Author: claimsbot

1. A method for producing a semiconductor light emitting device comprising the steps of:
(a) forming an insulating layer on a single-crystal silicon substrate;
(b) forming a gallium nitride type compound semiconductor layer as a buffer layer on the insulating layer;
(c) stacking on the buffer layer in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of the gallium nitride type compound semiconductor;
(d) exposing a predetermined surface of the buffer layer by etching perpendicularly to the single-crystal silicon substrate;
(e) forming electrodes on both the cap layer and the predetermined surface of the buffer layer exposed by the etching treatment in step (d), whereby obtaining a semiconductor wafer having multilayer structure; and
(f) separating the semiconductor wafer to chips by dicing or by cleaving,
wherein the step of forming the insulating layer is implemented by removing an oxide film over the single-crystal silicon substrate and forming a silicon nitride layer by heating under an atmosphere of nitrogen gas.
2. The method for producing the semiconductor light emitting device of claim 1, wherein the single-crystal silicon substrate has a (111) crystal plane as a principal plane.
3. A method for producing a semiconductor light emitting device comprising the steps of:
(a) forming an insulating layer on a single-crystal silicon substrate;
(b) forming a gallium nitride type compound semiconductor layer as a buffer layer on the insulating layer;
(c) stacking on the buffer layer in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of the gallium nitride type compound semiconductor;
(d) exposing a predetermined surface of the buffer layer by etching perpendicularly to the single-crystal silicon substrate;
(e) forming electrodes on both the cap layer and the predetermined surface of the buffer layer exposed by the etching treatment in step (d), whereby obtaining a semiconductor wafer having multilayer structure; and
(f) separating the semiconductor wafer to chips by dicing or by cleaving, wherein the step of forming the insulating layer is implemented by growing a layer of aluminum oxide.
4. A method for producing a semiconductor light emitting device comprising the steps of:
(j) preparing a group II-VI compound semiconductor substrate;
(k) stacking a buffer layer of gallium nitride type compound semiconductor on a principal plane of the group II-VI compound semiconductor substrate;
(l) stacking on the buffer layer in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of gallium nitride semiconductor, with matching crystal lattice of each layer to one another;
(m) forming electrodes on both the top of the cap layer and the bottom of the group II-VI compound semiconductor substrate, whereby obtaining a semiconductor wafer having multilayer structure; and
(n) cleaving the semiconductor wafer to chips.
5. The method for producing a semiconductor light emitting device of claim 4, wherein the step of stacking the buffer layer is implemented by forming a low-temperature buffer layer at low temperature and then, by forming a high-temperature buffer layer at high temperature.
6. The method for producing a semiconductor light emitting device of claim 4, wherein the buffer layers are made of n-type GaN, the lower cladding layer is made of n-type AlxGa1\u2212xN (0<x<1), the active layer is made of GanIn1\u2212nN (0<n\u22661), the upper cladding layer is made of p-type AlxGa1\u2212xN (0<x<1), and the cap layer is made of p-type GaN.
7. The method for producing a semiconductor light emitting device of claim 4, wherein the group II-VI compound semiconductor substrate having a principal plane, the principal plane being a top surface comprising group VI atoms of the group II-VI compound semiconductor substrate, is prepared.
8. A method for producing a semiconductor light emitting device comprising the steps of:
(o) preparing a group III-V compound semiconductor substrate, said group III-V compound semiconductor selected from the group consisting of GaAs, InAs, GaP, and InP;
(p) stacking a buffer layer of gallium nitride type compound semiconductor on a principal plane of the group III-V compound semiconductor substrate;
(q) stacking on the buffer layers in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of gallium nitride type semiconductor, with matching crystal lattice of each layer to one another;
(r) forming electrodes on both the top of the cap layer and the bottom of the group III-V compound semiconductor substrate, whereby obtaining a semiconductor wafer having multilayer structure; and
(s) cleaving the semiconductor wafer to chips.
9. The method for producing semiconductor light emitting device of claim 8, wherein the step of forming the buffer layers is implemented by forming a low-temperature buffer layer at low temperature and then, by forming a high-temperature buffer layer at high temperature.
