Author: claimsbot

1. A method of forming a resistance variable memory element comprising the steps of:
forming a first electrode;
forming a first chalcogenide glass layer in contact with said first electrode;
forming a first metal containing layer in contact with said first chalcogenide glass layer; and
forming a second chalcogenide glass layer in electrical communication with said first metal containing layer;
forming a second metal containing layer in contact with said first chalcogenide glass layer;
forming a third chalcogenide glass layer in contact with said second metal containing layer; and
forming a second electrode in electrical communication with said third chalcogenide glass layer, said memory element being constructed and arranged such that a resistance value of said memory element switches from a higher to lower resistance state upon application of a positive voltage in a first voltage range and from a lower to higher resistance state upon application of a positive voltage in a second voltage range.
2. The method of claim 1 wherein said chalcogenide glass layers comprise a material having the formula GexSe100\u2212x, wherein x is between about 18 to about 43.
3. The method of claim 2 wherein said chalcogenide glass layers have a stoichiometry of about Ge40Se60.
4. The method of claim 1 wherein said chalcogenide glass layers comprise a plurality of chalcogenide glass layers.
5. The method of claim 1 wherein said metal containing layers comprise a plurality of metal containing layers.
6. The method of claim 1 wherein one or more of said chalcogenide glass layers contains a metal dopant.
7. The method of claim 1 wherein one or more of said metal containing layers comprises silver-selenide.
8. The method of claim 7 wherein said metal dopant comprises silver.
9. The method of claim 1 wherein said metal containing layers have a thickness which is equal to or greater than the thickness of each of said chalcogenide glass layers.
10. The method of claim 1 wherein each of said metal containing layers has a first thickness and each of said chalcogenide glass layers has a second thickness whereby a thickness ratio of said first thickness to said second thickness is between about 5:1 to about 1:1.
11. The method of claim 10 further wherein said thickness ratio of said first thickness to said second thickness is between about 3.3:1 to about 2:1.
12. A method of forming a resistance variable memory element comprising:
forming a first chalcogenide glass layer;
forming a silver-selenide layer in contact with said first glass layer; and
forming a second chalcogenide glass layer in contact with said silver-selenide layer, said memory element being constructed and arranged such that a resistance value of said memory element switches from a higher to lower resistance state upon application of a first positive voltage and from a lower to higher resistance state upon application of a positive voltage in an second voltage.
13. The method of claim 12 wherein said chalcogenide glass material has a stoichiometric composition of about Ge40Se60.
14. The method of claim 12 wherein at least one of said glass layers contains a metal dopant.
15. The method of claim 14 wherein said metal dopant comprises silver.
16. The method of claim 12 further comprising the step of forming alternating layers of said chalcogenide glass material and said silver-selenide layer.
17. The method of claim 12 wherein said layer formed of said chalcogenide glass material further contains a metal dopant.
18. The method of claim 17 wherein said metal dopant comprises silver.
19. The method of claim 12 wherein said metal containing layer has a thickness which is equal to or greater than a thickness of each of said first and second chalcogenide glass layers.
20. The method of claim 12 wherein said metal containing layer comprises a plurality of silver-selenide layers in serial contact with each other.
21. A method of forming a resistance variable memory element comprising:
forming a first electrode;
forming a second electrode; and
forming a plurality of chalcogenide glass layers and at least one metal containing layer between said first and second electrodes, whereby said plurality of chalcogenide glass layers alternate with said at least one metal containing layer, with one of said chalcogenide glass layers being in contact with said first electrode and another of said chalcogenide glass layers being in contact with said second electrode, said layers being constructed and arranged such that a resistance value of said memory element switches from a higher to lower resistance state upon application of first a positive voltage and from a lower to higher resistance state upon application of a second positive voltage.
22. The method of claim 21 wherein said at least one metal containing layer comprises one or more silver-selenide layers.
23. The method of claim 21 wherein one or more of said plurality of chalcogenide glass layers comprises a plurality of chalcogenide glass layers.
24. The method of claim 21 wherein one or more of said at least one metal containing layer comprises a plurality of metal containing layers.
