Author: claimsbot

1. A method for producing a high frequency optical signal component representative of a high frequency electrical signal component, comprising the steps of:
providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on said drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of said base region and comprising an emitter mesa that includes at least one emitter layer;
providing, in said base region, at least one region exhibiting quantum size effects;
providing a basedrain electrode coupled with said base region and coupled with said drain region, and providing an emitter electrode coupled with said emitter region, said basedrain electrode having a first portion on an exposed surface of said base region and a further portion coupled with said drain region;
providing an aperture disposed over said emitter region;
applying signals with respect to said basedrain and emitter electrodes to produce light emission from said base region, said step of providing an aperture further comprising providing an optical cavity for said light emission in the region between said first portion of the basedrain electrode and said emitter electrode; and
scaling said aperture to control the speed of light emission response to said high frequency electrical signal component.
2. The method as defined by claim 1, wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said step of providing said electrodes comprises providing said emitter electrode along one side of said surface portion of the emitter mesa and providing the first portion of said basedrain electrode on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion.
3. The method as defined by claim 1, wherein said step of providing said electrodes further comprises providing said emitter electrode and the first portion of said basedrain electrode as opposing linear conductive strips.
4. The method as defined by claim 1, wherein said cavity is substantially rectangular, and wherein said scaling of lateral dimensions comprises providing said cavity with linear dimensions of about 10 \u03bcm or less.
5. The method as defined by claim 1, wherein said cavity is substantially rectangular, and wherein said scaling of lateral dimensions comprises providing said cavity with linear dimensions of about 5 \u03bcm or less.
6. The method as defined by claim 1, wherein said high frequency electrical signal component has a frequency of at least about 2 GHz.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. In a system that receives an optical signal, a detector that attenuates the optical signal based on an optical power of the optical signal, the detector comprising:
a detecting layer that receives an incident optical signal and generates a current that is related to an optical power of the incident optical signal;
a PIN structure connected to the detecting layer such that the incident optical signal passes through the PIN structure before the detecting layer; and
a control module that monitors the optical power of the incident optical signal detected by the detecting layer, wherein the control module generates a bias voltage to reverse bias the PIN structure when the optical power exceeds a threshold such that the incident optical signal is attenuated by the PIN structure before being detected by the detecting layer.
2. A detector as defined in claim 1, wherein the detecting layer is a PIN diode or an APD diode.
3. A detector as defined in claim 1, wherein an I layer of the PIN structure has a thickness, wherein an attenuation of the incident optical signal is related to the thickness of the I layer.
4. A detector as defined in claim 1, wherein the detecting layer is formed on a first side of a substrate and the PIN structure is formed on a second side of the substrate.
5. A detector as defined in claim 1, wherein the PIN structure is formed on a substrate and the detecting layer is formed on the PIN structure.
6. A detector as defined in claim 1, wherein the control module controls the bias voltage such that the PIN structure is forward biased when the optical power is below the threshold.
7. A detector as defined in claim 1, wherein the control module varies a magnitude of the bias voltage according to the optical power such that the optical signal is variably attenuated.
8. A detector as defined in claim 1, further comprising a lens to focus the incident optical signal on the detecting layer.
9. A method for variably attenuating an optical signal, the method comprising:
receiving an optical signal with a detector such that the optical signal is focused on a detecting diode of the detector, wherein the optical signal passes through a PIN structure of the detector before being focused on the detecting diode;
monitoring an optical power of the optical signal;
applying a forward bias to the PIN structure when the optical power is below a threshold; and
applying a reverse bias to the PIN structure when the optical power exceeds the threshold such that the optical signal is partially absorbed.
10. A method as defined in claim 9, wherein reverse biasing the PIN structure when the optical power exceeds the threshold such that the optical signal is partially absorbed further comprises controlling a bias voltage that is applied to the PIN structure.
11. A method as defined in claim 10, wherein controlling the bias voltage that is applied to the PIN structure further comprises:
increasing the bias voltage as the optical power increases past the threshold such that the reverse bias increases to variably attenuate the incident optical signal;
decreasing the bias voltage as the optical power decreases toward the threshold; and
applying a forward bias to the PIN structure when the optical power drops below the threshold.
12. A method as defined in claim 9, wherein applying a reverse bias to the PIN structure when the optical power exceeds the threshold such that the optical signal is partially absorbed farther comprises adjusting the reverse bias such that the detector is not saturated by the incident optical signal.