10. The method for producing the semiconductor light emitting device of claim 8, wherein the group III-V compound semiconductor substrate having a principal plane, the principal plane being a top surface comprising group V atoms of the group III-V compound semiconductor substrate, is prepared.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of operating a magnetic resonance system in order to perform magnetic resonance measurements on a sample, comprising:
applying, by the magnetic resonance system, a first predetermined number of magnetic resonance pulse trains as a source of magnetic resonance excitation in order to generate a spectrum of excitation frequencies, each pulse train of the magnetic resonance pulse trains, having a constant amplitude and including a second predetermined number of pulses spaced by a predetermined time interval, each of the magnetic resonance pulse trains being modulated by a bent function; and
sampling, by the magnetic resonance system, magnetic resonance data after each of the pulses of each of the magnetic resonance pulse trains,
wherein each of the magnetic resonance pulse trains being modulated by the bent function causes:
(i) each of the magnetic resonance pulse trains to be constant in power, and
(ii) a Walsh transform of the sequence of phases of each of the magnetic resonance pulse trains, to also be constant in power.
2. A method according to claim 1, wherein the bent function is chosen such that the magnetic resonance pulse trains include a series of a first predetermined number of wavelet functions, and wherein each pulse train of the magnetic resonance pulse trains is defined by a second predetermined number of discrete points in time.
3. A method according to claim 1, wherein a spectrum of excitation frequencies covers frequencies of zero and integer multiples of a frequency interval.
4. A method according to claim 3, wherein the frequency interval is selected as the reciprocal value of the product of the first predetermined number and the predetermined time interval.
5. A method according to claim 1, wherein the predetermined time interval is determined whereby with the application of each pulse of the magnetic resonance pulse trains, the net magnetization of the sample is rotated by a small flip angle.
6. A Magnetic Resonance measurement apparatus employing the method of claim 1, comprising:
a) a magnetic arrangement configured to create a static magnetic field in a sample;
b) a coil configured to excite, refocus and sample a spin signal within the sample, and
c) a controller operative in order to cause the magnet arrangement and the coil to perform the applying step of claim 1 as part of the method of performing magnetic resonance measurements on the sample.
7. A Magnetic Resonance measurement apparatus according to claim 6, wherein the magnet arrangement additionally comprises;
at least one magnet, of at least one of the following kinds of magnets:
a) a superconducting magnet;
b) a permanent magnet; and
c) an electromagnet.
8. A Magnetic Resonance measurement apparatus according to claim 6, wherein the magnet arrangement is a single-sided magnet arrangement.
9. A Magnetic Resonance measurement apparatus according to claim 6, wherein the controller is further operative in order to cause the magnet arrangement and coil to generate magnetic gradient fields and to produce a spatially resolved sampling of magnetic resonance measurement signals.
10. A method of operating a magnetic resonance system according to claim 1, wherein the magnetic resonance measurements are nuclear magnetic resonance (NMR) measurements.
11. A method of operating a magnetic resonance system according to claim 10, wherein the NMR measurements include magnetic resonance imaging (MRI) measurements.
12. A method of operating a magnetic resonance system according to claim 1, wherein the magnetic resonance measurements are nuclear quadrupole resonance (NQR) measurements.
13. A method of operating a magnetic resonance system according to claim 12, wherein the presence of at least one of the following materials is detected by the respective NQR measurements:
a) explosives; and
b) narcotics.
14. A method of operating a magnetic resonance system according to claim 1, wherein the magnetic resonance measurements are electron spin resonance (ESR) measurements.
15. A method of operating a magnetic resonance system according to claim 1, wherein the magnetic resonance measurements include at least one of the following:
a) bore-hole NMR measurements;
b) well-logging measurements; and
and measurements below the earth surface in porous environments comprising fluids.

