All The Claims

1. An antitheft apparatus installed in a vehicle, comprising:
a gas injection system, which injects one of steam and cold air in a predetermined space in the vehicle;
an intruder detection unit for detecting an intruder into the vehicle; and
a controlling unit for controlling a driving unit of the gas injection system to inject the one of steam and cold air when the intruder detection unit detects that an intruder is present in the vehicle.
2. The antitheft apparatus according to claim 1,
wherein the intruder detection unit detects whether or not a person sits on a seat of the vehicle; and
wherein the controlling unit controls the driving unit of the gas injection system to inject the one of steam and cold air when a first condition is satisfied and the intruder detection unit detects the person sitting on the seat.
3. The antitheft apparatus according to claim 1,
wherein the controlling unit controls the driving unit of the gas injection system to inject the one of steam and cold air into the vehicle when a second condition is satisfied, and
wherein the controlling unit is connected to the driving unit of the gas injection system.
4. The antitheft apparatus according to claim 1, further comprising:
a notification unit for notifying an external unit,
wherein the controlling unit controls the notification unit to notify the external unit when the intruder detection unit detects that an intruder is present in the vehicle, and
wherein the controlling unit is connected to the notification unit.
5. The antitheft apparatus according to claim 1, further comprising:
a foam ejection system, which ejects a material serving as a source of foam polystyrene in the predetermined space in the vehicle,
wherein when the intruder detection unit detects that an intruder is present in the vehicle, the controlling unit controls a foam driving unit of the foam ejection system to eject the material and then controls the driving unit of the gas injection system to inject steam as the one of steam and cold air.
6. An antitheft apparatus installed in a vehicle, comprising:
a gas injection system, which injects one of steam and cold air in a predetermined space in a vehicle;
a pre-intrusion detection unit for detecting a person who is going to intrude into the vehicle; and
a controlling unit for controlling a driving unit of the gas injection system to inject the one of steam and cold air when a first predetermined time has lapsed after the pre-intrusion detection unit detects the person.
7. The antitheft apparatus according to claim 6, further comprising:
a foam ejection system which ejects a material serving as a source of foam polystyrene in the predetermined space in the vehicle,
wherein the controlling unit controls a foam driving unit of the foam ejection system to eject the material when a second predetermined time has elapsed after the pre-intrusion detection unit detects the person, and
wherein the first predetermined time is longer than the second predetermined time.
8. An antitheft apparatus installed in a vehicle, comprising:
a foam ejection system, including a driving unit that ejects a material serving as a source of foam polystyrene into the vehicle and injects steam into the ejected material in a predetermined space in the vehicle;
an intruder detection unit for detecting an intruder into the vehicle; and
a foam controlling unit for controlling the driving unit of the foam ejection system to eject the material and inject steam therein when the intruder detection unit detects that an intruder is present in the vehicle.
9. An antitheft apparatus installed in a vehicle, comprising:
a seat-state changing system including a driving unit for changing a state of a seat disposed in the vehicle;
an intruder detection unit for detecting an intruder into the vehicle;
a controlling unit for controlling the driving unit of the seat-state changing system to change the seat to a first state to confine a motion of the intruder when the intruder detection unit detects that an intruder is present in the vehicle; and
a gas injection system, which injects one of steam and cold air in a predetermined space in the vehicle,
wherein the controlling unit controls a gas injection driving unit of the gas injection system to inject the one of steam and cold air when the intruder detection unit detects that the intruder is present in the vehicle,
wherein the controlling unit is connected to the driving unit of the gas injection system.
