Author: claimsbot

1. A control apparatus for an engine that introduces purge gas containing fuel gas evaporated from a fuel tank into an intake system, comprising:
an air-fuel ratio calculation unit that calculates an air-fuel ratio (AF) of the engine;
a purge rate calculation unit that calculates a purge rate (RPRG) corresponding to an introduction rate of the purge gas;
a concentration calculation unit that calculates a concentration (KAF\u2014PRG) of the purge gas based on the air-fuel ratio (AF) calculated by the air-fuel ratio calculation unit and the purge rate (RPRG) calculated by the purge rate calculation unit; and
a decision unit that permits or inhibits the concentration calculation unit (4) to calculate the concentration (KAF\u2014PRG) based on the purge rate (RPRG) calculated by the purge rate calculation unit.
2. The control apparatus according to claim 1, wherein
the decision unit allows the concentration calculation unit to update a calculation value of the concentration (KAF\u2014PRG) to the latest value when the purge rate (RPRG) is equal to or higher than a criterion rate (RTH); and
the decision unit makes the concentration calculation unit maintain the last value of the concentration (KAF\u2014PRG) when the purge rate (RPRG) is lower than the criterion rate (RTH).
3. The control apparatus according to claim 1, further comprising:
an air amount calculation unit that calculates an air amount (EC) to be introduced into a cylinder of the engine; and
an inhibition period calculation unit that calculates a period for which the calculation of the concentration (KAF\u2014PRG) by the concentration calculation unit is inhibited based on a history of the air amount (EC) calculated by the air amount calculation unit.
4. The control apparatus according to claim 2, further comprising:
an air amount calculation unit that calculates an air amount (EC) to be introduced into a cylinder of the engine; and
an inhibition period calculation unit that calculates a period for which the calculation of the concentration (KAF\u2014PRG) by the concentration calculation unit is inhibited based on a history of the air amount (EC) calculated by the air amount calculation unit.
5. The control apparatus according to claim 1, wherein
the decision unit permits or inhibits the calculation of the concentration (KAF\u2014PRG) to the concentration calculation unit based on a fuel amount correction coefficient (KFB\u2014PRG) correlative to a difference between the air-fuel ratio (AF) calculated by the air-fuel ratio calculation unit and a target air-fuel ratio.
6. The control apparatus according to claim 2, wherein
the decision unit permits or inhibits the calculation of the concentration (KAF\u2014PRG) to the concentration calculation unit based on a fuel amount correction coefficient (KFB\u2014PRG) correlative to a difference between the air-fuel ratio (AF) calculated by the air-fuel ratio calculation unit and a target air-fuel ratio.
7. The control apparatus according to claim 3, wherein
the decision unit permits or inhibits the calculation of the concentration (KAF\u2014PRG) to the concentration calculation unit based on a fuel amount correction coefficient (KFB\u2014PRG) correlative to a difference between the air-fuel ratio (AF) calculated by the air-fuel ratio calculation unit and a target air-fuel ratio.
8. The control apparatus according to claim 4, wherein
the decision unit permits or inhibits the calculation of the concentration (KAF\u2014PRG) to the concentration calculation unit based on a fuel amount correction coefficient (KFB\u2014PRG) correlative to a difference between the air-fuel ratio (AF) calculated by the air-fuel ratio calculation unit and a target air-fuel ratio.
9. The control apparatus according to claim 5, wherein
the decision unit
inhibits the calculation of the concentration (KAF\u2014PRG) in a driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is equal to or greater than a criterion amount, and
permits the calculation of the concentration (KAF\u2014PRG) in another driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is smaller than the criterion amount.
10. The control apparatus according to claim 6, wherein
the decision unit
inhibits the calculation of the concentration (KAF\u2014PRG) in a driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is equal to or greater than a criterion amount, and
permits the calculation of the concentration (KAF\u2014PRG) in another driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is smaller than the criterion amount.
11. The control apparatus according to claim 7, wherein
the decision unit
inhibits the calculation of the concentration (KAF\u2014PRG) in a driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is equal to or greater than a criterion amount, and
permits the calculation of the concentration (KAF\u2014PRG) in another driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is smaller than the criterion amount.
12. The control apparatus according to claim 8, wherein
the decision unit
inhibits the calculation of the concentration (KAF\u2014PRG) in a driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is equal to or greater than a criterion amount, and
permits the calculation of the concentration (KAF\u2014PRG) in another driving state in which the variation amount of the fuel amount correction coefficient (KFB\u2014PRG) is smaller than the criterion amount.
13. The control apparatus according to claim 1, wherein
the decision unit
inhibits the calculation of the concentration (KAF\u2014PRG) when the engine is accelerated or decelerated suddenly, and
permits the calculation of the concentration (KAF\u2014PRG) except a case in which the engine is accelerated or decelerated suddenly.