1. A lithography system comprising:
a reflective liquid crystal display comprising an array of configurable pixels wherein the reflective liquid crystal display comprises at least one lower reflective rear electrode and at least one upper reflective rear electrode;
a radiation source for directing radiation onto the reflective liquid crystal display;
a projection system for reducing a radiation pattern reflected by the reflective liquid crystal display and projecting the reduced radiation pattern onto a workpiece; and
a stage for holding the workpiece.
2. The lithography system of claim 1, wherein each configurable pixel is configured to reflect or absorb incident radiation from the radiation source.
3. The lithography system of claim 1, wherein the radiation source is selected from the group consisting of an optical light source, an ultraviolet light source, an excimer laser, an x-ray source, an electron source, and an ion source.
4. The lithography system of claim 1, wherein the reflective liquid crystal display comprises:
at least one front electrode connected to a front substrate;
the at least one lower reflective rear electrode and the at least one upper reflective rear electrode are connected to a rear substrate; and
a liquid crystal layer interposed between the front substrate and the rear substrate.
5. The lithography system of claim 4, wherein the front electrode and the front substrate are generally transparent to the radiation emitted by the radiation source.
6. The lithography system of claim 4, wherein the at least one lower reflective rear electrode and the at least one upper reflective rear electrode are generally transparent to the radiation emitted by the radiation source.
7. The lithography system of claim 4, wherein the rear substrate is generally transparent to the radiation emitted by the radiation source.
8. The lithography system of claim 4, further comprising a reflective layer connected to the rear substrate.
9. The lithography system of claim 4, wherein the at least one lower reflective rear electrode and the at least one upper reflective rear electrode reflects the radiation emitted by the radiation source.
10. The lithography system of claim 4, wherein the at least one lower reflective rear electrode and the at least one upper reflective rear electrode are connected to the rear substrate, each electrode having a reflective surface configured to reflect radiation emitted by the radiation source.
11. The lithography system of claim 4, further comprising a polarizing layer connected to the front substrate.
12. The lithography system of claim 4, further comprising a polarizing layer connected to the rear substrate.
13. The lithography system of claim 4, wherein a plurality of front electrodes are structured in substantially parallel rows.
14. The lithography system of claim 4, wherein the at least one lower reflective rear electrode and the at least one upper reflective rear electrode are arranged on a plurality of planes, thereby forming a three-dimensional array of reflective rear electrodes.
15. The lithography system of claim 4, wherein the at least one lower reflective rear electrode and the at least one upper reflective rear electrode are formed as at least one lower reflective rear electrode and at least one upper reflective rear electrode electrically connected to an integrated gate transistor structure formed on the rear substrate.
16. The lithography system of claim 15, wherein electrode through substrate addressing is used to selectively apply voltage to the at least one rear electrode.
17. The lithography system of claim 1, wherein the reflective liquid crystal display comprises:
at least one front electrode connected to a front substrate;
at least one lower reflective rear electrode and at least one upper reflective rear electrode electrically connected to an integrated gate transistor structure formed on a rear substrate, wherein electrode through substrate addressing is used to selectively apply voltage to each rear electrode; and
a liquid crystal layer interposed between the front substrate and the rear substrate.
18. The lithography system of claim 17, wherein the at least one lower reflective rear electrode and the at least one upper reflective rear electrode are arranged on a plurality of planes, thereby forming a three-dimensional array of reflective rear electrodes.
19. The lithography system of claim 17, wherein the rear substrate is silicon.
20. A method for projecting a radiation pattern onto a substrate, the method comprising:
providing a reflective liquid crystal display comprising an array of configurable pixels, wherein the reflective liquid crystal display comprises at least one lower reflective rear electrode and at least one upper reflective rear electrode;
configuring each pixel to a state in which incident radiation is either reflected or absorbed;
providing a radiation source;
directing radiation from the radiation source onto the reflective liquid crystal display, thereby generating a reflected radiation pattern;
reducing the reflected radiation pattern; and
projecting the reflected radiation pattern.
21. The method of claim 20, wherein the reflected radiation pattern represents a portion of an integrated circuit device and the reflected radiation pattern is projected onto a semiconductor substrate.