10. The antitheft apparatus according to claim 9, wherein the predetermined space is located around the seat.
11. An antitheft apparatus installed in a vehicle, comprising:
a seat-state changing system including a seat driving unit for changing a state of a seat disposed in the vehicle;
an intruder detection unit for detecting an intruder into the vehicle;
a foam ejection system, which ejects a material serving as a source of foam polystyrene into the vehicle and injects steam into the ejected material; and
a controlling unit to control the seat driving unit of the seat-state changing system to change the seat to a first state to confine a motion of the intruder when the intruder detection unit detects that an intruder is present in the vehicle and to control a foam driving unit of the foam ejection system to eject the material and inject steam therein when the intruder detection unit detects that the intruder is present in the vehicle.
12. An antitheft apparatus installed in a vehicle, comprising:
a seat-state changing system including a driving unit for changing a state of a seat disposed in the vehicle;
an intruder detection unit for detecting an intruder into the vehicle;
a controlling unit for controlling the driving unit of the seat-state changing system to change the seat to a first state to confine a motion of the intruder when the intruder detection unit detects that an intruder is present in the vehicle; and
a gas injection system including a gas injection driving unit for injecting gas into the vehicle,
wherein the gas is one of steam and cold air, and wherein when the intruder detection unit detects the intruder in the vehicle, the controlling unit controls the driving unit of the seat-state changing system to change the seat to the first state to confine a motion of the intruder and then controls the gas injection driving unit of the gas injection system to inject the gas into the vehicle.
13. The antitheft apparatus according to claim 12, further comprising:
a notification unit for notifying an external unit,
wherein the controlling unit controls the notification unit to notify the external unit when the intruder detection unit detects that the intruder is present in the vehicle, and
wherein the controlling unit is connected to the notification unit.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for forming a thick film pattern, comprising the steps of:
applying to a support a photosensitive paste including a conductive powder, a photosensitive monomer, a photopolymerization initiator, and a polymer, wherein a ratio of the photosensitive monomer to a total amount of the photosensitive monomer and the polymer satisfies the condition represented by the following Formula:
photosensitive monomer(photosensitive monomer+polymer)\u22670.90,
so as to form a photosensitive paste film;
subjecting the photosensitive paste film to an exposure treatment; and
developing the photosensitive paste film subjected to the exposure treatment so as to form a thick film pattern; wherein
the contents of the conductive powder, the photosensitive monomer, and the photopolymerization initiator are within the following ranges:
conductive powder: about 60 to about 90 percent by weight of the photosensitive paste;
photosensitive monomer: about 5 to about 39 percent by weight of the photosensitive paste;
photopolymerization initiator: about 1 to about 10 percent by weight of the photosensitive paste; and
the photosensetive paste includes a photosensitive monomer having a double bond concentration within the range of about 8 mmolg to about 11 mmolg.
2. The method for forming a thick film pattern according to claim 1, wherein the photosensitive paste includes a photosensitive monomer having an ethylene oxide structure with a degree of polymerization of about 3 or less.
3. The method for forming a thick film pattern according to claim 1, wherein the photosensitive paste comprises an ultraviolet absorber.
4. The method for forming a thick film pattern according to claim 1, wherein the photosensitive paste comprises a solvent in a proportion of about 5 percent by weight or less.
5. The method for forming a thick film pattern according to claim 1, wherein the developing is conducted by using an organic solvent in the developing step.
6. The method for forming a thick film pattern according to claim 1, wherein the exposure treatment is conducted while the photosensitive paste film and a photomask are arranged to be kept from contacting with each other in the exposure step.
7. The method for forming a thick film pattern according to claim 1, wherein the photosensitive paste is subjected to the exposure treatment without using a photomask in the exposure step.
8. A method for manufacturing an electronic component, comprising the steps of:
a thick film pattern by the method according to claim 1; and
firing the resulting thick film pattern.

1. A semiconductor structure comprising:
a surface layer comprising strained silicon disposed over a substrate, the surface layer including a first region having a non-zero first thickness and a second region having a second thickness, the first region having a bottom boundary co-planar with a bottom boundary of the second region and the first thickness being less than the second thickness;
a first source and a first drain in the first region, the first source and the first drain including a first type of dopant; and
a second source and a second drain in the second region, the second source and the second drain including a second type of dopant,
wherein the substrate comprises a region under compressive strain sharing an interface with the surface layer, the strained surface layer enhancing mobility of electrons and the compressively strained substrate region enhancing mobility of holes.