1. A method of electroplating a workpiece, comprising the steps:
immersing an anode and a cathode in a solution;
using the cathode to support the workpiece;
positioning a selective shieldmaterial flow assembly between the anode and the cathode, said shieldmaterial flow assembly forming a multitude of openings having adjustable sizes, including the step of positioning said multitude of openings laterally extending across said anode;
generating an electric field emanating from the anode to the cathode, to generate a corresponding current to deposit an electroplating material on the workpiece during an electroplating process; and
adjusting the sizes of the adjustable openings, during the electroplating process, for selectively and controllably adjusting the amount of electric flux passing through the selective shieldmaterial flow assembly and the distribution of the electroplating material across the workpiece.
2. A method according to claim 1, wherein the selective shieldmaterial flow assembly includes first and second selective shieldmaterial flow mechanisms, and the adjusting step includes the step of moving the first and second selective shieldmaterial flow mechanisms relative to each other to adjust the sizes of the opening of the selective shieldmaterial flow assembly.
3. A method according to claim 2, wherein the step of moving the first and second selective shieldmaterial flow mechanisms also adjusts the location of the opening of the selective shieldmaterial flow shield assembly.
4. A method according to claim 2, wherein the first selective shieldmaterial flow mechanism includes a first series of through openings, and the second selective shieldmaterial flow mechanism includes a second series of through openings, and wherein:
the adjusting step further includes the step of using the first and second series of openings, in combination, to form the openings of the selective shieldmaterial flow assembly; and
the moving step includes the step of moving the first and second selective shieldmaterial flow mechanisms laterally relative to each other to adjust the sizes of the openings of the selective shieldmaterial flow assembly.
5. A method according to claim 2, wherein the positioning step includes the step of connecting the first and second selective shieldmaterial flow mechanisms together for limited movement relative to each other.
6. A method according to claim 5, wherein:
the positioning step includes the further step of providing a control means to move the selective shieldmaterial flow mechanisms relative to each other; and
the adjusting step includes the step of using the control means to move the selective shieldmaterial flow mechanisms relative to each other during the electroplatingelectroless process to adjust the sizes of the openings of the shieldmaterial flow apparatus mechanism.
7. A method of plating a work piece comprising the steps of:
providing a source of depositing material;
providing a transport medium;
providing at least one work piece in a work piece holder;
supporting said at least one work piece in said work holder;
immersing said work piece holder in said transport medium;
positioning a selective shieldmaterial flow assembly between said work piece holder and said source of depositing material in said transport medium, said selective shieldmaterial flow assembly forming at least one opening having an adjustable size, including the step of positioning said at least one opening laterally extending across the work piece; and
adjusting the said adjustable size of said at least one adjustable opening for selectively and controllably adjusting the amount of said depositing material passing through said selective shieldmaterial flow apparatus and the distribution of said depositing material on said at least one work piece.
8. The method according to claim 7 wherein said selective shieldmaterial flow assembly further includes a first selective shieldmaterial flow mechanism and a second selective shieldmaterial flow mechanism, and the adjusting step includes the step of moving said first shieldmaterial flow mechanism and said second shieldmaterial flow mechanism relative to each other to adjust the said adjustable size of said at least one opening of said selective shieldmaterial flow assembly.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A drill string stabilizer, comprising:
a reinforcing sleeve having an inner surface and an outer surface; and
at least one helical channel extending along the outer surface;
wherein the inner surface includes a first tapered section and a second section having a substantially uniform diameter, and wherein the first tapered section is threadless.
2. The drill string stabilizer of claim 1, wherein the at least one helical channel extends substantially the entire length of the reinforcing sleeve.
3. The drill string stabilizer of claim 2, wherein the outer surface of the reinforcing sleeve comprises a plurality of helical channels.
4. The drill string stabilizer of claim 2, wherein the at least one helical channel moves material displaced by a drilling action along the length of the reinforcing sleeve as it rotates during the drilling.
5. The drill string stabilizer of claim 2, wherein a rake angle of the at least one helical channel is about 30 degrees.
6. The drill string stabilizer of claim 1, wherein the at least one helical channel extends along only a portion of the length of the reinforcing sleeve.