14. The control apparatus according to claim 1, wherein
the decision unit
inhibits the calculation of the concentration (KAF\u2014PRG) when a load acting on the engine is equal to or lower than a criterion amount, and
permits the calculation of the concentration (KAF\u2014PRG) when the load is higher than the criterion amount.
15. The control apparatus according to claim 1, wherein
the decision unit
permits the calculation of the concentration (KAF\u2014PRG) when feedback injection control is being carried out, and
inhibits the calculation of the concentration (KAF\u2014PRG) when open loop injection control is being carried out.
16. The control apparatus according to claim 1, wherein
the decision unit changes a condition for permitting or inhibiting the calculation of the concentration (KAF\u2014PRG) in response to the air-fuel ratio (AF).

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An x-ray tube, comprising:
an outer housing containing a coolant;
an evacuated enclosure disposed in the outer housing so as to be at least in partial fluid communication with the coolant, the evacuated enclosure containing an electron source and an anode positioned to receive electrons produced by the electron source;
an expansion bladder contained within the outer housing, the expansion bladder defining an interior volume;
a port defined in the outer housing and configured to provide atmospheric pressure access to the interior volume of the expansion bladder via an air passageway; and
wherein the port is positioned within a region of the outer housing that is substantially x-ray transmissive.
2. The x-ray tube as defined in claim 1, further comprising means for substantially preventing coolant contained within the housing from escaping through the port.
3. The x-ray tube as defined in claim 2, wherein the means for substantially preventing allows the transmission of air, gases, and vapors.
4. The x-ray tube as defined in claim 2, wherein the means for substantially preventing comprises a semi-permeable membrane.
5. The x-ray tube as defined in claim 4, wherein the semi-permeable membrane is included within a membrane seal plug that is received within the port defined in the outer housing.
6. The x-ray tube as defined in claim 1, wherein the air passageway is a tube extending between the interior volume of the expansion bladder and the port.
7. The remote expansion bladder venting system as defined in claim 1, wherein the coolant is continuously circulated in and out of the x-ray tube housing.
8. A remote expansion bladder venting system suitable for use in an x-ray tube, comprising:
an expansion bladder positioned within a first region of an x-ray tube housing, the first region being substantially non-transmissive to x-rays, the bladder having an exterior surface in contact with a coolant disposed within the housing;
a vent provided in a second region of the x-ray tube housing, the second region being substantially transmissive to x-rays, the vent being in communication with atmospheric pressure; and
an air passageway that interconnects an interior volume of the expansion bladder with the vent so as to enable the expansion bladder to be subject to atmospheric pressure.
9. The remote expansion bladder venting system as defined in claim 8, wherein the vent includes a semi-permeable portion such that the vent is substantially transmissive to air but substantially non-transmissive to the coolant.
10. The remote expansion bladder venting system as defined in claim 9, wherein the semi-permeable portion is comprised of a microporous, expanded PTFE membrane.
11. The remote expansion bladder venting system as defined in claim 8, wherein the air passageway is at least partially defined by a tube that extends between an opening in the expansion bladder interior and the vent.
12. The remote expansion bladder venting system as defined in claim 11, wherein the tube extends from an outlet fitting included at the opening in the expansion bladder interior to a housing fitting included in a surface of the housing in the second region.
13. The remote expansion bladder venting system as defined in claim 8, wherein the coolant is a dielectric oil.
14. An x-ray tube, comprising:
an outer housing that defines an interior volume containing a coolant;
a radiation shielding layer included on a portion of the outer housing;
an evacuated enclosure contained in the outer housing and having an outer surface in communication with the coolant, the evacuated enclosure containing an electron source and an anode positioned to receive electrons produced by the electron source; and
a remote bladder venting system, comprising:
an expansion bladder contained within the portion of the outer housing that includes the radiation shielding layer, the expansion bladder having an outer surface that is in communication with the coolant;
a semi-permeable membrane that is in communication with and substantially transmissive of atmospheric pressure, the semi-permeable membrane being positioned proximate a portion of the outer housing that does not include the radiation shielding layer; and
an air passage extending at least partially between the expansion bladder and the semi-permeable membrane such that an interior volume of the expansion bladder is subject to atmospheric pressure.
15. The x-ray tube as defined in claim 14, wherein the semi-permeable membrane is substantially non-transmissive of liquid so as to preclude leakage of the cooling liquid rupture of the tube or expansion bladder.
16. The x-ray tube as defined in claim 14, wherein the semi-permeable membrane is included in a membrane seal plug that is received in a hole defined in the outer housing.
17. The x-ray tube as defined in claim 14, wherein the air passage and the expansion bladder are composed of rubber.
18. The x-ray tube as defined in claim 16, wherein a fitting is interposed between an end of the air passage and the membrane seal plug, the fitting and the air passage defining an air passageway between the interior volume of the expansion bladder and the membrane seal plug.