25. The method of claim 21 wherein one or more of said plurality of chalcogenide glass layers contains a metal dopant.
26. The method of claim 25 wherein said metal dopant comprises silver.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A system of driving a touch screen, the system comprising:
a touch sensitive panel including a plurality of first sensor lines parallel to a first direction, and a plurality of second sensor lines parallel to a second direction;
a driving circuit coupled with the first sensor lines, wherein the driving circuit is configured to sequentially apply a first scanning signal through each of the first sensor lines;
a first sensing circuit for reporting a plurality of first response signals that are transmitted through the second sensor lines in response to each applied first scanning signal; and
a controller configured to:
identify one or more touch location based on the first response signals reported by the first sensing circuit, and
track each identified touch location.
2. The system according to claim 1, wherein the sensing circuit includes a plurality of integrator circuits respectively coupled with the second sensor lines.
3. The system according to claim 2, wherein each of the integrator circuits comprises:
an operational amplifier having a non-inverting input, an inverting input and an output, wherein the non-inverting input is coupled with a reference voltage; and
a variable capacitor and a switch respectively coupled in parallel between the inverting input and the output of the operational amplifier.
4. The system according to claim 3, wherein the inverting input of the operational amplifier is coupled with one of the second sensor lines.
5. The system according to claim 1, wherein each of the first sensor lines is coupled with a plurality of first electrodes laid on a first plane, and each of the second sensor lines is coupled with a plurality of second electrodes laid on a second plane parallel to the first plane.
6. The system according to claim 5, wherein the occurrence of a touch event at a touch location on the touch sensitive panel causes a change in capacitance coupling between a neighboring pair of the first and second electrodes that is adjacent to the touch location.
7. The system according to claim 6, wherein the change in capacitance coupling is detected from the first response signal that is transmitted through the second sensor line associated with the neighboring pair of the first and second electrodes, when the first scanning signal is applied through the first sensor line associated with the neighboring pair of the first and second electrodes.
8. The system according to claim 1, wherein the driving circuit is further coupled with each of the second sensor lines, and the first sensor lines are further coupled with a second sensing circuit.
9. The system according to claim 8, wherein the driving circuit is further configured to sequentially apply a second scanning signal through each of the second sensor lines, and the second sensing circuit is adapted to report second response signals that are transmitted through the first sensor lines in response to each applied second scanning signal.
10. The system according to claim 9, wherein the controller is further configured to identify and track each touch location on the touch sensitive panel based on the first and second response signals.
11. A method of driving a touch screen system, wherein the touch screen system includes a touch sensitive panel having a plurality of spaced-apart first sensor lines laid parallel to a first direction and a plurality of spaced-apart second sensor lines laid parallel to a second direction, the method comprising:
performing a plurality of successive scanning cycles through the touch sensitive panel, wherein each of the scanning cycles comprises:
applying a scanning signal one at a time through each of the first sensor lines;
for each applied scanning signal, identifying one or more touch location on the touch sensitive panel based on a plurality of response signals read through the second sensor lines; and

tracking each identified touch location through the successive scanning cycles.
12. The method according to claim 11, wherein the second sensor lines are respectively coupled with a plurality of integrator circuits through which the response signals are read for each applied scanning signal.
13. The method according to claim 11, wherein each of the first sensor lines is coupled with a plurality of first electrodes laid on a first plane, and each of the second sensor lines is coupled with a plurality of second electrodes laid on a second plane parallel to the first plane.
14. The method according to claim 13, wherein the occurrence of a touch event at a touch location on the touch sensitive panel causes a change in capacitance coupling between a neighboring pair of the first and second electrodes that is adjacent to the touch location.
15. The method according to claim 14, wherein the step of identifying one or more touch location comprises detecting the change in capacitance coupling from the response signal that is transmitted through the second sensor line associated with the neighboring pair of the first and second electrodes, when the scanning signal is applied through the first sensor line associated with the neighboring pair of the first and second electrodes.
16. A method of driving a touch screen system, wherein the touch screen system includes a touch sensitive panel having a plurality of first sensor lines parallel to a first direction and a plurality of second sensor lines parallel to a second direction, the method comprising:
performing a plurality of successive scanning cycles through the touch sensitive panel, wherein each of the scanning cycles comprises:
applying a first scanning signal one at a time through each of the first sensor lines;
applying a second scanning signal one at a time through each of the second sensor lines;
for each first scanning signal applied on one first sensor line, identifying one or more touch location on the touch sensitive panel based on a plurality of first response signals read through the second sensor lines;
for each second scanning signal applied on one second sensor line, identifying one or more touch location on the touch sensitive panel based on a plurality of second response signals read through the first sensor lines; and

tracking each identified touch location on the touch sensitive panel through the successive scanning cycles.