7. A drill string stabilizer, comprising:
a reinforcing sleeve having an inner surface and an outer surface; and
at least one helical channel extending along the outer surface;
wherein the inner surface includes a first tapered section and a second section having a substantially uniform diameter and wherein the inner surface of the reinforcing sleeve includes a third section having a substantially uniform diameter that is larger than the substantially uniform diameter of the second section.
8. A percussive drill string, comprising:
a drill rod including an outer surface, the outer surface having a tapered portion and a second portion of substantially uniform diameter; and
a reinforcing sleeve having an inner surface that includes a first tapered section and a second section having a substantially uniform diameter, the reinforcing sleeve being contained on the tapered portion and the second portion of the drill rod, wherein the outer diameter of the reinforcing sleeve is substantially the same or slightly smaller than a drill bit configured to be secured to an end of the drill rod.
9. The drill string of claim 8, wherein the inner surface of the sleeve is configured to substantially match the outer surface of the tapered portion so that the sleeve is not displaced when the drill rod moves.
10. The drill string of claim 8, wherein the outer surface of the reinforcing sleeve comprises at least one helical channel.
11. The drill string of claim 10, wherein the at least one helical channel moves material displaced by a drilling action along the length of the drill rod as it rotates during the drilling.
12. The drill string of claim 10, wherein a rake angle of the at least one helical channel can range up to about 30 degrees.
13. The drill string of claim 8, wherein a plurality of reinforcing sleeves are contained on the drill rod.
14. A method for making a percussive drill string, the method comprising:
providing a drill rod containing a tapered portion and a second portion of substantially uniform diameter;
providing a tapered section of an inner surface of a reinforcing sleeve on the tapered portion of the drill rod and providing a second section of the inner surface of the reinforcing sleeve on the second portion of the drill rod, the second section of the inner surface of the reinforcing sleeve having a substantially uniform diameter, wherein an outer diameter of the reinforcing sleeve is substantially the same size or slightly smaller than a drill bit configured to be secured to an end of the drill rod and the outer surface of the reinforcing sleeve comprising helical channels.
15. The method of claim 14, further comprising heating the reinforcing sleeve, forcing the reinforcing sleeve over the drill rod, and then cooling the reinforcing sleeve to attach the reinforcing sleeve to the drill rod.
16. The method of claim 15, wherein the reinforcing sleeve bonds to the drill rod during the cooling process.
17. A percussive drilling apparatus, comprising:
a percussive drill bit;
a drill string containing a drill rod with a tapered portion that is connected to the drill bit; and
a reinforcing sleeve contained on the tapered portion of the drill rod, an inner surface of the reinforcing sleeve including a tapered section and a second section having a substantially uniform diameter, the outer diameter of the sleeve being substantially the same or slightly smaller than the drill bit, and the outer surface of the reinforcing sleeve comprising a helical channel.
18. The drilling apparatus of claim 17, wherein the inner surface of the sleeve is configured to substantially match the outer surface of the tapered portion so that the sleeve is not displaced when the drill rod moves.
19. The drilling apparatus of claim 17, wherein the helical channel moves material displaced by a drilling action along the length of the drill rod as it rotates during the drilling.
20. The drilling apparatus of claim 17, wherein the reinforcing sleeve is positioned adjacent the drill bit.
21. A method for percussive drilling, comprising:
providing a percussive drilling apparatus containing a drill bit, a drill string containing a drill rod and a reinforcing sleeve, the drill rod having a tapered portion that is connected to the drill bit, the reinforcing sleeve having an inner surface with a tapered section, the tapered section of the reinforcing sleeve being contained on the tapered portion of the drill rod, the inner surface of the reinforcing sleeve further including a second section having a substantially uniform diameter, wherein the outer diameter of the sleeve is substantially the same or slightly smaller than the diameter of the drill bit and the outer surface of the reinforcing sleeve comprising a helical channel; and
repeatedly forcing the drill bit against a material to be drilled.
22. The method of claim 21, further comprising rotating the drilling apparatus so that the material displaced by the drilling action moves along the length of the drill rod as it rotates.