2. The structure of claim 1 further comprising:
an underlying relaxed layer.
3. The structure of claim 2, wherein the underlying relaxed layer comprises germanium.
4. The structure of claim 2, wherein the underlying relaxed layer comprises silicon.
5. The structure of claim 1 further comprising:
an insulator layer,
wherein the surface layer is disposed over the insulator layer.
6. The structure of claim 1, wherein the surface layer comprises tensilely strained silicon.
7. The structure of claim 1, wherein the first type of dopant is p-type and the second type of dopant is n-type.
8. The structure of claim 1, wherein the first type of dopant is n-type and the second type of dopant is p-type.
9. The structure of claim 1 further comprising:
a gate disposed above the surface layer, the first thickness being sufficiently small such that application of an operating voltage to the gate modulates movement of a plurality of charge carriers within the compressively strained substrate region and a majority of the carriers populate the compressively strained substrate region.
10. The structure of claim 9 further comprising:
an insulator between the gate and the surface layer.
11. The structure of claim 1, wherein the compressively strained substrate region comprises silicon.
12. The structure of claim 1, wherein the compressively strained substrate region comprises germanium.
13. The structure of claim 1, wherein the first thickness is greater than 7 \u212b.
14. The structure of claim 1, further comprising:
a gate dielectric disposed over a portion of at least the first region of the surface layer.
15. The structure of claim 14, wherein the gate dielectric layer comprises silicon dioxide.
16. The structure of claim 14, wherein the gate dielectric layer is disposed over a portion of the second region of the surface layer.
17. The structure of claim 14, wherein the gate dielectric layer has a thickness of approximately 10\u2013100 \u212b.
18. The structure of claim 17, wherein the first thickness is approximately 7\u201320 \u212b.
19. The structure of claim 18, wherein the first thickness is less than 10 \u212b.
20. The structure of claim 17, wherein the gate dielectric layer has a thickness of approximately 15 \u212b.
21. The structure of claim 20, wherein the first thickness is less than 10\u212b.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A hydrogen supply system for a fuel cell with an integrated manifold block comprising:
a hydrogen supply line, a hydrogen discharge line, and a hydrogen recirculation line formed in a manifold block mounted on the outside of a plurality of stack modules of a fuel cell stack, wherein the components of the hydrogen supply system including components for supplying and discharging hydrogen and components for recirculating hydrogen are integrally mounted in predetermined positions of the hydrogen supply line, the hydrogen discharge line, and the hydrogen recirculation line to modularize the manifold block and the components of the hydrogen supply system.
2. The hydrogen supply system of claim 1, further comprising a hydrogen supply valve mounted at an inlet of the hydrogen supply line formed on an upper surface of the manifold block.
3. The hydrogen supply system of claim 1, further comprising a recirculation blower mounted on the hydrogen recirculation line which is exposed through an upper surface of the manifold block.
4. The hydrogen supply system of claim 1, further comprising an ejector mounted between the hydrogen supply line and the hydrogen recirculation line in the manifold block.
5. The hydrogen supply system of claim 1, wherein the hydrogen recirculation line is connected to the ejector directly.
6. The hydrogen supply system of claim 1, further comprising a pressure relief valve, which is mounted at inlet of the hydrogen supply line formed on an upper surface of the manifold block.
7. The hydrogen supply system of claim 1, further comprising a water trap and a purge valve, which are connected to the hydrogen discharge line and each mounted on a lower surface and a second side of the manifold block.
8. The hydrogen supply system of claim 1, further comprising a controller located near the manifold block to control the operation of the recirculation blower and the water trap and the opening and closing of the valves.