medium having a substrate and a hologram recording layer into or from which information is recorded or reproduced by a hologram, characterized in that:
a concavo-convex pattern detected by light having a longer wavelength than hologram recordingreproducing light is formed on a surface andor in an inside of the hologram recording medium; and
a pitch of the concavo-convex pattern is smaller than a distance over which the hologram recording medium andor an optical system is moved to an adjacent hologram information page on a medium surface of the hologram recording medium during recording or reproduction of the hologram.
6. A hologram recording medium having a substrate and a hologram recording layer into or from which information is recorded or reproduced by a hologram, characterized in that:
the hologram recording layer has a hologram fixing portion in an inside thereof that transmits hologram recordingreproducing light and suppresses a change in shape of the hologram recording layer.
7. The hologram recording medium according to claim 6, wherein:
the hologram fixing portion has a layer structure.
8. The hologram recording medium according to claim 6, wherein:
the hologram recording layer is held between two opposing substrates.
9. The hologram recording medium according to claim 8, wherein:
the hologram fixing portion has a layer structure, and the hologram recording medium has an approximate symmetric structure in a thickness direction about the hologram fixing portion.
10. The hologram recording medium according to claim 6, wherein:
the hologram fixing portion is made of at least one kind selected from the group of a resin material, a glass material, and hologram media.
11. The hologram recording medium according to claim 6, wherein:
a concavo-convex pattern is formed inside the hologram recording medium, and the concavo-convex pattern has a reflection layer that transmits the hologram recordingreproducing light and reflects light having a longer wavelength than the hologram recordingreproducing light.
12. The hologram recording medium according to claim 11, wherein:
the concavo-convex pattern is formed inside the substrate.
13. The hologram recording medium according to claim 11, wherein:
the hologram fixing portion has a layer structure and the concavo-convex pattern is formed inside the hologram fixing portion.
14. The hologram recording medium according to claim 11, wherein:
the concavo-convex pattern is formed at a position in a range of 0.55 mm to 0.65 mm both inclusive or a position in a range of 1.1 mm to 1.3 mm both inclusive from a surface of one side of the hologram recording medium.
15. The hologram recording medium according to claim 11, wherein:
position information and contents information are recorded in the concavo-convex pattern.
16. The hologram recording medium according to claim 11, wherein:
a pitch of the concavo-convex pattern is smaller than a distance over which the hologram recording medium andor an optical system is moved to an adjacent hologram information page on a medium surface of the hologram recording medium during recording or reproduction of the hologram.
17. The hologram recording medium according to claim 6, wherein:
the substrate contains a material that absorbs light having a shorter wavelength than the hologram recordingreproducing light.
18. A hologram recording medium having a substrate and a hologram recording layer into or from which information is recorded or reproduced by a hologram, characterized in that:
a concavo-convex pattern detected by light having a longer wavelength than hologram recordingreproducing light is formed inside the hologram recording medium; and
position information and contents information are recorded in the concavo-convex pattern.
19. A hologram recordingreproduction device that records or reproduces information by a hologram into or from a hologram recording medium having a concavo-convex pattern in an inside thereof, characterized by comprising:
a first light source that emits hologram recordingreproducing light;
a second light source that emits position detecting light having a longer wavelength than the hologram recordingreproducing light; and
a detection portion that reproduces position information and contents information recorded in the concavo-convex pattern by detecting reflected light of the position detecting light emitted from the second light source and collected on the concavo-convex pattern.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A temperature detection method of a semiconductor device wherein temperature of the semiconductor device used for a power inverting portion of a power conversion apparatus is detected by a temperature detection device placed on a circuit board to which a terminal for a junction of the semiconductor device is connected.
2. A temperature detection method of a semiconductor device wherein temperature of a semiconductor device used for a power inverting portion of a power conversion apparatus is detected by a temperature detection device placed in proximity to a terminal for a junction of the semiconductor device.
3. The temperature detection method of a semiconductor device according to claim 2, wherein a distance between the temperature detection device and the terminal of the semiconductor device is within 10 mm.
4. The temperature detection method of a semiconductor device according to claim 2, wherein a distance between the temperature detection device and the terminal of the semiconductor device is within 3 mm.
5. The temperature detection method of a semiconductor device according to claim 2, wherein the temperature detection device is placed in close proximity to the terminal of the semiconductor device.
6. The temperature detection method of a semiconductor device according to claim 2, wherein the temperature detection device is placed in close proximity to a circuit pattern of a circuit board to which the terminal of the semiconductor device is connected.
7. The temperature detection method of a semiconductor device according to claim 1 or 2, wherein the terminal is one of an emitter terminal and a collector terminal of the semiconductor device.
8. The temperature detection method of a semiconductor device according to claim 1 or 2, wherein there are a plurality of the semiconductor devices and the temperature detection device is placed at one of the emitter terminal and collector terminal of the semiconductor device of which temperature increases in the plurality of the semiconductor devices.
9. A power conversion apparatus for detecting temperature of a semiconductor device used for a power inverting portion, wherein temperature of the semiconductor device is detected by a temperature detection device placed on a circuit board to which a terminal for a junction of the semiconductor device is connected.
10. A power conversion apparatus including:
a power rectifying portion for converting AC power to DC power;
a smoothing portion for smoothing output of the power rectifying portion;
a power inverting portion for converting the output of the smoothing portion to the AC power; and
a control portion for controlling the power inverting portion, and
detecting temperature of a semiconductor device used for the power inverting portion, wherein temperature of the semiconductor device is detected by a temperature detection device placed in the proximity to a terminal for a junction of the semiconductor device.
11. The power conversion apparatus according to claim 10, wherein a distance between the temperature detection device and the terminal of the semiconductor device is within 10 mm.
12. The power conversion apparatus according to claim 10, wherein the distance between the temperature detection device and the terminal of the semiconductor device is within 3 mm.
13. The power conversion apparatus according to claim 10, wherein the temperature detection device is placed in close proximity to the terminal of the semiconductor device.
14. The power conversion apparatus according to claim 10, wherein the temperature detection device is placed in close proximity to a circuit pattern of a circuit board to which the terminal of the semiconductor device is connected.
15. The power conversion apparatus according to claim 10, wherein the terminal is one of an emitter terminal and a collector terminal of the semiconductor device.
16. The power conversion apparatus according to claim 10, wherein there are a plurality of the semiconductor devices and the temperature detection device is placed at one of the emitter terminal and collector terminal of the semiconductor device of which temperature increases in the plurality of the semiconductor devices.