17. The method according to claim 16, wherein the first and second sensor lines are respectively coupled with a plurality of integrator circuits.
18. The method according to claim 16, wherein each of the first sensor lines is coupled with a plurality of first electrodes laid on a first plane, and each of the second sensor lines is coupled with a plurality of second electrodes laid on a second plane parallel to the first plane.
19. The method according to claim 18, wherein the occurrence of a touch event at a touch location on the touch sensitive panel causes a change in capacitance coupling between a neighboring pair of the first and second electrodes that is adjacent to the touch location.
20. The method according to claim 19, wherein the step of identifying one or more touch location based on the response signals comprises detecting the change in capacitance coupling from the response signal that is transmitted through the second sensor line associated with the neighboring pair of the first and second electrodes, when the scanning signal is applied through the first sensor line associated with the neighboring pair of the first and second electrodes.

1. A method of treating heart failure comprising:
(a) identifying a patient having heart failure; and
(b) administering to said patient a histone deacetylase inhibitor.
2. The method of claim 1, wherein said histone deacetylase inhibitor is selected from the group consisting of trichostatin A, trapoxin B, MS 275-27, m-carboxycinnamic acid bis-hydroxamide, depudecin, oxamfiatin, apicidin, suberoylanilide hydroxamic acid, Scriptaid, pyroxamide, 2-amino-8-oxo-9,10-epoxy-decanoyl, 3-(4-aroyl-1H-pyrrol-2-yl)-N-hydroxy-2-propenamide and FR901228.
3. The method of claim 1, wherein administering comprises intravenous administration of said histone deacetylase inhibitor.
4. The method of claim 1, wherein administering comprises oral, transdermal, sustained release, suppository, or sublingual administration.
5. The method of claim 1, further comprising administering to said patient a second therapeutic regimen.
6. The method of claim 5 wherein said second therapeutic regimen is selected from the group consisting of a beta blocker, an iontrope, diuretic, ACE-I, AII antagonist, and Ca++-blocker.
7. The method of claim 5, wherein said second therapeutic regimen is administered at the same time as said histone deacetylase inhibitor.
8. The method of claim 5, wherein said second therapeutic regimen is administered either before or after said histone deacetylase inhibitor.
9. The method of claim 1, wherein treating comprises improving one or more symptoms of heart failure.
10. The method of claim 9, wherein said one or more symptoms comprises increased exercise capacity, increased blood ejection volume, left ventricular end diastolic pressure, pulmonary capillary wedge pressure, cardiac output, cardiac index, pulmonary artery pressures, left ventricular end systolic and diastolic dimensions, left and right ventricular wall stress, or wall tension, quality of life, disease-related morbidity and mortality.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A rupture detection system comprising:
an outer shell configured for implantation within a subject;
an inner shell contained within the outer shell, where the inner shell is filled with
a first volume of fluid or gel and is suspended within the outer shell via a second volume of the fluid or gel;
at least one optical waveguide incorporated into the inner shell andor outer shell; and,
a radio-frequency identification (RFID) circuit secured within or along the inner shell and in optical communication with the at least one optical waveguide, wherein the RFID is configured to provide an indication of receipt of an optical signal indicative of a discontinuity in the optical waveguide.
2. The rupture detection system of claim 1, wherein the RFID circuit comprises:
a photo emitter;
a photo detector; and
a light guiding and concentrating mechanism,
where the at least one optical waveguide is in optical communication between the photo emitter and the photo detector such that the photo emitter is configured to emit an optical signal directed through the light guiding and concentrating mechanism and into the waveguide.
3. The rupture detection system of claim 2, wherein the photo emitter and photo detector are attached to the inner shell of a breast implant.
4. The rupture detection system of claim 3, wherein the optical waveguide is made of a material with similar mechanical properties as the shell of the breast implant such that the optical waveguide will break when the shell ruptures.
5. The rupture detection system of claim 3, wherein the optical waveguide is configured to break when the shell is subjected to mechanical stresses that will eventually lead to its rupture.