19. The x-ray tube as defined in claim 14, wherein placement of the membrane seal plug precludes the need for modifying the lead shielding in order to subject the expansion bladder to atmospheric pressure.
20. The x-ray tube as defined in claim 14, wherein the radiation shielding layer surrounds the anode and the expansion bladder, and wherein the membrane seal plug is positioned proximate a stator of the x-ray tube.

1. A method of forming a semiconductor device, the method comprising:
siliciding a source region and a drain region of a first transistor formed on a substrate, the first transistor having a gate electrode with spacers formed alongside the gate electrode;
forming a dielectric layer over the gate electrode, the spacers, the source region and the drain region, the dielectric layer being different than the spacers and having a thickness less than the gate electrode;
removing the dielectric layer over the gate electrode; and
siliciding the gate electrode of the first transistor.
2. The method of claim 1 wherein the step of siliciding the source region and the drain region is performed during the same process steps.
3. The method of claim 1 wherein the step of siliciding the source region and the drain region includes partially siliciding the gate electrode.
4. The method of claim 1 wherein the step of siliciding the gate electrode is performed by substantially fully siliciding the gate electrode.
5. The method of claim 1 wherein the step of siliciding the gate electrode is performed by forming a first metal layer on the gate electrode and annealing.
6. The method of claim 5 wherein the first metal layer comprises a plurality of layers.
7. The method of claim 1 wherein the step of siliciding the drain and the source are performed by forming a first metal layer on the source and the drain and annealing, and the step of siliciding the gate electrode is performed by forming a second metal layer on the gate electrode and annealing.
8. The method of claim 7 wherein the first metal layer is a metal different from the second metal layer.
9. The method of claim 7 wherein the second metal layer is a plurality of layers.
10. The method of claim 7 wherein the step of siliciding the source and the drain includes partially siliciding the gate electrode.
11. The method of claim 1 wherein the dielectric layer comprises silicon nitride or silicon oxynitride.
12. The method of claim 1 further comprising the step of forming a silicon oxide layer over the dielectric layer.
13. A method of forming a semiconductor device, the method comprising:
siliciding a first sourcedrain region of a first transistor;
siliciding a second sourcedrain region of a second transistor;
forming a dielectric layer over the sourcedrain region and a first gate electrode of the first transistor and the sourcedrain region and a second gate electrode of the second transistor;
removing the dielectric layer over the first gate electrode and the second gate electrode;
siliciding the first gate electrode of the first transistor; and
siliciding the second gate electrode of the second transistor in a different process step as the step of siliciding the fist gate electrode.
14. The method of claim 13 wherein the step of siliciding the first sourcedrain region is performed by depositing a first metal layer and annealing.
15. The method of claim 14 wherein the first metal layer is a plurality of layers.
16. The method of claim 13 wherein the step of siliciding the first sourcedrain region and the step of siliciding the second sourcedrain region is performed with different metals.
17. The method of claim 13 wherein the step of siliciding the first gate electrode and the step of siliciding the second gate electrode is performed with different metals.
18. The method of claim 13 wherein the step of siliciding the first sourcedrain region includes partially siliciding the first gate electrode.
19. The method of claim 13 wherein the step of siliciding the second sourcedrain region includes partially siliciding the second gate electrode.
20. The method of claim 13 wherein the step of siliciding the first gate electrode is performed by substantially fully siliciding the first gate electrode.
21. The method of claim 13 wherein the step of siliciding the second gate electrode is performed by substantially fully siliciding the second gate electrode.
22. The method of claim 13 wherein the step of siliciding the first gate electrode is performed by forming a third metal layer on the first gate electrode and annealing.
23. The method of claim 13 wherein the step of siliciding the second gate electrode is performed by forming a fourth metal layer on the second gate electrode and annealing.
24. The method of claim 13 wherein the dielectric layer comprises silicon nitride or silicon oxynitride.
25. The method of claim 13 further comprising the step of forming a silicon oxide layer over the dielectric layer.
26. A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein each of the first transistor and the second transistor includes a source, a drain, a gate electrode, and spacers formed alongside the gate electrode, the gate electrode of the first transistor and the gate electrode of the second transistor being silicided with different metals, and wherein a dielectric layer having a thickness less than a thickness of the gate electrode covers at least a portion of the source and the drain of the first and second transistors, the dielectric layer and the spacers being different layers.
27. The semiconductor device of claim 26 wherein the gate electrode of the first transistor is substantially fully silicided.
28. The semiconductor device of claim 26 wherein the gate electrode of the second transistor is substantially fully silicided.
29. The semiconductor device of claim 26 wherein the source and the drain of the first transistor is silicided with a first metal and the source and the drain of the second transistor are silicided with a second metal.