22. The method of claim 20, wherein the radiation source is an optical light source, an ultraviolet light source, an excimer laser, an x-ray source, an electron source, or an ion source.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A process for producing a laminated sheet, said process comprising:
(a) extruding a first polymeric material into a heavy-gauge transparent polymer sheet having an average thickness of at least 40 mils and a haze of less than 15 percent; and
(b) in-line laminating a pre-formed polymer film formed from a second polymeric material onto said heavy-gauge transparent polymer sheet to thereby provide a laminated polymer sheet.
2. The process of claim 1, wherein said in-line laminating comprises contacting a film contact surface of said pre-formed polymer film with a sheet contact surface of said heavy-gauge transparent polymer sheet at a lamination location, wherein the temperature of said sheet contact surface at said lamination location is at or above the glass transition temperature of said first polymeric material andor the temperature of said film contact surface at said lamination location is at or above the glass transition temperature of said second polymeric material.
3. The process of claim 2, wherein said first and said second polymeric materials have Hansen Solubility Parameter values within 5 MPa0.5 of each other.
4. The process of claim 3, wherein the temperature of said sheet contact surface at said lamination location is at or above the glass transition temperature of said first polymeric material and the temperature of said film contact surface at said lamination location is at or above the glass transition temperature of said second polymeric material.
5. The process of claim 1, wherein said in-line laminating comprises contacting a film contact surface of said pre-formed polymer film with a sheet contact surface of said heavy-gauge transparent polymer sheet at a lamination location, wherein said sheet contact surface and said film contact surface each have a temperature at said lamination location of at least 275\xb0 F. and not more than 675\xb0 F., wherein said in-line laminating includes applying a compressive laminating force of at least 2 pounds per square inch gauge (psig) at said laminating location, wherein said lamination force is applied for a lamination time period of not more than 30 seconds.
6. The process of claim 5, wherein at least a portion of said compressive lamination force is applied by passing said heavy-gauge transparent polymer sheet and said pre-formed polymer film through a nip defined between two rollers.
7. The process of claim 1, wherein said in-line laminating of step (b) comprises maintaining a tension on said pre-formed polymer film of at least 7 pounds-force (lbf) and not more than 14 lbf.
8. The process of claim 1, further comprising heating a contact surface of said pre-formed polymer film from about ambient temperature to a temperature at or above the glass transition temperature of said second polymeric material.
9. The process of claim 1, further comprising preheating at least a portion of said heavy-gauge transparent polymer sheet andor said pre-formed polymer film prior to said in-line lamination of step (b) wherein at least a portion of said preheating is carried out using an in-line heat source.
10. The process of claim 1, wherein said pre-formed polymer film comprises one or more polymeric film layers and has a total average thickness of not more than 40 mils.
11. The process of claim 1, wherein said pre-formed polymer film is selected from the group consisting of a colored film, a UV resistant film, a weatherable film, an antimicrobial film, an embossed film, an abrasion-resistant film, a hard-coat film, a printed film, a RFEMI shielding film, a low emissivity film, an infrared wavelength absorbing or reflecting film, a fragranced film, a barrier film, a metalized or mirrored film, a self-cleaning or low-surface energy film, a graffiti-resistant film, a conductive film, films used as a crack propagation arrest layer, and combinations thereof.
12. The process of claim 1, wherein said pre-formed polymer film is selected from the group consisting of a colored film, a UV-resistant film, an antimicrobial film, and combinations thereof.
13. The process of claim 1, wherein said first polymeric material is selected from the group consisting of polycarbonates, acrylics, copolyesters, and combinations thereof.
14. The process of claim 1, wherein said first and second polymeric materials are both copolyesters.
15. A process for producing a laminated sheet, said process comprising:
(a) extruding a first polymeric material into a heavy-gauge polymer sheet having an average thickness of at least 40 mils, wherein said first polymeric material is selected from the group consisting of copolyesters, polycarbonates, and acrylics; and
(b) in-line laminating a pre-formed polymer film made from a second polymeric material onto said heavy-gauge polymer sheet to thereby provide a laminated polymer sheet.
16. The process of claim 15, wherein said heavy-gauge polymer sheet has a light transmission of at least 80 percent.
17. The process of claim 15, wherein said in-line laminating of step (b) includes contacting a contact surface of said pre-formed polymer film with a contact surface of said heavy-gauge polymer sheet at a lamination location, wherein the temperature of the sheet contact surface at said lamination location is at or above the glass transition temperature of said first polymeric material andor wherein the temperature of the film contact surface at said lamination location is at or above the glass transition temperature of said second polymeric material.