6. The rupture detection system of claim 4, wherein the optical waveguide is a silicone-based optical fiber.
7. The rupture detection system of claim 6, wherein the at least one optical fiber is distributed across the inner shell.
8. The rupture detection system of claim 2, wherein the photo detector comprises a noise reduction sub-circuit.
9. The rupture detection system of claim 8, wherein the noise reduction sub-circuit is configured to reduce noise and bias that originates in the photo detector circuitry.
10. The rupture detection system of claim 2, wherein the light guiding and concentration mechanism comprises a lens.
11. The rupture detection system of claim 2, where in the photo emitter is configured to directly guide and concentrate light.
12. A rupture detection system comprising:
a photo emitter;
a photo detector;
a light guiding and concentrating mechanism; and
a single optical waveguide between the photo emitter and the photo detector, wherein the photo emitter is configured to emit an optical signal directed through the light guiding and concentrating mechanism and into the waveguide, and
wherein the photo detector is configured to provide an indication of the receipt of the optical signal to detect a discontinuity in the optical waveguide.
13. The rupture detection system of claim 12, further comprising a radio frequency identification (RFID) circuit in communication with the photo emitter and the photo detector, wherein the RFID circuit is configured to issue commands to the photo emitter and to wirelessly transmit the indication from the photo detector to a RFID reader.
14. The rupture detection system of claim 13, wherein the photo emitter, photo detector, optical waveguide, and RFID circuit are attached to a shell of a breast implant.
15. The rupture detection system of claim 14, wherein the optical waveguide is made of a material with similar mechanical properties as the shell of the breast implant such that the optical waveguide will break when the shell ruptures.
16. The rupture detection system of claim 14, wherein the optical waveguide is configured to break when the shell is subjected to mechanical stresses that will eventually lead to its rupture.
17. The rupture detection system of claim 15, wherein the optical waveguide is a silicone-based optical fiber.
18. The rupture detection system of claim 17, wherein the single optical fiber is distributed across the shell.
19. The rupture detection system of claim 18, wherein the single optical fiber is distributed across the shell such that the optical fiber does not cross itself more than twice.
20. The rupture detection system of claim 18, wherein the single optical fiber is distributed across the shell in two or more separate layers of the shells.
21. The rupture detection system of claim 13, wherein the photo detector comprises a noise reduction sub-circuit.
22. The rupture detection system of claim 21, wherein the noise reduction sub-circuit is configured to reduce noise and bias that originates in the photo detector circuitry.
23. The rupture detection system of claim 22, wherein receiver comprises a photo detector having a dark current, and wherein the noise reduction sub-circuit reduces a bias in the photo detector by compensating for the dark current.
24. The rupture detection system of claim 22, wherein the noise reduction sub-circuit is configured to reduce noise and bias that is introduced into the single optical waveguide.
25. A device for detecting a discontinuity in a shell comprising:
a microcontroller;
a photo emitter in communication with the microcontroller;
a photo detector in communication with the microcontroller;
a light guiding and concentrating mechanism;
a single optical fiber embedded in the shell, wherein a first end of the optical fiber is optically coupled through the light guiding and concentrating mechanism to the photo emitter and a second end of the optical fiber is optically coupled to the photo detector; and
an RFID circuit in communication with the microcontroller, wherein the RFID circuit is configured to communicate wirelessly with a RFID reader.
26. The device of claim 25, wherein the optical fiber is made of a material with similar mechanical properties as the shell such that the optical fiber will break when the shell ruptures.
27. The device of claim 26, wherein the optical fiber is made of a silicone-based material.
28. The device of claim 26, wherein the single optical fiber is distributed across the shell such that the optical fiber does not cross itself more than twice.
29. A method of detecting a discontinuity in a breast implant shell comprising:
holding a RFID reader close to a breast implant that comprises a detection system, wherein the detection system comprises a photo emitter, a photo detector, a single optical waveguide therebetween, and a light guiding and concentrating mechanism optically coupling the photo emitter and a terminal end of the single optical waveguide;
sending a signal from the RFID reader to the detection system to emit an optical signal from the photo emitter to the single optical waveguide; and
interrogating the detection system with the RFID reader to query the photo detector to detect a discontinuity in the optical waveguide based on the reception of the optical signal.
30. The method of claim 29, wherein the breast implant is external to a patient.
31. The method of claim 29, wherein the breast implant has been implanted in a patient.