30. The semiconductor device of claim 26 wherein the source and the drain of the first transistor is silicided with a metal selected from the group comprising nickel, cobalt, copper, molybdenum, titanium, tantalum, tungsten, erbium, zirconium, platinum, and a combination thereof.
31. The semiconductor device of claim 26 wherein the gate electrode of the first transistor is silicided with a metal selected from the group comprising nickel, cobalt, copper, molybdenum, titanium, tantalum, tungsten, erbium, zirconium, platinum, and a combination thereof.
32. The semiconductor device of claim 26 wherein the source and the drain of the second transistor is silicided with a metal selected from the group comprising nickel, cobalt, copper, molybdenum, titanium, tantalum, tungsten, erbium, zirconium, platinum, and a combination thereof.
33. The semiconductor device of claim 26 wherein the gate electrode of the second transistor are silicided with a metal selected from the group comprising nickel, cobalt, copper, molybdenum, titanium, tantalum, tungsten, erbium, zirconium, platinum, and a combination thereof.
34. A method of forming a semiconductor device, the method comprising:
forming a nitrogen-containing dielectric layer over a gate electrode, a source region, and a drain region of a first transistor formed on a substrate;
removing the nitrogen-containing dielectric layer over the gate electrode;
forming a first metal layer over the gate electrode and the nitrogen-containing dielectric layer, the first metal layer having a non-planar surface; and
siliciding the gate electrode of the first transistor.
35. The method of claim 34 further comprising siliciding the source region and the drain region.
36. The method of claim 35 wherein the siliciding the source region and the drain region includes partially siliciding the gate electrode.
37. The method of claim 34 wherein the siliciding the gate electrode is performed by substantially fully siliciding the gate electrode.
38. The method of claim 34 wherein the siliciding the gate electrode is performed by annealing.
39. The method of claim 34 wherein the first metal layer comprises a plurality of layers.
40. The method of claim 34 wherein the nitrogen-containing dielectric layer comprises silicon nitride or silicon oxynitride.
41. The method of claim 34 further comprising the step of forming a silicon oxide layer over the nitrogen-containing dielectric layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An adaptor to link a standard jack and a standard plug, the adaptor comprising:
a jack adaptor with a principal axis for connecting a standard jack to a polarized and rugged jack interface, the jack adaptor comprising along the principal axis a standardized interface surface to interface with the standard jack, a first casing with a first end plate having a plurality of polarized rugged tabs along the principal axis for forming the polarized, rugged jack interface, and the polarized and rugged interface; and
a plug adaptor with a secondary axis for connecting a standard plug to a polarized, rugged plug interface, the plug adaptor comprising along the secondary axis a standardized interface to interface with a plug, and a second casing with a second end plate to interface with at least two polarized notches and the plug interface;
wherein when the plug interface is connected to the jack interface for connecting the standard jack to the standard plug, the first end plate is adjacent to the second end plate and the at least two polarized rugged tabs are mated without being bent to the polarized notches, and
wherein the first end plate has a surface perpendicular to the principal axis and the plurality of polarized rugged tabs extend from the surface in a direction parallel to the principal axis.
2. The adaptor of claim 1, wherein the second casing is a threaded portion on a body portion of the plug adaptor and a spanner nut.
3. The adaptor for a connector of claim 2, wherein the threaded portion includes a flat portion.
4. The adaptor of claim 1, wherein the polarized notches and the polarized rugged tabs are distributed around the periphery of the first end plate and the second end plate at regular intervals.
5. The adaptor of claim 4, wherein the regular interval is 180 degrees for a configuration with two polarized rugged tabs.
6. The adaptor of claim 4, wherein the regular interval is a configuration with three polarized rugged tabs, the regular interval being selected from a group consisting of a 100\xb0160\xb0100\xb0 configuration, a 110\xb0140\xb0110\xb0 configuration, a 120\xb0120\xb0120\xb0 configuration, a 130\xb0100\xb0130\xb0 configuration, and a 140\xb080\xb0140\xb0 configuration.
7. The adaptor of claim 1, wherein the jack is a quick-lock RC connector jack interface.
8. A method for keying one or more mating connector pairs, the connectors including a first connector along a principal axis comprising along the principal axis a first casing with a first end plate having a plurality of polarized rugged tabs, a first cable holder and a jack interface and second connector with a secondary axis comprising along the secondary axis a second casing, a second cable holder with a second end plate with at least two polarized notches and the plug interface, the method including the steps of:
placing the first connector on a first end of a cable to connect at the first cable holder;
placing the second connector on a second end of a cable to connect at the second cable holder; and
mating the rugged tabs on the first end plate to the notches of the second end plate to connect the first connector to the second connector so the first end of the cable is connected to the second end of the cable.
9. The method of claim 8, wherein the first connector includes a threaded portion and a spanner nut with the second end plate.