18. The process of claim 17, wherein each of the sheet contact surface and the film contact surface have a temperature at said lamination location of at least 275\xb0 F. and not more than 675\xb0 F.
19. The process of claim 15, wherein said first andor second polymeric materials are copolyester materials.
20. The process of claim 15, further comprising maintaining a tension of at least 7 lbf and not more than 14 lbf on said pre-formed polymer film during at least a portion of said in-line laminating of step (b).
21. The process of claim 15, wherein said lamination location is a nip defined between a first and a second roller, wherein said heavy-gauge polymer sheet passes over said first andor said second roller subsequent to said extruding of step (a).
22. The process of claim 15, wherein said pre-formed polymer film comprises one or more thermoplastic film layers and has a total average thickness of at least 0.1 mils and not more than 40 mils.
23. The process of claim 15, wherein said pre-formed polymer film is selected from the group consisting of a colored film, a UV resistant film, a weatherable film, an antimicrobial film, an embossed film, an abrasion-resistant film, a hard-coat film, a printed film, a RFEMI shielding film, a low emissivity film, an infrared wavelength absorbing or reflecting film, a fragranced film, a barrier film, a metalized or mirrored film, a self-cleaning or low-surface energy film, a graffiti-resistant film, a conductive film, films used as a crack propagation arrest layer, and combinations thereof.
24. The process of claim 15, wherein said laminated polymer sheet has an average adhesion strength of at least 10 lbfin.
25. A process for producing a laminated polymer sheet, said process comprising:
(a) extruding a first polymeric material into a heavy-gauge transparent sheet having an average thickness of at least 40 mils and a light transmission of at least 80 percent;
(b) passing said heavy-gauge transparent sheet through a nip defined between a first and a second roller; and
(c) co-feeding a pre-formed polymer film formed of a second polymeric material to said nip, wherein the ratio of said average thickness of said heavy-gauge transparent sheet to the average thickness of said pre-formed polymer film is at least 2:1, wherein said co-feeding includes contacting a contact surface of said pre-formed polymer film with a contact surface of said heavy-gauge transparent sheet to thereby form a laminated polymer sheet.
26. The process of claim 25, wherein the temperature of the sheet contact surface at said nip is at or above the glass transition temperature of said first polymeric material, wherein said pre-formed polymer film comprises an adhesive surface andor a film tie layer.
27. The process of claim 25, wherein the temperature of the sheet contact surface at said nip is at or above the glass transition temperature of said first polymeric material.
28. The process of claim 27, wherein said pre-formed polymer film is fed to said nip at about ambient temperature, wherein said pre-formed polymer film is heated to a temperature at or above the glass transition temperature of said second polymeric material via contact with said sheet at said nip.
29. The process of claim 25, wherein the minimum temperatures of the sheet contact surface at said nip is at least 275\xb0 F. and not more than 440\xb0 F.
30. The process of claim 25, wherein said first polymeric material is selected from the group consisting of copolyesters, polycarbonates, and acrylics, wherein said pre-formed polymer film comprises one or more thermoplastic film layers and has a total average thickness of less than 40 mils.
31. The process of claim 25, wherein said first and said second polymeric materials are both copolyesters.
32. The process of claim 25, wherein said co-feeding of step (c) includes maintaining a tension on said pre-formed polymer film of at least 7 lbf and not more than 14 lbf, wherein co-feeding of step (c) includes passing at least a portion of said pre-formed polymer film over a spreader device prior to said contacting at said nip, wherein said spreader device is selected from the group consisting of a convex spreader bar, directed air jets, crowned rollers, angled rollers, rotary clamps, driven or non-driven tractor feed devices and combinations thereof.
33. The process of claim 25, wherein said pre-formed polymer film is selected from the group consisting of a colored film, a UV resistant film, a weatherable film, an antimicrobial film, an embossed film, an abrasion-resistant film, a hard-coat film, a printed film, a RFEMI shielding film, a low emissivity film, an infrared wavelength absorbing or reflecting film, a fragranced film, a barrier film, a metalized or mirrored film, a self-cleaning or low-surface energy film, a graffiti-resistant film, a conductive film, films used as a crack propagation arrest layer, and combinations thereof.